用于掺钛蓝宝石激光系统的高反膜的激光损伤

用电子束蒸发制备了用于掺钛蓝宝石啁啾脉冲放大激光系统的TiO2/HfO2/SiO2高反膜，其带宽约为176nm（R>98%, λ0=800nm），激光损伤阈值（LIDT）为2.4 J/cm2。通过TiO2和HfO2单层膜的透过光谱计算了这两种材料的折射率和消光系数。高反膜的性能主要由高折射率材料决定：折射率越高，反射带越宽；消光系数越小，薄膜吸收越小，LIDT越高。最后，讨论了高反膜的激光损伤机制。

单脉冲飞秒脉冲激光对单层和高反光学薄膜的损伤

用电子柬蒸发的方法在BK7玻璃上制备了ZrO2单层膜和ZrO2／SiO2高反膜，利用掺Ti：sapphire飞秒激光系统输出的中心波长为800nm，脉宽为50fs的激光脉冲对这两种样品进行了激光损伤阈值测试．实验结果表明，ZrO2单层膜的阂值比ZrO2／SiO2高反膜的高；这与传统的纳秒脉冲激光的损伤情况相反．利用光离化和碰撞离化激发电子到导带，形成电子等离子体基本模型并对此现象进行了解释．同时，用显微镜对样品的损伤形貌进行了观测，对损伤的特点进行了表征．

Design of high-efficiency diffraction gratings based on rigorous coupled-wave analysis for 800nm wavelength

We report on the design of a high diffraction efficiency multi-layer dielectric grating with wide incident angle and broad bandwidth for 800 nm. The optimized grating can achieve > 95% diffraction efficiency in the first order at an incident angle of 5 degrees from Littrow and a wavelength from 770nm to 830 nm, with peak diffraction efficiency of > 99.5% at 800 nm. The electric field distribution of the optimized multi-layer dielectric grating within the gratings ridge is 1.3 times enhancement of the incidence light, which presents potential high laser resistance ability. Because of its high-efficiency, wide incident, broad bandwidth and potential high resistance ability, the multi-layer dielectric grating should have practical application in Ti:sapphire laser systems.

Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements

A two-color time-resolved Kerr rotation spectroscopy system was built, with a femtosecond Ti:sapphire laser and a photonic crystal fiber, to study coherent spin transfer processes in an InGaAs/GaAs quantum well sample. The femtosecond Ti:sapphire laser plays two roles: besides providing a pump beam with a tunable wavelength, it also excites the photonic crystal fiber to generate supercontinuum light ranging from 500 nm to 1600 nm, from which a probe beam with a desirable wavelength is selected with a suitable interference filter. With such a system, we studied spin transfer processes between two semiconductors of different gaps in an InGaAs/GaAs quantum well sample. We found that electron spins generated in the GaAs barrier were transferred coherently into the InGaAs quantum well. A model based on rate equations and Bloch-Torrey equations is used to describe the coherent spin transfer processes quantitatively. With this model, we obtain an effective electron spin accumulation time of 21 ps in the InGaAs quantum well.

A Bragg-mirror-based semiconductor saturable absorption mirror at 800 nm with low temperature and surface state hybrid absorber

We present a novel 800-nm Bragg-mirror-based semiconductor saturable absorption mirror with low temperature and surface state hybrid absorber, with which we can realize the passive soliton mode locking of a Ti:sapphire laser pumped by 532-nm green laser which produces pulses as short as 37 fs. The reflection bandwidth of the mirror is 30 nm and the pulse frequency is 107 MHz. The average output power is 1.1 W at the pump power of 7.6 W.

Experimental and theoretical analysis of nondegenerate ultrabroadband chirped pulse optical parametric amplification

Experimental investigations of nondegenerate ultrabroadband chirped pulse optical parametric amplification have been carried out. The general mathematical expressions for evaluating parametric bandwidth, gain and gain bandwidth for arbitrary three-wave mixing parametric amplifiers are presented. In our experiments, a type-I noncollinear phase-matched optical parametric amplifier based on lithium triborate, which was pumped by a 5-ns second harmonic pulses from a Q-switched Nd:YAG operating at 10 Hz, seeded by a 14-fs Ti:sapphire laser at 800 nm, was presented. The 0.85 nJ energy of input chirped signal pulse with 57-FWHM has been amplified to 3.1 muJ at pump intensity 3 GW/cm(2), the corresponding parametric gain reached 3.6 x 10(3), the 53 nm-FWHM gain spectrum bandwidth of output signal has been obtained. The large gain and broad gain bandwidth, which have been confirmed experimentally, provide great potentials to amplify efficiently the broad bandwidth femtosecond light pulses to generate new extremes in power, intensity, and pulse duration using optical parametric chirped pulse amplifiers pumped by powerful nanosecond systems.

