低定额畦灌技术参数研究

基于有限水资源的农田补充灌溉,以寻求不产生深层渗漏的节水型地面畦灌灌水定额为目标,在陕西省杨陵区中壤土玉米地,开展了畦田规格和灌水技术要素对灌水效率和灌水均匀度影响的田间试验。通过水流推进、消退过程、土壤水分变化的测定,利用地面灌溉水流运动曲线拟合对畦灌条件下的最佳灌水技术要素组合进行了分析。结果表明:畦田规格和灌水技术要素对灌水效率和灌水均匀度具有明显影响,对于试验田块,田面坡度为1.5‰时,入畦单宽流量控制在3～6L/(m.s)范围内,畦宽2～3m,畦长50m左右,可达到较高灌水效率(Ea>80%)和灌水均匀度(DU>80%),并能将灌水定额控制在设计范围之内,实现畦田的小定额灌溉。

黄土高原子午岭林区6个典型群落优势种的热值和养分特征

能量流动、物质循环和信息传递共同构成了生态系统三大功能。能量是维持生态系统功能与过程的动力,Jordan(1971)认为能量比干物质更能反映出群落对自然资源(特别是太阳能)的利用情况。Long(1934)率先用热值来表示植物所含能量的多少,此后关于植物热值的研究工作逐渐展开。我国的植物热值研究始于20世纪80年代(杨福囤等,1983;祖元刚等,1986),主要集中在海南(林益明等,2000)、福建(林益明等,2004)、广东(任海等,1999)和浙江(郝朝运等,2006)等热带亚热带植物群落以及内蒙古羊草草原(鲍雅静等,2003),但有关黄土高原地区的植被热值研究尚未见报道。子午岭林区是黄土高原主要的天然次生林区,其植被主要是在弃耕地基础上逐渐恢复起来的(邹厚远等,2002)。由于自然因素与人为因素的影响,子午岭的植被在恢复时间上存在较大差异,形成了处于不同演替阶段的各种植被群落类型。本研究选取的6个代表性植被群落分别是沙棘(Hippophae rhamnoides)群落、山杨(Populus davidiana)群落、白桦(Betula platyphylla)群落、油松(Pinus tabulaeform...

子午岭地区植被演替过程中土壤养分及酶活性特征研究

选择植被自然恢复不同年限的阳坡梁坡地作为研究对象,采用时空互代法研究子午岭地区植被恢复过程中土壤养分和酶活性的变化。结果表明,植被恢复140 a内,不同土层土壤有机质含量、全氮含量、蔗糖酶活性、脲酶活性、碱性磷酸酶活性和过氧化氢酶活性增加,且表土层(0~20 cm)土壤养分含量和酶活性高于下层土壤(20~40 cm)。以裸露地为对照,土壤0~20 cm土层,有机质含量、全氮含量、蔗糖酶活性、脲酶活性、碱性磷酸酶活性和过氧化氢酶活性分别增加了23.8%~534.9%、9.3%~300.0%、213.6%~521.5%、40.4%~286.5%、22.7%~232.2%和3.2%~22.4%,土壤速效磷含量呈现波动变化,过氧化氢酶活性变化幅度比其他三种酶低。土壤有机质含量与全氮、速效磷含量密切相关;土壤蔗糖酶与土壤有机质、全氮均为极显著的相关关系(0.930/0.918);土壤脲酶活性与全氮含量相关系数最高(0.804);土壤碱性磷酸酶活性与有机质、全氮含量都呈极显著相关(0.977/0.984);土壤过氧化氢酶活性与全氮含量极显著相关,相关系数达0.996。

