980 resultados para Power Semiconductor Devices
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The focusing of multimode laser diode beams is probably the most significant problem that hinders the expansion of the high-power semiconductor lasers in many spatially-demanding applications. Generally, the 'quality' of laser beams is characterized by so-called 'beam propagation parameter' M2, which is defined as the ratio of the divergence of the laser beam to that of a diffraction-limited counterpart. Therefore, M2 determines the ratio of the beam focal-spot size to that of the 'ideal' Gaussian beam focused by the same optical system. Typically, M2 takes the value of 20-50 for high-power broad-stripe laser diodes thus making the focal-spot 1-2 orders of magnitude larger than the diffraction limit. The idea of 'superfocusing' for high-M2 beams relies on a technique developed for the generation of Bessel beams from laser diodes using a cone-shaped lens (axicon). With traditional focusing of multimode radiation, different curvatures of the wavefronts of the various constituent modes lead to a shift of their focal points along the optical axis that in turn implies larger focal-spot sizes with correspondingly increased values of M2. In contrast, the generation of a Bessel-type beam with an axicon relies on 'self-interference' of each mode thus eliminating the underlying reason for an increase in the focal-spot size. For an experimental demonstration of the proposed technique, we used a fiber-coupled laser diode with M2 below 20 and an emission wavelength in ~1μm range. Utilization of the axicons with apex angle of 140deg, made by direct laser writing on a fiber tip, enabled the demonstration of an order of magnitude decrease of the focal-spot size compared to that achievable using an 'ideal' lens of unity numerical aperture. © 2014 SPIE.
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Compact and tunable semiconductor terahertz sources providing direct electrical control, efficient operation at room temperatures and device integration opportunities are of great interest at the present time. One of the most well-established techniques for terahertz generation utilises photoconductive antennas driven by ultrafast pulsed or dual wavelength continuous wave laser systems, though some limitations, such as confined optical wavelength pumping range and thermal breakdown, still exist. The use of quantum dot-based semiconductor materials, having unique carrier dynamics and material properties, can help to overcome limitations and enable efficient optical-to-terahertz signal conversion at room temperatures. Here we discuss the construction of novel and versatile terahertz transceiver systems based on quantum dot semiconductor devices. Configurable, energy-dependent optical and electronic characteristics of quantum-dot-based semiconductors are described, and the resonant response to optical pump wavelength is revealed. Terahertz signal generation and detection at energies that resonantly excite only the implanted quantum dots opens the potential for using compact quantum dot-based semiconductor lasers as pump sources. Proof-of-concept experiments are demonstrated here that show quantum dot-based samples to have higher optical pump damage thresholds and reduced carrier lifetime with increasing pump power.
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Wind energy installations are increasing in power systems worldwide and wind generation capacity tends to be located some distance from load centers. A conflict may arise at times of high wind generation when it becomes necessary to curtail wind energy in order to maintain conventional generators on-line for the provision of voltage control support at load centers. Using the island of Ireland as a case study and presenting commercially available reactive power support devices as possible solutions to the voltage control problems in urban areas, this paper explores the reduction in total generation costs resulting from the relaxation of the operational constraints requiring conventional generators to be kept on-line near load centers for reactive power support. The paper shows that by 2020 there will be possible savings of 87€m per annum and a reduction in wind curtailment of more than a percentage point if measures are taken to relax these constraints.
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Two trends are emerging from modern electric power systems: the growth of renewable (e.g., solar and wind) generation, and the integration of information technologies and advanced power electronics. The former introduces large, rapid, and random fluctuations in power supply, demand, frequency, and voltage, which become a major challenge for real-time operation of power systems. The latter creates a tremendous number of controllable intelligent endpoints such as smart buildings and appliances, electric vehicles, energy storage devices, and power electronic devices that can sense, compute, communicate, and actuate. Most of these endpoints are distributed on the load side of power systems, in contrast to traditional control resources such as centralized bulk generators. This thesis focuses on controlling power systems in real time, using these load side resources. Specifically, it studies two problems.
(1) Distributed load-side frequency control: We establish a mathematical framework to design distributed frequency control algorithms for flexible electric loads. In this framework, we formulate a category of optimization problems, called optimal load control (OLC), to incorporate the goals of frequency control, such as balancing power supply and demand, restoring frequency to its nominal value, restoring inter-area power flows, etc., in a way that minimizes total disutility for the loads to participate in frequency control by deviating from their nominal power usage. By exploiting distributed algorithms to solve OLC and analyzing convergence of these algorithms, we design distributed load-side controllers and prove stability of closed-loop power systems governed by these controllers. This general framework is adapted and applied to different types of power systems described by different models, or to achieve different levels of control goals under different operation scenarios. We first consider a dynamically coherent power system which can be equivalently modeled with a single synchronous machine. We then extend our framework to a multi-machine power network, where we consider primary and secondary frequency controls, linear and nonlinear power flow models, and the interactions between generator dynamics and load control.