Generation of the high efficiency high peak-power femtosecond blue optical pulse

The analysis and calculation of the compensation for the phase mismatch of the frequency-doubling using the frequency space chirp introduced from prisms are made. The result shows that suitable lens can compensate the phase mismatch in a certain extent resulting from wide femtosecond spectrum when the spectrum is space chirped. By means of this method, the experiment of second harmonic generation is carried out using a home-made femtosecond KLM Ti:sapphire laser and BBO crystal. The conversion efficiency of SHG is 63 %. The average output power of blue light is 320 mW. The central wavelength is 420 nm. The spectrum bandwidth is 5.5 nm. It can sustain the pulse width of 33.6 fs. The tuning range of blue light is 404-420 nm,when the femtosecond Ti:sapphire optical pulse is tuned using the prisms in the cavity.

Tunable parametric fluorescence using a single crystal

In this paper, we investigate the mechanism of tunable parametric superfluorescence (PS) based on the second harmonic generation and parametric processes taking place in the same nonlinear crystal (BBO). The tunable spectra of PS has been generated between 480 nm and 530 nm, which is pumped by the second-harmonic from the high-power Ti: sapphire laser system at 1 kHz repetition rate. We present the generation mechanism of PS theoretically and simulate the process of PS ring using the amplification transfer function. The experiment and the theory show that PS will appear when the phase matching angle for second-harmonic generation is close to the optimal pump angle for optical parametric generation, and then the tunable spectra of PS are generated by slightly adjusting the crystal angle. The result provides a theoretical basis for controlling the generation of PS and quantum entanglement states, which is of great significance for the development of quantum imaging, quantum communications and other applieations.

Supercontinuum generation in air-silica microstructured fibers with nanosecond and femtosecond pulse pumping

We study the generation of supercontinua in air-silica microstructured fibers by both nanosecond and femtosecond pulse excitation. In the nanosecond experiments, a 300-nm broadband visible continuum was generated in a 1.8-m length of fiber pumped at 532 nm by 0.8-ns pulses from a frequency-doubled passively Q-switched Nd:YAG microchip laser. At this wavelength, the dominant mode excited under the conditions of continuum generation is the LP 11 mode, and, with nanosecond pumping, self-phase modulation is negligible and the continuum generation is dominated by the interplay of Raman and parametric effects. The spectral extent of the continuum is well explained by calculations of the parametric gain curves for four-wave mixing about the zero-dispersion wavelength of the LP11 mode. In the femtosecond experiments, an 800-nm broad-band visible and near-infrared continuum has been generated in a 1-m length of fiber pumped at 780 nm by 100-fs pulses from a Kerr-lens model-locked Ti:sapphire laser. At this wavelength, excitation and continuum generation occur in the LP01 mode, and the spectral width of the observed continuum is shown to be consistent with the phase-matching bandwidth for parametric processes calculated for this fiber mode. In addition, numerical simulations based on an extended nonlinear Schrödinger equation were used to model supercontinuum generation in the femtosecond regime, with the simulation results reproducing the major features of the experimentally observed spectrum. © 2002 Optical Society of America.

Side illumination fluorescence emission characteristics from a dye doped polymer optical fiber under two-photon excitation.

Two-photon excited (TPE) side illumination fluorescence studies in a Rh6G-RhB dye mixture doped polymer optical fiber (POF) and the effect of energy transfer on the attenuation coefficient is reported. The dye doped POF is pumped sideways using 800 nm, 70 fs laser pulses from a Ti:sapphire laser, and the TPE fluorescence emission is collected from the end of the fiber for different propagation distances. The fluorescence intensity of RhB doped POF is enhanced in the presence of Rh6G as a result of energy transfer from Rh6G to RhB. Because of the reabsorption and reemission process in dye molecules, an effective energy transfer is observed from the shorter wavelength part of the fluorescence spectrum to the longer wavelength part as the propagation distance is increased in dye doped POF. An energy transfer coefficient is found to be higher at shorter propagation distances compared to longer distances. A TPE fluorescence signal is used to characterize the optical attenuation coefficient in dye doped POF. The attenuation coefficient decreases at longer propagation distances due to the reabsorption and reemission process taking place within the dye doped fiber as the propagation distance is increased.

Nonlinear refractive index of RECOB (RE = Gd and La) crystals

The Z-scan technique is employed to obtain the nonlinear refractive index (n (2)) of the Ca(4)REO(BO(3))(3) (RECOB, where RE = Gd and La) single crystals using 30 fs laser pulses centered at 780 nm for the two orthogonal orientations determined by the optical axes (X and Z) relative to the direction of propagation of the laser beam (k//Y// crystallographic b-axis). The large values of n (2) indicate that both GdCOB and LaCOB are potential hosts for Yb:RECOB lasers operating in the Kerr-lens mode locking (KLM) regime.

