Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance

Self-assembled InAs quantum dots (QDs) have been fabricated by depositing 1.6, 1.8, 2.0 and 2.5 monolayer (ML) InAs on surfaces of the undoped-n(+) (UN+) type GaAs structure. Room temperature contactless electroreflectance (CER) was employed to study the built-in electric field and the surface Fermi level pinning of these QD-covered UN+ GaAs samples. The CER results show that 1.6 ML InAs QDs on GaAs do not modify the Fermi level, whereas for samples with more than 1.6 ML InAs coverage, the surface Fermi level is moved to the valence band maximum of GaAs by about 70 meV (which is independent of the InAs deposition thickness) compared to bare GaAs. It is concluded that the modification of InAs coverage on the Fermi level on the GaAs surface is due to the QDs, rather than to the wetting layer. (C) 2003 American Institute of Physics.

Effect of arsenic precipitates on Fermi level in GaAs grown by molecular-beam epitaxy at low temperature

A simple model is presented to discuss the effect of As precipitates on the Fermi level in GaAs grown by molecular-beam epitaxy at low temperature (LT-GaAs). This model implements the compensation between point defects and the depletion of arsenic precipitates. The condition that the Fermi level is pinned by As precipitates is attained. The shifts of the Fermi level in LT-GaAs with annealing temperature are explained by our model. Additionally, the role of As precipitates in conventional semi-insulating GaAs is discussed. (C) 2000 American Institute of Physics. [S0021-8979(00)09905-9].

Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure

In this letter, we report on the observation of Fermi-edge singularity in a modulation-doped AlGaN/GaN heterostructure grown on a c-face sapphire substrate by NH3 source molecular beam epitaxy. The two-dimensional electron gas (2DEG) characteristic of the structure is manifested by variable temperature Hall effect measurements down to 7 K. Low-temperature photoluminescence (PL) spectra show a broad emission band originating from the recombination of the 2DEG and localized holes. The enhancement in PL intensity in the high-energy side approaching Fermi level was observed at temperatures below 20 K. At higher temperatures, the enhancement disappears because of the thermal broadening of the Fermi edge. (C) 1998 American Institute of Physics. [S0003-6951(98)02543-1].

Temperature dependence of the Fermi level in low-temperature-grown GaAs

A variable-temperature reflectance difference spectroscopy study of GaAs grown by molecular beam epitaxy at low-temperature GaAs (LT-GaAs) shows that the Fermi level is mostly determined by the point defects in samples annealed at below 600 degrees C and can be shifted by photoquenching the defects. The Fermi level is otherwise almost temperature independent, leading to an estimated width of the defect band of 150 meV in the as-grown sample, For LT-GaAs annealed at 850 degrees C, the Fermi level is firmly pinned, most Likely by the As precipitates. (C) 1998 American Institute of Physics.

Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs

The results of a reflectance-difference spectroscopy study of GaAs grown on (100) GaAs substrates by low-temperature molecular-beam epitaxy (LT-GaAs) are presented. In-plane optical anisotropy resonances which come from the linear electro-optic effect produced by the surface electric field are observed. The RDS line shape of the resonances clearly shows that the depletion region of LT-GaAs is indeed extremely narrow (much less than 200 Angstrom). The surface potential is obtained from the RDS resonance amplitude without the knowledge of space-charge density. The change of the surface potential with post-growth annealing temperatures reflects a complicated movement of the Fermi level in LT-GaAs. The Fermi level still moves for samples annealed at above 600 degrees C, instead of being pinned to the As precipitates. This behavior can be explained by the dynamic properties of defects in the annealing process.

Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Perot Semiconductor Lasers

A fitting process is used to measure the cavity loss and the quasi-Fermi-level separation for Fabry- Perot semiconductor lasers. From the amplified spontaneous emission (ASE) spectrum, the gain spectrum and single-pass ASE obtained by the Cassidy method are applied in the fitting process. For a 1550nm quantum well InGaAsP ridge waveguide laser, the cavity loss of about ～24cm~(-1) is obtained.

Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate

The Fermi-level pinning (FLP) at the metal/high-k interface and its dependence on the electron state density of the metal gate are investigated. It is found that the FLP is largely determined by the distortion of the vacuum level of the metal which is quantitatively ruled by the electron state density of the metal. The physical origin of the vacuum level distortion of the metal is attributed to an image charge of the interface charge in the metal. Such results indicate that the effective work function of the metal/high-k stack is also governed by the electron state density of the metal.

Isobaric yield ratios and the symmetry energy in heavy-ion reactions near the Fermi energy

The relative isobaric yields of fragments produced in a series of heavy-ion-induced multifragmentation reactions have been analyzed in the framework of a modified Fisher model, primarily to determine the ratio of the symmetry energy coefficient to the temperature, a(sym)/T, as a function of fragment mass A. The extracted values increase from 5 to similar to 16 as A increases from 9 to 37. These values have been compared to the results of calculations using the antisymmetrized molecular dynamics (AMD) model together with the statistical decay code GEMINI. The calculated ratios are in good agreement with those extracted from the experiment. In contrast, the values extracted from the ratios of the primary isobars from the AMD model calculation are similar to 4 to 5 and show little variation with A. This observation indicates that the value of the symmetry energy coefficient derived from final fragment observables may be significantly different than the actual value at the time of fragment formation. The experimentally observed pairing effect is also studied within the same simulations. The Coulomb coefficient is also discussed.

Universal quantum viscosity in a unitary Fermi gas.

A Fermi gas of atoms with resonant interactions is predicted to obey universal hydrodynamics, in which the shear viscosity and other transport coefficients are universal functions of the density and temperature. At low temperatures, the viscosity has a universal quantum scale ħ n, where n is the density and ħ is Planck's constant h divided by 2π, whereas at high temperatures the natural scale is p(T)(3)/ħ(2), where p(T) is the thermal momentum. We used breathing mode damping to measure the shear viscosity at low temperature. At high temperature T, we used anisotropic expansion of the cloud to find the viscosity, which exhibits precise T(3/2) scaling. In both experiments, universal hydrodynamic equations including friction and heating were used to extract the viscosity. We estimate the ratio of the shear viscosity to the entropy density and compare it with that of a perfect fluid.

Fully nonlinear ion-sound waves in a dense Fermi magnetoplasma

The nonlinear propagation of ion-sound waves in a collisionless dense electron-ion magnetoplasma is investigated. The inertialess electrons are assumed to follow a non-Boltzmann distribution due to the pressure for the Fermi plasma and the ions are described by the hydrodynamic (HD) equations. An energy balance-like equation involving a new Sagdeev-type pseudo-potential is derived in the presence of the quantum statistical effects. Numerical calculations reveal that the profiles of the Sagdeev-like potential and the ion-sound density excitations are significantly affected by the wave direction cosine and the Mach number. The present studies might be helpful to understand the excitation of nonlinear ion-sound waves in dense plasmas such as those in superdense white dwarfs and neutron stars as well as in intense laser-solid density plasma experiments.