Dynamics and local structure of colossal magnetoresistance manganites

We report Extended X-ray Absorption Fine Structure and anelastic spectroscopy measurements on on hole doped manganese oxides La1-xCaxMnO3 which present the colossal magnetoresistance effect. EXAFS measurements were realized both in the absence and presence of an applied magnetic field of 1.1 Tesla, in a wide temperature range (between 330 and 77 K) and at various dopings (x = 0.25 and x = 0.33). The magnetic field orders the magnetic moments so favouring the electron mobility and the reduction of Mn-O octahedra distortions. We observe the presence of four short and two long Mn-O distances (1.93 and 2.05 Angstrom respectively) above and also below the metal-insulator phase transition. The overall distortion decreases but does not completely disappear in the metallic phase suggesting the possible coexistence of metallic and insulating regions at low temperatures. The magnetic field reduces the lattice distortions showing evidence of a microscopic counterpart of the macroscopic colossal magnetoresistance. We also present preliminary anelastic relaxation spectra in a wide temperature range from 900 K to 1 K on a sample with x = 0.40, in order to study the structural phase transitions and the lattice dynamics. A double peak has been observed at the metal-insulator transition in the imaginary part of Young's modulus. This double peak indicates that the metal-insulator transition could be a more complex phenomenon than a simple second order phase transition. In particular the peak at lower temperatures can be connected with the possible presence of inhomogeneous phase structures. Another intense dissipation peak has been observed corresponding to the structural orthorhombic-trigonal transition around 750 K.

A rectangular laminated anisotropic shallow thin shell finite element

This report contains the details of the development of the stiffness matrix for a rectangular laminated anisotropic shallow thin shell finite element. The derivation is done under linear thin shell assumptions. Expressing the assumed displacement state over the middle surface of the shell as products of one-dimensional first-order Hermite interpolation polynomials, it is possible to insure that the displacement state for the assembled set of such elements, to be geometrically admissible. Monotonic convergence of the total potential energy is therefore possible as the modelling is successively refined. The element is systematically evaluated for its performance considering various examples for which analytical or other solutions are available

Anisotropic properties of the layered semiconductor in Te

Anisotropic properties of the Bridgman grown layered semiconductor p-InTe were studied by analyzing the temperature dependence of electrical conductivity and Hall mobility parallel and perpendicular to the layer planes. The mobilities were μamalgamation or coproduct = 50–60 cm2V−1 sec−1 and μperpendicular = 10–15 cm2V−1sec−1 and varied as μ ≈ Tn where n = 1.43 due to impurity scattering. Pressure-induced semiconductor-metal transition occurred at about 50 kbar. The pressure coefficient of resistance was 3 times larger in the direction perpendicular to the layer plane due to the difference between inter and intra-planar bonding.

Stress and strength analysis of pin joints in laminated anisotropic plates

Mechanical joints in composites can be tailored to achieve improved performance and better life by appropriately selecting the laminate parameters. In order to gain the best advantage of this possibility of tailoring the laminate, it is necessary to understand the influence of laminate parameters on the behaviour of joints in composites. Most of the earlier studies in this direction were based on simplified assumptions regarding load transfer at the pin-plate interface and such studies were only carried out on orthotropic and quasi-isotropic laminates. In the present study, a more rigorous analysis is carried out to study pin joints in laminates with anisotropic properties. Two types of laminates with (0/ + ?4/90)s and (0/ ± ?2/90)s layups made out of graphite epoxy T300/5208 material system are considered. The analysis mainly concentrates on clearance fit in which the pin is of smaller diameter compared to the hole. The main aspect of the analysis of pin joints is the changing contact between the pin and the plate with increasing load levels. The analysis is carried out by an iterative finite element technique and a computationally efficient routine is developed for this purpose. Numerical studies indicate that the location and magnitude of the peak stresses along the hole boundary are functions of fibre angle and the overall anisotropic properties. It is also shown that the conventional assumption of cosine distribution for the contact pressure between pin and the plate in the analysis lead to underestimation of bearing failure load and overestimation of shear and tensile failure loads in typical (0/905)s cross-ply laminates.

Magnetoresistance of FexNi80-xCr20 (50

The authors have measured longitudinal and transverse magnetoresistance (MR) of crystalline pseudo-binary alloys FexNi80-xCr20 (50magnetoresistances for gamma -phase and alpha -phase Fe alloys when they lie close to the critical composition. The experiments were conducted at 4.2 K with magnetic fields up to 7 T. The authors observed that all the alloys show negative magnetoresistance at 4.2 K in fields up to 7 T. However, for the gamma -phase alloys the typical maximum MR ( Delta rho / rho ) is about 1%, while for the alpha -phase alloy it is 10%. In the gamma -phase alloys there is a small but finite anisotropy of MR in the phases with long-range magnetic order which gradually vanishes near the critical region (x=xc approximately=59-63) when it becomes a spin glass. In the range x approximately=xc, Delta rho / rho varies as Mn (M=magnetization) with n approximately=2.

Large negative magnetoresistance and metal-insulator transition observed in MnO/C composite coatings grown on ceramic alumina by metalorganic chemical vapor deposition

MnO/C composite coatings were grown by the metalorganic chemical vapor deposition process on ceramic alumina in argon ambient. Characterization by various techniques confirms that these coatings are homogeneous composites comprising nanometer-sized MnO particles embedded in a matrix of nanometer-sized graphite. Components of the MnO/C composite coating crystalline disordered, but are electrically quite conductive. Resistance vs. temperature measurements show that coating resistance increases exponentially from a few hundred ohms at room temperature to a few megaohms at 30 K. Logarithmic plots of reduced activation energy vs. temperature show that the coating material undergoes a metal-insulator transition. The reduced activation energy exponent for the film under zero magnetic field was 2.1, which is unusually high, implying that conduction is suppressed at much faster rate than the Mott or the Efros-Shklovskii hopping mechanism. Magnetoconductance us. magnetic field plots obtained at various temperatures show a high magnetoconductance (similar to 28.8%) at 100 K, which is unusually large for a disordered system, wherein magnetoresistance is attributed typically to weak localization. A plausible explanation for the unusual behavior observed in the carbonaceous disordered composite material is proposed. (C) 2010 Elsevier Ltd. All rights reserved.

