In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate

Based upon a hybrid ferromagnet/semiconductor structure consisting of two-dimensional electron gas and a pair of surface ferromagnetic stripes on top, we have theoretically investigated the effect of in-plane stray field omitted frequently in previous studies on the spin-dependent ballistic transport properties in hybrid structure. It is demonstrated here that, in combination with an external-controllable electrostatic modulation, the concerned structure shows a similar function as a lateral spin-polarized resonant tunneling device, where the strong spin-filtering effect occurs and nearly single-mode polarization is anticipated for the proper modulation. More importantly, the spin polarity of transmission electron can be easily transferred from one extreme to the other by switching the magnetization of stripes, showing the promising application as an efficient spin aligner in the developing semiconductor spintronics.

The finite bandwidth model for spin fluctuations in Pd

The frequency dependence of the electron-spin fluctuation spectrum, P(Q), is calculated in the finite bandwidth model. We find that for Pd, which has a nearly full d-band, the magnitude, the range, and the peak frequency of P(Q) are greatly reduced from those in the standard spin fluctuation theory. The electron self-energy due to spin fluctuations is calculated within the finite bandwidth model. Vertex corrections are examined, and we find that Migdal's theorem is valid for spin fluctuations in the nearly full band. The conductance of a normal metal-insulator-normal metal tunnel junction is examined when spin fluctuations are present in one electrode. We find that for the nearly full band, the momentum independent self-energy due to spin fluctuations enters the expression for the tunneling conductance with approximately the same weight as the self-energy due to phonons. The effect of spin fluctuations on the tunneling conductance is slight within the finite bandwidth model for Pd. The effect of spin fluctuations on the tunneling conductance of a metal with a less full d-band than Pd may be more pronounced. However, in this case the tunneling conductance is not simply proportional to the self-energy.

Spin filtering through ferromagnetic BiMnO3 tunnel barriers

We report on experiments of spin filtering through ultrathin single-crystal layers of the insulating and ferromagnetic oxide BiMnO3 (BMO). The spin polarization of the electrons tunneling from a gold electrode through BMO is analyzed with a counterelectrode of the half-metallic oxide La2/3Sr1/3MnO3 (LSMO). At 3 K we find a 50% change of the tunnel resistances according to whether the magnetizations of BMO and LSMO are parallel or opposite. This effect corresponds to a spin-filtering efficiency of up to 22%. Our results thus show the potential of complex ferromagnetic insulating oxides for spin filtering and injection.

Microwave absorption and magnetization tunneling in Mn12-acetate molecular clusters

In this paper we study the effect of microwave absorption on the quantum relaxation rate of Mn12 molecular clusters. We have determined first the resonant frequencies of a microwave resonator containing a single crystal of Mn12-Acetate and measured initial isothermal magnetization curves while microwave power was put into the resonator. We have found that the tunneling rate changes one order of magnitude for certain frequencies. This suggests that the microwave shaking of the nuclear spin and molecular vibrational degrees of freedom is responsible for the huge increasing of the tunneling rate.

Non-Zeeman splitting for a spin-resolved STM with a Kondo adatom in a spin-polarized two-dimensional electron gas

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Spin-resolved local density of states for an Anderson adatom in a ferromagnetic island

In this work, we investigate theoretically the spin-resolved local density of states (SR-LDOS) of a ferromagnetic (FM) island hybridized with an adatom, which is described by the Single Impurity Anderson Model (SIAM). Our results are comparable with Scanning Tunneling Microscope (STM) experimental data. © 2012 Springer Science+Business Media, LLC.

Graphene sheet versus two-dimensional electron gas: A relativistic Fano spin filter via STM and AFM tips

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Spin polarized transport in manganese oxide double-perovskite thin films

