掺杂Ce~(3+)的碱土氟化物功能材料的研究

Ce~(3+)是唯一d→f跃迁发光的三价稀土离子，4f层上只有一个电子，特征发射为d→~2F_(7/2)和d→~2F_(5/2)跃迁的两宽带，而d带受晶体场和共价性的影响较大，随基质类型和结构的不同，其d带下限上下移动，发光颜色便可以从紫外变成红色。另外，由于Ce~(3+)的发射光谱具有较宽的能量分布，因此，它又是一种良好的敏化剂。除此之外，由于Ce~(3+)具有较短的衰减时间(ns级)和超短余辉特性，所以Ce~(3+)激活的碱土氟化物和纯CeF_3又可望成为一种新型的无机闪烁体材料。过去，人们已对Ce~(3+)在不同类型的基质中的光谱性质和与其它离子间的能量传递现象进行了大量的研究，从中探讨了各种化学环境对Ce~(3+)的光谱特性的影响规律，并开发了一些新的功能材料，并在发光材料、超短余辉材料方面得到了应用，为了进一步探寻Ce~(3+)激活的物质在固体可调谐激光材料，闪烁体材料以及其它功能材料方面的潜在应用，进一步探索化学因素对Ce~(3+)的光谱特征的影响规律，我们选择碱土氟化物及复合氟化物作基质进行了研究。运用高温固相扩散反应用的方法合成了一系列掺杂不同浓度的Ce~(3+)的碱土氟化物及复合氟化物粉末样品，用stockbarger法生长了CaF_2:xCeF_3、CeF_3、KMgF_3Ce~(3+)、BaMgF_4:xCe~(3+)等单晶，探索了各自的生长工艺和条件，用X－射线粉末衍射仪及X－射线四园衍射仪分别对粉末样品及单晶的结构进行了检测，并运用不同激发源的荧光光谱仪测定了各样品的激发和发射光谱。在一系列碱土氟化物复合氟化物基质中着重研究了晶体场和共价性对Ce~(3+)的光谱性质的影响，指出了Ce~(3+)的发射峰值与取代阳离子，邻位阳离子的离子半径和电负性大小的关系；系统地研究了碱土氟化物及复合氟化物中Ce~(3+)的电荷补偿途径与发射中心的关系问题，明确指出：氟化物及复合氟化物基质中极易自发混入O~(2-)，充当电荷补偿剂，形成相对于Ce_F中心的发射峰位红移的新的发射中心，即“Ce-O”中心。在CaF_2:xCe~(3+)系列粉末样品中，通过对其光谱性质的研究发现了三种发射中心“Ce-F”、“Ce-O”中心和V_k色心，探讨了三者的转化规律，并证明了三种发射中心的产生都是不同的电荷补偿途径所致，且探讨了不同阳离子电荷补偿剂对 Ce~(3+)的光谱影响情况，指出了与Ce~(3+)半径相近的Na补偿效果最好。同时，我们还研究了CaF-2基质中Ce~(3+)的两发射中心（“Ce-F”、“Ce-O” ）与Tb~(3+)之间的能量传递现象，发现能量传递的效果及方向皆有一定的区别。在KMgF_3:Ce~(3+)中，通过单晶的生长，并用X－射线四园衍射仪的检测及光谱化学的方法，研究了Ce~(3+)在KMgF_3中的取代格位，推测Ce~(3+)只能占据KMgF_3中K~+的格位。在BaMgF_4:xCe~(3+)中，系统研究了合成温度，Ce~(3+)的掺杂浓度对其结构与光谱性能的影响情况，指出：不同的发射峰不是Ce~(3+)所占据的格位不同所致，而是不同的电荷补偿途径所导致的。合成温度和掺杂浓度越高，越有利于Ce_O中心的形成。通过研究CaF_2:Ce~(3+)单晶的γ辐照效应，我们发现：辐照剂量增加至一定的时候，在465nm处出现一新的发射带峰，且与原来固有的385nm处的发射带峰的强度比的对数随辐照剂量的增加而线性增加，重复性好，且恢复性能好。这为CaF_2:Ce~(3+)单晶作为一种大剂量的γ辐照剂量元件提供了一定的实验依据和可能性。另外，我们还研究了CaF_3, BaF_2:xCe~(3+)单晶的光谱性能与闪烁性能，丰富了这方面已有的实验数据，进一步证明了CeF_3具有快速闪烁性能；BaF_2:xCe~(3+)单晶与纯BaF_2相比，BaF_2本身的快、慢成份皆消失，而产生Ce~(3+)自身的5d→4f跃迁发射，其主导衰减时间与Ce~(3+)的浓度有关，即反比关系。BaF_2:Ce~(3+)闪烁体可望得到应用。

RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING

The rapid thermal annealing temperature dependence of the recrystallization, Yb migration and its optical activation were studied for Yb-implanted silicon. For the annealing regime 800-1000-degrees-C, the Yb segregates both at the crystal/amorphous interface and at the surface, which is different from the usual segregation of Er at the crystal/amorphous interface, and the efficiency of optical activation also increases with annealing temperature. However, the amorphous layer regrows completely and no photoluminescence is observed after the annealing at 1200-degrees-C.

RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE

The lattice damage accumulation in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+ irradiation at room temperature and 350-degrees-C has been studied. For irradiations at 350-degrees-C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10(15) Si/cm2 for GaAs, and is 5 x 10(15) Si/cm2 for Al0.8Ga0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350-degrees-C. The damage accumulation rate for 1 MeV Si ion implantation in Al0.3Ga0.7As/GaAs superlattice is less than that in GaAs.

OXYGEN ANALYSES IN HIGH-TC SUPERCONDUCTING FILMS BY MEV PROTON ELASTIC BACKSCATTERING

A technique for analysis of total oxygen contents in high-T(c) superconducting films is demonstrated. It uses elastic backscattering (EBS) of 1.5-2.5 MeV protons. By comparing the H EBS spectra from substrate materials, the absolute oxygen content in the films can be easily calculated. It is estimated that the analysis can be accurate to better than 5% for YBCO films with thicknesses from several hundred angstroms to several microns. Comparisons with RBS are given and advantages of this technique are shown.

GROWTH OF HIGH-QUALITY GALLIUM-ARSENIDE ON HF-ETCHED SILICON (001) BY CHEMICAL BEAM EPITAXY

HF etching followed by relatively low temperature (almost-equal-to 600-degrees-C) pretreatment is shown to provide a suitable substrate for the heteroepitaxial growth of GaAs on Si(100) by CBE using TEGa and AsH3 as sources. Rutherford backscattering (RBS), photoluminescence (PL), transmission electron microscopy (TEM), and Raman measurements show the low-defect nature of the GaAs epilayer.

CBE GROWTH OF GAAS/GAAS, GAAS/SI AND ALGAAS/GAAS USING TEG, ASH3 AND AMINE-ALANE PRECURSORS

The growth of high quality AlGaAs by CBE bas been limited by the high levels of carbon and oxygen contamination. The use of alane based precursors offers a significant reduction in such contamination. We report for the first time the CBE growth of AlxGa1-xAs from triethylgallium, dimethylethylamine-alane and arsine, and compare with. growth from triethylgallium, trimethylamine-alane and arsine. Some preliminary results of work on the CBE growth of GaAs on silicon will also be reported.

稀土掺杂ZnS纳米晶中稀土离子与纳米基质之间的能量传递

以甲基丙烯酸为表面包覆剂在水/醇溶液中合成了ZnS:Eu~3+, ZnS:Tb~3+纳米晶，用傅里叶变换红外光谱和X射线粉末衍射谱表征了样品的表面与晶型，样品均为立方闪锌矿型，没有出现与稀土离子相关的相；用光致发光和激发谱研究了样品中的发光过程，其中ZnS:Tb~3+纳米晶中存在纳米基质与Tb~3+之间的能量传递，并引起Tb~3+的特征发射。

Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers

The annealing of Mg-doped GaN with Pt and Mo layers has been found to effectively improve the hole concentration of such material by more than 2 times as high as those in the same material without metal. Compared with the Ni and Mo catalysts, Pt showed good activation effect for hydrogen desorption and ohmic contact to the Ni/Au electrode. Despite the weak hydrogen desorption, Mo did not diffuse into the GaNepilayer in the annealing process, thus suppressing the carrier compensation phenomenon with respect to Ni and Pt depositions, which resulted in the high activation of Mg acceptors. For the GaN activated with the Ni, Pt, and Mo layers, the blue emission became dominant, followed by a clear peak redshift and the degradation of photoluminescence signal when compared with that of GaN without metal.

