Simulating vision loss: What levels of impairment are actually represented?

Capability loss simulators give designers a brief experience of some of the functional effects of capability loss. They are an effective method of helping people to understand the impact of capability loss on product use. However, it is also important that designers know what levels of loss are being simulated and how they relate to the user population. The study in this paper tested the Cambridge Simulation Glasses with 25 participants to determine the effect of different numbers of glasses on a person's visual acuity. This data is also related to the glasses' use in usability assessment. A procedure is described for determining the number of simulator glasses with which the visual detail on a product is just visible. This paper then explains how to calculate the proportion of the UK population who would be unable to distinguish that detail.

Change prediction using interface data

Managing change can be challenging due to the high levels of interdependency in concurrent engineering processes. A key activity in engineering change management is propagation analysis, which can be supported using the change prediction method. In common with most other change prediction approaches, the change prediction method has three important limitations: L1: it depends on highly subjective input data; L2: it is capable of modelling 'generalised cases' only and cannot be; customised to assess specific changes; and L3: the input data are static, and thus, guidance does not reflect changes in the design. This article contributes to resolving these limitations by incorporating interface information into the change prediction method. The enhanced method is illustrated using an example based on a flight simulator. © The Author(s) 2013.

On-line policy optimisation of Bayesian spoken dialogue systems via human interaction

A partially observable Markov decision process has been proposed as a dialogue model that enables robustness to speech recognition errors and automatic policy optimisation using reinforcement learning (RL). However, conventional RL algorithms require a very large number of dialogues, necessitating a user simulator. Recently, Gaussian processes have been shown to substantially speed up the optimisation, making it possible to learn directly from interaction with human users. However, early studies have been limited to very low dimensional spaces and the learning has exhibited convergence problems. Here we investigate learning from human interaction using the Bayesian Update of Dialogue State system. This dynamic Bayesian network based system has an optimisation space covering more than one hundred features, allowing a wide range of behaviours to be learned. Using an improved policy model and a more robust reward function, we show that stable learning can be achieved that significantly outperforms a simulator trained policy. © 2013 IEEE.

The effect of incomplete ionization on the turn-off behavior of FS IGBTs

This letter demonstrates for the first time the effect of the incomplete ionization (I.I.) of the transparent p-anode layer on the static and dynamic characteristics of the field-stop insulated gate bipolar transistors (FS IGBTs). This effect needs to be considered in FS IGBTs TCAD modeling to match accurately the device characteristics across a wide range of temperatures. The acceptor ionization energy (EA) governing the I.I. mechanism for the p-anode is extracted via matching the experimental turn-off waveforms and the static performance with Medici simulator. © 1980-2012 IEEE.

Gaussian processes for POMDP-based dialogue manager optimization

A partially observable Markov decision process (POMDP) has been proposed as a dialog model that enables automatic optimization of the dialog policy and provides robustness to speech understanding errors. Various approximations allow such a model to be used for building real-world dialog systems. However, they require a large number of dialogs to train the dialog policy and hence they typically rely on the availability of a user simulator. They also require significant designer effort to hand-craft the policy representation. We investigate the use of Gaussian processes (GPs) in policy modeling to overcome these problems. We show that GP policy optimization can be implemented for a real world POMDP dialog manager, and in particular: 1) we examine different formulations of a GP policy to minimize variability in the learning process; 2) we find that the use of GP increases the learning rate by an order of magnitude thereby allowing learning by direct interaction with human users; and 3) we demonstrate that designer effort can be substantially reduced by basing the policy directly on the full belief space thereby avoiding ad hoc feature space modeling. Overall, the GP approach represents an important step forward towards fully automatic dialog policy optimization in real world systems. © 2013 IEEE.

Effects of solar ultraviolet radiation on photosynthesis of the marine red tide alga Heterosigma akashiwo (Raphidophyceae)

