A novel quantum directional coupler based on Pi-shaped coupled electron waveguides

We explore the possibility of a quantum directional coupler based on Pi-shaped coupled electron waveguides with smooth boundaries. By calculating the transmission spectra, we propose an optimized coupler structure with a high directivity and fine uniformity. The coupler specifications, directivity, uniformity, and coupling coefficient are evaluated.

Calculation of the band structure of semiconductor quantum wells using scattering matrices

The transfer-matrix method widely used in the calculation of the band structure of semiconductor quantum wells is found to have limitations due to its intrinsic numerical instability. It is pointed out that the numerical instability arises from free-propagating transfer matrices. A new scattering-matrix method is developed for the multiple-band Kane model within the envelope-function approximation. Compared with the transfer-matrix method, the proposed algorithm is found to be more efficient and stable. A four-band Kane model is used to check the validity of the method and the results are found to be in good agreement with earlier calculations.

Improvement of the stability of hydrogenated amorphous silicon films by intermittent illumination treatment at elevated temperature

The intermittent illumination treatment by white light at elevated temperature is proved to be a convenient and efficient method for the improvement of the stability of hydrogenated amorphous silicon (a-Si:H) films. The effect of the treatment on electrical properties, light-induced degradation, and gap states of undoped a-Si:H films has been investigated in detail. With the increase of cycling number, the dark- as well as photo-conductivities in annealed state and light-soaked state approach each other, presenting an unique irreversible effect. The stabilization and ordering processes by the present treatment can not be achieved merely by annealing under the same conditions. It is shown that the treatment proposed here results in a shift to higher values of the energy barriers between defects and their precursors, and hence an improved stability of a-Si:H films. (C) 1996 American Institute of Physics.

Influence of the lateral confining potential on the ballistic electron transport in a quantum wire

A theoretical investigation of ballistic electron transport in a quantum wire with soft wall confinement is presented. A general method of the electron transmission calculation is proposed for structures with complicated geometries. The effects of the lateral guiding potential on ballistic transport are investigated using three soft wall confinement models and the results are compared with those obtained from the hard wall confinement approximation. It is shown that the calculated transmission coefficients are notably dependent on the lateral confining potential especially when the incident electron energy is larger than the energy of the second transverse mode. It is found that the transmission profile obtained from soft wall confinement models exhibits simpler resonance structures than that obtained from the hard wall confinement approximation. Our results suggest that only in the single-channel regime the hard wall confinement approximation can give reasonable results.

A transfer matrix approach to conductance in quantum waveguides

A transfer matrix approach is presented for the study of electron conduction in an arbitrarily shaped cavity structure embedded in a quantum wire. Using the boundary conditions for wave functions, the transfer matrix at an interface with a discontinuous potential boundary is obtained for the first time. The total transfer matrix is calculated by multiplication of the transfer matrix for each segment of the structure as well as numerical integration of coupled second-order differential equations. The proposed method is applied to the evaluation of the conductance and the electron probability density in several typical cavity structures. The effect of the geometrical features on the electron transmission is discussed in detail. In the numerical calculations, the method is found to be more efficient than most of the other methods in the literature and the results are found to be in excellent agreement with those obtained by the recursive Green's function method.

On the soft wall guiding potentials in realistic quantum waveguides

A transfer matrix method is presented for the study of electron conduction in a quantum waveguide with soft wall lateral confinement. By transforming the two-dimensional Schrodinger equation into a set of second order ordinary differential equations, the total transfer matrix is obtained and the scattering probability amplitudes are calculated. The proposed method is applied to the evaluation of the electron transmission in two types of cavity structure with finite-height square-well confinement. The results obtained by our method, which are found to be in excellent agreement with those from another transfer matrix method, suggest that the infinite square-well potential is a good approximation to finite-height square-well confinement for electrons propagating in the ground transverse mode, but softening of the walls has an obvious effect on the electron transmission and mode-mixing for propagating in the excited transverse mode. (C) 1996 American Institute of Physics.

