DNA topology: feeling the pulse of a topoisomerase.

The action of individual type II DNA topoisomerases has been followed in real time by observing the elastic response of single DNA molecules to sequential strand passage events. Micromanipulation methods provide a complementary approach to biochemical studies for investigating the mechanism of DNA topoisomerases.

Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition

We present a high‐resolution electron microscopy study of the microstructure of boron nitride thin films grown on silicon (100) by radio‐frequency plasma‐assisted chemical vapor deposition using B2H6 (1% in H2) and NH3 gases. Well‐adhered boron nitride films grown on the grounded electrode show a highly oriented hexagonal structure with the c‐axis parallel to the substrate surface throughout the film, without any interfacial amorphous layer. We ascribed this textured growth to an etching effect of atomic hydrogen present in the gas discharge. In contrast, films grown on the powered electrode, with compressive stress induced by ion bombardment, show a multilayered structure as observed by other authors, composed of an amorphous layer, a hexagonal layer with the c‐axis parallel to the substrate surface and another layer oriented at random

Frequency-dependent attenuation as a potential indicator of oil saturation

At seismic frequencies, wave-induced fluid flow is a major cause of P-wave attenuation in partially saturated porous rocks. Attenuation is of great importance for the oil industry in the interpretation of seismic field data. Here, the effects on P-wave attenuation resulting from changes in oil saturation are studied for media with coexisting water, oil, and gas. For that, creep experiments are numerically simulated by solving Biot's equations for consolidation of poroelastic media with the finite-element method. The experiments yield time-dependent stress?strain relations that are used to calculate the complex P-wave modulus from which frequency-dependent P-wave attenuation is determined. The models are layered media with periodically alternating triplets of layers. Models consisting of triplets of layers having randomly varying layer thicknesses are also considered. The layers in each triplet are fully saturated with water, oil, and gas. The layer saturated with water has lower porosity and permeability than the layers saturated with oil and gas. These models represent hydrocarbon reservoirs in which water is the wetting fluid preferentially saturating regions of lower porosity. The results from the numerical experiments showed that increasing oil saturation, connected to a decrease in gas saturation, resulted in a significant increase of attenuation at low frequencies (lower than 2 Hz). Furthermore, replacing the oil with water resulted in a distinguishable behavior of the frequency-dependent attenuation. These results imply that, according to the physical mechanism of wave-induced fluid flow, frequency-dependent attenuation in media saturated with water, oil, and gas is a potential indicator of oil saturation.

Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy

In this study, we present a detailed structural characterization by means of transmission electron microscopy and Raman spectroscopy of polymorphous silicon (pm-Si:H) thin films deposited using radio-frequency dust-forming plasmas of SiH4 diluted in Ar. Square-wave modulation of the plasma and gas temperature was varied to obtain films with different nanostructures. Transmission electron microscopy and electron diffraction have shown the presence of Si crystallites of around 2 nm in the pm-Si:H films, which are related to the nanoparticles formed in the plasma gas phase coming from their different growth stages, named particle nucleation and coagulation. Raman scattering has proved the role of the film nanostructure in the crystallization process induced ¿in situ¿ by laser heating.

Ion assisted deposition of thin films by substrate tuned radio frequency magnetron sputtering

The substrate tuning technique was applied to a radio frequency magnetron sputtering system to obtain a variable substrate bias without an additional source. The dependence of the substrate bias on the value of the external impedance was studied for different values of chamber pressure, gas composition and rf input power. A qualitative explanation of the results is given, based on a simple model, and the role of the stray capacitance is clearly disclosed. Langmuir probe measurements show that this system allows independent control of the ion flux and the ion energy bombarding the growing film. For an argon flow rate of 2.8 sccm and a radio frequency power of 300 W (intermediate values of the range studied) the ion flux incident on the substrate was 1.3 X 1020-m-2-s-1. The maximum ion energy available in these conditions can be varied in the range 30-150 eV. As a practical application of the technique, BN thin films were deposited under different ion bombardment conditions. An ion energy threshold of about 80 eV was found, below which only the hexagonal phase was present in the films, while for higher energies both hexagonal and cubic phase were present. A cubic content of about 60% was found for an ion energy of 120 V.

