An object-orient designed FDTD simulator: Applications to high field systems

An object-oriented finite-difference time-domain (FDTD) simulator has been developed for electromagnetic study and design applications in Magnetic Resonance Imaging. It is aimed to be a complete FDTD model of an MRI system including all high and low-frequency field generating units and electrical models of the patient. The design method is described and MRI-based numerical examples are presented to illustrate the function of the numerical solver, particular emphasis is placed on high field studies.

Ambipolar organic field-effect transistors with air stability, high mobility, and balanced transport

Ambipolar organic field-effect transistors (OFETs) based on the organic heterojunction of copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were fabricated. The ambipolar OFETs eliminated the injection barrier for the electrons and holes though symmetrical Au source and drain electrodes were used, and exhibited air stability and balanced ambipolar transport behavior. High field-effect mobilities of 0.04 cm(2)/V s for the holes and 0.036 cm(2)/V s for the electrons were obtained. The capacitance-voltage characteristic of metal-oxide-semiconductor (MOS) diode confirmed that electrons and holes are transported at F16CuPc and BP2T layers, respectively. On this ground, complementary MOS-like inverters comprising two identical ambipolar OFETs were constructed.

An inverse methodology for high frequency RF head coil design with pre-emphasized B1 field in MRI

An inverse methodology to assist in the design of radio-frequency (RF) head coils for high field MRI application is described in this work. Free space time-harmonic electromagnetic Green's functions and preemphasized B1 field are used to calculate the current density on the coil cylinder. With B1 field preemphasized and lowered in the middle of the RF transverse plane, the calculated current distribution can generate an internal magnetic field that can reduce the EM field/tissue interactions at high frequencies. The current distribution of a head coil operating at 4 T is calculated using inverse methodology with preemphasized B1 fields. FDTD is employed to calculate B1 field and signal intensity inside a homogenous cylindrical phantom and human head. A comparison with conventional RF birdcage coil is reported here and demonstrated that inverse-method designed coil with preemphasized B1 field can help in decreasing the notorious bright region caused by EM field/tissue interactions in the human head images at 4 T.

Field-dependent changeover from current-to voltage-limiting characteristics by non-linear n-type BaTiO3 ceramics

Non-linear resistors having current-limiting capabilities at lower field strengths, and voltage-limiting characteristics (varistors) at higher field strengths, were prepared from sintered polycrystalline ceramics of (Ba0.6Sr0.4)(Ti0.97Zr0.03)O3+0.3 at % La, and reannealed after painting with low-melting mixtures of Bi2O3 + PbO +B2O3. These types of non-linear characteristics were found to depend upon the non-uniform diffusion of lead and the consequent distribution of Curie points (T c) in these perovskites, resulting in diffuse phase transitions. Tunnelling of electrons across the asymmetric barrier at tetragonak-cubic interfaces changes to tunnelling across the symmetric barrier as the cubic phase is fully stabilized through Joule heating at high field strengths. Therefore the current-limiting characteristics switch over to voltage-limiting behaviour because tunnelling to acceptor-type mid-bandgap states gives way to band-to-band tunnelling.

Theoretical simulation studies of pulsed field magnetisation of (RE)BCO bulk superconductors

The magnetisation of bulk high temperature superconductors (HTS), such as RE-Ba-Cu-O [(RE)BCO, where RE is a rare earth element or Y], by a practical technique is essential for their application in high field, permanent magnet-like devices. Research to-date into the pulsed field magnetisation (PFM) of these materials, however, has been limited generally to experimental techniques, with relatively little progress in the development of theoretical models. This is because not only is a multi-physics approach needed to take account of the heating of the samples but also the high electric fields generated are well above the regime in which there are reliable experimental results. This paper describes a framework of theoretical simulation using the finite element method (FEM) that is applicable to both single- and multi-pulse magnetisation processes of (RE)BCO bulk superconductors. The model incorporates the heat equation and provides a convenient way of determining the distribution of trapped field, current density and temperature change within a bulk superconductor at each stage of the magnetisation process. An example of the single-pulse magnetisation of a (RE)BCO bulk is described. Potentially, the model may serve as a cost-effective tool for the optimisation of the bulk geometry and the magnetisation profile in multi-pulse magnetisation processes. © 2010 IOP Publishing Ltd.

