Hydrogenated amorphous silicon and silicon nitride deposited at less than 100° C by ECR-PECVD for thin film transistors

A systematic study has been made of the growth of both hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiN) by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). In the case of a-SiN, helium and nitrogen gas is injected into the system such that it passes through the resonance zone. These highly ionised gases provide sufficient energy to ionise the silane gas, which is injected further downstream. It is demonstrated that a gas phase reaction occurs between the silane and nitrogen species. It is control of the ratio of silane to nitrogen in the plasma which is critical for the production of stoichiometric a-SiN. Material has been produced at 80°C with a Si:N ratio of 1:1.3 a breakdown strength of ∼6 MV cm-1 and resistivity of > 1014 Ω cm. In the case of a-Si:H, helium and hydrogen gas is injected into the ECR zone and silane is injected downstream. It is shown that control of the gas phase reactions is critical in this process also. a-Si:H has been deposited at 80 °C with a dark conductivity of 10-11 Ω-1 cm-1 and a photosensitivity of justbelowl 4×104. Such materials are suitable for use in thin film transistors on plastic substrates.

Thin film shape memory alloys and microactuators

For Micro-electro-mechanical System (MEMS) applications, TiNi-based thin film Shape Memory Alloys (SMAs) possess many desirable properties, such as high power density, large transformation stress and strain upon heating and cooling, superelasticity and biocompatibility. In this paper, recent development in TiNi-based thin film SMA and microactuator applications is discussed. The topics related to film deposition and characterisation is mainly focused on crystal nucleation and growth during annealing, film thickness effect, film texture, stress induced surface relief, wrinkling and trenches as well as Temperature Memory Effect (TME). The microactuator applications are mainly focused on microvalve and microcage for biological applications, micromirror for optical applications and data storage using nanoindentation method. Copyright © 2009, Inderscience Publishers.

Violet/blue photoluminescence from CeO2 thin film

CeO2 thin film was fabricated by dual ion beam epitaxial technique. The violet/blue PL at room temperature and lower temperature was observed from the CeO2 thin film. After the analysis of crystal structure and valence in the compound was carried out by the XRD and XPS technique, it was inferred that the origin of CeO2 PL was due to the electrons transition from Ce4f band to O2p band and the defect level to O2p band. And these defects levels were located in the range of 1 eV around Ce4f band.

Photoluminescence and electroluminescence of (Gd2O3-Ga2O3): Ce thin film

A novel electroluminescence oxide phosphor (Gd2O3-Ga2O3):Ce has been prepared by electron beam evaporation. The emission peaks of photoluminescence lie at 390nm and a shoulder at 440nm. However, the electroluminescence of the (Gd2O3-Ga2O3):Ce thin film have four emission peaks at 358nm, 390nm, 439nm and 510nm, respectively. The optical absorption of (Gd2O3-Ga2O3):Ce thin film and the photoluminescence of composite materials with various ratios of Ga2O3/(Gd2O3+Ga2O3) have also been described to investigate the origin of emission of photoluminescence and electroluminescence.

Enhanced photocatalytic activity of TiO2 nano-structured thin film with a silver hierarchical configuration

TiO2 sol-gels with various Ag/TiO2 molar ratios from 0 to 0.9% were used to fabricate silver-modified nano-structured TiO2 thin films using a layer-by-layer dip-coating (LLDC) technique. This technique allows obtaining TiO2 nano-structured thin films with a silver hierarchical configuration. The coating of pure TiO2 sol-gel and Ag-modified sol-gel was marked as T and A, respectively. According to the coating order and the nature of the TiO2 sol-gel, four types of the TiO2 thin films were constructed, and marked as AT (bottom layer was Ag modified, surface layer was pure TiO,), TA (bottom layer was pure TiO,, surface layer was Ag modified), TT (pure TiO, thin film) and AA (TiO, thin film was uniformly Ag modified). These thin films were characterized by means of linear sweep voltammetry (LSV), X-ray diffraction (XRD), scanning electron microscopy (SEM), electrochemical impedance spectroscopy and transient photocurrent (I-ph). LSV confirmed the existence of Ago state in the TiO, thin film. SEM and XRD experiments indicated that the sizes of the TiO,, nanoparticles of the resulting films were in the order of TT > AT > TA > AA, suggesting the gradient Ag distribution in the films. The SEM and XRD results also confirmed that Ag had an inhibition effect on the size growth of anatase nanoparticles. Photocatalytic activities of the resulting thin films were also evaluated in the photocatalytic degradation process of methyl orange. The preliminary results demonstrated the sequence of the photocatalytic activity of the resulting films was AT > TA > AA > TT. This suggested that the silver hierarchical configuration can be used to improve the photocatalytic activity of TiO2 thin film.