(2) Two-timescale voltage control: The voltage of a power distribution system must be maintained closely around its nominal value in real time, even in the presence of highly volatile power supply or demand. For this purpose, we jointly control two types of reactive power sources: a capacitor operating at a slow timescale, and a power electronic device, such as a smart inverter or a D-STATCOM, operating at a fast timescale. Their control actions are solved from optimal power flow problems at two timescales. Specifically, the slow-timescale problem is a chance-constrained optimization, which minimizes power loss and regulates the voltage at the current time instant while limiting the probability of future voltage violations due to stochastic changes in power supply or demand. This control framework forms the basis of an optimal sizing problem, which determines the installation capacities of the control devices by minimizing the sum of power loss and capital cost. We develop computationally efficient heuristics to solve the optimal sizing problem and implement real-time control. Numerical experiments show that the proposed sizing and control schemes significantly improve the reliability of voltage control with a moderate increase in cost.
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Este trabalho utiliza uma estrutura pin empilhada, baseada numa liga de siliceto de carbono amorfo hidrogenado (a-Si:H e/ou a-SiC:H), que funciona como filtro óptico na zona visível do espectro electromagnético. Pretende-se utilizar este dispositivo para realizar a demultiplexagem de sinais ópticos e desenvolver um algoritmo que permita fazer o reconhecimento autónomo do sinal transmitido em cada canal. O objectivo desta tese visa implementar um algoritmo que permita o reconhecimento autónomo da informação transmitida por cada canal através da leitura da fotocorrente fornecida pelo dispositivo. O tema deste trabalho resulta das conclusões de trabalhos anteriores, em que este dispositivo e outros de configuração idêntica foram analisados, de forma a explorar a sua utilização na implementação da tecnologia WDM. Neste trabalho foram utilizados três canais de transmissão (Azul – 470 nm, Verde – 525 nm e Vermelho – 626 nm) e vários tipos de radiação de fundo. Foram realizadas medidas da resposta espectral e da resposta temporal da fotocorrente do dispositivo, em diferentes condições experimentais. Variou-se o comprimento de onda do canal e o comprimento de onda do fundo aplicado, mantendo-se constante a intensidade do canal e a frequência de transmissão. Os resultados obtidos permitiram aferir sobre a influência da presença da radiação de fundo e da tensão aplicada ao dispositivo, usando diferentes sequências de dados transmitidos nos vários canais. Verificou-se, que sob polarização inversa, a radiação de fundo vermelho amplifica os valores de fotocorrente do canal azul e a radiação de fundo azul amplifica o canal vermelho e verde. Para polarização directa, apenas a radiação de fundo azul amplifica os valores de fotocorrente do canal vermelho. Enquanto para ambas as polarizações, a radiação de fundo verde, não tem uma grande influência nos restantes canais. Foram implementados dois algoritmos para proceder ao reconhecimento da informação de cada canal. Na primeira abordagem usou-se a informação contida nas medidas de fotocorrente geradas pelo dispositivo sob polarização inversa e directa. Pela comparação das duas medidas desenvolveu-se e testou-se um algoritmo que permite o reconhecimento dos canais individuais. Numa segunda abordagem procedeu-se ao reconhecimento da informação de cada canal mas com aplicação de radiação de fundo, tendo-se usado a informação contida nas medidas de fotocorrente geradas pelo dispositivo sob polarização inversa sem aplicação de radiação de fundo com a informação contida nas medidas de fotocorrente geradas pelo dispositivo sob polarização inversa com aplicação de radiação de fundo. Pela comparação destas duas medidas desenvolveu-se e testou-se o segundo algoritmo que permite o reconhecimento dos canais individuais com base na aplicação de radiação de fundo.