Gegenstand dieser Arbeit war die Untersuchung von metallischen gemischtvalenten Manganaten und magnetischen Doppelperowskiten. Aufgrund ihres großen negativen Magnetowiderstandes (MW) sind diese halbmetallischen Oxide interessant für mögliche technische Anwendungen, z.B. als Leseköpfe in Festplatten. Es wurden die kristallographischen, elektronischen und magnetischen Eigenschaften von epitaktischen Dünnschichten und polykristallinen Pulverproben bestimmt.Epitaktische Dünnschichten der Verbindungen La_0.67Ca_0.33MnO₃ und La_0.67Sr_0.33MnO₃ wurdenmit Kaltkathodenzerstäubung und Laserablation auf einkristallinen Substraten wie SrTiO₃abgeschieden. Mit Hall-Effekt Messungen wurde ein Zusammenbruch der Ladungsträgerdichte bei der Curie-Temperatur T_C beobachtet.Mit dem Wechsel des Dotierungsatoms A von Ca (T_C=232 K) zu Sr (T_C=345 K)in La_0.67A_0.33MnO₃ konnte die Feldsensitivität des Widerstandes bei Raumtemperatur gesteigert werden. Um die Sensitivität weiter zu erhöhen wurde die hohe Spinpolarisation von nahezu 100% in Tunnelexperimenten ausgenutzt. Dazu wurden biepitaktische La_0.67Ca_0.33MnO₃ Schichten auf SrTiO₃ Bikristallsubstraten hergestellt. Die Abhängigkeit des Tunnelmagnetowiderstandes (TMW) vom magnetischen Feld, Temperatur und Strum war ein Schwerpunkt der Untersuchung. Mittels spinpolarisierten Tunnelns durch die künstliche Korngrenze konnte ein hysteretischer TMW von 70% bei 4 K in kleinen Magnetfeldern von 120 Oe gemessen werden. Eine weitere magnetische Oxidverbindung, der Doppelperowskit Sr₂FeMoO₆ miteine Curie-Temperatur oberhalb 400 K und einem großen MW wurde mittels Laserablation hergestellt. Die Proben zeigten erstmals das Sättigunsmoment, welches von einer idealen ferrimagnetischen Anordnung der Fe und Mo Ionen erwartet wird. Mit Hilfe von Magnetotransportmessungen und Röntgendiffraktometrie konnte eine Abhängigkeit zwischen Kristallstruktur (Ordnung oder Unordnung im Fe, Mo Untergitter) und elektronischem Transport (metallisch oder halbleitend) aufgedeckt werden.Eine zweiter Doppelperowskit Ca₂FeReO₆ wurde im Detail als Pulverprobe untersucht. Diese Verbindung besitzt die höchste Curie-Temperatur von 540 K, die bis jetzt in magnetischen Perowskiten gefunden wurde. Mit Neutronenstreuung wurde eine verzerrte monoklinische Struktur und eine Phasenseparation aufgedeckt.

Magnetic tunneling junctions with the Heusler compound Co 2 Cr 0.6 Fe 0.4 Al

Materialen mit sehr hoher Spinpolarisation werden für Anwendungen im Bereich der Spin-Elektronik benötigt. Deshalb werden große Forschungsanstrengungen zur Untersuchung der Eigenschaften von Verbindungen mit potentiell halbmetallischem Charakter, d. h.mit 100% Spinpolarisation, unternommen. In halbmetallischen Verbindungen, erwartet man eine Lücke in der Zustandsdichte an der Fermi Energie für Ladungsträger einer Spinrichtung, wahrend die Ladungsträger mit der anderen Spinrichtung sich metallisch verhalten. Eine Konsequenz davon ist, dass ein Strom, der durch solche Verbindung fließt, voll spinpolarisiert ist. Die hohe Curie-Temperatur Tc (800 K) und der theoretisch vorhergesagte halbmetallische Charakter machen Co2Cr0.6Fe0.4Al (CCFA) zu einem guten Kandidaten für Spintronik-Anwendungen wie magnetische Tunnelkontakte (MTJs = Magnetic Tunneling Junctions). In dieser Arbeit werden die Ergebnisse der Untersuchung der elektronischen und strukturellen Eigenschaften von dünnen CCFA Schichten dargestellt. Diese Schichten wurden in MTJs integriert und der Tunnel-Magnetowiderstands-Effekt untersucht. Hauptziele waren die Messung der Spinpolarisation und Untersuchungen der elektronischen Struktur von CCFA. Der Einfluss verschiedener Depositionsparameter auf die Eigenschaften der Schichten, speziell auf der Oberflächenordnung und damit letztlich auf den Tunnel-Magnetowiderstand (TMR), wurde bestimmt. Epitaktische d¨unne CCFA Schichten mit zwei verschiedenen Wachstumsrichtungen wurden auf verschiedene Substrate und Pufferschichten deponiert. Ein Temperverfahren wurde eingesetzt um die strukturelle Eigenschaften der dünnen Schichten zu verbessern. Für die MTJs wurde Al2O3 als Barrierenmaterial verwendet und Co als Gegenelektrode gewählt. Die Mehrschicht-Systeme wurden in Mesa-Geometrie mit lithographischen Methoden strukturiert. Eine maximal Jullière Spinpolarisation von 54% wurde an Tunnelkontakte mit epitaktischen CCFA Schichten gemessen. Ein starker Einfluss der Tempernbedingungen auf dem TMR wurde festgestellt. Eine Erhörung des TMR wurde mit einer Verbesserung der Oberflächenordung der CCFA Schichten korreliert. Spektroskopische Messungen wurden an den MTJs durchgeführt. Diesen Messungen liefern Hinweise auf inelastische Elektron-Magnon und Elektron-Phonon Stossprozesse an den Grenzflächen. Einige der beobachteten Strukturen konnten mit der berechneten elektronischen Struktur von CCFA korreliert worden.