笔式服装工艺设计系统的研究与实现

为了满足服装CAD的领域需求,提高服装工艺设计的效率,采用笔式用户界面进行草图勾画与知识编辑,通过对用户设计意图的隐式理解,利用几何约束求解技术,设计并实现了面向非计算机专业用户的基于笔交互的服装工艺设计系统.该系统与传统CAD软件相比改善了人机交互的方式,降低了用户的认知负担,提高了设计效率.

中国沙棘(Hippophae rhamnoides subsp. sinensis)不同种群对干旱胁迫的响应差异与干旱诱导蛋白的分析

沙棘广泛分布于亚欧大陆的温带地区和亚洲亚热带的高海拔地区。沙棘能适应多种生态环境，能耐受多种逆境(如干旱、低温、高温和盐害等)。在中国，沙棘常常被用作植被恢复中的先锋树种而大量栽培。本文以中国沙棘为试验材料，探索沙棘适应干旱机制，以及沙棘对干旱胁迫的适应机制是否存在种群间的差异，同时试图通过分析干旱胁迫下沙棘叶片蛋白质表达变化探索沙棘适应干旱胁迫的分子机理。 对三个分别来自低海拔湿润地区、低海拔干旱地区和高海拔湿润地区的中国沙棘种群进行干旱胁迫处理。干旱胁迫能提高根冠比，比叶面积，降低平均叶面积和总生物量，提高沙棘的抗氧化性酶活性、脯氨酸含量、脱落酸(ABA)含量、降低光合作用，提高长期用水效率。实验中的这两个低海拔种群比高海拔种群抵抗干旱的能力更强,不同的种群采用了不同的策略来耐受干旱胁迫和过氧化胁迫。 在2004 年度的实验中，干旱胁迫处理下，高海拔湿润种群(道孚种群)严重失水，生长也受到更大的抑制，非气孔因素在抑制光合作用方面占支配地位，抗坏血酸含量下降，ABA和脯氨酸含量增加幅度比九寨沟种群的要高，这可能是因为道孚种群严重失水而引起的；而低海拔湿润种群(九寨沟种群)的体内水分状况几乎不受干旱的影响，生长情况也较道孚种群要好。 在2005 年度的试验中，和高海拔湿润地区种群(道孚)相比较，低海拔干旱地区种群(定西)在叶片相对水含量、根冠比、抗氧化酶活性(过氧化氢酶、抗坏血酸过氧化物酶和谷胱甘肽过氧化物酶)、保护性物质(脯氨酸，脱落酸)含量等方面都要高，光能热耗散能力也更强，而且气体交换参数(气孔扩散阻力和胞间CO2浓度等)对干旱也更不敏感。 分析了干旱胁迫下沙棘叶片蛋白质表达的变化。共发现319 个蛋白质，有4 个蛋白在干旱胁迫下消失(Putative ABCtransporter ATP-binding protein 、Hypothetical proteinXP-515578，热激蛋白Hslu219 和一个没得到鉴定的蛋白)，4 个只在干旱胁迫下出现(没命名的蛋白质产物，对甲基苯-丙酮酸双加氧酶，NTrX 和一个没得到鉴定的蛋白)，46 个蛋白质的表达丰度变化显著，包括32 个干旱负调蛋白，14 个干旱正调蛋白(3 个Rubisco 的大亚基、J-type–co-chaperone Hsc20、putative protein DSM3645-2335、putative acyl-COA 脱氢酶、nesprin-2 和两个没有得到鉴定的蛋白质)。这些蛋白质参与了氮代谢调控、抗氧化行物质的合成、脂肪酸β－氧化、核骨架构造、[Fe-S]基团组装、物质跨膜运输、细胞分裂或作为分子伴侣和蛋白质酶起作用。putative ABC transporter ATP-binging protein、NtrX、nesprin-2 和Hslu 是本试验新发现的高等植物蛋白，我们主要从它们的保守结构域或在其他生物中的同源物来猜测它们的功能。实验结果为我们研究植物抗干旱机制提供了新线索和新视野。 Seabuckthorn (Hippophae rhamnoides L.) is widly distributed throughtout the temperatureresiogn of Europe and Asia and sub-tropical plateau zone of Asia. H. rhamnoides can adapatseveral different environments, and can tolerant several envioronmental stresses (e.g, lowtemperature, high temperature, drought and salty). It has been widely used in forest restoration asthe pioneer species in China. In present study, we applied H.rhamnoides subsp. Sinensis asexperimental materials to study its drought-tolerant mechanism, and expected to findpopulational difference in drought-tolerant mechanism that may exist among populations, and tryto get some insight in drought-tolerant mechanism of it at morecular level through analyzing thechange of leaf protein expression. Three populations from high altitude wet zone, low altitude wet zone and low altitude arid znoe,respectively, were applied in our experiment, and were subjected to drought. Drought increasedthe root/shoot ratio(RS), special leaf area, long-term water use efficinency, activity of antioxidantenzymes, proline content and abscisic acid (ABA) content, declined the net photosynthesis rate(A), average leaf area (ALA), total biomass (TB). Both two low altitude populations were moredrought-tolerant