Generation of SFR few-group constants using the Monte Carlo code serpent

In this study, the Serpent Monte Carlo code was used as a tool for preparation of homogenized few-group cross sections for the nodal diffusion analysis of Sodium cooled Fast Reactor (SFR) cores. Few-group constants for two reference SFR cores were generated by Serpent and then employed by nodal diffusion code DYN3D in 2D full core calculations. The DYN3D results were verified against the references full core Serpent Monte Carlo solutions. A good agreement between the reference Monte Carlo and nodal diffusion results was observed demonstrating the feasibility of using Serpent for generation of few-group constants for the deterministic SFR analysis.

Optimal displacement mechanisms beneath shallow foundations on linear-elastic perfectly plastic soil

An energy method for a linear-elastic perfectly plastic method utilising the von Mises yield criterion with associated flow developed in 2013 by McMahon and co-workers is used to compare the ellipsoidal cavity-expansion mechanism, from the same work, and the displacement fields of other research by Levin, in 1995, and Osman and Bolton, in 2005, which utilise the Hill and Prandtl mechanisms respectively. The energy method was also used with a mechanism produced by performing a linear-elastic finite-element analysis in Abaqus. At small values of settlement and soil rigidity the elastic mechanism provides the lowest upper-bound solution, and matches well with finite-element analysis results published in the literature. At typical footing working loads and settlements the cavity-expansion mechanism produces a more optimal solution than the displacement fields within the Hill and Prandtl mechanisms, and also matches well with the published finite-element analysis results in this range. Beyond these loads, at greater footing settlements, or soil rigidity, the Prandtl mechanism is shown to be the most appropriate.

Inkjet printing of weakly elastic polymer solutions

Fluid assessment methods, requiring small volumes and avoiding the need for jetting, are particularly useful in the design of functional fluids for inkjet printing applications. With the increasing use of complex (rather than Newtonian) fluids for manufacturing, single frequency fluid characterisation cannot reliably predict good jetting behaviour, owing to the range of shearing and extensional flow rates involved. However, the scope of inkjet fluid assessments (beyond achievement of a nominal viscosity within the print head design specification) is usually focused on the final application rather than the jetting processes. The experimental demonstration of the clear insufficiency of such approaches shows that fluid jetting can readily discriminate between fluids assessed as having similar LVE characterisation (within a factor of 2) for typical commercial rheometer measurements at shearing rates reaching 104rads-1.Jetting behaviour of weakly elastic dilute linear polystyrene solutions, for molecular weights of 110-488. kDa, recorded using high speed video was compared with recent results from numerical modelling and capillary thinning studies of the same solutions.The jetting images show behaviour ranging from near-Newtonian to "beads-on-a-string". The inkjet printing behaviour does not correlate simply with the measured extensional relaxation times or Zimm times, but may be consistent with non-linear extensibility L and the production of fully extended polymer molecules in the thinning jet ligament.Fluid test methods allowing a more complete characterisation of NLVE parameters are needed to assess inkjet printing feasibility prior to directly jetting complex fluids. At the present time, directly jetting such fluids may prove to be the only alternative. © 2014 The Authors.

Vibration of pressurised, elastic, spherical shells

Balloons are one example of pressurised, elastic, spherical shells. Whilst analytical solutions exist for the vibration of pressurised spheres, these models only incorporate constant tension in the membrane. For elastic shells, changes in curvature will result in restoring forces that are proportional to the elasticity in the membrane; hence the assumption of constant tension is not valid. This paper describes an analytical solution for the natural frequencies of an elastic spherical shell subject to internal pressure. When the membrane tension is set to zero, the results are shown to converge to the analytical solution for a spherical shell, and when the skin elasticity is neglected, the results converge to the constant-tension solution. This analytical solution is used to predict the natural frequencies of a small balloon, based on a value for the elastic modulus that is determined using biaxial tensile testing. These predictions are compared to experimental measurements of balloon vibrations using impact hammer testing, and good agreement is seen.