Band structure of Heusler compounds studied by photoemission and tunneling spectroscopy

Heusler compounds are key materials for spintronic applications. They have attracted a lot of interest due to their half-metallic properties predicted by band structure calculations.rnThe aim of this work is to evaluate experimentally the validity of the predictions of half metallicity by band structure calculations for two specific Heusler compounds, Co2FeAl0.3Si0.7 and Co2MnGa. Two different spectroscopy methods for the analysis of the electronic properties were used: Angular Resolved Ultra-violet Photoemission Spectroscopy (ARUPS) and Tunneling Spectroscopy.rnHeusler compounds are prepared as thin films by RF-sputtering in an ultra-high vacuum system. rnFor the characterization of the samples, bulk and surface crystallographic and magnetic properties of Co2FeAl0.3Si0.7 and Co2MnGa are studied. X-ray and electron diffraction reveal a bulk and surface crossover between two different types of sublattice order (from B2 to L21) with increasing annealing temperature. X-ray magnetic circular dichroism results show that the magnetic properties in the surface and bulk are identical, although the magnetic moments obtained are 5% below from the theoretically predicted.rnBy ARUPS evidence for the validity of the predicted total bulk density of states (DOS) was demonstrated for both Heusler compounds. Additional ARUPS intensity contributions close to the Fermi energy indicates the presence of a specific surface DOS. Moreover, it is demonstrated that the crystallographic order, controlled by annealing, plays an important role on brodening effects of DOS features. Improving order resulted in better defined ARUPS features.rnTunneling magnetoresistance measurements of Co2FeAl0.3Si0.7 and Co2MnGa based MTJ’s result in a Co2FeAl0.3Si0.7 spin polarization of 44%, which is the highest experimentally obtained value for this compound, although it is lower than the 100% predicted. For Co2MnGa no high TMR was achieved.rnUnpolarized tunneling spectroscopy reveals contribution of interface states close to the Fermi energy. Additionally magnon excitations due to magnetic impurities at the interface are observed. Such contributions can be the reason of a reduced TMR compared to the theoretical predictions. Nevertheless, for energies close to the Fermi energy and for Co2MnGa, the validity of the band structure calculations is demonstrated with this technique as well.

