Nutrient Enhanced Coastal Ocean Productivity (NECOP). Data report: CTD and hydrographic data, R/V Pelican cruise, April 3-11, 1993

The Nutrient Enhanced Coastal Ocean Productivity (NECOP) Program is a component of NOAA's Coastal Ocean Program. The central hypothesis of this research is: Anthropogenic nutrient inputs have enhanced coastal ocean productivity with subsequent impacts on coastal ocean water quality, living resource yields, and the global marine carbon cycle. The initial study area for this program is the Mississippi/Atchafalaya River Outflow and adjacent Louisiana shelf region.

YBCO single grains seeded by 45° - 45° bridge-seeds of different lengths

Single grain, (RE)BCO bulk superconductors in large or complicated geometries are required for a variety of potential applications, such as motors and generators and magnetic shielding devices. As a result, top, multi-seeded, melt growth (TMSMG) has been investigated over the past two years in an attempt to enlarge the size of (RE)BCO single grains specifically for such applications. Of these multi-seeding techniques, so-called bridge seeding provides the best alignment of two seeds in a single grain growth process. Here we report, for the first time, the successful growth of YBCO using a special, 45{\deg} - 45{\deg}, arrangement of bridge-seeds. The superconducting properties, including trapped field, of the multi-seeded YBCO grains have been measured for different bridge lengths of the 45{\deg}- 45{\deg} bridge-seeds. The boundaries at the impinging growth front and the growth features of the top, multi-seeded surface and cross-section of the multi-seeded, samples have been analysed using optical microscopy. The results suggest that an impurity-free boundary between the two seeds of each leg of the bridge-seed can form when 45{\deg}- 45{\deg} bridge-seeds are used to enlarge the size of YBCO grains.

A comparison of 0°-0° and 45°-45° bridge-seeded, YBCO single grains

A variety of multiseeding techniques have been investigated over the past 20 yr in an attempt to enlarge bulk (RE)BCO superconducting samples fabricated by the top-seeded melt growth (TSMG) process for practical applications. Unfortunately, these studies have failed to establish whether technically useful values of trapped field can be achieved in multiseeded bulk samples. In this work specially designed, 0°-0° and 45°-45° bridge seeds of different lengths have been employed to produce improved alignment of the seeds during the TSMG process. The ability of these bridge-seeded samples to trap magnetic field, which is the key superconducting property for practical applications of bulk (RE)BCO, is compared for the samples seeded using 0°-0° and 45°-45° bridge seeds of different lengths. The grain boundaries produced by these bridge seeds are analyzed in detail, and the similarities and differences between the two bridge-seeding processes are discussed. © 2013 The American Ceramic Society.

An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

Optimized AlGaN/AlN/GaN high electron mobility transistor (HEMT) with high mobility GaN channel layer structures were grown on 2-in. diameter semi-insulating 6H-SiC substrates by MOCVD. The 2-in. diameter GaN HEMT wafer exhibited a low average sheet resistance of 261.9 Omega/square, with the resistance un-uniformity as low as 2.23%. Atomic force microscopy measurements revealed a smooth AlGaN surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. For the single-cell HEMTs device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 A/mm, an extrinsic transconductance of 450 mS/mm, a current gain cutoff frequency of 24 GHz and a maximum frequency of oscillation 54 GHz were achieved. The four-cell internally-matched GaN HEMTs device with 10-mm total gate width demonstrated a very high output power of 45.2 W at 8 GHz under the condition of continuous-wave (CW), with a power added efficiency of 32.0% and power gain of 6.2 dB. To our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for X-band GaN-based HEMTs. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

玻璃盖板与45°膜复合结构透过率的研究

讨论了一种类似蜂窝或V型膜的玻璃盖板与45°膜复合结构(简称45°膜结构)的光热性能。其透过率比蜂窝结构高，隔热性能与蜂窝结构和V型膜结构相当，在低纬地区应用效果甚好。

多层In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As量子点的变温光致发光研究

测量了自组织多层In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的变温光致发光谱，同时观察到来自浸润层和量子点的发光，首次直接观察了浸润层和量子点之间的载流子热转移。分析发光强度随温度的变化发现浸润发光的热淬灭包括两个过程

不同尺寸分布的自组织In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的静压光谱

在15K测量了不同尺寸分布的In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的静压我致发光，静压范围为0--1.3GPa。常压下观察到三个发光峰，分别来源于不同尺寸的量子点(横向直径分别为26、52和62nm)的发光。它产的压力系数分别为82、94和98meV/GPa,都小于In_(0.55)Al_(0.45)As体材料带边的压力系数，特别是尺寸为26nm的小量子点比In_(0.55)Al_(0.45)As体材料带边小17%，并且压力系数随量子点尺寸的变小而减小。理论计算表明有效质量的增在和Γ-X混合是量子点压力系数变小的主要原因，并得到横向直径为26和52nm的小量子点的Γ－X混合势为15和10meV。根据实验还确定In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点系统X能带具有Ⅱ类结构，并且估算出价带不连续量为0.15±0.02。

温度对Ti_(45)Zr_(35)Ni_(20)合金电化学贮氢性能的影响

采用真空熔炼法制备了Ti45Zr35Ni20合金,研究了合金在不同温度下的电化学贮氢性能。结果表明,Ti45Zr35-Ni20电极的电化学性能随着温度而变化,温度从323 K升高到343 K时,电极的活化次数从22次减少到8次,放电容量从86.1 mAh/g增到135.0 mAh/g,快速放电能力也有所提高,然而,高温使电极的循环稳定性显著下降,自放电率增大。