935 resultados para Eu2O3 insulator layer


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The dielectric strength of films made from poly(ethylene terephthalate) (PET) coated with a thin layer of polyaniline (PANI) was studied. The PANI layer was deposited on the PET films by the 'in situ' chemical polymerization method. The PANI layer of the PANI/PET films was undoped in NH4OH 0.1 M solution and re-doped with aqueous HCl solution under different pH values varying from 1 to 10. Electric breakdown measurements were performed by applying a voltage ramp and the results showed a dependence of the dielectric strength on the pH of the doping solution due to the changes in the electrical conductivity of the PANI layer. The dielectric strength of PET/PANI films treated under higher pH conditions showed an electric strength about 30% larger than the PET films, since it leads to a non-conductive PANI layer.

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The interactions governing adsorption of layer-by-layer (LBL) films from an azopolymer, PS-119(R), and poly(allylamine hydrochloride) (PAH) have been controlled by modifying the pH of the solutions used to form the films. The thickness per bilayer was varied by one order of magnitude, from 10 to 240 A, as the pH changed from 4 to 10. Thick layers were formed at higher pHs because in this case the PAH is only partially charged adopting a loopy conformation. This change in molecular conformation caused the kinetics of isomerization and mass transport to be much slower than at lower pHs. The writing time defined as the time to achieve 50% of maximum birefringence dropped from 110 to 18 min for films prepared from solutions with pH 10 and pH 4, respectively. This decrease is probably due to the higher free volume for isomerization in the films prepared at lower pHs, in which PAH molecules are less coiled than at higher pHs. For the same reason, the rate of inscription of surface-relief gratings with an interference pattern of p-polarized light was also much slower at higher pHs. (C) 2003 Elsevier B.V. All rights reserved.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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The adsorption process in layer-by-layer (LBL) films of poly(o-methoxyaniline) alternated with poly(vinyl sulfonic acid) is explained using the Avrami equation. This equation was used due to its mathematical simplicity and adequate description of experimental data in real polymer systems. The Avrami parameters are a convenient means to represent empirical data of crystallization, and if microscopic knowledge is available these parameters can also be associated with adsorption mechanisms. The growth of spherulites in the LBL films was studied as a function of time using atomic force microscopy and the data were used to estimate the number and radii of aggregates, from which the Avrami parameters were determined. We find that the adsorption mechanism may correspond to a tri dimensional, diffusion-controlled growth, with increasing nucleation rate, consistent with results from kinetics of adsorption.

