退火处理对ZnO薄膜发光特性的影响

用脉冲激光沉积法(PLD)在MgO(100)、a-Al2O3(0001)和MgAl2O4(111)衬底上沉积了ZnO薄膜，测量了它们的发射光谱，观察到430nm的蓝光发射，并研究了退火、衬底和激发波长对ZnO薄膜这一蓝光发射的影响。指出ZnO薄膜中430nm的蓝光发射是由锌填隙原子缺陷能级到价带顶能级间的跃迁以及电子从氧空位浅施主能级到价带顶能级间的跃迁两种机理共同作用的结果。在MgO衬底上沉积的ZnO薄膜在350nm光激发下蓝光发射峰最强。

Spectroscopic properties of Ce : YAP scintillation crystal grown by temperature gradient technique

Spectroscopic properties of Ce-doped yttrium orthoaluminate (Ce:YAlO3 or Ce:YAP) crystals grown by temperature gradient technique (TGT) were investigated, and the effects of the growth conditions on the properties were analyzed.. Methods of optical absorption (OA), photoluminescence (PL), photoluminescence decay (PLD), X-ray excited luminescence (XL) and cathodeluminescence (CL) were used in these investigations. The results showed that the absorption band peak at 202, 394 and 532 nm originated from F and F+ color center induced by the weak reducing growth atmosphere, green emission band near 500 ran derived from Ce3+ -Ce3+ pairs and band at 650 similar to 850 run from some unintentional impurity in crystals.

在钛酸锶衬底上外延生长ZnO薄膜及其性能研究

用脉冲激光淀积法（PLD）在（111）面SrTiO3衬底上外延生长ZnO单晶薄膜。样品分别在衬底温度为350℃、500℃、600℃下外延生长。X射线衍射（XRD）的结果表明,所得的ZnO单晶薄膜结晶性能好,只出现（002）和（004）两个衍射峰,（002）峰的半高宽度（FWHM）为0.23°。在荧光光谱中我们只观察到来源于带边激子跃迁的强UV发射,并且随着生长温度的升高,紫外峰的强度逐渐增强。样品的SEM图像表明所得ZnO薄膜表面平整,晶粒均匀。衬底温度为600℃时,所得到的ZnO薄膜结构完整,晶粒尺寸最

γ-LiAIO2上非极性ZnO薄膜制备及其光谱性质研究

利用激光脉冲沉积（PLD）技术在（302）γ-LiAIO2衬底上成功生长了非极性的a面（112^-0）γZnO薄膜．衬底温度为350℃时，薄膜是混合取向（a向和C向），以c面ZnO为主，且晶粒尺寸分布很宽；提高温度达500℃，薄膜变为单一的（1120）取向，摇摆曲线半高宽O.65^o，晶粒尺寸分布趋窄，利用偏振透射谱可以明显看出其面内的各向异性．衬底温度650℃下制备的样品晶粒继续长大，虽然摇摆曲线半高宽变大，但光致发光谱（PL）带边发射峰半高宽仅为105meV，比在350℃，500℃下制备的样品小1／5

γ-LiAlO_2上a面ZnO薄膜的光谱特性研究

利用激光脉冲沉积(PLD)技术在(302)γ-LiAlO2衬底上成功生长了非极性的a面(1120)ZnO薄膜,光致发光谱(PL)带边发射峰半峰宽仅为115meV.研究了非极性ZnO薄膜光谱特性的面内各向异性,发现随着入射光偏振方向改变,在偏振透射光谱上,吸收边移动了20meV,这与A、B激子和C激子的能量差一致;而在拉曼光谱上,激发光偏振方向的改变导致E2模式的强度发生明显改变.

Será que a posição é importante? : cenários de competição eleitoral a nível municipal para as eleições de 2010 na República Dominicana

