Risk sensitivity in a motor task with speed-accuracy trade-off.

When a racing driver steers a car around a sharp bend, there is a trade-off between speed and accuracy, in that high speed can lead to a skid whereas a low speed increases lap time, both of which can adversely affect the driver's payoff function. While speed-accuracy trade-offs have been studied extensively, their susceptibility to risk sensitivity is much less understood, since most theories of motor control are risk neutral with respect to payoff, i.e., they only consider mean payoffs and ignore payoff variability. Here we investigate how individual risk attitudes impact a motor task that involves such a speed-accuracy trade-off. We designed an experiment where a target had to be hit and the reward (given in points) increased as a function of both subjects' endpoint accuracy and endpoint velocity. As faster movements lead to poorer endpoint accuracy, the variance of the reward increased for higher velocities. We tested subjects on two reward conditions that had the same mean reward but differed in the variance of the reward. A risk-neutral account predicts that subjects should only maximize the mean reward and hence perform identically in the two conditions. In contrast, we found that some (risk-averse) subjects chose to move with lower velocities and other (risk-seeking) subjects with higher velocities in the condition with higher reward variance (risk). This behavior is suboptimal with regard to maximizing the mean number of points but is in accordance with a risk-sensitive account of movement selection. Our study suggests that individual risk sensitivity is an important factor in motor tasks with speed-accuracy trade-offs.

HVIC switch for high-frequency power converters

A high voltage integrated circuit (HVIC) switch designed as a building block for power converters operating up to 13.56 MHz from off-line voltages is presented. A CMOS-compatible, 500 V power device process is used to integrate control circuitry with a high-speed MOS gate driver and high voltage lateral power MOSFET. Fabrication of the HVIC switches has proceeded in two stages. The first batch of devices showed switching times of less than 5 ns for the power switch and good high frequency performance of a level-shifter for driving half bridge converters. In the second phase, a switch that monolithically integrates all the elements required to form a complete high-frequency converter has been designed.

Plume attenuation under high power Nd:yttritium-aluminum-garnet laser welding

During high-power continuous wave (cw) Nd:yttritium-aluminum-garnet (YAG) laser welding a vapor plume is formed containing vaporized material ejected from the keyhole. The gas used as a plume control mechanism affects the plume shape but not its temperature, which has been found to be less than 3000 K, independent of the atmosphere and plume control gases. In this study high-power (up to 8 kW) cw Nd:YAG laser welding has been performed under He, Ar, and N2 gas atmospheres, extending the power range previously studied. The plume was found to contain very small evaporated particles of diameter less than 50 nm. Rayleigh and Mie scattering theories were used to calculate the attenuation coefficient of the incident laser power by these small particles. In addition the attenuation of a 9 W Nd:YAG probe laser beam, horizontally incident across the plume generated by the high-power Nd:YAG laser, was measured at various positions with respect to the beam-material interaction point. Up to 40% attenuation of the probe laser power was measured at positions corresponding to zones of high concentration of vapor plume, shown by high-speed video measurements. These zones interact with the high-power Nd:YAG laser beam path and, can result in significant laser power attenuation. © 2004 Laser Institute of America.

Study of spike and modal stall phenomena in a low-speed axial compressor

This paper presents a study of stall inception mechanisms a in low-speed axial compressor. Previous work has identified two common flow breakdown sequences, the first associated with a short lengthscale disturbance known as a `spike', and the second with a longer lengthscale disturbance known as a `modal oscillation'. In this paper the physical differences between these two mechanisms are illustrated with detailed measurements. Experimental results are also presented which relate the occurrence of the two stalling mechanisms to the operating conditions of the compressor. It is shown that the stability criteria for the two disturbances are different: long lengthscale disturbances are related to a two-dimensional instability of the whole compression system, while short lengthscale disturbances indicate a three-dimensional breakdown of the flow-field associated with high rotor incidence angles. Based on the experimental measurements, a simple model is proposed which explains the type of stall inception pattern observed in a particular compressor. Measurements from a single stage low-speed compressor and from a multistage high-speed compressor are presented in support of the model.

