Influence of strains and defects on ferroelectric and dielectric properties of thin-film barium-strontium titanates

Pristine, W and Mn 1% doped Ba(0.6)Sr(0.4)TiO(3) epitaxial thin films grown on the LaAlO(3) substrate were deposited by pulsed laser deposition (PLD). Dielectric and ferroelectric properties were determined by the capacitance measurements and X-ray diffraction was used to determine both residual elastic strains and defect-related inhomogeneous strains-by analyzing diffraction line shifts and line broadening, respectively. We found that both elastic and inhomogeneous strains are affected by doping. This strain correlates with the change in Curie-Weiss temperature and can qualitatively explain changes in dielectric loss. To explain the experimental findings, we model the dielectric and ferroelectric properties of interest in the framework of the Landau-Ginzburg-Devonshire thermodynamic theory. As expected, an, elastic-strain contribution due to the epilayer-substrate misfit has an important influence on the free-energy. However, additional terms that correspond to the defect-related inhomogeneous strain had to be introduced to fully explain the measurements.

A sensor for monitoring the volume of nutrient in a solid substrate-based growth media by using electrochemical admittance spectroscopy

A sensor was fashioned to monitor the volume of nutrient in a solid substrate-based growth media by using electrochemical admittance spectroscopy. Several experimental parameters were investigated (i.e. The use of two- or three-electrode cells, the superficial area of the electrode, the amount of nutrient solution added to the growth media, and the influence of varying the dc and ac potential) to assess how these variables affect the admittance of the system. A linear correlation was observed between the maximum of the imaginary admittance and the volume of nutrient present. The response factor was 2.8 x 10(-5) S cm(-2) ml(-1) and the limit of detection (LOD) was 0.54 ml. The humidity of the growth media does not change the response of the nutrient toward the monitoring measurements. These results demonstrate that the volume of nutrient in this solid substrate-based growth media can be assessed using a ceramic sensor to measure the imaginary admittance. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Brillouin scattering in planar waveguides. II. Experiments

Silica-titania planar waveguides of different thicknesses and compositions have been produced by radio-frequency sputtering and dip coating on silica substrates. Waveguides were also produced by silver exchange on a soda-lime silicate glass substrate. Brillouin scattering of the samples has been studied by coupling the exciting laser beam with a prism to different transverse-electric (TE) modes of the waveguides, and collecting the scattered light from the front surface. In multimode waveguides, the spectra depend on the m mode of excitation. For waveguides with a step index profile, two main peaks due to longitudinal phonons are present, apart from the case of the TE0 excitation, where a single peak is observed. The energy separation between the two peaks increases with the mode index. In graded-index waveguides, m-1 peaks of comparable intensities are observed. The spectra are reproduced very well by a model which considers the space distribution of the exciting field in the mode, a simple space dependence of the elasto-optic coefficients, through the value of the refraction index, and neglects the refraction of phonons. A single-fit parameter, i.e., the longitudinal sound velocity, is used to calculate as many spectra as is the number of modes in the waveguide. (C) 2003 American Institute of Physics.

Modelling and optimization of the cephalosporin C production bioprocess in a fed-batch bioreactor with invert sugar as substrate

Cephalosporin C production process optimization was studied based on four experiments carried out in an agitated and aerated tank fermenter operated as a fed-batch reactor. The microorganism Cephalosporium acremonium ATCC 48272 (C-10) was cultivated in a synthetic medium containing glucose as major carbon and energy source. The additional medium contained a hydrolyzed sucrose solution as the main carbon and energy source and it was added after the glucose depletion. By manipulating the supplementary feed rate, it was possible to increase antibiotic production. A mathematical model to represent the fed-batch production process was developed. It was observed that the model was applicable under different operation conditions, showing that optimization studies can be made based on this model. (C) 1999 Elsevier B.V. Ltd. All rights reserved.

Production of volatile compounds by Geotrichum fragrans using cassava wastewater as substrate

The cassava processing industry generates wastewater named manipueira with a high organic content. Although considered a pollutant, manipueira can be used as substrate for fermentative processes including the cultivation of Geotrichum fragrans. This aerobic microorganism isolated from cassava wastewater has cyanide resistant respiration. Under cassava wastewater cultivation, G. fragrans produced fruit aroma volatile compounds. This study evaluated volatile compounds produced by G. fragrans in cassava liquid waste. The waste had a sugar composition composed of dextrin (2.6%), maltose (1.4%), sucrose (32.1%), glucose (38.3%), and fructose (25.6%). The average value of total sugars was 58.2 g l(-1), composed of 38.0 g l(-1) reducing and 20.2 g l(-1) non-reducing sugars. The chemical oxygen demand (COD) average value was 60 000 mg l(-1). G. fragrans used sugars (fructose and glucose) for energy generation reducing the COD value of the cassava wastewater by 40%. Biomass production of G. fragrans cultivated for 12 h in natural cassava liquid waste was 12.8 g l(-)1. The volatile compounds identified in the cassava liquid waste after 72 h cultivation were: 1-butanol, 3-methyl 1-butanol (isoamylic alcohol), 2-methyl 1-butanol, 1-3 butanodiol and phenylethanol; ethyl acetate, ethyl propionate, 2-methyl ethyl propionate and 2-methyl propanoic. The effect of substrate supplementation with glucose (50 g l(-1)), fructose (50 g l(-1)) and aqueous yeast extract (200 ml l(-1)) did not affect the qualitative and quantitative profiles of volatile compounds. These results indicate that the carbon (C) source utilized by microorganism was glucose or fructose, while nitrogen (N) supplementation was not necessary because the agent did not exhaust all the nitrogen of the wastewater. (C) 2003 Elsevier B.V. Ltd. All rights reserved.

Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate

Cubic GaN layers are grown by molecular beam epitaxy on (001) GaAs substrates. Optical micrographs of the GaN epilayers intentionally grown at Ga excess reveal the existence of surface irregularities such as bright rectangular structures, dark dots surrounded by rectangles and dark dots without rectangles. Micro-Raman spectroscopy is used to study the structural properties of these inclusions and of the epilayers in greater detail. We conclude that the observed irregularities are the result of a melting process due to the existence of a liquid Ga phase on the growing surface.

Performance of an operating high energy physics data grid: DOSAR-Grid

The DO experiment at Fermilab's Tevatron will record several petabytes of data over the next five years in pursuing the goals of understanding nature and searching for the origin of mass. Computing resources required to analyze these data far exceed capabilities of any one institution. Moreover, the widely scattered geographical distribution of DO collaborators poses further serious difficulties for optimal use of human and computing resources. These difficulties will exacerbate in future high energy physics experiments, like the LHC. The computing grid has long been recognized as a solution to these problems. This technology is being made a more immediate reality to end users in DO by developing a grid in the DO Southern Analysis Region (DOSAR), DOSAR-Grid, using a available resources within it and a home-grown local task manager, McFarm. We will present the architecture in which the DOSAR-Grid is implemented, the use of technology and the functionality of the grid, and the experience from operating the grid in simulation, reprocessing and data analyses for a currently running HEP experiment.

Erbium- and ytterbium-doped sol-gel SiO2-HfO2 crack-free thick films onto silica on silicon substrate

Aware of the difficulties in applying sol-gel technology on the preparation of thin films suitable for optical devices, the present paper reports on the preparation of crack-free erbium- and ytterbium-doped silica: hafnia thick films onto silica on silicon. The film was obtained using a dispersion of silica-hafnia nanoparticles into a binder solution, spin-coating, regular thermal process and rapid thermal process. The used methodology has allowed a significant increase of the film thickness. Based on the presented results good optical-quality films with the required thickness for a fiber matching single mode waveguide were obtained using the erbium- and ytterbium-activated sol-gel silica:hafnia system. The prepared film supports two transversal electric modes at 1550 nm and the difference between the transversal electric mode and the transversal magnetic mode is very small, indicating low birefringence. Photoluminescence of the I-4(13/2) -> I-4(15/2) transition of erbium ions shows a broad band centered at 1.53 mu m with full width at a half maximum of 28 nm. Up-conversion emission was carried out under different pump laser powers, and just one transition at red region was observed. (c) 2006 Elsevier B.V. All rights reserved.

Evaluating the residual stress in PbTiO3 thin films prepared by a polymeric chemical method

We report a study of residual stress in PbTiO3 (PT) thin films prepared on Si substrates by a polymeric chemical method. The E(1TO) frequency was used to evaluate the residual stress through an empirical equation available for bulk PT. We find that the residual stress in PT films increases as the film thickness decreases and conclude that it originates essentially from the contributions of extrinsic and intrinsic factors. Polarized Raman experiments showed that the PT films prepared by a polymeric chemical method are somewhat a-domain (polar axis c parallel to the substrate) oriented.

Rhodamine B-containing silica films from TEOS precursor: Substrate surface effects detected by photoluminescence

This work presents the study of substrate surface effects on rhodamine B-containing silica films obtained from TEOS (tetraethylorthosilicate) acid hydrolysis. Soda-lime glass substrates were treated with basic solution under different reaction times and temperatures. Rhodamine B-containing silica films were deposited on pre-treated substrates by the spin-coating method. The substrate surface directly affects film morphology and homogeneity. The films are formed by packed silica spheres which protect the dye against acid-base attack. Luminescence spectra present shifts on the dye emission maximum as expected for different pH values on the substrate surface depending on the alkaline treatment. (c) 2006 Elsevier B.V. All rights reserved.

PERFORMANCE OF THE SLD BARREL CRID DURING THE 1992 PHYSICS DATA RUN

The SLD Barrel Cherenkov Ring Imaging Detector was fully operational in the 1992 physics data run. The electron drift velocity and magnetic field deflection of electron trajectories have been measured. Cherenkov rings have been observed from both the liquid and gas radiators. The number and the resolution of the angle of Cherenkov photons have been measured to be approximately equal to design specifications.

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence (PL) technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity. (C) 2003 American Institute of Physics.