Frequency upconversion in a Pr(3+) doped chalcogenide glass containing silver nanoparticles

We report on orange-to-blue frequency upconversion (UC) in Pr(3+) doped chalcogenide glass (Ga(10)Ge(25)S(65)) doped with Ag(2)S and heat treated under different conditions to nucleate silver nanoparticles (NPs). The experiments were performed using 7 ns pulses from a dye laser that operates at similar to 590 nm, in resonance with the (3)H(4)->(1)D(2) transition of Pr(3+) ions. The enhancement observed in the UC emission at similar to 494 nm, ascribed as (3)P(0)->(3)H(4) transition of the Pr(3+) ion, is attributed to the large local field acting on the emitting ions due to the presence of the metallic NPs. (C) 2008 American Institute of Physics.

Enhanced luminescence of Tb3+/Eu3+ doped tellurium oxide glass containing silver nanostructures

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTiO3

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Near-infrared third-order nonlinearity of PbO-GeO(2) films containing Cu and Cu(2)O nanoparticles

We report measurements of the nonlinear (NL) refractive index n(2) of lead-germanium films (LGFs) containing Cu and Cu(2)O nanoparticles (NPs). The thermally managed eclipse Z-scan technique with 150 fs pulses from a laser operating at 800 nm was used. The NL refractive index measured, n(2)=6.3x10(-12) cm(2)/W has electronic origin and the NL absorption coefficient alpha(2) is smaller than 660 cm/GW. The figure of merit n(2)/lambda alpha(2) is enhanced by more than two orders of magnitude in comparison with the result for the LGFs without the copper based NPs. (C) 2008 American Institute of Physics.

Two-dimensional photonic crystals in antimony-based films fabricated by holography

In this work, we demonstrated the fabrication of two-dimensional (2D) photonic crystals layers (2D-PCLs) by combining holographic recording and the evaporation of antimony-based glasses. Such materials present high refractive indices that can be tuned from 1.8 to 2.4, depending on the film composition; thus, they are interesting dielectric materials for fabrication of 2D-PCLs. The good quality of the obtained samples allowed the measurement of their PC properties through the well-defined Fano resonances that appear in the transmittance spectrum measurements at different incidence angles. The experimental results are in good agreement with the calculated band diagram for the hexagonal asymmetric structure. (C) 2008 American Institute of Physics.

Resonant x-ray diffraction as a tool to calculate mixed valence ratios: Application to Prussian Blue materials

An approach is proposed here to calculate mixed valence ratios in molecular compounds. Synchrotron x-ray powder diffraction experiments were conducted to determine the Fe(+3)/Fe(+2) ratio in Prussian Blue compounds, which were elected as an example of the use of this approach. As a result, a resonant x-ray diffraction measurement provided direct evidence that the vacant [Fe(CN)(6)] group was randomly absent from similar to 31% of the structure, which was indicated by structural differences caused by variations in the anomalous dispersion term. These findings are very important for a deeper understanding of the changes occurring in properties during in situ compositional variations. (c) 2008 American Institute of Physics.

Evolution of photoluminescence as a function of the structural order or disorder in CaMoO4 nanopowders

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Piezoelectric behavior of SrRuO(3) buffered lanthanum modified bismuth ferrite thin films grown by chemical method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Stepped light-induced transient measurements of photocurrent and voltage in dye-sensitized solar cells based on ZnO and ZnO:Ga

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Presence of excited electronic state in CaWO4 crystals provoked by a tetrahedral distortion: An experimental and theoretical investigation

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Hydrogenated amorphous carbon as protective coating for a forming tool

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Study of superficial properties of titanium treated by PIIID

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Hydrodynamic aspects of the amorphous alloy ribbon fabrication

Conditions for as-quenched amorphous ribbon fabrication by a single roll-casting method are analyzed from a hydrodynamic standpoint. The analysis is based on the investigation of the processing conditions for Fe 4 0Ni 40P 14B 6 amorphous ribbons. It is shown that the dependence of ribbon thickness on the ejection pressure for different roll angular velocities and different dimensions of crucible and orifice can be obtained from general considerations on the melt flow regime.

Theory of electrical characteristics for metal-oxide-insulator Schottky barrier and metal-insulator-metal structures

The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, the intimate metal-insulator and metal-oxide-insulator contact are discussed. Further, the steady-state characteristics of metal-oxide-insulator-metal structures are also discussed. Oxide is an insulator with wider energy band gap (about 50 Å thick). A uniform energetic distribution of impurities is considered in addition to impurities at a single energy level inside the surface charge region at the oxide-insulator interface. Analytical expressions are presented for electrical potential, field, thickness of the depletion region, capacitance, and charge accumulated in the surface charge region. The electrical characteristics are compared with reference to relative densities of two types of impurities. ln I is proportional to the square root of applied potential if energetically distributed impurities are relatively important. However, distribution of the electrical potential is quite complicated. In general energetically distributed impurities can considerably change the electrical characteristics of these structures.