Charge and spin transport in nanoscale junction from first principles

Recently nanoscale junctions consisting of 0-D nanostructures (single molecule) or 1-D nanostructures (semiconducting nanowire) sandwiched between two metal electrodes are successfully fabricated and characterized. What lacks in the recent developments is the understanding of the mechanism behind the observed phenomena at the level of atoms and electrons. For example, the origin of observed switching effect in a semiconducting nanowire due to the influence of an external gate bias is not yet understood at the electronic structure level. On the same context, different experimental groups have reported different signs in tunneling magneto-resistance for the same organic spin valve structure, which has baffled researchers working in this field. In this thesis, we present the answers to some of these subtle questions by investigating the charge and spin transport in different nanoscale junctions. A parameter-free, single particle Green’s function approach in conjunction with a posteriori density functional theory (DFT) involving a hybrid orbital dependent functional is used to calculate the tunneling current in the coherent transport limit. The effect of spin polarization is explicitly incorporated to investigate spin transport in a nanoscale junction. Through the electron transport studies in PbS nanowire junction, a new orbital controlled mechanism behind the switching of the current is proposed. It can explain the switching behavior, not only in PbS nanowire, but in other lead-chalcogenide nanowires as well. Beside this, the electronic structure properties of this nanowire are studied using periodic DFT. The quantum confinement effect was investigated by calculating the bandgap of PbS nanowires with different diameters. Subsequently, we explain an observed semiconducting to metallic phase transition of this nanowire by calculating the bandgap of the nanowire under uniform radial strain. The compressive radial strain on the nanowire was found to be responsible for the metallic to semiconducting phase transition. Apart from studying one dimensional nanostructure, we also present transport properties in zero dimensional single molecular junctions. We proposed a new codoping approach in a single molecular carborane junction, where a cation and an anion are simultaneously doped to find the role of a single atom in the device. The main purpose was to build a molecular junction where a single atom can dictate the flow of electrons in a circuit. Recent observations of both positive and negative sign in tunneling magnetoresistance (TMR) the using same organic spin-valve structure hasmystified researchers. From our spin dependent transport studies in a prototypical organic molecular tunneling device, we found that a 3% change in metal-molecule interfacial distance can alter the sign of TMR. Changing the interfacial distance by 3%, the number of participating eigenstates as well as their orbital characteristic changes for anti-parallel configuration of the magnetization at the two electrodes, leading to the sign reversal of the TMR. Apart from this, the magnetic proximity effect under applied bias is investigated quantitatively, which can be used to understand the observed unexpectedmagnetismin carbon basedmaterials when they are in close proximity with magnetic substrates.

Spin depolarization in the transport of holes across GaxMn1−xAs∕GayAl1−yAs∕p-GaAs

We study the spin polarization of tunneling holes injected from ferromagnetic GaMnAs into a p-doped semiconductor through a tunneling barrier. We find that spin-orbit interaction in the barrier and in the drain limits severely spin injection. Spin depolarization is stronger when the magnetization is parallel to the current than when it is perpendicular to it.

Spin dynamics of current-driven single magnetic adatoms and molecules

A scanning tunneling microscope can probe the inelastic spin excitations of a single magnetic atom in a surface via spin-flip assisted tunneling in which transport electrons exchange spin and energy with the atomic spin. If the inelastic transport time, defined as the average time elapsed between two inelastic spin flip events, is shorter than the atom spin-relaxation time, the scanning tunnel microscope (STM) current can drive the spin out of equilibrium. Here we model this process using rate equations and a model Hamiltonian that describes successfully spin-flip-assisted tunneling experiments, including a single Mn atom, a Mn dimer, and Fe Phthalocyanine molecules. When the STM current is not spin polarized, the nonequilibrium spin dynamics of the magnetic atom results in nonmonotonic dI/dV curves. In the case of spin-polarized STM current, the spin orientation of the magnetic atom can be controlled parallel or antiparallel to the magnetic moment of the tip. Thus, spin-polarized STM tips can be used both to probe and to control the magnetic moment of a single atom.

Spin-transfer torque on a single magnetic adatom

We theoretically show how the spin orientation of a single magnetic adatom can be controlled by spin polarized electrons in a scanning tunneling microscope configuration. The underlying physical mechanism is spin assisted inelastic tunneling. By changing the direction of the applied current, the orientation of the magnetic adatom can be completely reversed on a time scale that ranges from a few nanoseconds to microseconds, depending on bias and temperature. The changes in the adatom magnetization direction are, in turn, reflected in the tunneling conductance.

Inelastic electron tunneling spectroscopy of a Mn dimer

A scanning tunneling microscope can probe the inelastic spin excitations of single magnetic atoms in a surface via spin-flip assisted tunneling. A particular and intriguing case is the Mn dimer case. We show here that the existing theories for inelastic transport spectroscopy do not explain the observed spin transitions when both atoms are equally coupled to the scanning tunneling microscope tip and the substrate, the most likely experimental situation. The hyperfine coupling to the nuclear spins is shown to lead to a finite excitation amplitude, but the physical mechanism leading to the large inelastic signal observed is still unknown. We discuss some other alternatives that break the symmetry of the system and allow for larger excitation probabilities.