Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy


Autoria(s): Viera Mármol, Gregorio; Huet, S.; Bertrán Serra, Enric; Boufendi, L.
Contribuinte(s)

Universitat de Barcelona

Data(s)

03/05/2012

Resumo

In this study, we present a detailed structural characterization by means of transmission electron microscopy and Raman spectroscopy of polymorphous silicon (pm-Si:H) thin films deposited using radio-frequency dust-forming plasmas of SiH4 diluted in Ar. Square-wave modulation of the plasma and gas temperature was varied to obtain films with different nanostructures. Transmission electron microscopy and electron diffraction have shown the presence of Si crystallites of around 2 nm in the pm-Si:H films, which are related to the nanoparticles formed in the plasma gas phase coming from their different growth stages, named particle nucleation and coagulation. Raman scattering has proved the role of the film nanostructure in the crystallization process induced ¿in situ¿ by laser heating.

Identificador

http://hdl.handle.net/2445/24793

Idioma(s)

eng

Publicador

American Institute of Physics

Direitos

(c) American Institute of Physics, 2001

info:eu-repo/semantics/openAccess

Palavras-Chave #Pel·lícules fines #Espectroscòpia Raman #Nanoestructures #Microelectrònica #Radiofreqüència #Optoelectrònica #Thin films #Raman spectroscopy #Nanostructures #Microelectronics #Radio frequency #Optoelectronics
Tipo

info:eu-repo/semantics/article