On detection wavelength and electron-hole wave function overlap of type II InAs/In-x Ga1-x Sb superlattice infrared photodetector

In this paper, the detection wavelength and the electron-hole wave function overlap of InAs/IrxGa1-xSb type II superlattice photodetectors are numerically calculated by using the envelope function and the transfer matrix methods. The band offset is dealt with by employing the model solid theory, which already takes into account the lattice mismatch between InAs and InxGa1-xSb layers. Firstly, the detection wavelength and the wave function overlap are investigated in dependence on the InAs and InxGa1-xSb layer thicknesses, the In mole fraction, and the periodic number. The results indicate that the detection wavelength increases with increasing In mole fraction, InAs and InxGa1-xSb layer thicknesses, respectively. When increasing the periodic number, the detection wavelength first increases distinctly for small periodic numbers then increases very slightly for large period numbers. Secondly, the wave function overlap diminishes with increasing InAs and InxGa1-xSb layer thicknesses, while it enhances with increasing In mole fraction. The dependence of the wave function overlap on the periodic number shows the same trend as that of the detection wavelength on the periodic number. Moreover, for a constant detection wavelength, the wave function overlap becomes greater when the thickness ratio of the InAs over InxGa1-xSb is larger.

Thermal induced facet destructive feature of quantum cascade lasers

We present a study on the facet damage profile of quantum cascade lasers (QCLs). Conspicuous cascade half-loop damage strips on front facet are observed when QCLs catastrophically failed. Due to the large difference on thermal conductivities between active region and the substrate, dominant heat is compulsively driven to the substrate. Abundant heat accumulation and dissipation on substrate build large temperature gradient and thermal lattice mismatch. Thermal-induced stress due to sequential mismatch leads to the occurrence of the multistep damages on front facet. Good agreement is achieved between the observed locations of damaged strips and the calculated results.

Ultra-broadband optical parametric chirped-pulse amplification by matching of both group-velocity and pulse-front

Ultra-broadband optical parametric chirped-pulse amplification is analyzed based the compensation of phase-mismatch, which is achieved by matching of both group-velocity and pulse-front between signal and idler by the combination of the noncollinear-phase-match and pulse-front-tilt. The results show exactly matching of both group-velocity and pulse-front is the important criterion for constructing an UBOPCPA. Its general model is developed, in which the group velocities, noncollinear angles. spatial walk-off angles, linear angular spectral dispersion coefficients and pulse-front tilted angles are suitably linked to each other. Finally, specific numerical calculations and simulations are presented for beta-barium borate OPCPA with type-1 noncollinear angularly dispersed geometry. (C) 2005 Elsevier B.V. All rights reserved.

Negative lateral shift of a light beam transmitted through a dielectric slab and interaction of boundary effects

It is found that when a light beam travels through a slab of optically denser dielectric medium in air, the lateral shift of the transmitted beam can be negative. This is a novel phenomenon that is reversed in comparison with the geometrical optic prediction according to Snell's law of refraction. A Gaussian-shaped beam is analyzed in the paraxial approximation, and a comparison with numerical simulations is made. Finally, an explanation for the negativity of the lateral shift is suggested, in terms of the interaction of boundary effects of the slab's two interfaces with air.

Investigation of spectral bandwidth of optical parametric amplification

The spectral bandwidth of three-wave-mixing optical parametric amplification has been investigated. A general mathematical model for evaluating the spectral bandwidth of optical parametric amplification is developed with parametric bandwidth and gain bandwidth via three-wave noncollinear interactions. The spectral bandwidth is determined by expanding the wave-vector mismatch in a Taylor series and retaining terms through second order. The model takes into account the effects of crystal length, noncollinear angle, group velocity, group-velocity dispersion and gain coefficient. The relation between parametric bandwidth and gain bandwidth is clearly defined. The model is applied to a BBO OPA, a LBO OPA and a CLBO OPA.

Generation of the high efficiency high peak-power femtosecond blue optical pulse

The analysis and calculation of the compensation for the phase mismatch of the frequency-doubling using the frequency space chirp introduced from prisms are made. The result shows that suitable lens can compensate the phase mismatch in a certain extent resulting from wide femtosecond spectrum when the spectrum is space chirped. By means of this method, the experiment of second harmonic generation is carried out using a home-made femtosecond KLM Ti:sapphire laser and BBO crystal. The conversion efficiency of SHG is 63 %. The average output power of blue light is 320 mW. The central wavelength is 420 nm. The spectrum bandwidth is 5.5 nm. It can sustain the pulse width of 33.6 fs. The tuning range of blue light is 404-420 nm,when the femtosecond Ti:sapphire optical pulse is tuned using the prisms in the cavity.

Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition

Low pressure metalorganic chemical vapour deposition (LP-MOCVD) growth and characteristics of InAssb on (100) Gasb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. The samples are studied by photoluminescence spectra, and the output is 3.17 mu m in wavelength. The surface of InAssb epilayer shows that its morphological feature is dependent on buffer layer. With an InAs buffer layer used, the best surface is obtained. The InAssb film shows to be of n-type conduction with an electron concentration of 8.52 x 10(16) cm(-3).