河南省HIV21 新近感染者耐药基因研究

目的　了解河南省艾滋病病毒Ⅰ型( HIV21) 新近感染者的耐药情况。方法　2006 年8 月- 2007 年6 月,在河南省艾滋病自愿咨询(VCT) 检测点发现的未进行抗病毒治疗的HIV21 感染者,以酶联免疫吸附试验初筛、 蛋白印迹试验确认HIV21 感染,BED2CEIA 方法检测新近感染。检出的新近感染样品进行基因型耐药检测,提取 血浆中RNA ,套式聚合酶链反应(Nested2PCR) 扩增HIV21 pol 基因区,PCR 产物双脱氧法测序,所得序列与Los Alamos HIV 标准株序列比对,构建系统进化树分析亚型;利用Stanford HIVdb Drug Resistance Database 分析耐 药相关突变(DRM) 和耐药情况。结果　共检出HIV21 新近感染39 例,扩增测序有34 例新近感染样品分析成功。 亚型分析结果为B′亚型32 例(9411 %) ,CRF01_AE 重组亚型1 例(219 %) ,C 亚型1 例(219 %) 。未发现蛋白酶抑 制剂( PI) 主要DRM ,检测到10 例(2914 %) 存在PI 次要DRM;未发现核苷类逆转录酶抑制剂(NRTI) 的DRM;3 例(818 %) 存在非核苷类逆转录酶抑制剂(NNRTI) 的DRM。耐药分析显示,有2 例(519 %) 对NNRTI 类药物耐 药。结论　目前河南省HIV21 新近感染人群中耐药状况处于中等水平,有必要加强HIV21 的耐药监测。

TEMPERATURE EFFECT ON POROUS SILICON LUMINESCENCE

A theoretical surface-state model of porous-silicon luminescence is proposed. The temperature effect on the PhotoLuminescence (PL) spectrum for pillar and spherical structures is considered, and it is found that the effect is dependent on the doping concentration, the excitation strength, and the shape and dimensions of the Si microstructure. The doping concentration has an effect on the PL intensity at high temperatures and the excitation strength has an effect on the PL intensity at low temperaturs. The variations of the PL intensity with temperature are different for the pillar and spherical structures. At low temperatures the PL intensity increases in the pillar structure, while in the spherical structure the PL intensity decreases as the temperature increases, at high temperatures the PL intensities have a maximum for both models. The temperature, at which the PL intensity reaches its maximum, depends on the doping concentration. The PL spectrum has a broader peak structure in the spherical structure than in the pillar structure. The theoretical results are in agreement with experimental results.

Collective excitations in the coupled quantum wires

The dielectric response of an electron system composed of an array of parallel quantum wires with weak coupling and strong coupling are studied, and the dispersions of the collective excitations and the single particle excitations (SPE) as functions of wave-vectors are given. It is found that for the nearly isolated quantum wires with several subbands occupation, there are a series of intra-subband collective excitations between corresponding intra-subband SPE spectra. There also exist inter-subband collective excitations when q(x) not equal 0 (q(x) is the wave-vector component in the modulation direction), whose energies are close by the corresponding inter-subband SPE spectra. The energy of the intra-subband mode decreases and that of inter-subband mode increases with q(x) increasing. The collective excitation dispersions show obvious anisotropy in the 1D quantum limit. The calculated results agree with the experiment well. The coupling between quantum wires affects markedly both the collective and single-particle excitations spectra. The system changes to a near-two-dimensional electron system gradually with increasing coupling.

GaAs脊形量子线结构的MBE生长机理研究

报道了非平面衬底上分子束外延生长GaAs脊形量子线结构的实验研究。已成功地在GaAs(001)刻蚀条形衬底上生长出了由(111)面和(113)面构成的两种脊形量子线结构。讨论了非平面衬底上MBE生长脊形结构的形成机制,认为在一定的生长条件下,脊形结构的表面取向是由两个原始交界面上生长速率的相对差异决定的;而生长速率的差异是由表面再构的不同决定的。

Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure

The single delta -doped InGaAs/AlGaAs pseudomorphic HEMT structure materials were grown by molecular beam epitaxy. The photoluminescence spectra of the materials were studied. There are two peaks in the photoluminescence spectra of the materials, corresponding to two sub energy levels of InGaAs quantum well. The ratio of the two peak's intensity was used as criterion to optimize the layer structures of the materials. The material with optimized layer ;tructures exhibits the 77 It mobility and two-dimensional electron gas density of 16 500 cm(2)/Vs and 2.58 x 10(12) cm(-2) respectively, and the 300 K mobility and two-dimensional electron gas density of 6800 cm(2)/Vs and 2.55 x 10(12) cm(-2) respectively. The pseudomorphic HEMT devices with gate length of 0.2 mum were fabricated using this material. The maximum transconductance of 650 mS/mm and the cut-off frequency of 81 GHz were achieved. (C) 2001 Elsevier Science B.V. All rights reserved.

