Physicochemical properties of maize starch obtained from intermittent milling and dynamic steeping (IMDS) under various steeping conditions

Physicochemical properties of maize starch obtained under different steeping conditions by intermittent milling and dynamic steeping process (IMDS) were studied. Brazilian dent maize (hybrid XL 606) was milled using a 2x2x3 factorial experimental design with two lactic acid levels (0.0 and 0.55%, v/v), two SO2 levels (0.05 and 0.1%, w/v), and three temperatures (52, 60, and 68degreesC). Properties of starch obtained by conventional wet-milling process (36 hr at 52degreesC, 0.55% lactic acid, and 0.2% SO2) were used for comparison. Starch protein content and solubility increased with presence of lactic acid, while swelling power decreased. Higher SO2 concentration (0.1%) had the same effect as lactic acid on some properties. Steeping temperatures of 60 and 68degreesC increased solubility and most of the thermal properties but reduced swelling power, suggesting stronger starch annealing during IMDS at these temperatures. Some thermal changes on starch granules were visualized by scanning electron microscopy (SEM) at 60 and 68degreesC. Amylose content as well as pasting properties were affected by steeping factors and interactions. Starches from IMDS and conventional wet-milling processes were similar in most properties, indicating that IMDS provides starch with quality similar to that from conventional milling.

Structural characterization of blends containing both PVDF and natural rubber latex

Films containing different volumes of latex of natural rubber (NR) in a fixed mass of poly (vinylidene fluoride) (PVDF) powder were fabricated by compressing under annealing a mixture of both materials without using any solvent. This is an important issue keeping in mind that these films have to be used in the future as biomaterials in different applications once the solvents that are used to dissolve the PVDF become toxic to human. The films with different percentage of latex in PVDF were characterized using microRaman scattering and Fourier transform infrared absorption (FTIR) spectroscopies, thermomechanical techniques using thermogravimetry (TG), differential scanning calorimetry (DSC), dynamical-mechanical analysis (DMA) and scanning electron microscopy (SEM). The results showed that the latex of NR and PVDF do not interact chemically, leading to the formation of a polymeric blend with high thermal stability and mechanical properties suitable for applications involving bone (prostheses, for instance). Besides, the results recorded using the micro-Raman technique revealed that for a fixed amount of PVDF the higher the amount of latex in the blend, the better the miscibility between both materials. Copyright (c) 2005 John Wiley & Sons, Ltd.

Microwave synthesis of calcium bismuth niobate thin films obtained by the polymeric precursor method

The crystal structure, surface morphology and electrical properties of layered perovskite calcium bismuth niobate thin films (CaBi2Nb2O9-CBN) deposited on platinum coated silicon substrates by the polymeric precursor method have been investigated. The films were crystallized in a domestic microwave and in a conventional furnace. X-ray diffraction and atomic force microscopy analysis confirms that the crystallinity and morphology of the films are affected by the different annealing routes. Ferroelectric properties of the films were determined with remanent polarization P-r and a drive voltage V-c of 4.2 mu C/cm(2) and 1.7 V for the film annealed in the conventional furnace and 1.0 mu C/cm(2) and 4.0 V for the film annealed in microwave furnace, respectively. A slight decay after 10(8) polarization cycles was observed for the films annealed in the microwave furnace indicating a reduction of the domain wall mobility after interaction of the microwave energy with the bottom electrode. (C) 2006 Elsevier Ltd. All rights reserved.

Blue-green and red photoluminescence in CaTiO3 : Sm

Blue-green and red photoluminescence (PL) emission in structurally disordered CaTiO3:Sm (CT:Sm) powders was observed at room temperature with laser excitation at 350.7 nm. The perovskite-like titanate CT:Sm powders prepared by a soft chemical processing at different temperatures of annealing were structurally characterized by X-ray diffraction (XRD) and X-ray absorption near-edge structure (XANES). The results indicate that the generation of the broad PL band is related to order-disorder degree in the perovskitelike structure. (c) 2006 Elsevier B.V. All rights reserved.

Effect of preannealing on the morphology of LiTaO3 thin films prepared from the polymeric precursor method

Lithium tantalate (LiTaO3) thin films with 50:50 stoichiometry were deposited on silicon (100) substrates with two layers by the spin coating method using a polymeric organic solution. In order to study the influence of preannealing on the crystallinity, microstructure, grain size and roughness of the final film, two annealing procedures, slow preannealing and fast preannealing, were used. X-ray diffraction (XRD) results showed that LiTaO3 thin films are polycrystalline. It was observed by scanning electron microscopy (SEM) that the thin film, which had been thermally treated using slow preannealing, was characterized by a dense and homogeneous surface. The atomic force microscopy (AFM) studies showed that the roughness is strongly influenced by preannealing temperature. (C) 2003 Elsevier B.V. All rights reserved.

