A New Threshold Voltage Model for Omega Gate Cylindrical Nanowire Transistor

In this work, for the first time, we present a physically based analytical threshold voltage model for omega gate silicon nanowire transistor. This model is developed for long channel cylindrical body structure. The potential distribution at each and every point of the of the wire is derived with a closed form solution of two dimensional Poisson's equation, which is then used to model the threshold voltage. Proposed model can be treated as a generalized model, which is valid for both surround gate and semi-surround gate cylindrical transistors. The accuracy of proposed model is verified for different device geometry against the results obtained from three dimensional numerical device simulators and close agreement is observed.

Long-term Accelerated Multistress Aging of Composite Outdoor Polymeric Insulators

Polymeric outdoor insulators are being increasingly used for electrical power transmission and distribution in the recent years. One of the current topics of interest for the power transmission community is the aging of such outdoor polymeric insulators. A few research groups are carrying out aging studies at room temperature with wet period as an integral part of multistress aging cycle as specified by IEC standards. However, aging effect due to dry conditions alone at elevated temperatures and electric stress in the presence of radiation environment has probably not been explored. It is interesting to study and understand the insulator performance under dry conditions where wet periods are either rare or absent and to estimate the extent of aging caused by multiple stresses. This paper deals with the long-term accelerated multistress aging on full-scale 11 kV distribution class composite silicone rubber insulators. In order to assess the long-term synergistic effect of electric stress, temperature and UV radiation on insulators, they are subjected to accelerated aging in a specially designed multistress-aging chamber for 3800 hours. All the stresses are applied at an accelerated level. Using a data acquisition system developed for the work, leakage current has been monitored in LabVIEW environment. Chemical changes due to degradations have been studied using Energy Dispersive X-Ray analysis, Scanning Electron Microscope and Fourier transform Infrared Spectroscopy. Periodically different parameters like low molecular weight (LMW) molecular content, hydrophobicity, leakage current and surface morphology were monitored. The aging study is under progress and only intermediate results are presented in this paper.

Field Reduction Electrodes for the Possible Improvement in the Pollution Flashover Performance of Porcelain Insulators

In this paper an attempt is made to study accurately, the field distribution for various types of porcelain/ceramic insulators used forhigh voltage transmission. The surface charge Simulation method is employed for the field computation. Novel field reduction electrodes are developed to reduce the maximum field around the pin region. In order to experimentally scrutinize the performance of discs with field reduction electrodes, special artificial pollution test facility was built and utilized. The experimental results show better improvement in the pollution flashover performance of string insulators.

A Computationally Efficient Generalized Poisson Solution for Independent Double-Gate Transistors

Previous techniques used for solving the 1-D Poisson equation ( PE) rigorously for long-channel asymmetric and independent double-gate (IDG) transistors result in potential models that involve multiple intercoupled implicit equations. As these equations need to be solved self-consistently, such potential models are clearly inefficient for compact modeling. This paper reports a different rigorous technique for solving the same PE by which one can obtain the potential profile of a generalized IDG transistor that involves a single implicit equation. The proposed Poisson solution is shown to be computationally more efficient for circuit simulation than the previous solutions.

Phonon-mediated two-magnon light scattering from ferromagnetic insulators

An indirect mechanism of light scattering from spin-waves in ferromagnetic insulators via two-magnon one-phonon process is proposed. Following linear response theory, an expression has been derived for the differential scattering cross-section in the mean-field-approximation.

Coherence factors in excitonic insulators

Results of a theoretical study on ultrasonic attenuation and NMR relaxation in excitonic insulators are reported. The transition rates derived have anomalous temperature dependence owing to the occurrence of coherence factors analogous to the case of superconductors. It is found that these coherence factors are characteristically different for the interband and the intraband scattering processes. It is suggested that experimental observation of these temperature-dependent coherence factors may help identify the existence of an excitonic phase.

