Design and Characterization of Evanescently Coupled Uni-Traveling Carrier Photodiodes with a Multimode Diluted Waveguide Structure

A new evanescently coupled uni-traveling carrier photodiode (EC-UTC-PD) is designed, fabricated and characterized, which incorporates a multimode diluted waveguide structure and UTC active waveguide structure together. A high responsivity of 0.68A/W at 1.55-mu m without an anti-reflection coating, a linear photocurrent responsivity of more than 21 mA, and a large-1 dB vertical alignment tolerance of 2.5 mu m are achieved.

A Prototype X-ray Framing Camera With Variable Exposure Time Based on Double-Gated Micro-Channel Plates

We present a novel X-ray frame camera with variable exposure time that is based on double-gated micro-channel plates (MCP). Two MCPs are connected so that their channels form a Chevron-MCP structure, and four parallel micro-strip lines (MSLs) are deposited on each surface of the Chevron-MCP. The MSLs on opposing surfaces of the Chevron-MCP are oriented normal to each other and subjected to high voltage. The MSLs on the input and output surfaces are fed high voltage pulses to form a gating action. In forming two-dimensional images, modifying the width of the gating pulse serves to set exposure times (ranging from ps to ms) and modifying the delay between each gating pulse serves to set capture times. This prototype provides a new tool for high-speed X-ray imaging, and this paper presents both simulations and experimental results obtained with the camera.

