High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques
| Data(s) |
1996
|
|---|---|
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/37284/1/HIGH_FIELD_DRIFT_VELOCITY.pdf Madhavi, S and Venkataraman, V and Liu, CW and Sturm, JC (1996) High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques. In: 54th Annual Device Research Conference, JUN 24-26, 1996, SANTA BARBARA. |
| Publicador |
IEEE |
| Relação |
http://ieeexplore.ieee.org/search/srchabstract.jsp?tp=&arnumber=546302&queryText%3DHigh+field+drift+velocity+of+2DEG+in+Si%2FSiGe+heterostructures+as+determined+by+magnetoresistance+techniques%26openedRefinements%3D*%26searchField%3DSearch+All http://eprints.iisc.ernet.in/37284/ |
| Palavras-Chave | #Physics |
| Tipo |
Conference Paper PeerReviewed |
