Effect of a linear potential variation on the gate of an FET


Autoria(s): Vishwanatha, KV; Satyam, M
Data(s)

1979

Resumo

This correspondence aims at reporting the results of an analysis carried out to find the effect of a linear potential variation on the gate of an FET.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/33296/1/Gate.pdf

Vishwanatha, KV and Satyam, M (1979) Effect of a linear potential variation on the gate of an FET. In: IEEE Transactions on Electron Devices, 26 (7). pp. 1102-1103.

Publicador

IEEE

Relação

http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1480132&sourceID=ISI&tag=1

http://eprints.iisc.ernet.in/33296/

Palavras-Chave #Electrical Communication Engineering
Tipo

Editorials/Short Communications

PeerReviewed