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O estudo das curvas características de um transístor permite conhecer um conjunto de parâmetros essenciais à sua utilização tanto no domínio da amplificação de sinais como em circuitos de comutação. Deste estudo é possível obter dados em condições que muitas vezes não constam na documentação fornecida pelos fabricantes. O trabalho que aqui se apresenta consiste no desenvolvimento de um sistema que permite de forma simples, eficiente e económica obter as curvas características de um transístor (bipolar de junção, efeito de campo de junção e efeito de campo de metal-óxido semicondutor), podendo ainda ser utilizado como instrumento pedagógico na introdução ao estudo dos dispositivos semicondutores ou no projecto de amplificadores transistorizados. O sistema é constituído por uma unidade de condicionamento de sinal, uma unidade de processamento de dados (hardware) e por um programa informático que permite o processamento gráfico dos dados obtidos, isto é, traçar as curvas características do transístor. O seu princípio de funcionamento consiste na utilização de um conversor Digital-Analógico (DAC) como fonte de tensão variável, alimentando a base (TBJ) ou a porta (JFET e MOSFET) do dispositivo a testar. Um segundo conversor fornece a variação da tensão VCE ou VDS necessária à obtenção de cada uma das curvas. O controlo do processo é garantido por uma unidade de processamento local, baseada num microcontrolador da família 8051, responsável pela leitura dos valores em corrente e em tensão recorrendo a conversores Analógico-Digital (ADC). Depois de processados, os dados são transmitidos através de uma ligação USB para um computador no qual um programa procede à representação gráfica, das curvas características de saída e à determinação de outros parâmetros característicos do dispositivo semicondutor em teste. A utilização de componentes convencionais e a simplicidade construtiva do projecto tornam este sistema económico, de fácil utilização e flexível, pois permite com pequenas alterações
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Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações
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A mathematical model that simulates the operation of a solid-state bipolar Marx modulator topology, including the influence of parasitic capacitances is presented and discussed as a tool to analyze the circuit behavior and to assist the design engineer to select the semiconductor components and to enhance the operating performance. Simulations show good agreement with experimental results, considering a four stage circuit assembled with 1200 V isolated gate bipolar transistors and diodes, operating at 1000 V dc input voltage and 1-kHz frequency, giving 4 kV and 10-mu s output pulses into several resistive loads. Results show that parasitic capacitances between Marx cells to ground can significantly load the solid-state switches, adding new operating circuit conditions.
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A very important part of the globally produced energy is consumed in buildings, being an important share frequently used in the HVAC systems. These ones are increasing both in performance and in complexity, taking advantage from the use of the recent advances in mechanical and power electronic devices, particularly in the speed variation field. However the improved efficiency only occurs while the HVAC unit is working in the conditions specified by the manufacturer, otherwise the energy consumption raises to values considerably higher than the nominal ones. The adequate maintenance enforces the system to run on its nominal performance and the contrary has undesirable impact both in the performance and in the system expected life time. Therefore, HVAC field maintenance assumes a very important role in the global building sustainability concept. This work presents some results of an incorrect use of HVAC and the associated electric energy overconsumption that can assume values 50% higher than those that occur when the installation is operated according to the adequate maintenance plan.
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El projecte s'ha centrat en el disseny i desenvolupament de laboratoris virtuals per a la docència del dispositius i mètodes de gestió d’energia. Això s’ha realitzat a dos nivells clarament diferenciats, el primer grup de laboratoris correspon als convertidors electrònics de potencia i el segon grup de laboratoris correspon a un conjunt de casos d’aplicacions concretes. En el primer grup es descriu el detall del funcionament dels diferents elements mentre que en el segon els descriuen les idees i conceptes bàsics de funcionament. Els laboratoris virtuals de convertidors electrònics de potència inclouen el convertidor elevador (boost), el convertidor reductor (buck), i convertidors acobladors magnèticament. Aquestes permeten estudiar el comportament dinàmica des d’un punt de vista commutat o bé promitjat, les aplicacions incorporen també la possibilitat de sintonitzar els controladors. Aquestes aplicacions han estat desenvolupades per ser un complement per les sessions de pràctiques presencials. Els laboratoris virtuals d’aplicacions, inclouen els sistema de transport metropolità, el vehicle híbrid i els sistemes de gestió de talls transitoris en el subministrament d’energia principalment. Aquestes laboratoris permeten introduir els estudiants de forma qualitativa en els diferents conceptes i tècniques emprades en els sistemes de generació, transport i transformació d’energia. Totes les aplicacions han estat desenvolupades emprant Easy JAVA Simulations, aquesta eina permet desenvolupar laboratoris multiplataforma fàcilment distribuïbles a través d’internet.
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We give a theoretical interpretation of the noise properties of Schottky barrier diodes based on the role played by the long range Coulomb interaction. We show that at low bias Schottky diodes display shot noise because the presence of the depletion layer makes the effects of the Coulomb interaction negligible on the current fluctuations. When the device passes from barrier to flat band conditions, the Coulomb interaction becomes active, thus introducing correlation between different current fluctuations. Therefore, the crossover between shot and thermal noise represents the suppression due to long range Coulomb interaction of the otherwise full shot noise. Similar ideas can be used to interpret the noise properties of other semiconductor devices.
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This paper describes a low-cost microprocessed instrument for in situ evaluating soil temperature profile ranging from -20.0°C to 99.9°C, and recording soil temperature data at eight depths from 2 to 128 cm. Of great importance in agriculture, soil temperature affects plant growth directly, and nutrient uptake as well as indirectly in soil water and gas flow, soil structure and nutrient availability. The developed instrument has potential applications in the soil science, when temperature monitoring is required. Results show that the instrument with its individual sensors guarantees ±0.25°C accuracy and 0.1°C resolution, making possible localized management changes within decision support systems. The instrument, based on complementary metal oxide semiconductor devices as well as thermocouples, operates in either automatic or non-automatic mode.
