Spin depolarization in the transport of holes across GaxMn1−xAs∕GayAl1−yAs∕p-GaAs
| Contribuinte(s) |
Universidad de Alicante. Departamento de Física Aplicada Grupo de Nanofísica |
|---|---|
| Data(s) |
21/11/2012
21/11/2012
23/12/2004
|
| Resumo |
We study the spin polarization of tunneling holes injected from ferromagnetic GaMnAs into a p-doped semiconductor through a tunneling barrier. We find that spin-orbit interaction in the barrier and in the drain limits severely spin injection. Spin depolarization is stronger when the magnetization is parallel to the current than when it is perpendicular to it. Work supported in part by MCYT of Spain under Contracts No. MAT2002-04429-C03-01, MAT2002-00139, and MAT2003-08109-C02-01, Fundación Ramón Areces, Ramon y Cajal Program, and UE within the Research Training Network COLLECT. |
| Identificador |
BREY, L.; FERNÁNDEZ-ROSSIER, J.; TEJEDOR, C. “Spin depolarization in the transport of holes across GaxMn1−xAs∕GayAl1−yAs∕p-GaAs”. Physical Review B. Vol. 70, No. 23 (2004). ISSN 1098-0121, pp. 235334-1/4 1098-0121 (Print) 1550-235X (Online) http://hdl.handle.net/10045/25221 10.1103/PhysRevB.70.235334 |
| Idioma(s) |
eng |
| Publicador |
American Physical Society |
| Relação |
http://dx.doi.org/10.1103/PhysRevB.70.235334 |
| Direitos |
© 2004 The American Physical Society info:eu-repo/semantics/openAccess |
| Palavras-Chave | #Spin depolarization #Magnetization #Ferromagnetic GaMnAs #Doped semiconductor #Transport of holes #Física de la Materia Condensada |
| Tipo |
info:eu-repo/semantics/article |
