Modelling of the influence of the layer pollution thickness in high voltage polluted insulators


Autoria(s): do Prado, A. J.; Astorga, O. A M
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

27/05/2014

27/05/2014

01/12/1995

Resumo

An experimental model and a mathematical model with the introduction of a ramp in the channel of Obenaus model are presented. The aim is to present a better reproduction of the real layer pollution deposited on the HV insulators. This better reproduction is obtained from two types of thickness variation: the introduction of a ramp (soft variation) and the introduction of a step (sudden variation). The computational simulations and the experimental data suggest that the introduction of the ramp is the better reproduction of the layer pollution. The ramp approximates to the real layer pollution more than the step.

Formato

508-512

Identificador

http://dx.doi.org/10.1109/ICSD.1995.523038

IEEE International Conference on Conduction & Breakdown in Solid Dielectrics, p. 508-512.

http://hdl.handle.net/11449/64674

10.1109/ICSD.1995.523038

WOS:A1995BD97L00099

2-s2.0-0029483857

Idioma(s)

eng

Relação

IEEE International Conference on Conduction & Breakdown in Solid Dielectrics

Direitos

closedAccess

Palavras-Chave #Algorithms #Approximation theory #Computational methods #Computer simulation #Electric discharges #Electric resistance #Flashover #Geometry #Mathematical models #Pollution #High voltage polluted insulators #Obenaus model #Voltage polarity #Electric insulating materials
Tipo

info:eu-repo/semantics/conferencePaper