973 resultados para Two-step method


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We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. To identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. Our experiment reveals that some composition redistribution or other related ordering process may occur in the quantum-well layer during annealing. Annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells.

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Conventional transmission electron microscopy and energy-filtering were used to study the dislocations and nanocavities in proton-implanted [001] silicon. A two-dimensional network of dislocations and nanocavities was found after a two-step annealing, while only isolated cavities were present in single-step annealed Si. In addition, two-step annealing increased materially the size and density of the nanocavities. The Burgers vector of the dislocations was mainly the 1/2[110] type. The gettering of oxygen at the nanocavities was demonstrated. (C) 1998 American Institute of Physics. [S0003-6951(98)00620-2].

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This paper describes the binary exponential backoff mechanism of 802.11 distributed coordination function (DCF), and introduces some methods of modifying the backoff scheme. Then a novel backoff scheme, called Two-step Backoff scheme, is presented and illustrated. The simulation process in OPNET environment has been described also. At last, the analysis and simulation results show that the Two-step backoff scheme can enhance the performance of the IEEE 802.11 DCF.

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In this paper we introduce a new Half-flash analog switch ADC architecture. And we discuss two methods to design the values of the cascaded resistors which generate the reference voltages. Derailed analysis about the effect of analog switches and comparators on reference voltages, and the methods to set the resistor values and correspond;ng voltage errors are given.

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A new iron(III) coordination compound exhibiting a two-step spin-transition behavior with a remarkably wide [HS-LS] plateau of about 45 K has been synthesized from a hydrazino Schiff-base ligand with an N,N,O donor set, namely 2-methoxy-6-(pyridine-2-ylhydrazonomethyl) phenol (Hmph). The single-crystal X-ray structure of the coordination compound {[Fe(mph)(2)](ClO4)(MeOH)(0.5)(H2O)(0.5)}(2) (1) determined at 150 K reveals the presence of two slightly different iron(III) centers in pseudo-octahedral environments generated by two deprotonated tridentate mph ligands. The presence of hydrogen bonding interactions, instigated by the well-designed ligand, may justify the occurrence of the abrupt transitions. 1 has been characterized by temperature-dependent magnetic susceptibility measurements, EPR spectroscopy, differential scanning calorimetry, and Fe-51 Mossbauer spectroscopy, which all confirm the occurrence of a two-step transition. In addition, the iron(III) species in the high-spin state has been trapped and characterized by rapid cooling EPR studies.

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Ambipolar organic field-effect transistors (OFETs) are produced, based on organic heterojunctions fabricated by a two-step vacuum-deposition process. Copper phthalocyanine (CuPc) deposited at a high temperature (250 degrees C) acts as the first (p-type component) layer, and hexadecafluorophthalocyaninatocopper (F16CuPc) deposited at room temperature (25 degrees C) acts as the second (n-type component) layer. A heterojunction with an interpenetrating network is obtained as the active layer for the OFETs. These heterojunction devices display significant ambipolar charge transport with symmetric electron and hole mobilities of the order of 10(-4) cm(2) V-1 s(-1) in air. Conductive channels are at the interface between the F16CuPc and CuPc domains in the interpenetrating networks. Electrons are transported in the F16CuPc regions, and holes in the CuPc regions. The molecular arrangement in the heterojunction is well ordered, resulting in a balance of the two carrier densities responsible for the ambipolar electrical characteristics. The thin-film morphology of the organic heterojunction with its interpenetrating network structure can be controlled well by the vacuum-deposition process.

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In-situ synthesis of terbium complex with salicylic acid (Sal) in silica matrix was made by a two-step sol-gel process. The terbium complex with salicylic acid was formed in sol-gel derived silica gel, and confirmed by the luminescence excitation spectra and infrared(IR) spectra. As compared to the pure terbium complex powder, the silica gel containing terbium complex exhibits its characteristic emission and presents a longer fluorescence lifetime than that for the pure complex. The luminescence properties of the complex containing;silica gel were investigated and compared with that of both terbium doped the silica gel and thp pure complex powder. The reasons leading to the above results were also discussed.

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In-situ synthesis of europium and terbium complexes with 1,10-phenanthroline (phen) in silica matrix by a two-step sol-gel process has been proposed. The formation of europium and terbium complexes with phen in sol-gel derived silica gel were confirmed by the luminescence excitation spectra. The silica gels that contain in-situ synthesized europium and terbium complex exhibit the characteristic emission bands of the rare earth ions. Furthermore. the rare earth ions present longer fluorescence lifetimes than the comparable pure complex powder and the complexes dissolved in ethanol solutions. The luminescence properties of the silica gels codoped with europium (or terbium) and phen were also investigated with respect to the gels doped with europium (or terbium). (C) 1999 Elsevier Science B.V. All rights reserved.

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Accurate knowledge of traffic demands in a communication network enables or enhances a variety of traffic engineering and network management tasks of paramount importance for operational networks. Directly measuring a complete set of these demands is prohibitively expensive because of the huge amounts of data that must be collected and the performance impact that such measurements would impose on the regular behavior of the network. As a consequence, we must rely on statistical techniques to produce estimates of actual traffic demands from partial information. The performance of such techniques is however limited due to their reliance on limited information and the high amount of computations they incur, which limits their convergence behavior. In this paper we study a two-step approach for inferring network traffic demands. First we elaborate and evaluate a modeling approach for generating good starting points to be fed to iterative statistical inference techniques. We call these starting points informed priors since they are obtained using actual network information such as packet traces and SNMP link counts. Second we provide a very fast variant of the EM algorithm which extends its computation range, increasing its accuracy and decreasing its dependence on the quality of the starting point. Finally, we evaluate and compare alternative mechanisms for generating starting points and the convergence characteristics of our EM algorithm against a recently proposed Weighted Least Squares approach.