In order to assess the short- and long-term impacts of UV radiation (LTVR, 280-400 nm) on the red tide alga, Heterosigma akashiwo, we exposed the cells to three different solar radiation treatments (PAB: 280-700 rim, PA: 320-700 nm, R 400-700 nm) under both solar and artificial radiation. A significant decrease in the effective quantum yield () during high irradiance periods (i.e., local noon) was observed, but the cells partially recovered during the evening hours. Exposure to high irradiances for 15, 30, and 60 min under a solar simulator followed by the recovery (8 h) under dark, 9 and 100 mu mol photons m(-2) s(-1) of PAR, highlighted the importance of the irradiance level during the recovery period. Regardless the radiation treatments, the highest recovery (both in rate and total Y) was found at a PAR irradiance of 9 mu mol photons m(-2) s(-1), while the lowest was observed at 100 mu mol photons m(-2) s(-1). In all experiments, PAR was responsible for most of the observed inhibition; nevertheless, the cells exposed only to PAR had the highest recovery in any condition, as compared to the other radiation treatments. In long-term experiments (10 days) using semi-continuous cultures, there was a significant increase of UV-absorbing compounds (UVabc) per cell from 1.2 to > 4 x 10(-6) mu g UVabc cell(-1) during the first 3-5 days of exposure to solar radiation. The highest concentration of UVabc was found in samples exposed in the PAB as compared to PA and P treatments. Growth rates (mu) mimic the behavior of UV-absorbing compounds, and during the first 5 days mu increased from < 0.2 to ca. 0.8, and stayed relatively constant at this value during the rest of the experiment. The inhibition of the Y decreased with increasing acclimation of cells. All our data indicates that H. akashiwo is a sensitive species, but was able acclimate relatively fast (3-5 days) synthesizing UV-absorbing compounds and thus reducing any impact either on photosystem 11 or on growth. (c) 2006 Published by Elsevier B.V.

Compact non-binary fast adders using single-electron devices

This paper proposes compact adders that are based on non-binary redundant number systems and single-electron (SE) devices. The adders use the number of single electrons to represent discrete multiple-valued logic state and manipulate single electrons to perform arithmetic operations. These adders have fast speed and are referred as fast adders. We develop a family of SE transfer circuits based on MOSFET-based SE turnstile. The fast adder circuit can be easily designed by directly mapping the graphical counter tree diagram (CTD) representation of the addition algorithm to SE devices and circuits. We propose two design approaches to implement fast adders using SE transfer circuits the threshold approach and the periodic approach. The periodic approach uses the voltage-controlled single-electron transfer characteristics to efficiently achieve periodic arithmetic functions. We use HSPICE simulator to verify fast adders operations. The speeds of the proposed adders are fast. The numbers of transistors of the adders are much smaller than conventional approaches. The power dissipations are much lower than CMOS and multiple-valued current-mode fast adders. (C) 2009 Elsevier Ltd. All rights reserved.

Polarization effects simulation of AlGaN/GaN heterojunction by using a symbolistic delta-doping layer

Polarization effects in AlGaN/GaN heterojunction are simulated based on a traditional semiconductor device simulator. A delta doping layer is purposely inserted at the interface of the heterojunction in the simulation, so the ionized donors or acceptors can represent polarization-induced positive or negative fixed charges. The free electron distribution of single AlGaN/GaN heterostructures with Ga-face and N-face growth is compared, and the results of the simulation show that carrier confinement takes place only in the former structure. The dependence of sheet density of free electrons at the interface of Ga-face growth AlGaN/GaN on Al composition and the thickness of AlGaN is also investigated. The consistency of simulation results with the experiments and calculations reported by other researchers shows that this method can be effectively used to deal with the polarization effects in the simulation of GaN-based heterojunction devices. (C) 2004 Elsevier Ltd. All rights reserved.

Analog-digital and digital-analog converters using single-electron and MOS transistors

This paper proposes two kinds of novel single-electron analog-digital conversion (ADC) and digital-analog conversion (DAC) circuits that consist of single-electron transistors (SETs) and metal-oxide-semiconductor (MOS) transistors. The SET/MOS hybrid ADC and DAC circuits possess the merits of the SET circuit and the MOS circuit. We obtain the SPICE macro-modeling code of the SET transistor by studying and fitting the characteristics of the SET with SPICE simulation and Monte Carlo simulation methods. The SPICE macro-modeling code is used for the simulation of the SET/MOS hybrid ADC and DAC circuits. We simulate the performances of the SET/MOS hybrid 3-b ADC and 2-b DAC circuits by using the H-SPICE simulator. The simulation results demonstrate that the hybrid circuits can perform analog-digital and digital-analog data conversion well at room temperature. The hybrid ADC and DAC circuits have advantages as-follows: 1) compared with conventional circuits, the architectures of the circuits are simpler; 2) compared with single electron transistor circuits, the circuits have much larger load capability; 3) the power dissipation of the circuits are lower than uW; 4) the data conversion rate of the circuits can exceed 100 MHz; and 5) the resolution of the ADC and DAC circuits can be increased by the pipeline architectures.