Entwicklung des Laserionenquellen und -fallenprojekts LIST für Ultraspurendetektion und Grundlagenforschung

Die vorliegende Dissertation beschreibt die Realisation des neuartigen Konzepts der Laserionenquellenfalle für die on-line Produktion exotischer Nuklide und für den Nachweis von Spurenisotopen in Proben mit starken Isobarenkontaminationen. Ziel dieser Entwicklung ist eine wesentliche Steigerung der Isobarenselektivität einer herkömmlichen Laserionenquelle, sowie die Erzeugung zeitlich kontrollierter Ionenpulse mit hervorragender Strahlqualität. Es konnte die prizipielle Funktionsfähigkeit des Systems in Kombination mit einem Titan:Saphir-Lasersystem für die Elemente Gallium, Calcium und Nickel demonstriert und Ionenpulse mit einer minimalen Pulslänge von 1 µs erzeugt werden. Nach ersten Abschätzungen ist die Effizienz des Systems etwa einen Faktor 2500 geringer als die einer herkömmlichen Laserionenquelle. Der zweite Teil der Arbeit beschäftigt sich mit dem spurenanalytischen Nachweis von 99-Tc, mit dem Ziel, das Verhalten von 99-Tc in der Umgebung eines möglichen Endlagers für nukleare Abfälle studieren zu können. Hier wurden erste Studien mit dem kurzlebigen Isomer 99m-Tc zur Wechselwirkung von Tc(VII) mit Huminsäure und Kaolinit durchgeführt. Für den Einsatz der Laserionenquellenfalle in der Ultraspurenanalyse, wurde ein effizientes Anregungsschema für Titan:Saphir-Laser entwickelt und 99-Tc in einer herkömmlichen Ionenquelle nachgewiesen. Der letzte Teil der Arbeit beschreibt Machbarkeitsstudien zum Aufbau einer Laserionenquelle auf Basis eines Titan:Sahphir-Lasersystems, die parallel zu oben genannten Entwicklungen am Oak Ridge National Laboratory durchgeführt wurden. Im Rahmen dieser Messungen wurden Anregungsschemata für die resonante Anregung und Ionisation von Kupfer und Palladium für Titan:Saphir-Laser getestet. Dabei konnte zum ersten Mal frequenzvervierfachtes Laserlicht in einer Laserionenquelle eingesetzt werden. Am ORNL wurden Studien zur Zeitstruktur von Laserionenpulsen, sowie Emittanzmessungen von Laser- und Oberflächenionenstrahlen durchgeführt werden.

Point-by-point inscription of 250 nm period structure in bulk fused silica by tightly focused femtosecond UV pulses

By conducting point-by-point inscription in a continuously moving slab of pure fused silica at the optimal depth (170νm depth below the surface), we have fabricated a 250nm period nanostructure with 30nJ, 300fs, 1kHz pulses from a frequency-tripled Ti:sapphire laser. This is the smallest value for the inscribed period yet reported, and has been achieved with radical improvement in the quality of the inscribed nanostructures in comparison with previous reports.

Point-by-point inscription of 250-nm-period structure in bulk fused silica by tightly-focused femtosecond UV pulses: experiment and numerical modeling

By conducting point-by-point inscription in a continuously moving slab of a pure fused silica at the optimal depth (170 μm depth below the surface), we have fabricated a 250-nm-period nanostructure with 30 nJ, 300 fs, 1 kHz pulses from frequency-tripled Ti:sapphire laser. This is the smallest value for the inscribed period yet reported, and has been achieved with radical improvement in the quality of the inscribed nanostructures in comparison with previous reports. The performed numerical modeling confirms the obtained experimental results.

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Dense arrays of high aspect ratio Si micro-pyramids have been formed by cumulative high intensity laser irradiation of doped Si wafers in an SF6 environment. A comparative study using nanosecond (XeCl, 308 nm) and femtosecond (Ti: Sapphire, 800 nm and KrF, 248 nm) laser pulses has been performed in this work. The influence of pulse duration and ambient gas pressure (SF6) is also presented. Scanning electron microscopy has shown that upon laser irradiation conical features appear on the Si surface in a rather homogenous distribution and with a spontaneous self alignment into arrays. Their lowest tip diameter is 800 nm; while their height reaches up to 90 mum. Secondary tip decoration appears on the surface of the formed spikes. Areas of 2 X 2 mm(2) covered with Si cones have been tested as cold cathode field emitters. After several conditioning cycles, the field emission threshold for the studied Si tips is as low as 2 V/mum, with an emission current of 10(-3) A/cm(2) at 4 V/mum. Even though these structures have smaller aspect ratios than good quality carbon nanotubes, their field emission properties are similar. The simple and direct formation of field emission Si arrays over small pre-selected areas by laser irradiation could lead to a novel approach for the development of electron sources. (C) 2003 Elsevier B.V. All rights reserved.