Esta pesquisa estuda as eleições municipais de 2010 no relativo ao sucesso da Aliança PLD (partido no governo nacional ) desde a construção de cenários de competição eleitoral . Os cenários fazem uma tipologia baseada em dois critérios : a primeira foi a nomeação do prefeito (efeito incumbente ) ea segunda foi a filiação partidária do titular , ou que a não foi nomeado. Esta construção foi a solução encontrada para em primeiro lugar 1) lacunas nos dados disponíveis e realinhamentos eleitorais na pequena oposição sistematizada e , por outro , 2) a limitação que emana do estudo que envolve uma disputa eleitoral (em parte devido à falta de informações sobre repostulación em torneios anteriores). Estes cenários foram utilizados para explicar e contrastar as variáveis de percentagem dos municípios ganhos , percentagem média dos votos nos municípios e , como uma combinação dos dois anteriores , o percentual dos prefeitos ganhadores com uma maioria de membros do conselho (vereadores ). Principalmente estatísticas descritivas e análise de correlação, as considerações finais apresentadas como encontrar , o nível de favorabilidade de cada um desses cenários do partido no poder , em relação às eleições de 2010. Esta pesquisa concluiu que, nos municípios onde a alianca PLD tinha controle das prefeituras prefeito e, portanto, pudendo correr de novo ou não , a não - nomeação era o pior cenário de tudos ; em contraste , os cenários onde a oposição não nomeou aos prefeitos, o PLD estava em condições favoráveis para competir. Esta constatação supõe valor para estratégias eleitorais políticos.

Er3+-doped glass-polymer composite thin films fabricated using combinatorial pulsed laser deposition

Siloxane Polymer exhibits low loss in the 800-1500 nm range which varies between 0.01 and 0.66 dB cm1. It is for such low loss the material is one of the most promising candidates in the application of engineering passive and active optical devices [1, 2]. However, current polymer fabrication techniques do not provide a methodology which allows high structurally solubility of Er3+ ions in siloxane matrix. To address this problem, Yang et al.[3] demonstrated a channel waveguide amplifier with Nd 3+-complex doped polymer, whilst Wong and co-workers[4] employed Yb3+ and Er3+ co-doped polymer hosts for increasing the gain. In some recent research we demonstrated pulsed laser deposition of Er-doped tellurite glass thin films on siloxane polymer coated silica substrates[5]. Here an alternative methodology for multilayer polymer-glass composite thin films using Er3+ - Yb3+ co-doped phosphate modified tellurite (PT) glass and siloxane polymer is proposed by adopting combinatorial pulsed laser deposition (PLD). © 2011 IEEE.

缺磷胁迫导致高等植物叶片中磷脂酰甘油（PG）含量降低的机理研究

磷脂酰甘油（PG）是植物类囊体膜中唯一的磷脂，在它的sn-2位上总是连着一个棕榈酸（16：0）或反式十六碳烯酸（16：1 trans）。由于PG的分子结构独特，对它的功能已有了很多研究，目前认为PG在维持类囊体膜的结构与功能方面具有非常重要的作用。缺磷胁迫下，蓝藻、衣藻及拟南芥、大麦等物种中均检测到了PG含量的下降。对这一现象的常见解释是缺磷导致了PG生物合成受阻，从而引起了其含量的降低。但迄今为止尚没有试验证据支持。本研究比较了缺磷对不同叶龄的小麦与烟草叶片中PG含量与PG水解酶的活性的影响，同时对缺磷叶片酶粗提液水解外源PG后的主要产物、几种磷脂酶抑制剂对上述酶反应的影响等进行了研究，以阐明缺磷条件下叶片中PG含量下降的主要原 因。 缺磷小麦第一叶完全展开时，PG含量与PG水解酶活性均与对照相似;而第三叶完全展开时，尽管缺磷第三叶中PG水解酶活性也与对照相似，但其PG含量低于对照。这一结果表明，在小麦叶片完全展开之前，缺磷条件未影响叶片中的PG水解酶活性，第三叶中较低的PG含量应由PG的生物合成受阻引起。并且，由于缺磷植株第一叶完全展开时PG含量未受影响而第三叶中却表现出了轻微降低，可以推测叶片萌发越晚，PG生物合成受到的抑制就会越严重。 为了研究叶片衰老过程中PG含量下降的原因，我们比较了6，10，14与18日龄时缺磷与对照小麦植株第一叶中PG的相对含量与PG水解酶活性。研究发现：6日龄时，刚刚完全展开的缺磷和对照小麦第一叶中无论是PG含量还是PG水解酶活性都较为相似;而随着叶片的逐渐衰老，缺磷植株第一叶中PG含量大幅度下降，同时伴随着PG水解酶活性的急剧上升。18日龄时，缺磷小麦第一叶中的PG含量较对照降低了69.1%，其PG水解酶活性也远高于对照，37ºC下温育30min后，缺磷叶片的酶粗提液使外源PG含量降低了74.16%，而对照中只降低了13.7%。上述结果表明，缺磷条件下，小麦叶片中PG含量降低的程度与PG水解酶活性的强弱密切相关，PG水解加剧是导致老叶中PG含量降低的一个重要原因。 磷脂酶是水解磷脂的主要酶类。目前在植物体中发现的磷脂酶种类主要有磷脂酶D（PLD）、磷脂酶C（PLC）与磷脂酶A（PLA）。通过薄层层析（TLC），我们发现缺磷小麦叶片的酶粗提液水解外源PG后的主要产物是磷脂酸（PA）、二脂酰甘油（DAG）与游离脂肪酸（FFA）。将n-丁醇加入到缺磷小麦叶片的体外酶反应体系中后，观察到PA、DAG与FFA的生成量均表现出一定程度的降低。由于n-丁醇是PA经PLD途径生成的抑制剂，因此，上述结果表明PLD参与了缺磷条件下小麦叶片中PG的水解。硫酸新霉素是PLC的非特异性抑制剂，低浓度的硫酸新霉素（100μM 和 200μM ）加入到缺磷小麦叶片的体外酶反应体系后，三种产物的生成受到了严重抑制，表明PLC也与缺磷叶片中PG的降解密切相关。 为了进一步分析缺磷导致PG含量降低的原因，我们以烟草为试验材料，检测了缺磷胁迫对烟草嫩叶和老叶中的PG含量、PG水解酶活性、与PG降解相关的酶的种类及PLC、PLDα、PLDβ与PAT-1基因在mRNA上表达水平的的影响。结果表明，缺磷烟草叶片中PG含量的降低由PG生物合成受阻与PG降解加剧共同导致，PLC和PLD活性与烟草叶片中PG的降解有关。缺磷植株老叶中PG水解酶活性及PLC、PLDα、PLDβ基因在mRNA水平上的表达量均高于对照，表明在磷胁迫条件下，老叶中PG水解酶活性可能受到转录水平上的调节， PLC、PLDα、PLDβ转录活性的增强导致了PLC、PLD活性加强，从而引起PG降解的加剧，最终导致了PG含量的降低。与PLC、PLDα和PLDβ不同，缺磷胁迫对patatin蛋白（表现PLA2活性）的编码基因PAT-1在转录水平上的表达无影响，TLC分析PG的水解产物也未检测到溶血磷脂酰甘油（LPG）的生成。由此可见，PLA活性可能与缺磷条件下PG的降解无关。

