Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

The origin of the flat band voltage roll-off (V-FB roll-off) in metal gate/high-k/ultrathin-SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on the V-FB sharp roll-off is proposed. The V-FB sharp roll-off appears when the thickness of the SiO2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the V-FB sharp roll-off.

Generation of 10 GHz, 1.9 ps optical pulse train using semiconductor optical amplifier and silica-based highly nonlinear fiber

We propose a simple approach to generate a high quality 10 GHz 1.9 ps optical pulse train using a semiconductor optical amplifier and silica-based highly nonlinear fiber. An optical pulse generator based on our proposed scheme is easy to set up with commercially available optical components. A 10 GHz, 1.9 ps optical pulse train is obtained with timing jitter as low as 60 fs over the frequency range 10 Hz-1 MHz. With a wavelength tunable CW laser, a wide wavelength tunable span can be achieved over the entire C band. The proposed optical pulse generator also can operate at different repetition rates from 3 to 10 GHz.

Generation of optimized wavelength-tunable optical pulse from an uncooled gain-switched Fabry-Perot semiconductor laser using optical amplifier as external light injection

We present a novel system design that can generate the optimized wavelength-tunable optical pulse streams from an uncooled gain-switched Fabry-Perot semiconductor laser using an optical amplifier as external light source. The timing jitter of gain-switched laser has been reduced from about 3 ps to 600 fs and the pulse width has been optimized by using our system. The stability of the system was also experimentally investigated. Our results show that an uncooled gain-switched FP laser system can feasibly produce the stable optical pulse trains with pulse width of 18 ps at the repetition frequency of 5 GHz during 7 h continuous working. We respectively proved the system feasibility under 1 GHz, 2.5 GHz and 5 GHz operation. (c) 2008 Elsevier B.V. All rights reserved.

Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility

Air-stable n-type field effect transistors were fabricated with an axially oxygen substituted metal phthalocyanine, tin (IV) phthalocyanine oxide (SnOPc), as active layers. The SnOPc thin films showed highly crystallinity on modified dielectric layer, and the electron field-effect mobility reached 0.44 cm(2) V-1 s(-1). After storage in air for 32 days, the mobility and on/off ratio did not obviously change. The above results also indicated that it is an effective approach of seeking n-type semiconductor by incorporating the appropriate metal connected with electron-withdrawing group into pi-pi conjugated system.

Phthalocyanato tin(IV) dichloride: An air-stable, high-performance, n-type organic semiconductor with a high field-effect electron mobility

Phthalocyanato tin(IV) dichloride, an axially dichloriniated MPc, is an air-stable high performance n-type organic semiconductor with a field-effect electron mobility of up to 0.30 cm(2) V-1 s(-1). This high mobility together with good device stability and commercial availability makes it a most suitable n-type material for future organic thin-film transistor applications.

Weak epitaxy growth of organic semiconductor thin films

The fabrication of organic semiconductor thin films is extremely important in organic electronic devices. This tutorial review-which should particularly appeal to chemists and physicists interested in organic thin-film growth, organic electronic devices and organic semiconductor materials-summarizes the method of weak epitaxy growth (WEG) and its application in the fabrication of high quality organic semiconductor thin films.

Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold

A simple and efficient method for patterning polymeric semiconductors for applications in the field of organic electronics is proposed. The entire polymer layer, except for the desired pattern, is selectively lifted off from a flat poly(dimethylsiloxane) (PDMS) stamp surface by an epoxy mold with a relief pattern. This is advantageous because the elastic deformation of the PDMS stamp around protrusions of a patterned stamp under pressure can assist the plastic deformation of a polymer film along the pattern edges, yielding large area and high quality patterns, and the PDMS surface has low surface energy, which allows the easy removal of the polymer film.

Blue amplified spontaneous emission from 2, 1, 3-benzothiadiazole attached polyfluorene semiconductor polymer with high photoluminescence efficiency

The amplified spontaneous emission properties of a 2, 1, 3-benzothiadiazole attached polyfluorene semiconductor polymer were studied. The conjugated polymer shows a high photoluminescence quantum efficiency of 67% and emits a narrowed blue emissive spectrum with a full width at half-maximum of 3.6 nm when optically pumped, indicating better lasing action. A threshold energy as low as 0.22 mJ pulse(-1) cm(-2), a net gain of 40.54 cm(-1) and a loss of 7.8 cm(-1) were obtained, demonstrating that this conjugated polymer could be a promising candidate as the gain medium for the fabrication of blue polymer lasers.

Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices

We investigated electrical properties of vanadyl phthalocyanine (VOPc) metal-insulator-semiconductor (MIS) devices by the measurement of capacitance and conductance, which were fabricated on ordered para-sexiphenyl (p-6P) layer by weak epitaxy growth method. The VOPc/p-6P MIS diodes showed a negligible hysteresis effect at a gate voltage of +/- 20 V and small hysteresis effect at a gate voltage of +/- 40 V due to the low interface trap state density of about 1x10(10) eV(-1) cm(-2). Furthermore, a high transition frequency of about 10 kHz was also observed under their accumulation mode. The results indicated that VOPc was a promising material and was suitable to be applied in active matrix liquid crystal displays and organic logic circuits.

Charge ordering induced metal-semiconductor transition in Ag2BiO3: A first-principles study

Accurate ab initio density-functional calculations are performed to investigate the relationship of the ground-state crystal structures and electronic properties of Ag2BiO3 compound. The results indicate that Ag2BiO3 in Pnna phase, in which the bismuth atoms occupy the same Wyckoff positions, exhibits metallic conductivity, while in Pnn2 and Pn phases, Ag2BiO3 exhibits semiconducting character, which is in agreement with the experimental results. Charge ordering is indeed induced by the crystal inversion twin in the Pnn2 phase compared with the Pnna phase. In the low temperature phase Pn, the charge ordering is similar to that of Pnn2 phase although it is more distorted in Pn phase. In addition, the calculation indicates that the charge ordering is caused in the 6s electron rearrangement.

Naphthyl end-capped quarterthiophene: A simple organic semiconductor with high mobility and air stability

An organic semiconductor that can be mass produced is synthesized by end-capping quaterthiophene with naphthyl units (NaT4). An organic thin-film transistor (OTFT, see figure) has been fabricated using this organic semiconductor, and exhibits stability under ambient conditions with a mobility of up to 0.40 cm(2) V-1 s(-1).

Semiconductor "nano-onions" with multifold alternating CdS/CdSe or CdSe/CdS structure

"Nano-onions" with multifold alternating CdS/CdSe or CdSe/CdS structure have been synthesized via a two-phase approach. The influences of shell on photoluminescence (PL) quantum yields (QYs) and PL lifetimes are investigated and discussed. It is found that the outmost shell plays an important role in the PL QYs and PL lifetimes of the multishells "onion-like" nanocrystals. The PL QYs and PL lifetimes fluctuate regularly with CdSe and CdS shells. The PL QY increases when the nanocrystals have an outmost CdS shell; however, it decreases dramatically with the outmost CdSe shell. The trend of the change of PL lifetimes is consistent with that of the QYs. The crystal structure and composition of the novel nano-onions are characterized by transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectra techniques.