Design of a CMOS amplifier for breast cancer detection

A transimpedance amplifier (TIA) is used, in radiation detectors like the positron emission tomography(PET), to transform the current pulse produced by a photo-sensitive device into an output voltage pulse with a desired amplitude and shape. The TIA must have the lowest noise possible to maximize the output. To achieve a low noise, a circuit topology is proposed where an auxiliary path is added to the feedback TIA input, In this auxiliary path a differential transconductance block is used to transform the node voltage in to a current, this current is then converted to a voltage pulse by a second feedback TIA complementary to the first one, with the same amplitude but 180º out of phase with the first feedback TIA. With this circuit the input signal of the TIA appears differential at the output, this is used to try an reduced the circuit noise. The circuit is tested with two different devices, the Avalanche photodiodes (APD) and the Silicon photomultiplier (SIPMs). From the simulations we find that when using s SIPM with Rx=20kΩ and Cx=50fF the signal to noise ratio is increased from 59 when using only one feedback TIA to 68.3 when we use an auxiliary path in conjunction with the feedback TIA. This values where achieved with a total power consumption of 4.82mv. While the signal to noise ratio in the case of the SIPM is increased with some penalty in power consumption.

Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

Structural, electronic, and optical properties of amorphous and transparent zinc tin oxide films deposited on glass substrates by pulsed laser deposition (PLD) were examined for two chemical compositions of Zn:Sn=1:1 and 2:1 as a function of oxygen partial pressure PO2 used for the film deposition and annealing temperature. Different from a previous report on sputter-deposited films Chiang et al., Appl. Phys. Lett. 86, 013503 2005 , the PLD-deposited films crystallized at a lower temperature 450 °C to give crystalline ZnO and SnO2 phases. The optical band gaps Tauc gaps were 2.80−2.85 eV and almost independent of oxygen PO2 , which are smaller than those of the corresponding crystals 3.35−3.89 eV . Films deposited at low PO2 showed significant subgap absorptions, which were reduced by postthermal annealing. Hall mobility showed steep increases when carrier concentration exceeded threshold values and the threshold value depended on the film chemical composition. The films deposited at low PO2 2 Pa had low carrier concentrations. It is thought that the low PO2 produced high-density oxygen deficiencies and generated electrons, but these electrons were trapped in localized states, which would be observed as the subgap absorptions. Similar effects were observed for 600 °C crystallized films and their resistivities were increased by formation of subgap states due to the reducing high-temperature condition. High carrier concentrations and large mobilities were obtained in an intermediate PO2 region for the as-deposited films.

A Comaparison Study of EM and Physical Equivalent Circuit Modeling for MIM CMOS Capacitors

In this Letter a new physical model for metal-insulatormetal CMOS capacitors is presented. In the model the parameters of the circuit are derived from the physical structural details. Physical behaviors due to metal skin effect and inductance have been considered. The model has been confirmed by 3D EM simulator and design rules proposed. The model presented is scalable with capacitor geometry, allowing designers to predict and optimize quality factor. The approach has been verified for MIM CMOS capacitors

Development of p-type transparent semiconducting oxides for thin film transistor applications

Semiconductor physics has developed significantly in the field of re- search and industry in the past few decades due to it’s numerous practical applications. One of the relevant fields of current interest in material science is the fundamental aspects and applications of semi- conducting transparent thin films. Transparent conductors show the properties of transparency and conductivity simultaneously. As far as the band structure is concerned, the combination of the these two properties in the same material is contradictory. Generally a trans- parent material is an insulator having completely filled valence and empty conduction bands. Metallic conductivity come out when the Fermi level lies within a band with a large density of states to provide high carrier concentration. Effective transparent conductors must nec- essarily represent a compromise between a better transmission within the visible spectral range and a controlled but useful electrical con- ductivity [1–6]. Generally oxides like In2O3, SnO2, ZnO, CdO etc, show such a combination. These materials without any doping are insulators with optical band gap of about 3 eV. To become a trans- parent conductor, these materials must be degenerately doped to lift the Fermi level up into the conduction band. Degenerate doping pro- vides high mobility of extra carriers and low optical absorption. The increase in conductivity involves an increase in either carrier concen- tration or mobility. Increase in carrier concentration will enhance the absorption in the visible region while increase in mobility has no re- verse effect on optical properties. Therefore the focus of research for new transparent conducting oxide (TCO) materials is on developing materials with higher carrier mobilities.

Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on discrete isolated charge storage nodules which have the potential of pushing further the scalability of conventional NVMs. Quantum dot memories offer lower operating voltages as compared to conventional floating-gate (FG) Flash memories due to thinner tunnel dielectrics which allow higher tunneling probabilities. The isolated charge nodules suppress charge loss through lateral paths, thereby achieving a superior charge retention time. Despite the considerable amount of efforts devoted to the study of nanocrystal Flash memories, the charge storage mechanism remains obscure. Interfacial defects of the nanocrystals seem to play a role in charge storage in recent studies, although storage in the nanocrystal conduction band by quantum confinement has been reported earlier. In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. The trapping effect is eliminated when nc-Ge is synthesized in forming gas thus excluding the possibility of quantum confinement and Coulomb blockade effects. Through discharging kinetics, the model of deep level trap charge storage is confirmed. The trap energy level is dependent on the matrix which confines the nc-Ge.

Equipos didácticos multimedia para la enseñanza de las famílias lógicas : pmos, nmos y cmos.

En el día a día del aula universitaria, se ha hecho necesario el uso de diferente material de apoyo a la docencia. Para el estudio en profundidad de la familia Mos, se ha desarrollado un libro teórico y uno de los complementos con unos programas tutores de elaboración propia que ofrecen al estudiante un nuevo punto de vista basaso en la interactividad para ayudar a comprenderlos y sirviéndose, al mismo tiempo, de tutoría y autoevaluación.

El transistor como caja negra.

Estudio sobre el funcionamiento del transistor basándose en el aspecto utilitario o externo, tratando el transistor como una caja opaca, es decir, sin abrirlo y sin estudiar sus componentes internos, sino a través de ecuaciones físicas.

WTROPIC : um gerador automático de macro células CMOS acessível via WWW

Este trabalho apresenta a pesquisa e o desenvolvimento da ferramenta para geração automática de leiautes WTROPIC. O WTROPIC é uma ferramenta para a geração remota, acessível via WWW, de leiautes para circuitos CMOS adequada ao projeto FUCAS e ao ambiente CAVE. O WTROPIC foi concebido a partir de otimizações realizadas na versão 3 da ferramenta TROPIC. É mostrado também, como as otimizações no leiaute do TROPIC foram implementadas e como essas otimizações permitem ao WTROPIC cerca de 10% de redução da largura dos circuitos gerados em comparação ao TROPIC. Como o TROPIC, o WTROPIC é um gerador de macro células CMOS independente de biblioteca. Apresenta-se também, como a ferramenta WTROPIC foi integrada ao ambiente de concepção de circuitos CAVE, as mudanças propostas para metodologia de integração de ferramentas do CAVE que conduzem a uma melhora na qualidade de integração e a padronização das interfaces de usuário e como a síntese física de um leiaute pode ser então realizada remotamente. Dessa maneira, obteve-se uma ferramenta para a concepção de leiautes disponível a qualquer usuário com acesso a internet, mesmo que esse usuário não disponha de uma máquina com elevada capacidade de processamento, normalmente exigido por ferramentas de CAD.

Estimativa de capacitâncias e consumo de potência em circuitos combinacionais CMOS no nível lógico

Esta tese propõe o desenvolvimento de um método de estimativa de capacitâncias e de potência consumida nos circuitos combinacionais CMOS, no nível de portas lógicas. O objetivo do método é fazer uma previsão do consumo de potência do circuito na fase de projeto lógico, o que permitirá a aplicação de técnicas de redução de potência ou até alteração do projeto antes da geração do seu leiaute. A potência dinâmica consumida por circuitos CMOS depende dos seguintes parâmetros: tensão de alimentação, freqüência de operação, capacitâncias parasitas e atividades de comutação em cada nodo do circuito. A análise desenvolvida na Tese, propõe que a potência seja dividida em duas componentes. A primeira componente está relacionada ao consumo de potência devido às capacitâncias intrínsecas dos transistores, que por sua vez estão relacionadas às dimensões dos transistores. Estas capacitâncias intrínsecas são concentradas nos nodos externos das portas e manifestam-se em função das combinações dos vetores de entrada. A segunda componente está relacionada às interconexões entre as células do circuito. Para esta etapa utiliza-se a estimativa do comprimento médio das interconexões e as dimensões tecnológicas para estimar o consumo de potência. Este comprimento médio é estimado em função do número de transistores e fanout das várias redes do circuito. Na análise que trata das capacitâncias intrínsecas dos transistores os erros encontrados na estimativa da potência dissipada estão no máximo em torno de 11% quando comparados ao SPICE. Já na estimativa das interconexões a comparação feita entre capacitâncias de interconexões estimadas no nível lógico e capacitâncias de interconexões extraídas do leiaute apresentou erros menores que 10%.