High-quality metamorphic HEMT grown on GaAs substrates by MBE

Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates by molecular beam epitaxy (MBE). Linearly graded and the step-graded InGaAs and InAlAs buffet layers hal e been compared, and TEM, PL and low-temperature Hall have been used to analyze the properties of the buffer layers and the M-HEMT structure. For a single-delta-doped M-HEMT structure with an In0.53Ga0.47As channel layer and a 0.8 mum step-graded InAlAs buffer layer, room-temperature mobility of 9000 cm(2)/V s and a sheet electron density as high as 3.6 x 10(12)/cm(2) are obtained. These results are nearly equivalent to those obtained for the same structure grown on an InP substrate. A basic M-HEMT device with 1 mum gate was fabricated, and g(m) is larger than 400 mS/mm. (C) 2001 Elsevier Science B.V. All rights reserved.

Hydrogen behavior in GaN epilayers grown by NH3-MBE

Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.

Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy

The influence of electric fields on surface migration of Gallium (Ga) and Nitrogen (N) adatoms is studied during GaN growth by molecular beam epitaxy (MBE). When a direct current (DC) is used to heat the sample, long distance migration of Ga adatoms and diffusion asymmetry of N adatoms at steps are observed. On the other hand, if an alternating current (AC) is used, no such preferential adatom migration is found. This effect is attributed to the effective positive charges of surface adatoms. representing an effect of electro-migration. The implications of such current-induced surface migration to GaN epitaxy are subsequently investigated. It is seen to firstly change the distribution of Ga adatoms on a growing surface, and thus make the growth to be Ga-limited at one side of the sample but N-limited at the other side. This leads to different optical qualities of the film and different morphologies of the surface. (C) 2001 Elsevier Science B.V. All rights reserved.

High-quality GaN grown by gas-source MBE

High-quality GaN epilayers were consistently obtained using a home-made gas-sourer MBE system on sapphire substrates. Room-temperature electron mobility of the grown GaN film is 300 cm(2)/V s with a background electron concentration as low as 2 x 10(17) cm(-3) The full-width at half-maximum of the GaN (0 0 0 2) double-crystal X-ray rocking curve is 6 arcmin. At low temperature (3.5 K), the FWHM of the: near-band-edge photoluminescence emission line is 10 meV. Furthermore, using piezoelectric effect alone with the high-quality films, two-dimensional electron gas was formed in a GaN/AlN/GaN/sapphire structure. Its room-temperature and low-temperature (77 K) electron mobility is 680 cm(2)/V s and 1700 cm(2)/V s, and the corresponding sheet electron density is 3.2 x 10(13) and 2.6 x 10(13) cm(-2), respectively. (C) 2001 Published by Elsevier Science.

Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates

Cubic GaN/GaAs(0 0 1) epilayers and hexagonal inclusions are characterized by X-ray diffraction (XRD), Photoluminescence (PL), Raman spectroscopy, and transmission electron microscopy (TEM). The X-ray {0 0 0 2} and (1 0 (1) over bar 0) pole figures show that the orientation relationships between cubic GaN and hexagonal inclusions are (1 1 1)//(0 0 0 1), <1 1 2 >//<1 0 (1) over bar 0 >. The distribution of hexagonal inclusions mainly results from the interfacial bonding disorder in the grain boundaries parallel to hexagonal <0 0 0 1 > directions and the lattice mismatch in <0 0 0 1 > directions on {1 0 (1) over bar 0} planes. In order to reduce the energy increase in cubic epilayers, hexagonal lamellas with smaller sizes in <0 0 0 1 > directions often nucleate inside the buffer layer or near the interface between the buffer layer and the epitaxial layer, and penetrate through the whole epitaxial layer with this orientation relationship. (C) 2001 Elsevier Science B.V. All rights reserved.

Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures

We have investigated transitions above and below band edge of GaNAs/GaAs and InGaNAs/GaAs single quantum wells (QWs) by photoluminescence (PL) as well as by absorption spectra via photovoltaic effects. The interband PL peak is observed to be dominant under high excitation intensity and at low temperature. The broad luminescence band below band edge due to the nitrogen-related potential fluctuations can be effectively suppressed by increasing indium incorporation into InGaNAs. In contrast to InGaNAs/GaAs QWs, the measured interband transition energy of GaNAs/GaAs QWs can be well fitted to the theoretical calculations if a type-II band lineup is assumed. (C) 2001 Elsevier Science B.V. All rights reserved.