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Nowadays solid state chemists have the possibility of work with low temperature strategies to obtain solid state materials with appropriate physical and chemical properties for useful technological applications. Photonic core shell materials having a core and shell domains composed by a variety of compounds have been synthesized by different methods. In this work we used silica-germania soot prepared by vapor-phase axial deposition as a core where a nanoshell of Eu2O3 was deposited. A new sol-gel like method was used to obtain the Eu2O3 nanoshell coating the SiO2-GeO2 particles, which was prepared by the polymeric precursor method. The photophysical properties of Eu3+ were used to obtain information about the rare earth surrounding in the SiO2-GeO2@Eu2O3 material during the sintering process. The sintering process was followed by the luminescence spectra of Eu3+ and all the samples present the characteristic emission related to the D-5(0) -> F-7(J) (J=0, 1, 2, 3 and 4). The ratios of the D-5(0) -> F-7(2)/D-5(0) -> F-7(1) emission intensity for the SiO2-GeO2@Eu2O3 systems were calculated and it was observed an increase in its values, indicating a low symmetry around the Eu3+ as the temperature increases.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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In this work, a SiO2 spherical were prepared by the Stober Method and then recovered with a single layer of Eu2O3 oxide (SiO2@Eu2O3) obtained by the Polymeric Precursor Method. The SiO2@Eu2O3 powder was heated treated at 100, 300, 400, 500 and 800 A degrees C. The samples were characterized by the Scanning Electonic Microscopy (SEM), Thermal Analysis (TGA/DTA), and the luminescent properties of the SiO2@Eu2O3 powders were studied by their emission and excitation spectra as well as by the lifetime measurements of the Eu3+ D-5(0) -> aEuro parts per thousand F-7(2) transition. The SEM analysis shows that the silica prepared by the Stober Method is spherical with a particle size of 460 nm. The emission spectra of the SiO2@Eu2O3 powders presented the Eu3+ characteristics bands related to the D-5(0) -> aEuro parts per thousand F-7(J) (J = 0, 1, 2, 3, 4) transitions at 577, 591, 616, 649 and 695 nm, respectively. The band related to the D-5(0) -> aEuro parts per thousand F-7(2) transition is the most intense in the spectra, and its intensity decreases with the temperature enhancement. The decay curves of the SiO2@Eu2O3 samples presented monoexponential features, and the obtained lifetime values were higher than the Eu2O3 oxide. It was possible to conclude that the D-5(0) -> aEuro parts per thousand F-7(2) hypersensitive transition is strongly dependent on the Eu3+ surrounding.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, the intimate metal-insulator and metal-oxide-insulator contact are discussed. Further, the steady-state characteristics of metal-oxide-insulator-metal structures are also discussed. Oxide is an insulator with wider energy band gap (about 50 Å thick). A uniform energetic distribution of impurities is considered in addition to impurities at a single energy level inside the surface charge region at the oxide-insulator interface. Analytical expressions are presented for electrical potential, field, thickness of the depletion region, capacitance, and charge accumulated in the surface charge region. The electrical characteristics are compared with reference to relative densities of two types of impurities. ln I is proportional to the square root of applied potential if energetically distributed impurities are relatively important. However, distribution of the electrical potential is quite complicated. In general energetically distributed impurities can considerably change the electrical characteristics of these structures.

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An experimental model and a mathematical model with the introduction of a ramp in the channel of Obenaus model are presented. The aim is to present a better reproduction of the real layer pollution deposited on the HV insulators. This better reproduction is obtained from two types of thickness variation: the introduction of a ramp (soft variation) and the introduction of a step (sudden variation). The computational simulations and the experimental data suggest that the introduction of the ramp is the better reproduction of the layer pollution. The ramp approximates to the real layer pollution more than the step.

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We discuss non-steady state electrical characteristics of a metal-insulator-metal structure. We consider an exponential distribution (in energy) of impurity states in addition to impurity states at a single energy level within the depletion region. We discuss thermal as well as isothermal characteristics and present an expression for the temperature of maximum current (Tm) and a method to calculate the density of exponentially distributed impurity states. We plot the theoretical curves for various sets of parameters and the variation of Tm, and Im (maximum current) with applied potential for various impurity distributions. The present model can explain the available experimental results. Finally we compare the non-steady state characteristics in three cases: (i) impurity states only at a single energy level, (ii) uniform energetic distribution of impurity states, and (iii) exponential energetic distribution of impurity states.

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This paper presents a viscous three-dimensional simulations coupling Euler and boundary layer codes for calculating flows over arbitrary surfaces. The governing equations are written in a general non orthogonal coordinate system. The Levy-Lees transformation generalized to three-dimensional flows is utilized. The inviscid properties are obtained from the Euler equations using the Beam and Warming implicit approximate factorization scheme. The resulting equations are discretized and approximated by a two-point fmitedifference numerical scheme. The code developed is validated and applied to the simulation of the flowfield over aerospace vehicle configurations. The results present good correlation with the available data.

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It's believed that the simple Su-Schrieffer-Heeger Hamiltonian can not predict the insulator to metal transition of transpolyacetylene (t-PA). The soliton lattice configuration at a doping level y=6% still has a semiconductor gap. Disordered distributions of solitons close the gap, but the electronic states around the Fermi energy are localized. However, within the same framework, it is possible to show that a cluster of solitons can produce dramatic changes in the electronic structure, allowing an insulator-to-metal transition.