than the high altitude population, and different population applied differentstratedgies to tolerant oxidant stress and drought stress. The results of the exprement in 2004 showed that Daofu population was more drought-sensitivethan Jiuzhai population. Under drought conditions, leaf relative water content (RWC) greatlydecreased in Daofu population, but not in Jiuzhai population. The large loss of water in Daofupopulation resulted in a limitation on A mainly caused by non-stomatal factors, severer suppression in growth rate and a significant reduction in ascorbic acid (AsA) content, comparedwith Jiuzhai population. The greater increase in content of ABA and proline in Daofu populationmay be also induced by large loss in water, so that enable plants to cope with sever drought. In the exprement of 2005, drought significantly increased RS, activities of catalase (CAT),peroxidase (POD), glutathione peroxidase (GPX) and ascorbate peroxidase (APX), and alsosignificantly increased ABA and proline contents. On the other hand, compared with Daofupopulation, drought induced larger RS and activities of CAT, GPX and APX, and higher ABAcontent in Dingxi population, whereas gas exchange traits, e.g., stomatal limitation value (LS) andintercellular CO2 concentration (Ci), were less responsive to drought in Dingxi population thanthose in Daofu population. All these factors enable Dingxi population to tolerant drought betterthan Daofu population. The leaf protein profile of seabuchthorn subjected to drought was analyzed. Altogether 319proteins were detected in well-watered sample, four proteins disappeard by drought (putativeABCtransporter ATP-binding protein, hypothetical protein XP-515578, Hslu219and aunidentified protein), four only appeared under drought (a probable nitrogen regulation protein(NtrX), a 4-hydroxyphenylpyruvate dioxygenase , an unnamed protein product and an identified protein), 32 drought down-regulated proteins, and 14 drought up-regulated proteins (nine wereidentified: three large subunits of Rubisco, a hypothetical protein DSM3645-23351, a putativeacyl-COA dehydrogenase, a nesprin-2, a J-type-co-chaperone HSC20 and two unmatchedproteins). These proteins may involve in β-oxidation, cross-membrane transport, cell division,cytoskeleton stabilization, iron-sulfur cluster assembly, nitrogen metabolism regulation andantioxidant substance biosynthesis or function as molecular chaperone or protease. Four proteins(a putative ABC transporter ATP-binging protein, NtrX, nesprin-2, Hslu) were new found in highplants, and their functions were estimated from their conserved domain or their homologues inother organism. Our results provided new clue and new insight for us to study thedrought-tolerant mechanism in plants.