Effects of Lorentz local field correction on propagation properties of few-cycle pulse in dense Λ-type atomic medium

By solving numerically the full Maxwell-Bloch equations without the slowly varying envelope approximation and the rotating-wave approximation, we investigate the effects of Lorentz local field correction (LFC) on the propagation properties of few-cycle laser pulse in a dense A-type three-level atomic medium. We find that: when the area of the input pulse is larger, split of pulse occurs and the number of the sub-pulses with LFC is larger than that without LFC; at the same distance, the time interval between the first sub-pulse and the second sub-pulse in the case without LFC is longer than that with LFC, the time of pulse appearing in the case without LFC is later than that in the case with LFC, and the two phenomena are more obvious with propagation distance increasing; time evolution rules of the populations of levels vertical bar 1 >, vertical bar 2 > and vertical bar 3 > in the two cases with and without LFC are much different. When the area of the input pulse is smaller, effects of LFC on time evolutions of the pulse and populations are remarkably smaller than those in the case of larger area pulse. (c) 2008 Elsevier B.V. All rights reserved.

How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD?

CMOS nanocrystalline silicon thin film transistors with high field effect mobility are reported. The transistors were directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150°C The transistors show maximum field effect mobility of 450 cm2/V-s for electrons and 100 cm2/V-s for holes at room temperature. We attribute the high mobilities to a reduction of the oxygen content, which acts as an accidental donor. Indeed, secondary ion mass spectrometry measurements show that the impurity concentration in the nanocrystalline Si layer is comparable to, or lower than, the defect density in the material, which is already low thanks to hydrogen passivation.

The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates

Si-doped nonpolar a-plane GaN films were grown on nanopatterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) system. The structure, morphology and field emission properties of the sample were studied by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and field emission measurement. The XRD analysis shows that the sample is a nonpolar a-plane (11 (2) over bar0) GaN film. The field emission measurement shows that the nonpolar GaN films exhibit excellent field emission properties with a threshold emission field of as low as 10 V/mu m at a current density of 0.63 mu A/cm(2), and a high field emission current density of 74 mA/cm(2) at an applied field of 24 V/mu m. Moreover, the Fowler-Nordheirn plot of the sample fits a near linear relation. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Formation mechanism of electric field domains

Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field domains in doped weakly-coupled GaAs/AlAs superlattices. For the first plateau-like region in the I-V curve, two kinds of sequential resonant tunnelling are observed. For P<2 kbar the high-field domain is formed by the Gamma-Gamma process, while for P>2 kbar the high-field domain is formed by the T-X process. For the second plateau-libe region, the high-field domain is attributed to Gamma-X sequential resonant tunnelling. (C) 1998 Elsevier Science B.V. All rights reserved.

NEW FORMATION MECHANISM OF ELECTRIC-FIELD DOMAIN DUE TO GAMMA-X SEQUENTIAL TUNNELING IN GAAS/ALAS SUPERLATTICES

We have studied the sequential tunneling of doped weakly coupled GaAs/ALAs superlattices (SLs), whose ground state of the X valley in AlAS layers is designed to be located between the ground state (E(GAMMA1)) and the first excited state (E(GAMMA2)) of the GAMMA valley in GaAs wells. The experimental results demonstrate that the high electric field domain in these SLs is attributed to the GAMMA-X sequential tunneling instead of the usual sequential resonant tunneling between subbands in adjacent wells. Within this kind of high field domain, electrons from the ground state in the GaAs well tunnel to the ground state of the X valley in the nearest AlAs layer, then through very rapid real-space transfer relax from the X valley in the AlAs layer to the ground state of the GAMMA valley of the next GaAs well.

Formation mechanism of electric field domains

Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field domains in doped weakly-coupled GaAs/AlAs superlattices. For the first plateau-like region in the I-V curve, two kinds of sequential resonant tunnelling are observed. For P<2 kbar the high-field domain is formed by the Gamma-Gamma process, while for P>2 kbar the high-field domain is formed by the T-X process. For the second plateau-libe region, the high-field domain is attributed to Gamma-X sequential resonant tunnelling. (C) 1998 Elsevier Science B.V. All rights reserved.

Bilayer Photoresist Insulator for High Performance Organic Thin-Film Transistors on Plastic Films

A novel bilayer photoresist insulator is applied in flexible vanadyl-phthalocyanine (VOPc) organic thin-film transistors (OTFTs). The micron-size patterns of this photoresisit insulator can be directly defined only by photolithography without the etching process. Furthermore, these OTFTs exhibit high field-effect mobility (about 0.8 cm(2)/Vs) and current on/off ratio (about 10(6)). In particular, they show rather low hysteresis (< 1 V). The results demonstrate that this bilayer photoresist insulator can be applied in large-area electronics and in the facilitation of patterning insulators.