滇池试验围隔内不同形态铁浓度的变化与物化因子的关系

在蓝藻水华形成以后,通过围隔实验,从2003年6月份到10月份定期采样测定水体中的pH、溶解氧(DO)、水温、总铁、亚铁、过滤性铁(<0.45μm)和可溶性磷的浓度,研究物化因子对不同形态铁浓度变化的影响。实验结果表明,蓝藻水华优势种微囊藻在pH 7—9和水温17.5—20.5℃的条件下,生长旺盛,消耗了大量的亚铁,使亚铁浓度大幅度下降;溶解氧和磷酸盐对亚铁浓度没有显著影响;在水华蓝藻严重发生的条件下,水体中的总铁和过滤性铁浓度没有显著意义的变化,而亚铁浓度的变化与水华蓝藻的种群密度成显著负相关(r=-0

Complex chemistry DNS of n-heptane spray autoignition at high pressure and intermediate temperature conditions

Direct Numerical Simulations (DNS) of turbulent n-heptane sprays autoigniting at high pressure (P=24bar) and intermediate air temperature (Tair=1000K) have been performed to investigate the physical mechanisms present under conditions where low-temperature chemistry is expected to be important. The initial turbulence in the carrier gas, the global equivalence ratio in the spray region, and the initial droplet size distribution of the spray were varied. Results show that spray ignition exhibits a spotty nature, with several kernels developing independently in those regions where the mixture fraction is close to its most reactive value ξMR (as determined from homogeneous reactor calculations) and the scalar dissipation rate is low. Turbulence reduces the ignition delay time as it promotes mixing between air and the fuel vapor, eventually resulting in lower values of scalar dissipation. High values of the global equivalence ratio are responsible for a larger number of ignition kernels, due to the higher probability of finding regions where ξ=ξMR. Spray polydispersity results in the occurrence of ignition over a wider range of mixture fraction values. This is a consequence of the inhomogeneities in the mixing field that characterize these sprays, where poorly mixed rich spots are seen to alternate with leaner ones which are well-mixed. The DNS simulations presented in this work have also been used to assess the applicability of the Conditional Moment Closure (CMC) method to the simulation of spray combustion. CMC is found to be a valid method for capturing spray autoignition, although care should be taken in the modelling of the unclosed terms appearing in the CMC equations. © 2013 The Combustion Institute.

Detection and quantitative analysis of polychlorinated biphenyls in tilapia from Hawaiian waters

The purpose of this study was to investigate polychlorinated biphenyls (PCBs) contamination in tilapia (Oreochromis mossambicus) collected from the Manna stream and Ala Wai Canal of O'ahu, an island of the geographically isolated Hawaiian archipelago. Our results show that the average concentrations of PCBs varied from 51.90 to 89.42 ng g(-1) lipid weight for the sampling sites. Relative toxic potencies (RTPs) and toxic equivalencies (TEQs) were determined to be 20.38-40.60 ng TCDD g(-1) lipid weight and 2.89-4.17 ng TEQ g(-1) lipid weight by 7-ethoxy-resorufin-O-deethylase (EROD) activity analysis and calculation of PCB concentrations based on toxic equivalency factors (TEFs), respectively. Penta-chlorinated congeners were found to be predominant, which revealed that Aroclor 1254 was a possible major source of PCBs in our fish samples. PCB 118, an indicator PCBs, constituted more than 55% and 30% of the total PCBs and TEQs, respectively. In addition, PCB 118 was found to have a linear correlation to the total PCBs (R = 0.975) and TEQs (R = 0.782). Detection of concentrated PCBs in Hawaiian waters suggests a potentially adverse impact of this pollutant on human health, as well as ecological systems, and suggests the necessity of environmental monitoring and hazard assessment of PCBs within the Hawaiian Islands. (c) 2008 Published by Elsevier Ltd.

Primary cultured cells as sensitive in vitro model for assessment of toxicants-comparison to hepatocytes and gill epithelia

In an effort to develop cultured cell models for toxicity screening and environmental biomonitoring, we compared primary cultured gill epithelia and hepatocytes from freshwater tilapia (Oreochromis niloticus) to assess their sensitivity to AhR agonist toxicants. Epithelia were cultured on permeable supports (terephthalate membranes, "filters") and bathed on the apical with waterborne toxicants (pseudo in vivo asymmetrical culture conditions). Hepatocytes were cultured in multi-well plates and exposed to toxicants in culture medium. Cytochrome P4501A (measured as 7-Ethoxyresorufin-O-deethylase, EROD) was selected as a biomarker. For cultured gill epithelia, the integrity of the epithelia remained unchanged on exposure to model toxicants, such as 1,3,7,8-tetrachlorodibenzo-p-dioxin (TCDD), benzo(a)pyrene B[a]P, polychlorinated biphenyl (PCB) mixture (Aroclor 1254), and polybrominated diphenyl ether (PBDE) mixture (DE71). A good concentration-dependent response of EROD activity was clearly observed in both cultured gill epithelia and hepatocytes. The time-course response of EROD was measured as early as 3 h, and was maximal after 6 h of exposure to TCDD, B [alp and Aroclor 1254. The estimated 6 h EC50 for TCDD, B [a]P, and Aroclor 1254 was 1.2x10(-9), 5.7x10(-8) and 6.6x10(-6) M. For the cultured hepatocytes, time-course study showed that a significant induction of EROD took place at 18 h, and the maximal induction of EROD was observed at 24 h after exposure. The estimated 24 It EC50 for TCDD, B[a]P, and Aroclor 1254 was 1.4x10(-9), 8.1x10(-8) and 7.3x10(-6) M. There was no induction or inhibition of EROD in DE71 exposure to both gill epithelia and hepatocytes. The results show that cultured gill epithelia more rapidly induce EROD and are slightly more sensitive than cultured hepatocytes, and could be used as a rapid and sensitive tool for screening chemicals and monitoring environmental AhR agonist toxicants. (c) 2006 Elsevier B.V. All rights reserved.

