966 resultados para MOBILITY 2-DIMENSIONAL ELECTRON
Resumo:
This paper reports on the numerical study of the linear stability of laminar premixed flames under zero gravity. The study specifically addresses the dependence of stability on finite rate chemistry with low activation energy and variable thermodynamic and transport properties. The calculations show that activation energy and details of chemistry play a minor role in altering the linear neutral stability results from asymptotic analysis. Variable specific heat makes a marginal change to the stability. Variable transport properties on the other hand tend to substantially enhance the stability from critical wave number of about 0.5 to 0.20. Also, it appears that the effects of variable properties tend to nullify the effects of non-unity Lewis number. When the Lewis number of a single species is different from unity, as will happen in a hydrogen-air premixed flame, the stability results remain close to that of unity Lewis number.
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We report experimental observations of a new mechanism of charge transport in two-dimensional electron systems (2DESs) in the presence of strong Coulomb interaction and disorder. We show that at low enough temperature the conductivity tends to zero at a nonzero carrier density, which represents the point of essential singularity in a Berezinskii-Kosterlitz-Thouless-like transition. Our experiments with many 2DESs in GaAs/AlGaAs heterostructures suggest that the charge transport at low carrier densities is due to the melting of an underlying ordered ground state through proliferation of topological defects. Independent measurement of low-frequency conductivity noise supports this scenario.
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Zinc forms two types of complexes with o-vanillin salicyloylhydrazone. The H-1 and C-13 nmr studies suggest that it coordinates with azomethine nitrogen, the carbonyl oxygen and with one or both of the phenolic oxygens. The H-1-H-1 and H-1 decoupled C-13-C-13 two-dimensional nuclear Overhauser and exchange spectra show that there is an exchange between the two types of complexes.
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We investigate the Nernst effect in a mesoscopic two-dimensional electron system (2DES) at low magnetic fields, before the onset of Landau level quantization. The overall magnitude of the Nernst signal agrees well with semiclassical predictions. We observe reproducible mesoscopic fluctuations in the signal that diminish significantly with an increase in temperature. We also show that the Nernst effect exhibits an anomalous component that is correlated with an oscillatory Hall effect. This behavior may be able to distinguish between different spin-correlated states in the 2DES.
Transport through an electrostatically defined quantum dot lattice in a two-dimensional electron gas
Resumo:
Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic, and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling the formation of a periodic QDL. The current-voltage characteristics, I (V), follow a power law, as expected for a QDL. In addition, a systematic study of the scaling behavior of I (V) allows us to probe the effects of background disorder on transport through the QDL. Our results are particularly important for semiconductor-based QDL architectures which aim to probe collective phenomena.
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We use a dual gated device structure to introduce a gate-tuneable periodic potential in a GaAs/AlGaAs two dimensional electron gas (2DEG). Using only a suitable choice of gate voltages we can controllably alter the potential landscape of the bare 2DEG, inducing either a periodic array of antidots or quantum dots. Antidots are artificial scattering centers, and therefore allow for a study of electron dynamics. In particular, we show that the thermovoltage of an antidot lattice is particularly sensitive to the relative positions of the Fermi level and the antidot potential. A quantum dot lattice, on the other hand, provides the opportunity to study correlated electron physics. We find that its current-voltage characteristics display a voltage threshold, as well as a power law scaling, indicative of collective Coulomb blockade in a disordered background.
Resumo:
We report experimental evidence of a remarkable spontaneous time-reversal symmetry breaking in two-dimensional electron systems formed by atomically confined doping of phosphorus (P) atoms inside bulk crystalline silicon (Si) and germanium (Ge). Weak localization corrections to the conductivity and the universal conductance fluctuations were both found to decrease rapidly with decreasing doping in the Si: P and Ge: P delta layers, suggesting an effect driven by Coulomb interactions. In-plane magnetotransport measurements indicate the presence of intrinsic local spin fluctuations at low doping, providing a microscopic mechanism for spontaneous lifting of the time-reversal symmetry. Our experiments suggest the emergence of a new many-body quantum state when two-dimensional electrons are confined to narrow half-filled impurity bands.
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Structural variations of different Z pi-aromatic three-membered ring systems of main group elements, especially group 14 and 13 elements as compared to the classical description of cyclopropenyl cation has been reviewed in this article. The structures of heavier analogues as well as group 13 analogues of cyclopropenyl cation showed an emergence of dramatic structural patterns which do not conform, to the general norms of carbon chemistry. Isolobal analogies between the main group fragments have been efficiently used to explain the peculiarities observed in these three-membered ring systems.
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We report the magnetic-field-dependent shift of the electron chemical potential in bulk, n-type GaAs at room temperature. A transient voltage of similar to 100 mu V was measured across a Au-Al2O3-GaAs metal-oxide-semiconductor capacitor in a pulsed magnetic field of similar to 6 T. Several spurious voltages larger than the signal that had plagued earlier researchers performing similar experiments were carefully eliminated. The itinerant magnetic susceptibility of GaAs is extracted from the experimentally measured data for four different doping densities, including one as low as 5 x 10(15) cm(-3). Though the susceptibility in GaAs is dominated by Landau-Peierls diamagnetism, the experimental technique demonstrated can be a powerful tool for extracting the total free carrier magnetization of any electron system. The method is also virtually independent of the carrier concentration and is expected to work better in the nondegenerate limit. Such experiments had been successfully performed in two-dimensional electron gases at cryogenic temperatures. However, an unambiguous report on having observed this effect in any three-dimensional electron gas has been lacking. We highlight the 50 year old literature of various trials and discuss the key details of our experiment that were essential for its success. The technique can be used to unambiguously yield only the itinerant part of the magnetic susceptibility of complex materials such as magnetic semiconductors and hexaborides, and thus shed light on the origin of ferromagnetism in such systems.
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On the basis of previous works, the strange attractor in real physical systems is discussed. Louwerier attractor is used as an example to illustrate the geometric structure and dynamical properties of strange attractor. Then the strange attractor of a kind of two-dimensional map is analysed. Based on some conditions, it is proved that the closure of the unstable manifolds of hyberbolic fixed point of map is a strange attractor in real physical systems.
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We have theoretically investigated ballistic electron transport through a combination of magnetic-electric barrier based on a vertical ferromagnet/two-dimensional electron gas/ferromagnet sandwich structure, which can be experimentally realized by depositing asymmetric metallic magnetic stripes both on top and bottom of modulation-doped semiconductor heterostructures. Our numerical results have confirmed the existence of finite spin polarization even though only antisymmetric stray field B-z is considered. By switching the relative magnetization of ferromagnetic layers, the device in discussion shows evident magnetoconductance. In particular, both spin polarization and magnetoconductance can be efficiently enhanced by proper electrostatic barrier up to the optimal value relying on the specific magnetic-electric modulation. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3041477]