The dewetting dynamics of the polymer thin film by solvent annealing

The slippage effect of the polymer chains is investigated in the dewetting process of the polymer solution film. The solvent-induced dewetting is used in our experiments to study the dynamics of hole growth in the dewetting process of the polymer solution film. Our results show that in the case of the low molecular weight polystyrene (PS) film, the slippage effect of the polymer chains is not displayed and the radius of the holes is R similar to exp(t/tau); in the case of the higher molecular weight PS film, the slippage effect of the polymer chain is not valid in the case of the thin film and that is valid in the case of the thick film, and the dynamic process of hole growth divides into three stages (R similar to t, and then R similar to t(x) (2/3 < x < 1), finally, R similar to t). Besides, the solvent and substrate properties also influence the dewetting dynamics of the polymer solution film.

Weak epitaxy growth of organic semiconductor thin films

The fabrication of organic semiconductor thin films is extremely important in organic electronic devices. This tutorial review-which should particularly appeal to chemists and physicists interested in organic thin-film growth, organic electronic devices and organic semiconductor materials-summarizes the method of weak epitaxy growth (WEG) and its application in the fabrication of high quality organic semiconductor thin films.

Autophobic Dewetting of a Poly(methyl methacrylate) Thin Film on a Silicon Wafer Treated in Good Solvent Vapor

The wettability of thin poly(methyl methacrylate) (PMMA) films on a silicon wafer with a native oxide layer exposed to solvent vapors is dependent on the solvent properties. In the nonsolvent vapor, the film spread on the substrate with some protrusions generated on the film surface. In the good solvent vapor, dewetting happened. A new interface formed between the anchored PMMA chains and the swollen upper part of the film. Entropy effects caused the upper movable chains to dewet on the anchored chains. The rim instability depended on the surface tension of solvent (i.e., the finger was generated in acetone vapor (gamma(acetone) = 24 mN/m), not in dioxane vapor (gamma(dioxane) = 33 mN/m)). The spacing (lambda) that grew as an exponential function of film thickness h scaled as similar to h(1.31) whereas the mean size (D) of the resulting droplets grew linearly with h.

Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate

An interesting interface structure between diamond film and silicon substrate has been observed. That is, according to the deformation of the diamond film crystal sturcture, a strictly 3:2 matching of the two lattices across the interface is obtained. This result clearly indicates that misfit dislocations at the interface and "epitaxial tilting" are not the only two ways to overcome the 1.5% residual misfit.

Electrochemical quartz crystal microbalance study for vanadium hexacyanoferrates: monitoring of film growth and ion effects during redox reactions

An electrochemical quartz crystal microbalance was employed to monitor directly the growth of vanadium hexacyanoferrate (VHF) films on platinum substrates during electrodeposition and interfacial coagulation in the solution containing sulfuric acid electrolyte, vanadium(IV) and hexacyanoferrate(III). Mass changes of the gold/crystal working electrode were correlated with cyclic voltammetry data. Effects of cations (NH4+, Li+, Na+ and K+), anions (SO42- and NO3-) and solvent during redox reactions of the films were studied. The results show that cations were incorporated into the film during reduction and expelled from the film during oxidation. Solvent also participates in VHF electrochemistry, and its role cannot be neglected. Anions play no role in VHF electrochemistry. (C) 1997 Elsevier Science S.A.

Investigation of dead-layer thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au thin-film capacitors

Thin-film capacitors, with barium strontium titanate (BST) dielectric layers between 7.5 and 950 nm in thickness, were fabricated by pulsed-laser deposition. Both crystallography and cation chemistry were consistent with successful growth of the BST perovskite. At room temperature, all capacitors displayed frequency dispersion such that epsilon (100 kHz)/epsilon (100 Hz) was greater than 0.75. The dielectric constant as a function of thickness was fitted, using the series capacitor model, for BST thicknesses greater than 70 nm. This yielded a large interfacial d(i)/epsilon (i) ratio of 0.40 +/-0.05 nm, implying a highly visible parasitic dead layer within the capacitor structure. Modeled consideration of the dielectric behavior for BST films, whose total thickness was below that of the dead layer, predicted anomalies in the plots of d/epsilon against d at the dead-layer thickness. In the capacitors studied here, no anomaly was observed. Hence, either (i) 7.5 nm is an upper limit for the total dead-layer thickness in the SRO/BST/Au system, or (ii) dielectric collapse is not associated with a distinct interfacial dead layer, and is instead due to a through-film effect. (C) 2001 American Institute of Physics.