Automatic layout generation of static CMOS circuits targeting delay and power

The evolution of integrated circuits technologies demands the development of new CAD tools. The traditional development of digital circuits at physical level is based in library of cells. These libraries of cells offer certain predictability of the electrical behavior of the design due to the previous characterization of the cells. Besides, different versions of each cell are required in such a way that delay and power consumption characteristics are taken into account, increasing the number of cells in a library. The automatic full custom layout generation is an alternative each time more important to cell based generation approaches. This strategy implements transistors and connections according patterns defined by algorithms. So, it is possible to implement any logic function avoiding the limitations of the library of cells. Tools of analysis and estimate must offer the predictability in automatic full custom layouts. These tools must be able to work with layout estimates and to generate information related to delay, power consumption and area occupation. This work includes the research of new methods of physical synthesis and the implementation of an automatic layout generation in which the cells are generated at the moment of the layout synthesis. The research investigates different strategies of elements disposition (transistors, contacts and connections) in a layout and their effects in the area occupation and circuit delay. The presented layout strategy applies delay optimization by the integration with a gate sizing technique. This is performed in such a way the folding method allows individual discrete sizing to transistors. The main characteristics of the proposed strategy are: power supply lines between rows, over the layout routing (channel routing is not used), circuit routing performed before layout generation and layout generation targeting delay reduction by the application of the sizing technique. The possibility to implement any logic function, without restrictions imposed by a library of cells, allows the circuit synthesis with optimization in the number of the transistors. This reduction in the number of transistors decreases the delay and power consumption, mainly the static power consumption in submicrometer circuits. Comparisons between the proposed strategy and other well-known methods are presented in such a way the proposed method is validated.

Design of boundary-scan testing in CMOS image sensors for industrial applications: internship repor

Tests on printed circuit boards and integrated circuits are widely used in industry,resulting in reduced design time and cost of a project. The functional and connectivity tests in this type of circuits soon began to be a concern for the manufacturers, leading to research for solutions that would allow a reliable, quick, cheap and universal solution. Initially, using test schemes were based on a set of needles that was connected to inputs and outputs of the integrated circuit board (bed-of-nails), to which signals were applied, in order to verify whether the circuit was according to the specifications and could be assembled in the production line. With the development of projects, circuit miniaturization, improvement of the production processes, improvement of the materials used, as well as the increase in the number of circuits, it was necessary to search for another solution. Thus Boundary-Scan Testing was developed which operates on the border of integrated circuits and allows testing the connectivity of the input and the output ports of a circuit. The Boundary-Scan Testing method was converted into a standard, in 1990, by the IEEE organization, being known as the IEEE 1149.1 Standard. Since then a large number of manufacturers have adopted this standard in their products. This master thesis has, as main objective: the design of Boundary-Scan Testing in an image sensor in CMOS technology, analyzing the standard requirements, the process used in the prototype production, developing the design and layout of Boundary-Scan and analyzing obtained results after production. Chapter 1 presents briefly the evolution of testing procedures used in industry, developments and applications of image sensors and the motivation for the use of architecture Boundary-Scan Testing. Chapter 2 explores the fundamentals of Boundary-Scan Testing and image sensors, starting with the Boundary-Scan architecture defined in the Standard, where functional blocks are analyzed. This understanding is necessary to implement the design on an image sensor. It also explains the architecture of image sensors currently used, focusing on sensors with a large number of inputs and outputs.Chapter 3 describes the design of the Boundary-Scan implemented and starts to analyse the design and functions of the prototype, the used software, the designs and simulations of the functional blocks of the Boundary-Scan implemented. Chapter 4 presents the layout process used based on the design developed on chapter 3, describing the software used for this purpose, the planning of the layout location (floorplan) and its dimensions, the layout of individual blocks, checks in terms of layout rules, the comparison with the final design and finally the simulation. Chapter 5 describes how the functional tests were performed to verify the design compliancy with the specifications of Standard IEEE 1149.1. These tests were focused on the application of signals to input and output ports of the produced prototype. Chapter 6 presents the conclusions that were taken throughout the execution of the work.

A multisampling time-domain CMOS imager with synchronous readout circuit

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Low voltage four-quadrant current multiplier: An improved topology for n-well CMOS process

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

An algorithmic of analog-to-digital converter using current-mode and digital CMOS process

In this paper a new algorithmic of Analog-to-Digital Converter is presented. This new topology use the current-mode technique that allows a large dynamic range and can be implemented in digital CMOS process. The ADC proposed is very small and can handle high sampling rates. Simulation results using a 1.2um CMOS process show that an 8-b ADC can support a sampling rate of 50MHz.

Low voltage four-quadrant current multiplier: an improved topology for n-well CMOS process

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)