Evidence of gate-tunable topological excitations in two-dimensional electron systems


Autoria(s): Koushik, R; Baenninger, Matthias; Narayan, Vijay; Mukerjee, Subroto; Pepper, Michael; Farrer, Ian; Ritchie, David A; Ghosh, Arindam
Data(s)

14/02/2011

Resumo

We report experimental observations of a new mechanism of charge transport in two-dimensional electron systems (2DESs) in the presence of strong Coulomb interaction and disorder. We show that at low enough temperature the conductivity tends to zero at a nonzero carrier density, which represents the point of essential singularity in a Berezinskii-Kosterlitz-Thouless-like transition. Our experiments with many 2DESs in GaAs/AlGaAs heterostructures suggest that the charge transport at low carrier densities is due to the melting of an underlying ordered ground state through proliferation of topological defects. Independent measurement of low-frequency conductivity noise supports this scenario.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/35882/1/Topological.pdf

Koushik, R and Baenninger, Matthias and Narayan, Vijay and Mukerjee, Subroto and Pepper, Michael and Farrer, Ian and Ritchie, David A and Ghosh, Arindam (2011) Evidence of gate-tunable topological excitations in two-dimensional electron systems. In: Physical Review B: Condensed Matter and Materials Physics, 83 (8).

Publicador

The American Physical Society

Relação

http://prb.aps.org/abstract/PRB/v83/i8/e085302

http://eprints.iisc.ernet.in/35882/

Palavras-Chave #Physics
Tipo

Journal Article

PeerReviewed