Characterization of nano-composite M-2411/Y-123 thin films by electron backscatter diffraction and in-field critical current measurements

Thin films of nano-composite Y-Ba-Cu-O (YBCO) superconductors containing nano-sized, non-superconducting particles of Y2Ba 4CuMOx (M-2411 with M = Ag and Nb) have been prepared by the PLD technique. Electron backscatter diffraction (EBSD) has been used to analyze the crystallographic orientation of nano-particles embedded in the film microstructure. The superconducting YBa2Cu3O7 (Y-123) phase matrix is textured with a dominant (001) orientation for all samples, whereas the M-2411 phase exhibits a random orientation. Angular critical current measurements at various temperature (T) and applied magnetic field (B) have been performed on thin films containing different concentration of the M-2411 second phase. An increase in critical current density J c at T < 77 K and B < 6 T is observed for samples with low concentration of the second phase (2 mol % M-2411). Films containing 5 mol % Ag-2411 exhibit lower Jc than pure Y-123 thin films at all fields and temperatures. Samples with 5 mol % Nb-2411 show higher Jc(B) than phase pure Y-123 thin films for T < 77 K. © 2010 IOP Publishing Ltd.

Benefits of current percolation in superconducting coated conductors

The critical currents of coated conductors fabricated by metal-organic deposition (MOD) on rolling-assisted biaxially textured substrates (RABiTS) and by pulsed laser deposition (PLD) on ion-beam assisted deposition (IBAD) templates have been measured as a function of magnetic field orientation and compared to films grown on single crystal substrates. By varying the orientation of magnetic field applied in the plane of the film, we are able to determine the extent to which current flow in each type of conductor is percolative. Standard MOD/RABiTS conductors have also been compared to samples whose grain boundaries have been doped by diffusing Ca from an overlayer. We find that undoped MOD/RABiTS tapes have a less anisotropic in-plane field dependence than PLD/IBAD tapes and that the uniformity of critical current as a function of in-plane field angle is greater for MOD/RABiTS samples doped with Ca. (C) 2005 American Institute of Physics.

Active glass-polymer superlattice structure for photonic integration.