Synthesis and electrical characterization of CaBi2Nb2O9 thin films deposited on Pt/Ti/SiO2/Si substrates by polymeric precursor method

We report the successful deposition of CaBi2Nb2O9 (CBN) thin films on platinum coated silicon substrates by polymeric precursor method. The CBN thin films exhibited good structural, dielectric and CBN/Pt interface characteristics. The leakage current of the capacitor structure was around 0.15 A cm(-2) at an applied electric field of 30 kV cm(-1). The capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. The typical measured small signal dielectric constant and the dissipation factor at a frequency of 100 kHz were 90 and 0.053, respectively. The remanent polarization and the drive voltage values were 4.2 C cm(-2) and 1.7 V at an applied voltage of 10 V. No significant fatigue was observed at least up to 10(8) switching cycles. (c) 2005 Elsevier B.V. All rights reserved.

Low temperature synthesis and electrical properties of PbTiO3 thin films prepared by the polymeric precursor method

Ferroelectric PbTiO3 thin films were successfully prepared on a Pt(111)Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. This method allows low temperature (500 degrees C) synthesis and high electrical properties. The multilayer PbTiO3 thin films were granular in structure with a grain size of approximately 110-120 nm. A 380-nm-thick film was obtained by carrying out four cycles of the spin-coating/heating process. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses showed the surface of these thin films to be smooth, dense and crack-free with low surface roughness (=3.4 nm). At room temperature and at a frequency of 100 kHz, the dielectric constant and the dissipation factor were, respectively, 570 and 0.016. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behavior. The remanent polarization and coercive field for the films deposited were 13.62 mu C/cm(2) and 121.43 kV/cm, respectively. The high electrical property values are attributed to the excellent microstrutural quality and chemical homogeneity of thin films obtained by the polymeric precursor method. (C) 2000 Elsevier B.V. S.A. All rights reserved.

Preparation, microstructural and electrical characterization of SrTiO3 thin films prepared by chemical route

Polycrystalline SrTiO3 thin films having a cubic perovskite structure were prepared at different temperatures by the polymeric precursor method on platinum-coated silicon substrate. Crystalline films with uniform composition and thickness were prepared by spin-coating and the post-deposition heat treatment was carried out at different temperatures. The film showed good structural, dielectric, and insulating properties, Scanning electron microscopy (SEM) micrographs showed no occurrence of interdiffusion between the bottom electrode (platinum) and the film during post-annealing, indicating a stable interface between the SrTiO3 and the bottom electrode. The dielectric constant and dissipation factor at a frequency of 100 kHz were 250 and 0.01, respectively, for a 360 nm thick film annealed at 600 degreesC. The capacitance versus applied voltage characteristics showed that the capacitance was almost independent of the applied voltage. The I-V characteristics were ohmic in low fields and a Schottky emission and/or Poole-Frenkel emission were postulated in high fields. Room temperature leakage current density was found to be in the order of 10(-7) A/cm(2) for a 360 nm thick film in an applied electric field of about 100 kV/cm. The charge storage density of 36 fC/mum(2) was obtained in an applied electric field of about 100 kV/cm. (C) 2001 Published by Elsevier B.V. Ltd. All rights reserved.

Optimal capacitor placement in radial distribution networks

The capacitor placement (replacement) problem for radial distribution networks determines capacitor types, sizes, locations and control schemes. Optimal capacitor placement is a hard combinatorial problem that can be formulated as a mixed integer nonlinear program. Since this is a NP complete problem (Non Polynomial time) the solution approach uses a combinatorial search algorithm. The paper proposes a hybrid method drawn upon the Tabu Search approach, extended with features taken from other combinatorial approaches such as genetic algorithms and simulated annealing, and from practical heuristic approaches. The proposed method has been tested in a range of networks available in the literature with superior results regarding both quality and cost of solutions.

Ferroelectric characteristics of BiFeO3 thin films prepared via a simple chemical solution deposition

BiFeO3 (BFO) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by using a polymeric precursor solution under appropriate crystallization conditions. The capacitance dependence on voltage is strongly nonlinear, confirming the ferroelectric properties of the films resulting from the domain switching. The leakage current density increases with annealing temperature. The polarization electric field curves could be obtained in BFO films annealed at 500 degrees C, free of secondary phases. X-ray photoelectron spectroscopy spectra of films annealed at 500 degrees C indicated that the oxidation state of Fe was purely 3+, demonstrating that our films possess stable chemical configurations. (c) 2007 American Institute of Physics.

Microstructural and morphological analysis of pure and Ce-doped tin dioxide nanoparticles

Structural morphological studies in pure and Ce-doped tin dioxide nanoparticles with high stability against particle growth were performed in samples, obtained using the polymeric precursor method and prepared at different annealing temperatures. A Ce-rich surface layer was used to control the particle size and stabilize SnO2 against particle growth. The formation of this segregated layer can contribute to a decreased surface energy, acting in the driving force, or reducing the surface mobility. Only the cassiterite SnO2 phase was observed below 1000 degreesC and a secondary phase (CeO2) was observed for the Ce-doped SnO2 at temperatures higher than 1000 degreesC, when de-mixing process occurs. The evolution of crystallite size, microstrain and morphology of the nanoparticles with annealing temperatures was investigated by X-ray diffraction (XRD), associated to Rietveld refinements, X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). (C) 2002 Elsevier B.V. Ltd. All rights reserved.

On epidote fission track dating

The use of epidote in fission track dating was abandoned since the beginning of the 1980s due to difficulties like absence of a standard etching procedure, obtainment of different closure temperatures and the percentage of the datable samples. The results become much more reproducible when restricting fission track analysis to a peculiar kind of track. We are also studying confined track length, what makes possible to obtain information about fossil track annealing. Fission tracks in epidote were successfully etched with 48% HF at 35 degrees C for 12.5 min. Dating samples by the external detector method was not possible due to problems in measuring the efficiency factor held between the number of fossil fission tracks and tracks induced in mica. Dating a sample from Brejui, RN, Brazil with the population method gave a corrected age of 510 +/- 69Ma, in agreement with published U/Th-Pb ages. From the fact that the fossil track length histogram was bimodal, we were able to infer that this sample registered a thermal episode during its history.These preliminary results indicate that epidote deserves further studies to establish whether it can be employed as a thermochronological tool. (c) 2005 Elsevier Ltd. All rights reserved.

Dielectric and fatigue properties of Pb(Zr0.53Ti0.47)O-3 thin films prepared from oxide precursors method

Fatigue is an important problem to be considered if a ferroelectric film is used for non-volatile memory devices. In this phenomena, the remanent polarization and coercive field properties degrades in cycles which increase in hysteresis loops. The reasons have been attributed to different mechanisms such as a large voltage applied on ferroelectric film in every reading process in Ferroelectric Random Access Memory (FeRAM) or memories for digital storage in computer, grain size effects and others. The aim of this work is to investigate the influence of the crystallization kinetics on dielectric and ferroelectric properties of the Pb(Zr0.53Ti0.47)O-3 thin films prepared by an alternative chemical method. Films were crystallized in air on Pt/Ti/SiO2/Si substrates at 700 degrees C for 1 hour, in conventional thermal annealing (CTA), and at 700 degrees C for 1 min and 700 degrees C 5 min, using a rapid thermal annealing (RTA) process. Final films were crack free and presented an average of 750 nm in thickness. Dielectric properties were studied in the frequency range of 100 Hz - 1 MHz. All films showed a dielectric dispersion at low frequency. Ferroelectric properties were measured from hysteresis loops at 10 kHz. The obtained remanent polarization (P-r) and coercive field (E-c) were 3.7 mu C/cm(2) and 71.9 kV/cm respectively for film crystallized by CTA while in films crystallized by RTA these parameters were essentially the same. In the fatigue process, the P, value decreased to 14% from the initial value after 1.3 x 10(9) switching cycles, for film by CTA, while for film crystallized by RTA for 5 min, P, decreased to 47% from initial value after 1.7 x 10(9) switching cycles.

Temperature dependence on the electrical properties of Ba(Ti0.90Zr0.10)O-3:2V ceramics

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Electrochemical behavior of cobalt oxide coatings on cold-rolled steel in alkaline sodium sulfate

The electrochemical behavior of a coating of cobalt oxide on cold-rolled steel in alkaline sodium sulfate was Studied using the electrochemical techniques of open-circuit potential measurements and electrochemical impedance spectroscopy. The coating was prepared at different annealing temperatures ranging from 350 to 750 degreesC and characterized by SEM, EDX and XRD. Below 550 degreesC the composition of the coating was basically of Co3O4. At 750 degreesC CoO was formed and big cracks appeared on the film exposing an inner layer of iron oxides. Analysis of the EIS data is very difficult because of the complexity of the interface structure. It can be inferred that the charge transfer resistance of the coatings prepared at 350 and 450 C were higher than those for the coatings prepared at temperatures above 550 degreesC. (C) 2002 Published by Elsevier B.V. Ltd.