Polycrystalline silicon film growth in a SiF4/SiH4/H2 plasma

The growth of polycrystalline silicon (polysilicon) films from SiF4/SiH4/H2 gas mixtures is reported. The polysilicon films have been deposited in a multi process reactor by a PECVD process. The effect of r.f. power, chamber temperature and gas flow ratios on grain size and deposition rate have been determined. The fluorine concentration and the grain sizes of the films have been determined by SIMS and atomic force microscopy (AFM), respectively. Grain sizes in excess of 900 A are reported for layers deposited at 300°C. © 1999 Published by Elsevier Science S.A. All rights reserved.

Characterization of Hydrothermally Annealed Low Temperature Bioactive Thin Film Coatings of Hydroxyapatite on TiAl6V4 Implant material

This thesis summarizes the results on the growth and characterisation of thin films of HA grown on TiAl6V4 (Ti) implant material at a lower substrate temperature by a combination of Pulsed laser deposition and a hydrothermal treatment to get sufficiently strong crystalline films suitable for orthopaedic applications. The comparison of the properties of the coated substrate has been made with other surface modification techniques like anodization and chemical etching. The in-vitro study has been conducted on the surface modified implants to assess its cell viability. A molecular level study has been conducted to analyze the adhesion mechanism of protein adhesion molecules on to HA coated implants.

Promoted water transport across graphene oxide-poly(amide) thin film composite membranes and their antibacterial activity

Hybrid composite membranes have great potential for desalination applications since water transport can be favorably promoted by selective diffusion at the interface between matrix and reinforcement materials. In this paper, graphene oxide nano-sheets were successfully incorporated across 200nm thick poly(amide) films by interfacial polymerization to form novel thin-film composite membranes. The impact of the graphene oxide on the morphology, chemistry, and surface charge of the ultra-thin poly(amide) layer, and the ability to desalinate seawater was investigated. The graphene oxide nano-sheets were found to be well dispersed across the composite membranes, leading to a lower membrane surface energy and an enhanced hydrophilicity. The iso-electric point of the samples, key to surface charge repulsion during desalination, was found to be consistently shifted to higher pH values with an increasing graphene oxide content. Compared to a pristine poly(amide) membrane, the pure water flux across the composite membranes with 0.12wt.% of graphene oxide was also found to increase by up to 80% from 0.122 to 0.219L·μm·m-2·h-1·bar-1 without significantly affecting salt selectivity. Furthermore, the inhibitory effects of the composite membrane on microbial growth were evaluated and the novel composite membranes exhibited superior anti-microbial activity and may act as a potential anti-fouling membrane material.

Amine enrichment of thin-film composite membranes via low pressure plasma polymerization for antimicrobial adhesion

Thin-film composite membranes, primarily based on poly(amide) (PA) semipermeable materials, are nowadays the dominant technology used in pressure driven water desalination systems. Despite offering superior water permeation and salt selectivity, their surface properties, such as their charge and roughness, cannot be extensively tuned due to the intrinsic fabrication process of the membranes by interfacial polymerization. The alteration of these properties would lead to a better control of the materials surface zeta potential, which is critical to finely tune selectivity and enhance the membrane materials stability when exposed to complex industrial waste streams. Low pressure plasma was employed to introduce amine functionalities onto the PA surface of commercially available thin-film composite (TFC) membranes. Morphological changes after plasma polymerization were analyzed by SEM and AFM, and average surface roughness decreased by 29%. Amine enrichment provided isoelectric point changes from pH 3.7 to 5.2 for 5 to 15 min of plasma polymerization time. Synchrotron FTIR mappings of the amine-modified surface indicated the addition of a discrete 60 nm film to the PA layer. Furthermore, metal affinity was confirmed by the enhanced binding of silver to the modified surface, supported by an increased antimicrobial functionality with demonstrable elimination of E. coli growth. Essential salt rejection was shown minimally compromised for faster polymerization processes. Plasma polymerization is therefore a viable route to producing functional amine enriched thin-film composite PA membrane surfaces.