Influence of pressure and radio frequency power on deposition rate and structural properties of hydrogenated amorphous silicon thin films prepared by plasma deposition

The influence of radio frequency (rf) power and pressure on deposition rate and structural properties of hydrogenated amorphous silicon (a-Si:H) thin films, prepared by rf glow discharge decomposition of silane, have been studied by phase modulated ellipsometry and Fourier transform infrared spectroscopy. It has been found two pressure regions separated by a threshold value around 20 Pa where the deposition rate increases suddenly. This behavior is more marked as rf power rises and reflects the transition between two rf discharges regimes. The best quality films have been obtained at low pressure and at low rf power but with deposition rates below 0.2 nm/s. In the high pressure region, the enhancement of deposition rate as rf power increases first gives rise to a reduction of film density and an increase of content of hydrogen bonded in polyhydride form because of plasma polymerization reactions. Further rise of rf power leads to a decrease of polyhydride bonding and the material density remains unchanged, thus allowing the growth of a-Si:H films at deposition rates above 1 nm/s without any important detriment of material quality. This overcoming of deposition rate limitation has been ascribed to the beneficial effects of ion bombardment on the a-Si:H growing surface by enhancing the surface mobility of adsorbed reactive species and by eliminating hydrogen bonded in polyhydride configurations.

Gravitational wave pulse and soliton wave collision

We study the collision of a gravitational wave pulse and a soliton wave on a spatially homogeneous background. This collision is described by an exact solution of Einsteins equations in a vacuum which is generated from a nondiagonal seed by means of a soliton transformation. The effect produced by the soliton on the amplitude and polarization of the wave is considered.

Synchronization in a lattice model of pulse-coupled oscillators

We analyze the collective behavior of a lattice model of pulse-coupled oscillators. By means of computer simulations we find the relation between the intrinsic dynamics of each member of the population and their mutual interactions that ensures, in a general context, the existence of a fully synchronized regime. This condition turns out to be the same as that obtained for the globally coupled population. When the condition is not completely satisfied we find different spatial structures. This also gives some hints about self-organized criticality.

Pulse wave analysis aortic pressure . distole should also be considered

La rigidité anormalement haute des artères à grande conductance est un marqueur de l'augmentation du risque cardiovasculaire et est typiquement retrouvée chez les patients diabétiques ou hypertendus. Ces vaisseaux deviennent plus rigides avec l'âge, expliquant la haute prévalence d'hypertension systolique chez les personnes âgées. Cette rigidification agit sur la pression sanguine de plusieurs façons. Notamment la fonction windkessel est gênée, menant à l'augmentation de la pression systolique et de la pression puisée, la diminution de la pression diastolique, et ainsi à l'augmentation de la postcharge ventriculaire gauche associée à une probable diminution de la perfusion coronarienne. De plus, la propagation des ondes de pression le long de l'arbre vasculaire est accélérée, de sorte que les ondes réfléchies générées au site de décalage d'impédance atteignent l'aorte ascendante plus tôt par rapport au début de l'éjection ventriculaire, aboutissant à une augmentation de la pression systolique centrale, ce qui n'arriverait pas en présence de vaisseaux moins rigides. Dans ce cas, au contraire, les ondes de pression antérogrades et réfléchies voyages plus lentement, de sorte que les ondes de réflexion tendent à atteindre l'aorte centrale une fois l'éjection terminée, augmentant la pression diastolique et contribuant à la perfusion coronarienne. La tonométrie d'applanation est une méthode non invasive permettant l'évaluation de la forme de l'onde de pression au niveau l'aorte ascendante, basée sur l'enregistrement du pouls périphérique, au niveau radial dans notre étude. Nous pouvons dériver à partir de cette méthode un index d'augmentation systolique (sAIX) qui révèle quel pourcentage de la pression centrale est du aux ondes réfléchies. Plusieurs études ont montré que cet index est corrélé à d'autres mesures de la rigidité artérielle comme la vitesse de l'onde de pouls, qu'il augmente avec l'âge et avec les facteurs de risques cardiovasculaires, et qu'il est capable de préciser le pronostic cardiovasculaire. En revanche, peu d'attention a été portée à l'augmentation de la pression centrale diastolique due aux ondes réfléchies (dAIX). Nous proposons donc de mesurer cet index par un procédé d'analyse développé dans notre laboratoire, et ce dans la même unité que l'index systolique. Etant donné que les modifications de la paroi artérielle modulent d'une part la vitesse de l'onde de pouls (PWV) et d'autre part le temps de voyage aller-retour des ondes de pression réfléchies aux sites de réflexion, toute augmentation de la quantité d'énergie réfléchie atteignant l'aorte pendant la systole devrait être associée à une diminution de l'énergie arrivant au même point pendant la diastole. Notre étude propose de mesurer ces deux index, ainsi que d'étudier la relation de l'index d'augmentation diastolique (dAIX) avec la vitesse de propagation de l'onde de pouls (PWV) et avec le rythme cardiaque (HR), ce dernier étant connu pour influencer l'index d'augmentation systolique (sAIX) . L'influence de la position couchée et assise est aussi étudiée. Les mesures de la PWV et des sAIX et dAIX est réalisée chez 48 hommes et 45 femmes âgées de 18 à 70 ans, classés en 3 groupes d'âges. Les résultats montrent qu'en fonction de l'âge, le genre et la position du corps, il y a une relation inverse entre sAIX et dAIX. Lorsque PWV et HR sont ajoutés comme covariables à un modèle de prédiction comprenant l'âge, le genre et la position du corps comme facteurs principaux, sAIX est directement lié à PWV (p<0.0001) et inversement lié à HR (p<0.0001). Avec la même analyse, dAIX est inversement lié à PWV (p<0.0001) et indépendant du rythme cardiaque (p=0.52). En conclusion, l'index d'augmentation diastolique est lié à la rigidité vasculaire au même degré que l'index d'augmentation systolique, alors qu'il est affranchi de l'effet confondant du rythme cardiaque. La quantification de l'augmentation de la pression aortique diastolique due aux ondes réfléchies pourrait être une partie utile de l'analyse de l'onde de pouls.