场发射(FED)用荧光粉的研制与改性

场发射平板显示器（Field Emission Displays, FED）是一种新发展起来的平板显示器，由于其在亮度、视角、响应时间、工作温度范围、能耗等方面具有优良的特性，成为近年新型显示器研究的热点之一。为实现高效的FED红、绿、蓝全色显示，荧光粉在其中起着十分重要的作用。制备性能优良的场发射用彩色荧光粉是决定将来FED技术成功与否的关键因素之一。 本论文研究的内容包括场发射(FED)用荧光粉的研制和改性工作。在场发射(FED)用荧光粉研制方面，采用溶胶-凝胶方法，制备了一系列新型场发射(FED)用荧光粉，包括稀土离子激活的镓酸镧 [(LaGaO3: Re3+ (Re = Eu, Tb, Dy, Tm, Sm)]体系、铟酸钙[(CaIn2O4: Re3+ (Re = Eu, Pr, Tb, Dy,)]体系、铟酸锶[(SrIn2O4: Re3+ (Re = Pr, Tb, Dy)]体系、镓酸镥[Lu3Ga5O12:Re3+ (Re = Eu, Tb，Pr)]体系，并研究了Pr, Sm, Eu, Tb, Dy, Tm等稀土离子在这些基质中的光致发光、低压阴极射线发光性质和能量传递等性质。在荧光粉的改性方面，采用喷雾热解法制备了Sr2CeO4球形场发射用荧光粉，研究了喷雾前驱体溶液中，聚乙二醇浓度、金属离子浓度、烧结温度对形貌及发光性能的影响；采用溶胶－凝胶方法成功将SiO2表明包覆一层CaTiO3:Pr3+, Y3Al5O12:Ce3+/Tb3+荧光粉，得到单分散，球形形貌，分布均匀，具有核/壳结构的球形荧光粉；另外研究了不同的制备方法对Ga2O3:Dy3+荧光粉的发光性能的影响。所得样品用XRD、FTIR、SEM、TEM、漫反射光谱、光致发光(PL)光谱、荧光寿命曲线、低压阴极射线(CL)光谱等进行表征。 在紫外光激发下，稀土离子激活的镓酸镧彩色荧光粉有基质(LaGaO3)的发射和稀土离子(Eu3+, Tb3+, Dy3+, Tm3+, Sm3+)的特征发射，研究表明在基质和稀土离子之间存在能量传递，其能量传递效率因离子而异。在阴极射线激发下，样品仅有稀土离子(Eu3+, Tb3+, Dy3+, Tm3+, Sm3+)的特征发射。如：LaGaO3: Eu3+发红光，LaGaO3: Dy3+发白光，LaGaO3: Tm3+发蓝光，LaGaO3: Sm3+发黄光，LaGaO3: Sm3+,Tb3+发白光。LaGaO3: Tb3+的发光颜色可通过不同Tb3+的掺杂浓度从蓝光到绿光进行调控。在相同的激发条件下，所制备的蓝光发射的LaGaO3: Tb3+和LaGaO3: Tm3+荧光粉与商业FED用蓝粉(Y2SiO5: Ce3+，日亚化学工业株式会社，NP-1047)相比具有更好的色纯度和更高的发光效率；所制备的黄光发射的LaGaO3: Sm3+荧光粉与商业低压黄色荧光粉((Zn,Cd)S: Ag，日亚化学工业株式会社，NP-1020)相比，色纯度接近，但具有更高的发光效率。并首次实现了单一基质中白光发射(LaGaO3: Sm3+,Tb3+), 所制备的稀土离子激活的镓酸镧彩色荧光粉[(LaGaO3: Re3+ (Re = Eu, Tb, Dy, Tm, Sm )]在场发射器件有潜在的应用。 在稀土离子掺杂的Sr/CaIn2O4荧光粉体系中，在基质Sr/CaIn2O4和掺杂离子Pr3+/Tb3+/Dy3+存在高效能量传递。基质Sr/CaIn2O4吸收能量向激活离子Pr3+/ Tb3+/Dy3+传递，发射为稀土离子Pr3+/Tb3+/Dy3+的特征发射，发光强度、荧光寿命等符合应用要求，在低压电子束激发下，Sr/CaIn2O4: Pr3+/Tb3+/Dy3+荧光粉为稀土离子的特征发射，其低压阴极射线发光(CL)光谱与光致发光(PL)发射光谱一致，CL强度随激发电压，电流密度增加而增强。 对于CaIn2O4:Eu3+荧光粉，进一步研究表明CaIn2O4:Eu3+荧光粉的光致发光和阴极射线发光颜色可以通过掺杂不同浓度的Eu3+从白光，黄光，到红光进行调控。低浓度掺杂发白光，高浓度掺杂发红光，适当的浓度发黄光。 在Lu3Ga5O12:Re3+ (Re = Eu, Tb，Pr)荧光粉体系中，在紫外（UV）和低压阴极射线激发下，所制备的荧光粉Lu3Ga5O12: Eu3+, Lu3Ga5O12: Pr3+为稀土离子Eu3+, Pr3+的特征发射，分别发黄光和绿光。Lu3Ga5O12:Tb3+的发光颜色因Tb3+掺杂浓度不同而不同，低浓度掺杂发蓝光，高浓度发绿光。 Sr2CeO4荧光粉在UV及低压阴极射线激发下发出强烈蓝光，源于配体到金属离子电荷迁移带跃迁(Ce4+-O2-)。其阴极射线发光强度与电压及灯丝电流呈良好的线性关系。 采用溶胶－凝胶方法的核壳结构的SiO2@CaTiO3:Pr3+和SiO2@Y3Al5O12: Ce3+/Tb3+荧光粉, FESEM和TEM结果表明这种核壳结构的发光材料表面致密，厚度均匀，保持了单分散SiO2微球的形貌特征。在UV及低压阴极射线激发下，SiO2@CaTiO3:Pr3+呈强红色发射，源于Pr3+ 的1D2—3H4 (612 nm)跃迁；SiO2@Y3Al5O12:Ce3+和SiO2@Y3Al5O12:Tb3+ 分别发黄绿光和绿光，源于Ce3+的5d-4f和Tb3+的5D4-7FJ (J = 6, 5, 4, 3)跃迁。PL强度可以通过包覆次数调控，CL强度随激发电压及灯丝电流增加而增强。 在Ga2O3:Dy3+荧光粉体系中，采用了溶胶-凝胶，氨水共沉淀，和高温固相法制备了Ga2O3:Dy3+荧光粉并比较了他们的结晶行为，形貌，光致发光和低压阴极射线发光性能。溶胶-凝胶法制备由于原料在分子层次上混合，可以得到纯相，氨水共沉淀和高温固相法原料不如溶胶凝胶法混合均匀，很难得到纯相。溶胶-凝胶和氨水共沉淀所得荧光粉为纳米级别大小，分别呈球形和玉米棒形状；高温固相法微米级别且呈不规则形状。Ga2O3向Dy3+传递能量效率依次按溶胶-凝胶，氨水共沉淀，和高温固相法逐渐降低。在紫外光激发下，分别发白光，蓝白光，蓝光。其低压阴极射线发光与光致发光类似。相比之下，溶胶-凝胶法制备Ga2O3:Dy3+荧光粉比氨水共沉淀和高温固相法制备要好。

Rashba electron's ballistic transport in two-dimensional quantum waveguide

The ballistic transport of Rashba electrons in a straight structure in two-dimensional electron gas is studied. It is found that there is no mixing between the wave functions of spin up and spin down states, and the transfer matrix is independent for the spin in every interface. The influence of the structure and Rashba coefficient on the electron transport is investigated. Our results indicate that the transmission probabilities are independent of the sign and magnitude of the Rashba coefficient and it depends on the shape of the structure, especially the stub width. The antiresonance is found, where the quasiconfined state is formed in the center part of the structure.

InGaAsP-InP Square Microlasers With a Vertex Output Waveguide

InGaAsP-InP square microlasers with a vertex output waveguide are fabricated by planar processes, and the etched sidewalls of the lasers are confined by insulating layer SiO2 and p-electrode TiAu metals. For a square microlaser with a side length of 30 mu m and a 2-mu m-wide output waveguide, a continuous-wave threshold current is 26 mA at room temperature and output power is 0.72 mW at 86 mA. The mode interval of 21 and 7.4 nm is observed for the microlasers with the side length of 10 and 30 mu m, respectively. Finite-difference time-domain (FDTD) simulations indicate that the lasing modes have incident angles of about 45 degrees at the boundaries of the resonator. In addition, square resonators surrounded by air, SiO2-Ti-Au, and SiO2-Au are compared by FDTD simulations.