We propose an all-laser processing approach allowing controlled growth of organic-inorganic superlattice structures of rare-earth ion doped tellurium-oxide-based glass and optically transparent polydimethyl siloxane (PDMS) polymer; the purpose of which is to illustrate the structural and thermal compatibility of chemically dissimilar materials at the nanometer scale. Superlattice films with interlayer thicknesses as low as 2 nm were grown using pulsed laser deposition (PLD) at low temperatures (100 °C). Planar waveguides were successfully patterned by femtosecond-laser micro-machining for light propagation and efficient Er(3+)-ion amplified spontaneous emission (ASE). The proposed approach to achieve polymer-glass integration will allow the fabrication of efficient and durable polymer optical amplifiers and lossless photonic devices. The all-laser processing approach, discussed further in this paper, permits the growth of films of a multitude of chemically complex and dissimilar materials for a range of optical, thermal, mechanical and biological functions, which otherwise are impossible to integrate via conventional materials processing techniques.

Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition

ZnO thin films were deposited on glass substrates at room temperature (RT) similar to 500 degrees C by pulsed laser deposition (PLD) technique and then were annealed at 150-450 degrees C in air. The effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by XRD, SEM, transmittance spectra, and photoluminescence (PL). The results showed that the c-axis orientation of ZnO thin films was not destroyed by annealing treatments: the grain size increased and stress relaxed for the films deposited at 200-500 degrees C, and thin films densified for the films deposited at RT with increasing annealing temperature. The transmittance spectra indicated that E-g of thin films showed a decreased trend with annealing temperature. From the PL measurements, there was a general trend, that is UV emission enhanced with lower annealing temperature and disappeared at higher annealing temperature for the films deposited at 200-500 degrees C; no UV emission was observed for the films deposited at RT regardless of annealing treatment. Improvement of grain size and stoichiometric ratio with annealing temperature can be attributed to the enhancement of UV emission, but the adsorbed oxygen species on the surface and grain boundary of films are thought to contribute the annihilation of UV emission. It seems that annealing at lower temperature in air is an effective method to improve the UV emission for thin films deposited on glass substrate at substrate temperature above RT.

Oxygen pressure dependences of structure and properties of ZnO films deposited on amorphous glass substrates by pulsed laser deposition

ZnO films are prepared on glass substrates by pulsed laser deposition (PLD) at different oxygen pressures, and the effects of oxygen pressure on the structure and optoelectrical properties of as-grown ZnO films are investigated. The results show that the crystallite size and surface roughness of the films increase, but the carrier concentration and optical energy gap E-g decrease with increasing oxygen pressure. Only UV emission is found in the photoluminescence (PL) spectra of all the samples, and its intensity increases with oxygen pressure. Furthermore, there are marked differences in structure and properties between the films grown at low oxygen pressures (0.003 and 0.2 Pa) and the films grown at high oxygen pressures (24 and 150 Pa), which is confirmed by the fact that the crystallite size and UV emission intensity markedly increase, but the carrier concentration markedly decreases as oxygen pressure increases from 0.2 to 24 Pa. These results show that the crystal quality, including the microstructural quality and stoichiometry proportion, of the prepared ZnO films improves as oxygen pressure increases, particularly from 0.2 to 24 Pa.

The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition

ZnO thin films were prepared by pulsed laser deposition (PLD) on glass substrates with growth temperature from room temperature (RT) to 500 degrees C. The effects of substrate temperature on the structural and optical properties of ZnO films have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission spectra, and RT photoluminescence (PL) measurements. The results showed that crystalline and (0 0 2)-oriented ZnO films were obtained at all substrate temperatures. As the substrate temperature increased from RT to 500 degrees C, the ratio of grain size in height direction to that in the lateral direction gradually decreased. The same grain size in two directions was obtained at 200 degrees C, and the size was smallest in all samples, which may result in maximum E, and E-0 of the films. UV emission was observed only in the films grown at 200 degrees C, which is probably because the stoichiometry of ZnO films was improved at a suitable substrate temperature. It was suggested that the UV emission might be related to the stoichiometry in the ZnO film rather than the grain size of the thin film. (c) 2007 Elsevier Ltd. All rights reserved.

Effect of silver growth temperature on the contacts between Ag and ZnO thin films

Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures, 200 nm silver films as the contact metal were deposited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts between Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150A degrees C and 200A degrees C. Ohmic contacts were formed while the growth temperatures were lower than 150A degrees C or higher than 200A degrees C. After analysis, the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers.