983 resultados para Pre-registration


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We present a novel method to perform an accurate registration of 3-D nonrigid bodies by using phase-shift properties of the dual-tree complex wavelet transform (DT-CWT). Since the phases of DT-\BBCWT coefficients change approximately linearly with the amount of feature displacement in the spatial domain, motion can be estimated using the phase information from these coefficients. The motion estimation is performed iteratively: first by using coarser level complex coefficients to determine large motion components and then by employing finer level coefficients to refine the motion field. We use a parametric affine model to describe the motion, where the affine parameters are found locally by substituting into an optical flow model and by solving the resulting overdetermined set of equations. From the estimated affine parameters, the motion field between the sensed and the reference data sets can be generated, and the sensed data set then can be shifted and interpolated spatially to align with the reference data set. © 2011 IEEE.

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We present a video-based system which interactively captures the geometry of a 3D object in the form of a point cloud, then recognizes and registers known objects in this point cloud in a matter of seconds (fig. 1). In order to achieve interactive speed, we exploit both efficient inference algorithms and parallel computation, often on a GPU. The system can be broken down into two distinct phases: geometry capture, and object inference. We now discuss these in further detail. © 2011 IEEE.

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This paper presents a method for vote-based 3D shape recognition and registration, in particular using mean shift on 3D pose votes in the space of direct similarity transforms for the first time. We introduce a new distance between poses in this spacethe SRT distance. It is left-invariant, unlike Euclidean distance, and has a unique, closed-form mean, in contrast to Riemannian distance, so is fast to compute. We demonstrate improved performance over the state of the art in both recognition and registration on a real and challenging dataset, by comparing our distance with others in a mean shift framework, as well as with the commonly used Hough voting approach. © 2011 IEEE.

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This chapter presents a method for vote-based 3D shape recognition and registration, in particular using mean shift on 3D pose votes in the space of direct similarity transformations for the first time. We introduce a new distance between poses in this spacethe SRT distance. It is left-invariant, unlike Euclidean distance, and has a unique, closed-form mean, in contrast to Riemannian distance, so is fast to compute. We demonstrate improved performance over the state of the art in both recognition and registration on a (real and) challenging dataset, by comparing our distance with others in a mean shift framework, as well as with the commonly used Hough voting approach. © 2013 Springer-Verlag Berlin Heidelberg.

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One of the limits on the maximum fuel efficiency benefit to be gained from turbocharged, downsized gasoline engines is the occurrence of pre-ignitions at low engine speed. These pre-ignitions may lead to high pressures and extreme knock (megaknock or superknock) which can cause severe engine damage. Though the mechanism leading to megaknock is not completely resolved, pre-ignitions are thought to arise from local autoignition of areas in the cylinder which are rich in low ignition delay "contaminants" such as engine oil and/or heavy ends of gasoline. These contaminants are introduced to the combustion chamber at various points in the engine cycle (e.g. entering from the top land crevice during blow-down or washed from the cylinder walls during DI wall impingement). This paper presents results from tests in which model "contaminants", consisting of engine lubricant base stocks, base stocks mixed with fuel and base stocks mixed with one or more additives were injected directly into a test engine to determine their propensity to ignite. The ignition tendency was found to be lower for less reactive base stocks and for base stocks mixed with certain additives. Further, when small amounts of fuel were mixed with relatively non-ignitive lubricant base stocks the ignition tendency was found to increase significantly. These results may guide development of new lubricants which could be used to reduce megaknock in downsized engines. Copyright © 2014 SAE International.

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Members of the SR family of pre-mRNA splicing factors are phosphoproteins that share a phosphoepitope specifically recognized by monoclonal antibody (mAb) 104. Recent studies have indicated that phosphorylation may regulate the activity and the intracellular localization of these splicing factors. Here, we report the purification and kinetic properties of SR protein kinase 1 (SRPK1), a kinase specific for SR family members. We demonstrate that the kinase specifically recognizes the SR domain, which contains serine/arginine repeats. Previous studies have shown that dephosphorylated SR proteins did not react with mAb 104 and migrated faster in SDS gels than SR proteins from mammalian cells. We show that SRPK1 restores both mobility and mAB 104 reactivity to a SR protein SF2/ASF (splicing factor 2/alternative splicing factor) produced in bacteria, suggesting that SRPK1 is responsible for the generation of the mAb 104-specific phosphoepitope in vivo. Finally, we have correlated the effects of mutagenesis in the SR domain of SF2/ASF on splicing with those on phosphorylation of the protein by SRPK1, suggesting that phosphorylation of SR proteins is required for splicing.

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Electron irradiation-induced deep level defects have been studied in InP which has undergone high-temperature annealing in phosphorus and iron phosphide ambients, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and phosphorus ambient annealed InP, InP pre-annealed in iron phosphide ambient has a very low concentration of defects. The phenomenon has been explained in terms of a faster recombination of radiation-induced defects in the annealed InP. The radiation-induced defects in the annealed InP have been compared and studied. (c) 2006 Elsevier Ltd. All rights reserved.

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Polycrystalline Si nanowires (poly SiNWS) were successfully synthesized by plasma-enhanced chemical vapor deposition (PECVD) at 440degreesC using silane as the Si source and Au as the catalyst. The diameters of Si nanowires range from 15 to 100nm. The growth process indicates that to fabricate SiNWS by PECVD, pre-annealing at high temperature is necessary. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique. (C) 2002 Elsevier Science B.V. All rights reserved.

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Carbon ions were implanted into crystal Si to a concentration of (0.6-1.5)at% at room temperature. Some samples were pre-irradiated with S-29(i)+ ions, while others were not pre-irradiated. Then the two kinds of samples were implanted with C-12(+) ions simultaneously, and Si1-xCx alloys were grown by solid phase epitaxy with high-temperature annealing. The effects of preirradiation on the formation of Si1-xCx alloys were studied. If the dose of implanted C ion was less than that for amorphizing Si crystals, the implanted C atoms would like to combine with defects produced during implantation, and then it was difficult for Si1-xCx alloys to form after annealine, at 950 degreesC. Pre-irradiation was advantageous for Si1-xCx alloy formation. With the increase of C ion dose, the damage produced by C ions increased. Pre-irradiation was unfavorable for Si1-xCx, alloy formation. If the implanted C concentration was higher than that for solid phase epitaxy solution, only part of the implanted C atoms form Si1-xCx alloys and the effects of pre-irradiation could be neglected. As the annealing temperature was increased to 1050 degreesC, Si1-xCx alloys in both pre-irradiated and unpreirradiated samples of low C concentration remained, whereas most part of Si1-xCx alloys in samples with high C concentration vanished.

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A novel low temperature direct wafer bonding technology employing vacuum-cavity pre-bonding is proposed and applied in bonding of InGaAs/Si couple wafers under 300 degrees C and InP/GaAs couple wafers under 350 degrees C. Aligning accuracy of 0.5 mu m is achieved. During wafer bonding process the pressure on the couple wafers is 10MPa. The interface energy is sufficiently high to allow thinning of the wafers down from 350um to about 100um. And the tensile strength test indicates the bonding energy of bonded samples is about equal to the bonded samples at 550 degrees C.

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Electron irradiation-induced deep level defects have been studied in InP which has undergone high-temperature annealing in phosphorus and iron phosphide ambients, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and phosphorus ambient annealed InP, InP pre-annealed in iron phosphide ambient has a very low concentration of defects. The phenomenon has been explained in terms of a faster recombination of radiation-induced defects in the annealed InP. The radiation-induced defects in the annealed InP have been compared and studied. (c) 2006 Elsevier Ltd. All rights reserved.