High temperature annealing behaviors of luminescent SIOx : H films

The effects of high temperature annealing on the microstructure and optical properties of luminescent SiOx:H films have been investigated. Micro-Raman scattering and IR absorption, in combination with atomic force microscopy (AFM), provide evidence for the existence of both a-Si clusters in the as-grown a-SiOx:H and Si nanocrystals in the 1170 degrees C annealed films. The dependence of optical coefficients (alpha) on photon energy (h nu) near the absorption edge (E-g) is found to follow the square root law: (alpha h nu)(1/2) proportional to (E-g - h nu), indicating that nano-Si embedded in SiO2 is still an indirect material. A comparison of the deduced absorption edge with the PL spectra shows an obvious Stokes shift, suggesting that phonons should be involved in the optical transition process.

High quality hydrogenated amorphous silicon films with significantly improved stability

High quality hydrogenated amorphous silicon (a-Si:H) films have been prepared by a simple "uninterrupted growth/annealing" plasma enhanced chemical vapor deposition (PECVD) technique, combined with a subtle boron-compensated doping. These a-Si:H films possess a high photosensitivity over 10(6), and exhibit no degradation in photoconductivity and a low light-induced defect density after prolonged illumination. The central idea is to control the growth conditions adjacent to the critical point of phase transition from amorphous to crystalline state, and yet to locate the Fermi level close to the midgap. Our results show that the improved stability and photosensitivity of a-Si:H films prepared by this method can be mainly attributed to the formation of a more robust network structure and reduction in the precursors density of light-induced metastable defects.

Crystallographic and magnetic properties of hydride R3Fe29-xTxHy (R=Y, Ce, Nd, Sm, Gd, Tb and Dy; T=V and Cr)

The crystallographic and intrinsic magnetic properties of hydride R3Fe29-xTxHy (R=Y, Ce, Nd, Sm, Gd, Tb, and Dy; T=V and Cr) have been investigated. The lattice constants and the unit cell volume of R3Fe29-xTxHy decrease with increasing R atomic number from Nd to Dy, except for Ce, reflecting the lanthanide contraction. Regular anisotropic expansions, mainly along the a- and b-axis rather than along the c-axis, are observed for all the compounds upon hydrogenation. Hydrogenation leads to an increase in Curie temperature. First-order magnetization processes (FOMP) occur in magnetic fields of around 1.5 T and 4.0 T at 4.2 K for Nd3Fe24.5Cr4.5H5.0 and Tb(3)Fc(27.0)Cr(2.0)H(2.8), and around 1.4 T at room temperature for Gd3Fe28.0Cr1.0H4.2 Abnormal crystallographic and magnetic properties of Ce3Fe29-xTxHy suggest that the Ce ion is non-triply ionized.

Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved.

Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities

This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity with InAs quantum dots (QDs) emitters and analyzes the optical characteristics of cavity modes at room temperature. The micro-luminescence spectrum recorded from the nanocavities exhibits a narrow optical transition at the lowest order resonance wavelength of about 1137 nm with about 1 nm emission linewidth. In addition, the spectra of photonic crystal nanocavities processed under different etching conditions show that the verticality of air hole sidewall is an important factor determing the luminescence characteristics of photonic crystal nanocaivties. Finally,,the variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed at improving the probability of achieving spectral coupling of a single QD to a cavity mode.

Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis

A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and alpha-Si layers were deposited by magnetron sputtering respectively and annealed at 480A degrees C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between gamma-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of gamma-Al2O3, which was formed at the early stage of annealing.

