1000 resultados para passive coupling


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In this paper, the effective coupling coefficient k(eff) and the self-coupling coefficient zeta(1) are introduced to describe the characteristic of gratings in a resonant situation when the effects of radiation and other partial waves coupling are considered. The dependence of these two coupling coefficients on grating tooth shapes and depths and the dimensions of graded refractive index (GRIN) waveguides is numerically analysed. The results show that the gratings with linear GRIN waveguides have the largest \k(eff)\. The possibility of realizing a complex-coupled DFB laser, even a pure gain or loss coupled DFB laser, employing only a real refractive index coupled grating is also discussed.

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An effective coupling efficient is introduced for gain-coupled distributed feedback lasers with absorptive grating. When radiation and other partial wave coupling effects are considered, the effective coupling coefficient will change significantly. In some cases, it will become real, although both loss and index coupling are presented.

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This paper presents a power supply solution for fully integrated passive radio-frequency identification(RFID) transponder IC,which has been implemented in 0.35μm CMOS technology with embedded EEPROM from Chartered Semiconductor.The proposed AC/DC and DC/DC charge pumps can generate stable output for RFID applications with quite low power dissipation and extremely high pumping efficiency.An analytical model of the voltage multiplier,comparison with other charge pumps,simulation results,and chip testing results are presented.

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Two semiconductor saturable absorber mirrors (SESAMs), of which one is coated with 50% reflection film on the top and the other is not, were contrastively studied in passively mode-locked solid-state lasers which were pumped by low output power laser diode (LD). Experiments have shown that reducing the modulation depth of SESAM by coating partial reflection film, whose reflectivity is higher than that between SESAM and air interface, is an effective method to get continuous wave (CW) mode-locking instead of Q-switched mode-locking (QML) in low power pumped solid-state lasers. A simple Nd:YVO4 laser pumped by low power LD, in which no water-cooling system was used, could obtain CW mode-locking by the 50% reflector coated SESAM with average output power of ~ 20 mW

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A novel 1.55μm laser diode with spot-size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double-core structure is employed.For the spot-size converter,a buried ridge double-core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0.35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14.89°×18.18°,respectively,resulting in low-coupling losses with a cleaved optical fiber (3dB loss).

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The butt-coupling between a semiconductor laser diode and a fiber Bragg grating external cavity acts a key roll on the laser characteristics. The scatter matrix method considering the butt-coupling efficiency is used to analyze the butt-coupling between them. It is found that the butt-coupling distance and coupling efficiency determine the laser characteristics. For strong feedback, the single lasing wavelength changes in the reflection bandwidth of the effective reflectivity ( approximately the Bragg region of the fiber Bragg grating) as the distances change. For weak feedback condition, some different results are obtained. The SMSRs in the two conditions are presented and analyzed. These results can provide important design guidance of device parameters for the practical fabrication.

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We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As^(+) in the concentration of 10^(16) ions/cm^(2). To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 oC for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and highreflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.

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A passive mode-locked diode-pumped self-frequency-doubling Yb:YAB laser with a low modulation depth semiconductor saturable absorber mirror operating at 374 MHz is demonstrated. The measured pulse duration is 1.98 ps at the wavelength of 1044 nm. The maximum average power reaches 45 mW.

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The theoretical investigation of the coupling efficiency of a laser diode to a single mode fiber via a hemispherical lens on the tip of the tapered fiber in the presence of possible transverse offset and angular mismatch is reported.Without the misalignment,coupling efficiency increases with the decreasing of taper length.With the misalignment,this relation is that the coupling efficiency decreases with each kind of offset.

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Based on a set of microoptics the output radiation from a continuous wave (CW) linear laser diode array is coupled into a multi-mode optical fiber of 400 ptm diameter. The CW linear laser diode array is a 1 cm laser diode bar with 19 stripes with 100 fxm aperture spaced on 500 (xm centers. The coupling system contains packaged laser diode bar, fast axis collimator, slow axis collimation array, beam transformation system and focusing system. The high brightness, high power density and single fiber output of a laser diode bar is achieved. The coupling efficiency is 65% and the power density is up to 1.03 * 10~4 W/cm~2.

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A novel self-aligned coupled waveguide (SACW) multi-quantum-well (MQW) distributed Bragg reflector (DBR) laser is proposed and demonstrated for the first time. By selectively removing the MQW layer and leaving the low SCH/SACW layer the Bragg grating is partially formed on this layer. By optimizing the thickness of the low SCH/SACW layer, a ~80% coupling efficiency between the MQW gain region and the passive region are obtained. The typical threshold current of the SACW DBR laser is 39 mA, the slope efficiency can reach to 0.2 mW/mA and the output power is more than 20 mW with a more than 30dB side mode suppression ratio.

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A passive Q-switched flash-lamp-pumped Nd:YAG laser with the ion-implanted semi-insulating GaAs water is reported.The wafer is implanted with 400keV As~+ ions in the concentration of 10~(16)cm~(-2). Using GaAs wafer as an absorber and an output coupler.62ns pulse duration of single pulse is obtained.

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A piece of multimode optical fiber with a low numerical aperture (NA) is used as an inexpensive microlens to collimate the output radiation of a laser diode bar in the high numerical aperture (NA) direction. The emissions of the laser diode bar are coupled into multimode fiber array. The radiation from individual ones of emitter regions is optically coupled into individual ones of fiber array. Total coupling efficiency and fiber output power are 75% and 15W, respectively.

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国家自然科学基金