Pattern selection in a lattice of pulse-coupled oscillators

We study spatio-temporal pattern formation in a ring of N oscillators with inhibitory unidirectional pulselike interactions. The attractors of the dynamics are limit cycles where each oscillator fires once and only once. Since some of these limit cycles lead to the same pattern, we introduce the concept of pattern degeneracy to take it into account. Moreover, we give a qualitative estimation of the volume of the basin of attraction of each pattern by means of some probabilistic arguments and pattern degeneracy, and show how they are modified as we change the value of the coupling strength. In the limit of small coupling, our estimative formula gives a pefect agreement with numerical simulations.

Mechanisms of synchronization and pattern formation in a lattice of pulse-coupled oscillators

We analyze the physical mechanisms leading either to synchronization or to the formation of spatiotemporal patterns in a lattice model of pulse-coupled oscillators. In order to make the system tractable from a mathematical point of view we study a one-dimensional ring with unidirectional coupling. In such a situation, exact results concerning the stability of the fixed of the dynamic evolution of the lattice can be obtained. Furthermore, we show that this stability is the responsible for the different behaviors.

Pratique du scanner en Suisse: fréquence et évolution temporelle [CT utilisation in Switzerland: frequency and secular trends]

PURPOSE: This study analyzes CT examinations in Switzerland. MATERIALS AND METHODS: Using different sources (administrative data on the equipment, a 1998 nationwide inquiry into practices, and data provided by the Swiss University Hospitals of Basel, Zurich, and Lausanne), we determined the frequency of CT examinations (hospitals and private radiologists) in 1998 according to different descriptive variables and studied the progression in CT use over time. RESULTS: CT scanners increased by 7% between 1998 and 2004. The average annual number of CT examinations in 1998 was 46.3/1000 population, 3.4% of all radiological examinations in Switzerland in 1997-1998. The most frequent examination was CT of the skull (24%), while private radiology institutes perform more CTs of the spine. More CT examinations were performed for men than for women (sex ratio M/F=1.17). The average annual increase in CT in Swiss hospitals varied from 8% for Basel to 18% for Lausanne. Finally, the proportion of pediatric examinations was 5%; their numbers appear to be stabilizing. CONCLUSION: There is a significant increase in CT examinations. It is hoped that our study will heighten awareness among doctors of CT examinations in order to optimize their use.

BK virus infection in hematopoietic stem cell transplant recipients: frequency, risk factors, and association with postengraftment hemorrhagic cystitis.

Blood samples from 132 consecutive hematopoietic stem cell transplant recipients were obtained and tested weekly for BK virus DNA by use of quantitative real-time PCR. Forty-four patients (33%) developed BK viremia at a median of 41 days (range, 9-91 days) after transplantation. Patients with hemorrhagic cystitis that occurred after platelet engraftment had higher levels of viremia than did patients without hemorrhagic cystitis (median, 9.7x10(3) vs. 0 copies/mL; P=.008) and patients with hemorrhagic cystitis that occurred before platelet engraftment (median, 9.7x10(3) vs. 0 copies/mL; P=.0006). BK viremia also was strongly associated with postengraftment hemorrhagic cystitis in a time-dependent analysis (P=.004).