广西主要林区多孔菌生物多样性与资源的初步研究

广西壮族自治区是中国多孔菌资源比较丰富的区域之一，本研究对广西主要林区进行了初步调查，并根据形态学研究方法对广西地区的多孔菌进行了系统分类学研究。 结果显示，广西地区的多孔菌共有15科，60属，140种。研究过程中发现两个新种，分别是菌索容氏孔菌Junghuhnia rhizomorpha H.S. Yuan & Y.C. Dai和小孔大孢卧孔菌Megasporoporia microporela X.S. Zhou &Y.C. Dai；发现7个中国新记录种：萨拉氏灵芝Ganoderma sarasinii Steyaert，唐氏胶囊革菌Gloeocystidiellum donkii S.S. Rattan，线浅孔菌Grammothele lineata Berkeley & M.A. Curtis，粉状捷克革菌Jacksonomyces furfurellus (Bres.) Sheng H. Wu & Z.C. Chen，半伏容氏孔菌Junghuhnia separabilima (Pouzar) Ryvarden，非洲纵隔担孔菌Protomerulius africanus (Ryvarden) Ryvarden和日本芮氏孔菌Wrightoporia japonica Núñez & Ryvarden；78种为广西地区新记录种，占该地区已报道种类的55.7%。 依据分类学的研究结果，对广西地区的多孔菌的种类组成和地理成分进行了初步分析，结果显示，优势科为多孔菌科Polyporaceae（33.3%），其次为皱孔菌科Meripilaceae（10%），优势属为多孔菌属Polyporus（7.9%%）和针层孔菌属Phellinus（5.7%）；属的地理成分以世界广布属（68.3%）和热带–亚热带分布属（23.3%）为主，种的地理成分以泛热带分布成分（35%）和世界广布种（30%）为主。 经研究表明广西地区共有森林干基腐朽病原多孔菌21种，食用多孔菌菌有5种，药用多孔菌32种，工业用多孔菌17种，多孔菌资源较丰富。 对重要种类木蹄层孔菌Fomes fomentarius (L.:Fr.) Fr.进行了固体培养研究，结果显示木蹄层孔菌的营养菌丝生长最适培养温度为28℃，最适培养pH值为7，最适培养碳源为蔗糖，最适培养氮源为蛋白胨。

中国产丝齿菌属Hyphodontia分类学研究

革菌是指平伏的具有光滑、齿状或瘤状子实层体表面的木材腐朽菌，该类群属于担子菌门（Basidiomycota），担子菌纲（Basidiomycetes），是一类数量较多、组成较为复杂的高等真菌。 革菌具有重要的生态学功能和经济价值。该类群真菌能够降解木质素和纤维素，在森林生态系统中起着关键的降解还原作用；同时，革菌还是重要的生物资源，部分种类能够造成林木病害是林木病原菌；部分革菌具有药用、食用价值；有些种类的革菌还具有重要的工业应用价值。 对采集自我国不同地区、不同森林生态类型中的，以及现保存于中国科学院沈阳应用生态研究所东北生物标本馆（IFP），中国科学院微生物研究所真菌标本馆（HMAS）等国内主要标本馆的非褶菌目木材腐朽菌 — 产丝齿菌属（Hyphodontia J. Erikss.）的真菌标本进行了全面系统的研究，其中自采标本约800余号，馆藏标本600余号。按照Donk，Eriksson和Parmasto提出的传统分类方法对该属的种类进行详细的描述和显微结构绘图，记载了每个种类的寄主、国内外分布及研究标本，并对每种与相似种的联系和区别进行了讨论。我国范围内共记录及描述产丝齿菌属（Hyphodontia）39种，其中共发现新种3个，分别是：头状囊产丝齿菌Hyphodontia capitatocystidiata H.X. Xiong, Y.C. Dai & Sheng H. Wu，异囊产丝齿菌H. heterocystidiata H.X. Xiong, Y.C. Dai & Sheng H. Wu 和 似土黄产丝齿菌H. subpallidula H.X. Xiong, Y.C. Dai & Sheng H. Wu；发现中国新记录种2个：冷杉产丝齿菌Hyphodontia abieticola (Bourdot & Galzin) J. Erikss.和弯孢产丝齿菌H. curvispora J. Erikss. & Hjortstam；大陆新记录种7个，分别是：台湾产丝齿菌Hyphodontia formosana Sheng H. Wu & Burds.，羊毛状产丝齿菌Hyphodontia lanata Burds. & Nakasone，膜质产丝齿菌Hyphodontia pelliculae (H. Furuk.) N. Maek.，无锁产丝齿菌Hyphodontia poroideoefibulata Sheng H. Wu，近球孢产丝齿菌Hyphodontia subglobasa Sheng H. Wu，热带产丝齿菌Hyphodontia tropica Sheng H. Wu和管形产丝齿菌Hyphodontia tubuliformis Sheng H. Wu。