澜沧江姬鼠（Apodemus ilex）种群遗传结构及其生物地理分析

澜沧江姬鼠（Apodemus ilex）为小型啮齿类动物，长期以来常被认为是中华姬鼠（A. draco）或长尾姬鼠（A. orestes）的同物异名，但近年基于线粒体Cyt b 的研究证明，该类群与中华姬鼠的遗传距离达到了种间水平，并被认为是一个独立种。本文提取、扩增并测定了来自云南14个地区42个产地156个澜沧江姬鼠的Cyt b 全序列，并将GenBank中的3条澜沧江姬鼠的Cyt b 全序列纳入分析，选取福建武夷山与四川峨眉山的2个中华姬鼠样品的Cyt b 全序列，以及台湾姬鼠、大耳姬鼠、高山姬鼠Cyt b 全序列作为外群，利用贝叶斯法和最大似然法构建系统发育树，并使用Network分析，分子变异分析（AMOVA）分析、错配分析（Mismatch analysis）与Fu`Fs检验等方法，探讨了这些地区澜沧江姬鼠的种群遗传结构，种群动态及生物地理格局。结果表明：云南地区过去被鉴定为中华姬鼠的样品均属于澜沧江姬鼠，澜沧江姬鼠与中华姬鼠间的遗传距离（K2P-ds+v）达到0.091，显著超过姬鼠属内种间差距（0.080），支持澜沧江姬鼠独立种的地位；该种不同地理种群可大致以澜沧江为界分为两大支系，且每个支系又各分为两个亚支系；进一步的AMOVA分析表明遗传变异主要来源于两大支系之间，而错配分析与Fu`Fs检验表明澜沧江姬鼠各地理种群及其两个支系都经历过多次扩张事件，这可能是和冰期与间冰期的轮回交替有关；分子系统树和中介网络图表明地理环境的隔离对于澜沧江姬鼠种群分化存在明显影响，其中澜沧江的阻隔作用最为显著。基于松散分子钟（Relax molecular clock）分析，中华姬鼠和澜沧江姬鼠的分歧时间大约在2.98 Ma（95％HPD: 4.32-1.88），而澜沧江姬鼠则在1.13 Ma（95％HPD: 1.95-0.65）分成两个支系。按照平均分歧时间来看，澜沧江姬鼠两个支系的的分歧事件发生在鄱阳冰期（1.2-0.9 Ma），两个支系内部进一步分化为两支的时间非常接近，分别为：Clade 1中为0.67 Ma （95％HPD: 1.17-0.34）和Clade 2 中为0.64 Ma (95％HPD: 1.17-0.36)，这种隔离种群各自产生分化的时间却非常接近，这提示其分化事件可能是受到古气候如冰期或间冰期的影响所产生。

EFFECT OF IMAGE FORCES ON ELECTRONS CONFINED IN LOW-DIMENSIONAL STRUCTURES UNDER A MAGNETIC-FIELD

We consider the effect of image forces, arising due to a difference in dielectric permeabilities of the well layer and barrier layers, on the energy spectrum of an electron confined in a rectangular potential well under a magnetic field. Depending on the value and the sign of the dielectric mismatch, image forces can localize electrons near the interfaces of the well or in well centre and change the direct intersubband gaps into indirect ones. These effects can be controlled by variation of the magnetic field, offering possibilities for exact tuning of electronic devices.

LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES

The GaInAsSb/AlGaAsSb/GaSb heterostructures were grown by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, electroprobe microanalysis (EPMA), double-crystal X-ray diffraction, capacitance-voltage (C-V) and Van der Pauw measurments, infrared absorption spectra, photoluminescence and laser Raman scattering. The results show that the materials have fine surface morphology, low lattice mismatch and good homogeneity. Room-temperature light-emitting diodes with an emission wavelength of 2.2-mu-m were obtained by using the GaInAsSb/AlGaAsSb DH structures.

Properties of cubic GaN grown by MBE

We review our investigation of cubic GaN films on (001) GaAs, focusing on the structural, optical, and electrical properties of these films. Cubic GaN films grown epitaxially on GaAs suffer from the large lattice mismatch between these two materials in that they contain extremely high densities of structural defects. Surprisingly, the optical quality of these films does not seem much affected by the presence of defects, as intense photoluminescence is detected a? room temperature and above. Finally, the rather high background electron concentrations in our films is shown to be a consequence of contamination with O and not to be an intrinsic property of cubic phase GaN. (C) 1997 Elsevier Science S.A.

Design of a Tapered Lens for Semiconductor Laser to Single-Mode Fiber Coupling

The theoretical investigation of the coupling efficiency of a laser diode to a single mode fiber via a hemispherical lens on the tip of the tapered fiber in the presence of possible transverse offset and angular mismatch is reported.Without the misalignment,coupling efficiency increases with the decreasing of taper length.With the misalignment,this relation is that the coupling efficiency decreases with each kind of offset.

A model of dislocations at the interface of the bonded wafers

Wafer bonding is regardless of lattice mismatch in the integration of dissimilar semiconductor materials. This technology differs from the heteroepitaxy mainly in the mechanism of generating dislocations at the interface. A model of dislocations at the bonded interface is proposed in this paper. Edge-like dislocations, which most efficiently relax the strain, are predominant at the bonded interface. But the thermal stress associated with large thermal expansion misfit may drive dislocations away from the bonded interface upon cooling.

An investigation on fiber coupled polymer waveguide for electro-optic modulator

A novel crosslinkable polyurethane is used as the core layer of the electro-optic(E-O) modulator. The refractive index and dispersion of this material have been detected by analyzing the F-P oscillation in transmission spectra. Calculated results from the effective index method are given to design the Mach-Zehnder and straight 5-layer ridge wave-guide device (including the metal electrodes). With light at 1.31 mum being fiber coupled into waveguide, the mode properties of these devices have been demonstrated in a micron control system. The guided mode is accordant with the theoretical analysis.