Transition films from amporphous to microcrystalline silicon and solar cells

A series of hydrogenated silicon films near the threshold of crystallinity was prepared by very high frequency plasmaenhanced chemical vapor deposition (VHF-PECVD)from a mixture of SiH4 diluted in H-2. The effect of hydrogen dilution ratios R = [H-2]/[SiH4] on the microstructure of the films was investigated. The photoelectronic properties and stability of the films were studied as a function of crystalline fraction. The results show that the diphasic films gain both the fine photoelectric properties like a-Si: H and high stability like mu w-Si:H. By using the diphasic silicon films as the intrinsic layer, p-i-n junction solar cells were prepared. Current-voltage (J-V) characteristics and stability of the solar cells were measured under an AM1.5 solar simulator. We observed a light-induced increase of 5.2% in the open-circuit voltage (V-oc) and a light-induced degradation of similar to 2.9% inefficiency.

Simulation of polarization effects in AlGaN/GaN heterojunction

A method for introducing polarization effects in the simulation of GaN-based heterojunction devices is proposed. A delta doping layer is inserted at the interface of heterojunction and the ionized donors or acceptors act as polarization induced fixed charges. Thus polarization effects can be taken into account in a traditional device simulator. Ga-face and N-face single AlGaN/GaN heterostructures are simulated, and the simulation results show that carrier confinement takes place only in the former structure while not in the latter one. The sheet density of free electrons at the interface of Ga-face AlGaN/GaN increases with the Al composition and the thickness of AlGaN. The consistence of simulation results with the experiments and calculations reported elsewhere shows that this method can effectively introduce polarization effects in the simulation of GaN-based heterojunction devices.

Experimental and numerical study on AlGaInAs/AlGaAs distributed feedback lasers with GaInP gratings

Ridge-waveguide AlGaInAs/AlGaAs distributed feedback lasers with lattice-matched GaInP gratings were fabricated and their light-current characteristics, spectrum and far-field characteristics were measured. On the basis of our experimental results we analyze the effect of the electron stopper layer on light-current performance using the commercial laser simulation software PICS3D. The simulator is based on the self-consistent solution of drift diffusion equations, the Schrodinger equation, and the photon rate equation. The simulation results suggest that, with the use of a 80 nm-width p-doped Al0.6GaAs electron stopper layer, the slope efficiency can be increased and the threshold current can be reduced by more than 10 mA.

Novel hybrid voltage controlled ring oscillators using single electron and MOS transistors

This paper proposes two kinds of novel hybrid voltage controlled ring oscillators (VCO) using a single electron transistor (SET) and metal-oxide-semiconductor (MOS) transistor. The novel SET/MOS hybrid VCO circuits possess the merits of both the SET circuit and the MOS circuit. The novel VCO circuits have several advantages: wide frequency tuning range, low power dissipation, and large load capability. We use the SPICE compact macro model to describe the SET and simulate the performances of the SET/MOS hybrid VCO circuits by HSPICE simulator. Simulation results demonstrate that the hybrid circuits can operate well as a VCO at room temperature. The oscillation frequency of the VCO circuits could be as high as 1 GHz, with a -71 dBc/Hz phase noise at 1 MHz offset frequency. The power dissipations are lower than 2 uW. We studied the effect of fabrication tolerance, background charge, and operating temperature on the performances of the circuits.

Numerical simulation of nc-Si : H/c-Si heterojunction solar cells

AMPS simulator, which was developed by Pennsylvania State University, has been used to simulate photovoltaic performances of nc-Si:H/c-Si solar cells. It is shown that interface states are essential factors prominently influencing open circuit voltages (V-OC) and fill factors (FF) of these structured solar cells. Short circuit current density (J(SC)) or spectral response seems more sensitive to the thickness of intrinsic a-Si:H buffer layers inserted into n(+)-nc-Si:H layer and p-c-Si substrates. Impacts of bandgap offset on solar cell performances have also been analyzed. As DeltaE(C) increases, degradation of VOC and FF owing to interface states are dramatically recovered. This implies that the interface state cannot merely be regarded as carrier recombination centres, and impacts of interfacial layer on devices need further investigation. Theoretical maximum efficiency of up to 31.17% (AM1.5,100mW/cm(2), 0.40-1.1mum) has been obtained with BSF structure, idealized light-trapping effect(R-F=0, R-B=1) and no interface states.

Performance of an embedded optical vector matrix multiplication processor architecture

An embedded architecture of optical vector matrix multiplier (OVMM) is presented. The embedded architecture is aimed at optimising the data flow of vector matrix multiplier (VMM) to promote its performance. Data dependence is discussed when the OVMM is connected to a cluster system. A simulator is built to analyse the performance according to the architecture. According to the simulation, Amdahl's law is used to analyse the hybrid opto-electronic system. It is found that the electronic part and its interaction with optical part form the bottleneck of system.