重离子诱导人舌鳞癌细胞凋亡和Bax/Bcl-2蛋白表达的变化

In order to investigate the effect of carbon ion irradiation on apoptosis and Bax/Bcl-2 expression inhuman tongue carcinoma cells, exponentially growing human tongue carcinoma cells (Tb) cultured in vitro were irradiated with 0, 0.5, 1.0, 2.0 or 4.0 Gy of 12C6+ ions respectively. Survival rate of irradiated cells at various doses were measured by MTT assay. The nucleus changes of apoptosis and necrosis of cells stained by Hochest/PI were observed through fluorescence microscope. The cell cycle changes were detected by flow cytometry (FCM). The expressions of Bax and Bcl-2 were detected by Western blot analysis. The results show that the viability of Tb cells decreases gradually with increment of irradiation doses of carbon ions. The proportions of apoptosis cells in the irradiated groups are significantly higher than those in the control group. There is a positive correlation between irradiation doses and retardation strength in G2 /M phase at 24 h after irradiation (P<0.05). And the expressions of Bax and bcl-2 are significantly up-regulated and down-regulated respectively by 12C6+ ion irradiation. It can be concluded from above that cell apoptosis induced by heavy ion with high-LET may be mediated through the Bax/Bcl-2 expression pathway. 探讨重离子辐照对人舌鳞癌Tb细胞的凋亡及Bax/Bcl-2蛋白表达的影响。采用0、0.5、1.0、2.0、4.0 Gy重离子束辐照人舌鳞癌 Tb 细胞，应用 MTT 法检测细胞存活，流式细胞技术检测细胞周期变化，Hoechst33258/PI 复染法观察 Tb 细胞凋亡形态，并采用 Western-blot 法检测 Bax/Bcl-2 蛋白表达情况。结果发现，Tb细胞经12C6+离子束辐照后存活率显著下降，呈剂量依赖性的生长抑制；Tb细胞呈现蓝色荧光浓集成团的凋亡形态，且凋亡比例随辐照剂量增加；G2/M 期细胞百分数随照射剂量增加而增加（P＜0.05） 。Western-blot结果显示 Bax 蛋白表达水平随辐照剂量逐渐上升，但在 4 Gy 组其表达不再增高，Bcl-2 蛋白在 1.0、2.0、4.0 Gy组随剂量增大呈下降趋势。以上结果提示重离子束辐照对 Tb 细胞有抑制作用，Bax/Bcl-2 蛋白表达是重离子治癌的机制之一。

重离子诱导人舌鳞癌细胞凋亡和Bax/Bcl-2蛋白表达的变化

探讨重离子辐照对人舌鳞癌Tb细胞的凋亡及Bax/Bcl-2蛋白表达的影响。采用0、0.5、1.0、2.0、4.0Gy重离子束辐照人舌鳞癌Tb细胞,应用MTT法检测细胞存活,流式细胞技术检测细胞周期变化,Hoechst 33258/PI复染法观察Tb细胞凋亡形态,并采用Western-blot法检测Bax/Bcl-2蛋白表达情况。结果发现,Tb细胞经12C6+离子束辐照后存活率显著下降,呈剂量依赖性的生长抑制;Tb细胞呈现蓝色荧光浓集成团的凋亡形态,且凋亡比例随辐照剂量增加;G2/M期细胞百分数随照射剂量增加而增加(P<0.05)。Western-blot结果显示Bax蛋白表达水平随辐照剂量逐渐上升,但在4Gy组其表达不再增高,Bcl-2蛋白在1.0、2.0、4.0Gy组随剂量增大呈下降趋势。以上结果提示重离子束辐照对Tb细胞有抑制作用,Bax/Bcl-2蛋白表达是重离子治癌的机制之一。

重离子束与X射线辐照对人舌鳞癌细胞周期影响的比较

[目的]研究重离子和X射线辐照对人舌鳞癌Tb细胞周期影响的规律。[方法]采用X射线和离子束分别辐照人舌鳞癌Tb细胞,X射线照射剂量为0、2、4、6、8Gy;重离子照射剂量为0、0.5、1、2.0、4.0Gy。PI荧光探针标记,流式细胞仪检测不同剂量组受照后在6h、12h、24h的细胞周期变化。[结果]人舌鳞癌Tb细胞在X射线照射后,2.0Gy组激活G1期检测点,而4.0、6.0、8.0Gy组激活G2期检测点。重离子照射后,Tb细胞G2/M期阻滞明显增加,阻滞程度具有剂量和时间依赖性,并且0.5、1Gy组细胞在12～24h时间点出现"崩溃"现象,细胞阻滞解除;2Gy和4Gy组细胞表现为明显的G2/M阻滞,未出现"崩溃"现象。在2Gy辐照时对细胞G2期阻滞率达到70%,相当于6GyX射线辐照。[结论]重离子和X射线对人舌鳞癌细胞周期影响不同,小剂量重离子束具有较高的生物学效应。

Theoretical Analysis and New Formulae for Half-Lives of Proton Emission

The proton radioactivity half-lives of spherical proton emitters are calculated by the cluster model with the contribution of a centrifugal potential barrier considered separately. The results are compared with the experimental data and other theoretical data, and good agreement is found for most nuclei. In addition, two formulae are proposed for the proton decay half-life of spherical proton emitters through the least squares fit to the experimental data available, and could reproduce the experimental half-lives successfully.