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Piikarbidi (SiC) on tunnettu korkealuokkaisena hioma-aineena ja hiekkapaperin pin-noitteena yli 100 vuoden ajan. Nykyisin ainetta käytetään pääasiassa puolijohteiden raaka-aineena. Piikarbidi on puolijohteena ylivoimainen tavanomaiseen piihin (Si) verrattuna lähes joka suhteessa johtuen sen kiderakenteesta, mutta sen valmistus on osoittautunut erittäin monimutkaiseksi johtuen pääasiassa vaikeudesta kasvattaa riittävän suuria ja laadukkaita SiC-kiteitä. Siksi tehoelektroniikan SiC-puolijohdekomponenttien laajamittaista käyttöä joudutaan yhä odottamaan. Tässä diplomityössä tehdään perusteellinen selvitys, miten piikarbidin valmistuspro-sessit eroavat normaaleista piin valmistusprosesseista, mitä etuja piikarbidin käytöllä saavutetaan ja vastaavasti mitä varjopuolia sillä on. Työssä selvitetään tällä hetkellä markkinoilla olevien SiC-tehopuolijohdekomponenttien ominaisuuksia, ketkä ovat teh-neet tutkimusta alalla, sekä esitetään arvioita SiC-tekniikan tulevaisuuden näkymistä.
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Verkon harmonisvirtoja rajoittavien standardien tiukentuessa joudutaan etenkin suuritehoisissa tehoelektronisissa laitteissa siirtymään aktiivisiin transistoriohjattuihin tasasuuntaajiin, jotka korjaavat tehokerrointa ja siten pienentävät verkkoon kytkeytyviä häiriövirtoja. Tässä diplomityössä esitellään yleisimpien kolmivaiheisten tasasuuntaajatopologioiden eroja ja vertaillaan puoliohjatun kolmikytkintopologian ja kuusikytkintopologian suorituskykyä tehokertoimen ja harmonissärön osalta, 16 kilowatin teholuokan taajuusmuuttajassa. Tasasuuntaajille tehtiin skalaariohjaukseen perustuva simulointimalli. Työn tavoitteena esitellään simulointitulokset harmonistason sekä tehokertoimen osalta. Työ liittyy Lappeenrannan teknillisen yliopiston sovelletun elektroniikan laboratorion ja Vacon Oyj:n yhteiseen hankkeeseen.
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Tässä työssä tarkastellaan taajuusmuuttajan vanhenemista syklisissä käytöissä puolijohdetehokomponenttien osalta. Laitteiden vikaantumisprosessien analysoimiseksi työssä suunnitellaan syklinen kestotestausjärjestelmä, joka mahdollistaa useamman taajuusmuuttajan yhtäaikaisen vanhentamisen. Jaksottaisesti toistuvat kuormitussyklit rasittavat termomekaanisesti taajuusmuuttajan tehomoduulin sisäisiä rakenteita suurten lämpötilavaihtelujen johdosta. Teoriaosuuden pääpaino kohdistuu puolijohdetehokomponenttien rakenteeseen, vikaantumisprosesseihin ja eliniän kartoittamiseen. Työssä käydään läpi yleisimpien pienijännitteisten moottorinohjausinverttereiden tehomoduulien mekaaniset rakenteet, tyypillisemmät syklisestä kuormituksesta johtuvat vikaantumisprosessit sekä puolijohdetehokomponenttivalmistajien käyttämät syklisen eliniän testausmenetelmät. Loppuosassa työtä suunnitellaan taajuusmuuttajan syklinen kestotestausjärjestelmä laitteiden keinotekoista vanhentamista varten. Testausjärjestelmällä voidaan kuormittaa useampaa taajuusmuuttajaa vuorottain mielivaltaisella kuormitusvirtaprofiililla. Laitteita vanhennettiin kaksi testierää kuormittamalla niitä jaksottaisesti hissikäytön tyypillisellä kuormitusprofiililla. Puolijohdetehokomponentin vanhenemisen edistystä seurattiin termisen impedanssiketjun mittausmenetelmällä, joka perustuu IGBT:n kollektoriemitterijännitteen lämpötilariippuvuuteen. Testilaitteiden puolijohdetehokomponentit hajosivat syklisen eliniän päättymiseen teoriassa esitettyjen vikaantumisprosessien seurauksesta. Tehomoduulien vika-analyysi osoittaa syklisen kestotestausjärjestelmän soveltuvaksi menetelmäksi tutkia erilaisten kuormitusprofiilien vaikutusta taajuusmuuttajan vanhenemiseen.