964 resultados para fungal grown


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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Corn starch, partially hydrolyzed by fungal alpha-amylase was investigated by using thermal analysis, microscopy and X-ray diffraction. After enzymatic treatment lower degradation onset temperatures were observed. DSC analysis showed almost similar range of gelatinization temperature, however, the enthalpies of gelatinization increased for the partially hydrolyzed starch granules. According to the X-ray diffraction analysis, stronger cereal pattern peaks were recognized after enzymatic digestion. The results suggested that the hydrolysis was more pronounced in the amorphous part of the starch granules.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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A study of decomposition of coffee pulp (from Guatemala City, Guatemala) was carried out with several inocula. Fresh and pressed pulps were studied in field and laboratory experiments. Results showed that the best inoculum among the eight examined in the experiments was the fungus Trichoderma viride, the only one not isolated from the coffee pulp itself. This inoculum, together with pumice, accelerated the decomposition of coffee pulp at ambient temperature during a 45-day test period. © 1985.

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In order to determine conditions that may provide greater solubilization of insouluble phosphate, the fungus Aspergillus niger was grown in a stationary culture containing modified citrate medium supplemented with 800 mg fluorapatite per litre. Solubilization of insouluble phosphate increased with fungal growth, reaching a maximum after 11 days of culture. Soluble phosphate levels were correlated with pH of the culture medium but not with titratable acidity values, probably due to the metabolic activity of the fungus resulting from consumption of sugar in the culture medium. Fructose, glucose, xylose, and sucrose were the carbohydrates that favoured fluorapatite solubilization the most when compared with galactose and maltose. Although increasing fructose concentrations in the culture medium favoured mycelial growth, increased total acidity and a fall in pH, soluble phosphate levels were reduced, probably owing to consumption by the rapidly growing fungus. Among the nitrogen sources tested, ammonium salts favoured the production of larger amounts of soluble phosphate than organic nitrogen (peptone or urea) or nitrate, corresponding to the lowest pH and highest titratable acidity values obtained. © 1988 Springer-Verlag.

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Tunicamycin, which inhibits N-glycosylation of proteins, was used as a tool to determine the type of linkage which occurs in glycoprotein antigens of Aspergillus fumigatus. When A. fumigatus extracts were electrophoretically separated and blotted then probed with anti-Aspergillus patients' sera, differences in antigenic profiles were noted when tunicamycin-treated samples were compared with controls. Tunicamycin had no detectable effect on the cellular proteinases of A. fumigatus, most of which are glycosylated. Some enzymatic components were lacking when extracellular proteinases were compared with those of control samples. The major catalase component of A. fumigatus is a concanavalin A (Con A)-binding glycoprotein. In cultures grown in the presence of tunicamycin, partiallydeglycosylated catalase components were obtained which could be distinguished from the native catalase by their altered mobilities in polyacrylamide gels. The effect of deglycosylation on catalase antigens was monitored using an antiserum raised to a ConA-binding fraction of A fumigatus mycelium. These antibodies bound both to the native glycoprotein and the partially deglycosylated material. These latter two were largely unaffected when incubated with an antiserum raised to a non-ConA-binding fraction of A. fumigatus which is essentially carbohydrate free. The ability to produce partially-glycosylated antigens of A. fumigatus offers a model to study the effect of basic structural modifications on both the enzymatic and antigenic activities of these molecules.

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The interactions of two fungal biocontrol agents, Alternaria cassiae and Pseudocercospora nigricans, and soybean planting density on sicklepod mortality and dry weight were studied in the field over 2 yr. The experimental field was divided into three equal areas: one without soybean and two where the soybean was sown in densities of 20 and 36 seeds per meter row with a 0.95-m row spacing. The fungi were sprayed alone or in a mixture at three growth stages of sicklepod plants grown at three levels of crop interference resulting from the three soybean planting densities. The fungal treatments were: an untreated control, A. cassiae (105 spores/m2), P. nigricans (3.3 g mycelium/m2), and the mixture of these two fungi. Sicklepod was at the cotyledonary leaf, two-leaf, and four-leaf stages when treated. Alternaria cassiae was most effective in reducing both sicklepod survival and dry weight. The mixture of P. nigricans and A. cassiae was generally comparable to but not better than A. cassiae alone in killing the weed (mortality) and reducing its growth (dry weight). Soybean density did not have significant effects on the mortality or the dry weight of sicklepod. Thus, there is no advantage to combining the highly effective biocontrol agent A. cassiae with the less effective P. nigricans or with soybean interference to control sicklepod. However, the results validate the efficacy of A. cassiae by itself as a bioherbicide.