Hopping robot based on free vibration of an elastic curved beam

This study presents a novel approach to the design of low-cost and energy-efficient hopping robots, which makes use of free vibration of an elastic curved beam. We found that a hopping robot could benefit from an elastic curved beam in many ways such as low manufacturing cost, light body weight and small energy dissipation in mechanical interactions. A challenging problem of this design strategy, however, lies in harnessing the mechanical dynamics of free vibration in the elastic curved beam: because the free vibration is the outcome of coupled mechanical dynamics between actuation and mechanical structures, it is not trivial to systematically design mechanical structures and control architectures for stable locomotion. From this perspective, this paper investigates a case study of simple hopping robot to identify the design principles of mechanics and control. We developed a hopping robot consisting of an elastic curved beam and a small rotating mass, which was then modeled and analyzed in simulation. The experimental results show that the robot is capable of exhibiting stable hopping gait patterns by using a small actuation with no sensory feedback owing to the intrinsic stability of coupled mechanical dynamics. Furthermore, an additional analysis shows that, by exploiting free vibration of the elastic curved beam, cost of transport of the proposed hopping locomotion can be in the same rage of animals' locomotion including human running. © 2011 IEEE.

Depth dependent elastic strain in ZnO epilayer: combined Rutherford backscattering/channeling and X-ray diffraction

A ZnO layer was grown by metalorganic chemical vapor deposition (MOCVD) on a sapphire (0 0 0 1) substrate. The perpendicular and parallel elastic strain of the ZnO epilayer, e(perpendicular to) = 0.19%, e(parallel to) = -0.29%, respectively, were derived by using the combination of Rutherford backscattering (RBS)/channeling and X-ray diffraction (XRD). The ratio vertical bar e(parallel to)/ e(perpendicular to)vertical bar = 1.5 indicates that ZnO layer is much stiffer in the a-axis direction than in the c-axis direction. By using RBS/C, the depth dependent elastic strain was deduced. The strain is higher at the depth close to the interface and decreases towards the surface. The negative tetragonal distortion was explained by considering the lattice mismatch and thermal mismatch in ZnO thin film. (c) 2004 Elsevier B.V. All rights reserved.

Dependence of elastic strain field on the self-organized ordering of quantum dot superlattices

A systematic investigation of the strain distribution of self-organized, lens-shaped quantum dot in the case of growth direction on (001) substrate was presented. The three-dimensional finite element analysis for an array of dots was used for the strain calculation. The dependence of the strain energy density distribution on the thickness of the capping layer was investigated in detail when the elastic characteristics of the matrix material were anisotropic. It is shown that the elastic anisotropic greatly influences the stress, strain, and strain energy density in the quantum dot structures. The anisotropic ratio of the matrix material and the combination with different thicknesses of the capping layer, may lead to different strain energy density minimum locations on the capping layer surface, which can result in various vertical ordering phenomena for the next layer of quantum dots, i.e. partial alignment, random alignment, and complete alignment.

Influences of As flux on the lattice constants, magnetic and transport properties of (Ga, Mn)As epilayers

A series of (Ga, Mn)As epilayers have been prepared on semi-insulating GaAs (001) substrates at 230 degrees C by molecular-beam epitaxy under fixed temperatures of Ga and Mn cells and varied temperatures of the As cell. By systematically studying the lattice constants, magnetic and magneto-transport properties in a self-consistent manner, we find that the concentration of As antisites monotonically increases with increasing As flux, while the concentration of interstitial Mn defects decreases with it. Such a trend sensitively affects the properties of (Ga, Mn)As epilayers. (c) 2006 Elsevier Ltd. All rights reserved.

Chemical composition and elastic strain in AlInGaN quaternary films

High-quality AlInGaN quaternary layers were grown on c-Al2O3 using a thick GaN template. A full width at half maximum of 0.075 degrees from AlInGaN(0004) rocking curve and a minimum yield of 5.6% from Rutherford backscattering/channelling spectrometry (RBS) prove the AlInGaN layer of a comparable crystalline quality with GaN layers. The chemical compositions (both of Al and In contents) of AlInGaN layers are directly obtained from RBS and elastic recoil detection analysis. The lattice parameters both in perpendicular and parallel directions are deduced from X-ray diffraction. The AlInGaN layer is found to process a compressive strain in parallel direction and a tensile strain in perpendicular direction. (c) 2006 Elsevier B.V. All rights reserved.

Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Rutherford backscattering

We report on structural characterization of AlGaN/GaN superlattices grown on sapphire. The superlattice formation is evidenced by high-resolution x-ray diffraction and transmission electron microscopy. The high resolution x-ray diffraction spectra exhibit a pattern of satellite peaks. The in-plane lattice constants of the superlattices indicate the coherent growth of the AlGaN layer onto GaN. The average At composition in the superlattices is determined to be 0.08 by Rutherford backscattering spectroscopy. The average parallel and perpendicular elastic strains for the SLs are determined to be (e(parallel to)) = +0.25% and (e(perpendicular to)) = -0.17%. (c) 2006 Elsevier Ltd. All rights reserved.

Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate

The biaxial piezospectroscopic coefficient (i.e., the rate of spectral shift with stress) of the electrostimulated near-band-gap luminescence of gallium nitride (GaN) was determined as Pi=-25.8 +/- 0.2 meV/GPa. A controlled biaxial stress field was applied on a hexagonal GaN film, epitaxially grown on (0001) sapphire using a ball-on-ring biaxial bending jig, and the spectral shift of the electrostimulated near-band-gap was measured in situ in the scanning electron microscope. This calibration method can be useful to overcome the lack of a bulk crystal of relatively large size for more conventional uniaxial bending calibrations, which has so far hampered the precise determination of the piezospectroscopic coefficient of GaN. The main source of error involved with the present calibration method is represented by the selection of appropriate values for the elastic stiffness constants of both film and substrate. The ball-on-ring calibration method can be generally applied to directly determine the biaxial-stress dependence of selected cathodoluminescence bands of epilayer/substrate materials without requiring separation of the film from the substrate. (c) 2006 American Institute of Physics.

High-precision determination of lattice constants and structural characterization of InN thin films

X-ray diffraction and Rutherford backscattering/channeling were used to characterize the crystalline quality of an InN layer grown on Al2O3(0001) Using metal-organic chemical-vapor deposition. A full width at half maximum of 0.27 degrees from an InN(0002) omega scan and a minimum yield of 23% from channeling measurements show that this 480-nm-thick InN layer grown at low temperature (450 degrees C) has a relatively good crystalline quality. High-resolution x-ray diffraction indicates that the InN layer contains a small fraction of cubic InN, besides the predominant hexagonal phase. From this InN sample, the lattice constants a=0.353 76 nm and c=0.570 64 nm for the hexagonal InN and a=0.4986 nm for the cubic InN were determined independently. 2 theta/omega-chi mapping and a pole figure measurement revealed that the crystallographic relationship among the cubic InN, the hexagonal InN, and the substrate is: InN[111]parallel to InN[0001]parallel to Al2O3[0001] and InN{110}parallel to InN{1120}parallel to Al2O3{1010}, and that the cubic InN is twinned. Photoluminescence measurements indicate that the band-gap energy of this sample is approximately 0.82 eV. (c) 2006 American Vacuum Society.

Optical constants of cubic GaN/GaAs(001): Experiment and modeling

The optical constants epsilon(E)=epsilon(1)(E)+iepsilon(2)(E) of unintentionally doped cubic GaN grown on GaAs(001) have been measured at 300 K using spectral ellipsometry in the range of 1.5-5.0 eV. The epsilon(E) spectra display a structure, associated with the critical point at E-0 (direct gap) and some contribution mainly coming from the E-1 critical point. The experimental data over the entire measured spectral range (after oxide removal) has been fit using the Holden-Munoz model dielectric function [M. Munoz et al., J. Appl. Phys. 92, 5878 (2002)]. This model is based on the electronic energy-band structure near critical points plus excitonic and band-to-band Coulomb-enhancement effects at E-0, E-0 + Delta(0) and the E-1, E-1 + Delta(1), doublet. In addition to evaluating the energy of the E-0 critical point, the binding energy (R-1) of the two-dimensional exciton related to the E-1 critical point was estimated using the effective mass/k.p theory. The line, shape of the imaginary part of the cubic-GaN dielectric function shows excitonic effects at room temperature not withstanding that the exciton was not resolved. (C) 2003 American Institute of Physics.

Elastic deformation of wafer surfaces in bonding

A model has been proposed for describing elastic deformation of wafer surfaces in bonding. The change of the surface shape is studied on the basis of the distribution of the periodic strain field. With the condition of diminishing periodic strain away from the interface, Airy stress function has been found that satisfies the elastic mechanical equilibrium. The result reveals that the wavy interface elastically deforms a spatial wavelength from the interface. (C) 2000 American Institute of Physics. [S0021-8979(00)04219-5].