Compact non-binary fast adders using single-electron devices

This paper proposes compact adders that are based on non-binary redundant number systems and single-electron (SE) devices. The adders use the number of single electrons to represent discrete multiple-valued logic state and manipulate single electrons to perform arithmetic operations. These adders have fast speed and are referred as fast adders. We develop a family of SE transfer circuits based on MOSFET-based SE turnstile. The fast adder circuit can be easily designed by directly mapping the graphical counter tree diagram (CTD) representation of the addition algorithm to SE devices and circuits. We propose two design approaches to implement fast adders using SE transfer circuits the threshold approach and the periodic approach. The periodic approach uses the voltage-controlled single-electron transfer characteristics to efficiently achieve periodic arithmetic functions. We use HSPICE simulator to verify fast adders operations. The speeds of the proposed adders are fast. The numbers of transistors of the adders are much smaller than conventional approaches. The power dissipations are much lower than CMOS and multiple-valued current-mode fast adders. (C) 2009 Elsevier Ltd. All rights reserved.

Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates

The temperature dependence of the formation of nano-scale indium clusters in InAlGaN quaternary alloys, which are grown by metalorganic chemical vapour deposition on GaN/Si(111) epilayers, is investigated. Firm evidence is provided to support the existence of phase separation, or nano-scale In-rich clusters, by the combined results of high-resolution transmission electron microscopy (HRTEM), high-resolution x-ray diffraction (HRXRD) and micro-Raman spectra. The results of HRXRD and Raman spectra indicate that the degree of phase separation is strong and the number of In clusters in the InAlGaN layers on silicon substrate is higher at lower growth temperatures than that at higher growth temperatures, which limits the In and Al incorporated into the InAlGaN quaternary alloys. The detailed mechanism of luminescence in this system is studied by low temperature photoluminescence (LT-PL). We conclude that the ultraviolet (UV) emission observed in the quaternary InAlGaN alloys arises from the matrix of a random alloy, and the second emission peak in the blue-green region results from the nano-scale indium clusters.

软件体系结构分析与评价方法评述

近年来,软件体系结构逐渐成为软件工程领域的研究热点以及大型软件系统开发和产品线开发中的关键技术.体系结构分析评价的目的是为了识别体系结构设计中的潜在风险,帮助开发人员进行设计决策.从软件体系结构的概念出发,分类介绍了体系结构描述的不同观点,评述了国内外有代表性的分析评价方法和工具.最后探讨了软件体系结构分析评价研究中存在的不足及其原因,作为总结,给出体系结构分析评价未来的发展方向.

GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N configuration

InxGa1-xAs/InP (0.39 less than or equal to x less than or equal to 0.68) strained-layer quantum wells having 20 wells with thickness of 50 Angstrom in a P-i-N configuration were grown by gas source molecular beam epitaxy (GSMBE). High-resolution X-ray diffraction rocking curves show the presence of up to seven orders of sharp and intense satellite reflection, indicative of the structural perfection of the samples. Low-temperature photoluminescence and low-temperature absorption spectra were used to determine the exciton transition energies as a function of strain. Good agreement is achieved between exciton transition energies obtained experimentally at low temperature with those calculated using the deformation potential theory.

Heteroepitaxial Growth of 3C-SiC Films on Maskless Patterned Silicon Substrates

Heteroepitaxial growth of 3C-SiC on patterned Si substrates by low pressure chemical vapor deposition (LPCVD) has been investigated to improve the crystal quality of 3C-SiC films. Si substrates were patterned with parallel lines, 1 to 10μm wide and spaced 1 to 10μm apart, which was carried out by photolithography and reactive ion etching. Growth behavior on the patterned substrates was systematically studied by scanning electron microscopy (SEM). An air gap structure and a spherical shape were formed on the patterned Si substrates with different dimensions. The air gap formed after coalescence reduced the stress in the 3C-SiC films, solving the wafer warp and making it possible to grow thicker films. XRD patterns indicated that the films grown on the maskless patterned Si substrates were mainly composed of crystal planes with (111) orientation.