6-T SRAM cell design with nanoscale double-gate SOI MOSFETs: impact of source/drain engineering and circuit topology

The impact of source/drain engineering on the performance of a six-transistor (6-T) static random access memory (SRAM) cell, based on 22 nm double-gate (DG) SOI MOSFETs, has been analyzed using mixed-mode simulation, for three different circuit topologies for low voltage operation. The trade-offs associated with the various conflicting requirements relating to read/write/standby operations have been evaluated comprehensively in terms of eight performance metrics, namely retention noise margin, static noise margin, static voltage/current noise margin, write-ability current, write trip voltage/current and leakage current. Optimal design parameters with gate-underlap architecture have been identified to enhance the overall SRAM performance, and the influence of parasitic source/drain resistance and supply voltage scaling has been investigated. A gate-underlap device designed with a spacer-to-straggle (s/sigma) ratio in the range 2-3 yields improved SRAM performance metrics, regardless of circuit topology. An optimal two word-line double-gate SOI 6-T SRAM cell design exhibits a high SNM similar to 162 mV, I-wr similar to 35 mu A and low I-leak similar to 70 pA at V-DD = 0.6 V, while maintaining SNM similar to 30% V-DD over the supply voltage (V-DD) range of 0.4-0.9 V.

External circuit system effects on chlorine plasma instabilities

The effects of the external circuit on plasma instabilities in all inductive plasma source are investigated. The instabilities are found to be asymmetric with respect to the circuit input impedance. A simplified model of the antenna-plasnia coupling provides an explanation of the asymetry.

Tailoring the AMC and EBG characteristics of periodic metallic arrays printed on grounded dielectric substrate

The artificial magnetic conductor (AMC) and electromagnetic band gap (EBG) characteristics of planar periodic metallic arrays printed on grounded dielectric substrate are investigated. The currents induced on the arrays are presented for the first time and their study reveals two distinct resonance phenomena associated with these surfaces. A new technique is presented to tailor the spectral position of the AMC operation and the EBG. Square patch arrays with fixed element size and variable periodicities are employed as working examples to demonstrate the dependence of the spectral AMC and EBG characteristics on array parameters. It is revealed that as the array periodicity is increased, the AMC frequency is increased, while the EBG frequency is reduced. This is shown to occur due to the different nature of the resonance phenomena and the associated underlying physical mechanisms that produce the two effects. The effect of substrate thickness is also investigated. Full wave method of moments (MoM) has been employed for the derivation of the reflection characteristics, the currents and the dispersion relations. A uniplanar array with simultaneous AMC and EBG operation is demonstrated theoretically and experimentally.

Periodically loaded dipole array supporting left-handed propagation

Periodically loaded dipole arrays printed on grounded dielectric substrate are shown to exhibit left-handed propagation properties. In an equivalent transmission line representation, lefthandedness emerges due to the excess series capacitance and shunt inductance. Based on this concept, the authors study the distribution of the modal fields and the variation of series capacitance and shunt inductance as the dipoles are loaded with stubs. Full wave dispersion curves that show the gradual transition from a right-handed to a left-handed medium upon periodically loading the dipoles with stubs are presented. An equivalent circuit is derived that matches to a very good extent the full wave result. The cell dimensions are a small fraction of the wavelength (),15), so the structure can be considered as an equivalent homogeneous surface. The structure is simple, readily scalable to higher frequencies and compatible with low-cost fabrication techniques.

Current transients in the small salient-pole alternator caused by sudden short-circuit and synchronisation events

Small salient-pole machines, in the range 30 kVA to 2 MVA, are often used in distributed generators, which in turn are likely to form the major constituent of power generation in power system islanding schemes or microgrids. In addition to power system faults, such as short-circuits, islanding contains an inherent risk of out-of-synchronism re-closure onto the main power system. To understand more fully the effect of these phenomena on a small salient-pole alternator, the armature and field currents from tests conducted on a 31.5 kVA machine are analysed. This study demonstrates that by resolving the voltage difference between the machine terminals and bus into direct and quadrature axis components, interesting properties of the transient currents are revealed. The presence of saliency and short time-constants cause intriguing differences between machine events such as out-of-phase synchronisations and sudden three-phase short-circuits.

Effects of Geometrical Discontinuities on Distributed Passive Intermodulation in Printed Lines

This paper presents the results of experimental study of passive intermodulation (PIM) generation in microstrip lines with U-shaped and meandered strips, impedance tapers, and strips with the profiled edges. It is shown that the geometrical discontinuities in printed circuits may have a noticeable impact on distributed PIM generation even when their effect is indiscernible in the linear regime measurements. A consistent interpretation of the observed phenomena has been proposed on the basis of the phase synchronism in the four-wave mixing process. The results of this study reveal new features of PIM production important for the design and characterization of low-PIM microstrip circuits. © 2010 IEEE.