A Compact Model incorporating Quantum Effects for Ultra-Thin-Body Double-Gate MOSFETs

We propose a compact model which predicts the channel charge density and the drain current which match quite closely with the numerical solution obtained from the Full-Band structure approach. We show that, with this compact model, the channel charge density can be predicted by taking the capacitance based on the physical oxide thickness, as opposed to C-eff, which needs to be taken when using the classical solution.

Effect of a linear potential variation on the gate of an FET

This correspondence aims at reporting the results of an analysis carried out to find the effect of a linear potential variation on the gate of an FET.

Electric Field Modelling of Composite High Voltage Insulators

This paper deals with the two-dimensional electric field modelling and electric field stress calculations of different types of composite insulators used in high voltage distribution and transmission systems. The computer simulations are carried out by using a commercially available software package. The potential and electric filed results obtained for the actual insulator profiles for three types of composite/polymeric insulators are discussed and presented.

Analytical modeling of quantum threshold voltage for triple gate MOSFET

In this work a physically based analytical quantum threshold voltage model for the triple gate long channel metal oxide semiconductor field effect transistor is developed The proposed model is based on the analytical solution of two-dimensional Poisson and two-dimensional Schrodinger equation Proposed model is extended for short channel devices by including semi-empirical correction The impact of effective mass variation with film thicknesses is also discussed using the proposed model All models are fully validated against the professional numerical device simulator for a wide range of device geometries (C) 2010 Elsevier Ltd All rights reserved

Single‐gate deep level transient spectroscopy technique

A new deep level transient spectroscopy technique is suggested which allows the deep level parameters to be obtained from a single temperature scan. Using large ratio t2/t1 of the measurement gate positions t1 and t2 and analyzing the steep high‐temperature side of the peak, it is demonstrated that the deep level activation energy can be determined with high accuracy.

Enhancement of Surface Flashover Performance of High Voltage Ceramic Disc Insulators

In this paper, an effort is made to study accurately the field distribution for various types of ceramic insulators used for high-voltage transmission. The surface charge simulation method (SCSM) is employed for the field computation. With the help of SCSM program, a Novel field reduction electrode is designed and developed to reduce the maximum field around the pin region. In order to experimentally analyze the performance of discs with field reduction electrode, special artificial pollution test facility was built and utilized. The experimental results show better surface flashover performance of ceramic insulators used in high-voltage transmission and distribution systems.

Evidence of gate-tunable topological excitations in two-dimensional electron systems

We report experimental observations of a new mechanism of charge transport in two-dimensional electron systems (2DESs) in the presence of strong Coulomb interaction and disorder. We show that at low enough temperature the conductivity tends to zero at a nonzero carrier density, which represents the point of essential singularity in a Berezinskii-Kosterlitz-Thouless-like transition. Our experiments with many 2DESs in GaAs/AlGaAs heterostructures suggest that the charge transport at low carrier densities is due to the melting of an underlying ordered ground state through proliferation of topological defects. Independent measurement of low-frequency conductivity noise supports this scenario.

Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor

In this paper, a physically based analytical quantum linear threshold voltage model for short channel quad gate MOSFETs is developed. The proposed model, which is suitable for circuit simulation, is based on the analytical solution of 3-D Poisson and 2-D Schrodinger equation. Proposed model is fully validated against the professional numerical device simulator for a wide range of device geometries and also used to analyze the effect of geometry variation on the threshold voltage.

Investigations on the Corona performance of a Ceramic disc Insulators integrated with Field Reduction Electrode

This paper presents laboratory investigations on the visible corona and discharge radio noise. Experimental investigations are carried on various types of normal and anti-fog types of ceramic disc insulator at the recently established artificial pollution experimental facility. The results obtained from the experimental investigations show better performance for the disc insulators fitted with field reduction electrodes. In addition to the corona and radio noise investigations the comparisons are also made for the experimental results of the potential distribution across the insulator string (with and without filed reduction electrode) with the simulation results obtained by using Surface Charge Simulation Method.