AlGaInAs-InPMicrocylinder Lasers Connected With an Output Waveguide

AlGaInAs-InPmicrocylinder lasers connected with an output waveguide are fabricated by planar technology. Room-temperature continuous-wave operation with a threshold current of 8 mA is realized for a microcylinder laser with the radius of 10 mu m and the output waveguide width of 2 mu m. The mode Q-factor of 1.2 x 10(4) is measured from the laser spectrum at the threshold. Coupled mode characteristics are analyzed by 2-D finite-difference time-domain simulation and the analytical solution of whispering-gallery modes. The calculated mode Q-factors of coupled modes are in the same order as the measured value.

Effect of Si-Ge interdiffusion on the waveguide properties of SiGe-Si MQW photodetector

Because of Si-Ge interdiffusion in the Si-SiGe interface during the growth process, the square-wave refractive index distribution of a SiGe-Si multiple-quantum-web (MQW) will become smooth. In order to simulate the actual refractive index profile, a staircase approximation is applied. Based on this approach, the dispersion equation of the MQW waveguide is obtained by using a transfer matrix method, The effects of index changes caused by the interdiffusion on the optical field and the characteristics of the photodetector are evaluated by solving the dispersion equation, It is shown that the Si-Ge interdiffusion can result in a reduction of the effective absorption coefficient and the quantum efficiency.

An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser

A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs_0.9P_0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power.The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.

A High-Efficiency Fiber-to-Waveguide Coupler with Low Polarization Dependence Using a Diluted Waveguide in InP Substrate with a 1.55μm Wavelength

We propose a fiber-to-waveguide coupler for side-illuminated p-i-n photodiodes to obtain high responsivity and low polarization dependence that is grown on InP substrate and is suitable for surface hybrid integration in low cost modules. The fiber-to-waveguide coupler is based on a diluted waveguide,which is composed of ten periods of undoped 120nm InP/80nm InGaAsP （1.05μm bandgap） multiple layers. Using the semi-vectorial three dimensional beam propagation method （BPM） with the central difference scheme,the coupling efficiency of fiber-to-waveguide under different conditions is simulated and studied,and the optimized conditions for fiber-to-waveguide coupling are obtained. For TE-like and TM-like modes,the calculated maximum coupling efficiency is higher than 94% and 92% ,respectively. The calculated polarization dependence is less than 0. ldB,showing good polarization independence.

Analysis of directional emission in square resonator lasers with an output waveguide

Square microcavity laser with an output waveguide is proposed and analyzed by the finite-difference time-domain (FDTD) technique. For a square resonator with refractive index of 3.2, side length of 4 microns, and output waveguide of 0.4-micron width, we have got the quality factors (Q factors) of 6.7×10~2 and 7.3×10~3 for the fundamental and first-order transverse magnetic (TM) mode near the wavelength of 1.5 microns, respectively. The simulated intensity distribution for the first-order TM mode shows that the coupling efficiency in the waveguide reaches 53%. The numerical simulation shows that the first-order transverse modes have fairly high Q factor and high coupling efficiency to the output waveguide. Therefore the square resonator with an output waveguide is a promising candidate to realize single-mode directional emission microcavity lasers.

An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices

We present an all-e-beam lithography (EBL) process for the patterning of photonic crystal waveguides.The whole device structures are exposed in two steps. Holes constituting the photonic crystal lattice and defects are first exposed with a small exposure step size (less than 10nm). With the introduction of the additional proximity effect to compensate the original proximity effect, the shape, size, and position of the holes can be well controlled.The second step is the exposure of the access waveguides at a larger step size (about 30nm) to improve the scan speed of the EBL. The influence of write-field stitching error can be alleviated by replacing the original waveguides with tapered waveguides at the joint of adjacent write-fields. It is found experimentally that a higher exposure efficiency is achieved with a larger step size;however,a larger step size requires a higher dose.

Low-Microwave Loss Coplanar Waveguides Fabricated on High-Resistivity Silicon Substrate

Three kinds of coplanar waveguides （CPWs） are designed and fabricated on different silicon substrates---common low-resistivity silicon substrate （LRS）, LRS with a 3μm-thick silicon oxide interlayer, and high-resistivity silicon （HRS） substrate. The results show that the microwave loss of a CPW on LRS is too high to be used, but it can be greatly reduced by adding a thick interlayer of silicon oxide between the CPW transmission lines and the LRS.A CPW directly on HRS shows a loss lower than 2dB/cm in the range of 0-26GHz and the process is simple,so HRS is a more suitable CPW substrate.

An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter

A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.

Monolithically Integrated Laser Diode and Electroabsorption Modulator with Dual-Waveguide Spot-Size Converter Output

A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dualwaveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The devices emit in a single transverse and quasi single longitudinal mode with an SMSR of 25.6dB. These devices exhibit a 3dB modulation bandwidth of 15. 0GHz, and modulator DC extinction ratios of 16.2dB. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7. 3°× 18. 0°,respectively, resulting in a 3. 0dB coupling loss with a cleaved single-mode optical fiber.