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Thin films of undoped and Sb-doped (2 atg%) SnO2 have been prepared by sol-gel dip-coating technique on borosilicate glasses. Variation of photoconductivity excitation with wavelength and optical absorption indicate indirect bandgap transition with energy of ≅ 3.5 eV. Conductance as function of temperature indicates two levels of capture with 39 and 81 meV as activation energies, which may be related to an Sb donor and oxygen vacancy respectively. Electron trapping by these levels are practically destroyed by UV photoexcitation (305 nm) and heating in vacuum to 200°C. Gas analysis using a mass spectrometer indicates an oxygen related level, which may not be desorbed in the simpler O2 form.

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We used photoluminescence spectroscopy in order to investigate the carriers escape mechanisms in In0.15Ga0.85As/GaAs quantum wells grown on top of nominal (001) and 2°-, 4°-and 6°-off (001) towards (111)A GaAs substrates. We described the escape processes using two models that fit the Arrhenius plot of the integrated PL intensity as a function of the inverse of the sample temperature. In the first model, we considered equal escape probability for electrons and holes. In the second one, we assumed that a single type of carrier can escape from the well. At high temperature, the first model fits the experimental data well, whereas, between 50 K and 100 K, the second model has to be taken into account to describe the data. We observed that the escape activation energy depends on the misorientation angle. An unusual behavior was noted when the full width at half maximum of the photoluminescence main emission was plotted as a function of the sample temperature. We showed that the escape process of the less-confined carriers drives this behavior. © 1999 Academic Press.

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Polymeric precursor solution was used to deposit LiNbO3 thin films by dip coating on sapphire substrates. The effects of processing variables, such as heat treatment conditions and number of deposited layers, on crystallinity and morphology of the final films were investigated. X-ray diffraction patterns show the oriented growth of the films. The rocking curves, obtained around the (006) LiNbO3 peak, revealed that the shape peak and the FWHM value were influenced by the processing variables. According to these parameters, some films presented very homogeneous dense and smooth surfaces, as shown by the SEM and AFM studies.

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Thin films of undoped and Sb-doped SnO2 have been prepared by a sol-gel dip-coating technique. For the high doping level (2-3 mol% Sb) n-type degenerate conduction is expected, however, measurements of resistance as a function of temperature show that doped samples exhibit strong electron trapping, with capture levels at 39 and 81 meV. Heating in a vacuum and irradiation with UV monochromatic light (305 nm) improve the electrical characteristics, decreasing the carrier capture at low temperature. This suggests an oxygen related level, which can be eliminated by a photodesorption process. Absorption spectral dependence indicates an indirect bandgap transition with Eg ≅ 3.5 eV. Current-voltage characteristics indicate a thermionic emission mechanism through interfacial states.

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Ferroelectric SrBi2Nb2O9 (SBN) thin films were prepared by pulsed laser deposition (PLD) on Pt/Ti/SiO2/Si(100) using a sequential deposition process from two SBN and Bi2O3 targets. This route allows for bismuth enrichment of the film composition in order to improve the ferroelectric characteristics. Structural and microstructural characterizations were performed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The composition of films and targets was determined by energy dispersive X-ray spectrometry (EDX). The deposition temperature, which provided well-crystallized layered perovskite SBN phase films in situ, was found to be 700°C. The results were compared with those obtained for SBN films deposited at 400°C and then crystallized ex situ. For an ex situ annealing temperature of 750°C, a remanent polarization value (Pr) of 23.2 μc/cm2 and a coercive field (Ec) of 112 kV/cm were measured. © 2001 Elsevier Science Ltd. All rights reserved.