Ferromagnetic La0.6Pb0.4MnO3 thin films with giant magnetoresistance at 300 K

Highly textured, as-deposited La0.6Pb0.4MnO3 thin films have been grown on LaAlO3 by pulsed laser deposition. The films are ferromagnetic metals below 300 K. Giant negative magnetoresistance of over 40% is observed at 300 K at 6 T.

Giant magnetoresistance in lanthanum strontium yttrium manganese oxides (La(1-x)Sr(x-z)YuMnO(3))

Electron transport and magnetic properties of several compositions of the La1-xSx-zYzMnO3 system have been investigated in order to explore the effect of yttrium substitution on the magnetoresistance and related properties of these manganates. Yttrium substitution lowers the T-c and the insulator-metal transition temperature, while increasing the peak resistivity. A comparison of the properties of La1-xSrx-zYzMnO3 with the corresponding La1-xCax-zYzMnO3 compositions shows that the observed properties can be related to the average size of the A-site cations.

Giant magnetoresistance in transition metal oxides

Some materials exhibit large changes in electrical resistance in the presence of a magnetic field, and this change can be used in applications from sensor technology to magnetic data storage. In their Perspective, Rao and Cheetham discuss magnetoresistance in perovskite manganates, where the effect is unusually strong. Much has been learned about these materials, and this understanding is driving the search for new materials with even more impressive properties.

Giant magnetoresistance phenomenon in manganates

The discovery of giant magnetoresistance (GMR) in rare earth manganates of the general formula Ln(1-x)A(x)MnO(3) (Ln = rare earth, A = divalent cation) has aroused much interest not only because of its technological implications, but also due to the fascinating features and mechanism of the phenomemon in these oxides. GMR is observed in these manganates when they become ferromagnetic and transform from an insulating state to a metallic state close to the Curie temperature. The essential features of magnetoresistance in the manganates can be understood on the basis of the double-exchange mechanism, but this is too simplistic to account for all the observed data. The most curious property of the manganates relates to the high resistivity exhibited in the so-called metallic state. Charge ordering competes with the double-exchange interaction responsible for ferromagnetism and GMR in these materials. The charge-ordered (charge-crystal) insulating state in the rare earth manganates can be melted into a metallic and ferromagnetic charge-liquid state by applying a magnetic field, thus providing a unique case of charge and spin separation in solids. The observation of GMR in Tl2Mn2O7 shows that there can be causes other than double-exchange for the phenomenon.

Coherent-mode decomposition of general anisotropic Gaussian Schell-model beams

We present a complete solution to the problem of coherent-mode decomposition of the most general anisotropic Gaussian Schell-model (AGSM) beams, which constitute a ten-parameter family. Our approach is based on symmetry considerations. Concepts and techniques familiar from the context of quantum mechanics in the two-dimensional plane are used to exploit the Sp(4, R) dynamical symmetry underlying the AGSM problem. We take advantage of the fact that the symplectic group of first-order optical system acts unitarily through the metaplectic operators on the Hilbert space of wave amplitudes over the transverse plane, and, using the Iwasawa decomposition for the metaplectic operator and the classic theorem of Williamson on the normal forms of positive definite symmetric matrices under linear canonical transformations, we demonstrate the unitary equivalence of the AGSM problem to a separable problem earlier studied by Li and Wolf [Opt. Lett. 7, 256 (1982)] and Gori and Guattari [Opt. Commun. 48, 7 (1983)]. This conn ction enables one to write down, almost by inspection, the coherent-mode decomposition of the general AGSM beam. A universal feature of the eigenvalue spectrum of the AGSM family is noted.

Metal-insulator transition and giant magnetoresistance in La1-xMnO3-delta thin films and superlattices

The first fabrication of self-doped La1-xMnO3-delta films which are unique among the other La(1-x)M(x)MnO(3) (M = Ca, Ba and Pb) thin films showing giant magnetoresistance is reported. Ag-doped La0.7MnO3-delta films were grown on LaAlO3[100] substrates. These films show ferromagnetic and metal-insulator transition at 220 K and exhibit giant magnetoresistance (GMR) with Delta R/R(o) = 85% and Delta R/R(H) > 550%. Without silver addition these self-doped films are non-magnetic, Enhancement in GMR up to 8% has been observed in superlattices having alternate magnetic and non-magnetic La1-xMnO3-delta layers.

Dependence of giant magnetoresistance on oxygen stoichiometry and magnetization in polycrystalline La0.67Ba0.33MnOz

We have studied resistivity, magnetization, and magnetoresistance in polycrystalline La0.67Ba0.33MnOz by reducing the oxygen stoichiometry from z=2.99 to 2.80. As the oxygen content decreases, the resistivity of La0.67Ba0.33 MnOz increases and the magnetic transition temperature shifts to lower temperature. A large magnetoresistance effect was observed over a wide temperature range for all samples except the insulating z=2.80 sample. The similarity between our results on oxygen-deficient polycrystalline La0.67 Ba0.33MnOz and films previously reported to have a very large intrinsic magnetoresistance is discussed. At low temperature the magnetoresistance was observed to be strongly dependent on the magnetization. A possible mechanism for this effect is discussed.