Energy recovery from high-frequency clocks using DC-DC converters

Large digital chips use a significant amount of energy to distribute a multi-GHz clock. By discharging the clock network to ground every cycle, the energy stored in this large capacitor is wasted. Instead, the energy can be recovered using an on-chip DC-DC converter. This paper investigates the integration of two DC-DC converter topologies, boost and buck-boost, with a high-speed clock driver. The high operating frequency significantly shrinks the required size of the L and C components so they can be placed on-chip; typical converters place them off-chip. The clock driver and DC-DC converter are able to share the entire tapered buffer chain, including the widest drive transistors in the final stage. To achieve voltage regulation, the clock duty cycle must be modulated; implying only single-edge-triggered flops should be used. However, this minor drawback is eclipsed by the benefits: by recovering energy from the clock, the output power can actually exceed the additional power needed to operate the converter circuitry, resulting in an effective efficiency greater than 100%. Furthermore, the converter output can be used to operate additional power-saving features like low-voltage islands or body bias voltages. ©2008 IEEE.

Implementation of trailer steering control on a multi-unit vehicle at high speeds

A high-speed path-following controller for long combination vehicles (LCVs) was designed and implemented on a test vehicle consisting of a rigid truck towing a dolly and a semitrailer. The vehicle was driven through a 3.5 m wide lane change maneuver at 80 km/h. The axles of the dolly and trailer were steered actively by electrically-controlled hydraulic actuators. Substantial performance benefits were recorded compared with the unsteered vehicle. For the best controller weightings, performance improvements relative to unsteered case were: lateral tracking error 75% reduction, rearward amplification (RA) of lateral acceleration 18% reduction, and RA of yaw rate 37% reduction. This represents a substantial improvement in stability margins. The system was found to work well in conjunction with the braking-based stability control system of the towing vehicle with no negative interaction effects being observed. In all cases, the stability control system and the steering system improved the yaw stability of the combination. © 2014 by ASME.

High-performance nanowire oxide photo-thin film transistor.

A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing.. The device characteristics are good, including endurance of up to 10(6) test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays.

Response of clamped sandwich beams subjected to high-velocity impact by sand slugs

The dynamic response of end-clamped sandwich and monolithic beams of equal areal mass subjected to loading via high-velocity slugs of dry and water-saturated sand is measured using a novel laboratory-based method. The sandwich beams comprise aluminium face sheets and an aluminium honeycomb core: the effect of sandwich core strength and beam thickness on the dynamic beam deflection is investigated by varying the orientation and height of the anisotropic aluminium honeycomb core material. High-speed imaging is used to measure the transient transverse deflection of the beams and to record the dynamic modes of deformation. The measurements show that sandwich beams with thick, strong cores are optimal and that these beams significantly outperform monolithic beams of equal mass. The water-saturated sand slugs cause significantly higher deflections compared to the dry sand slugs having the same mean slug velocity and we demonstrate that this enhanced deflection is due to the larger mass of the water-saturated slugs. Finally, we show that the impact of sand slugs is equivalent to the impact of a crushable foam projectile. The experiments using foam projectiles are significantly simpler to perform and thus represent a more convenient laboratory technique. © 2014 Elsevier Ltd. All rights reserved.

High-power electroabsorption modulator for radio over fibre system

An electroabsorption modulator using an intra-step quantum well (IQW) active region is fabricated for a radio over fibre system. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio efficiency (10 dB V-1) and low capacitance (< 0.42 pF), with which high frequency (> 15 GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to an excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for a multi-quantum well EAM without a heat sink.

High-power electroabsorption modulator using intrastep quantum well

An electroabsorption modulator using the intrastep quantum well (IQW) active region is fabricated for optical network systems. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio elliciency 10 dB/V and low capacitance (< 0.42 pF), with which an ultra high frequency (> 15 GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for multi-quantum well EAMs without heat sinks.

High-performance 1.55 mu m low-temperature-grown GaAs resonant-cavity-enhanced photodetector

A 1.55 mu m low-temperature-grown GaAs (LT-GaAs) photodetector with a resonant-cavityenhanced structure was designed and fabricated. A LT-GaAs layer grown at 200 degrees C was used as the absorption layer. Twenty- and fifteen-pair GaAs/AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. A responsivity of 7.1 mA/W with a full width at half maximum of 4 nm was obtained at 1.61 mu m. The dark current densities are 1.28x10(-7) A/cm(2) at the bias of 0 V and 3.5x10(-5) A/cm(2) at the reverse bias of 4.0 V. The transient response measurement showed that the photocarrier lifetime in LT-GaAs is 220 fs. (c) 2006 American Institute of Physics.

High Q microring resonator in silicon-on-insulator rib waveguides - art. no. 68380J

A high quality (Q) factor microring resonator in silicon-on-insulator rib waveguides was fabricated by electron beam lithography, followed by inductively coupled plasma etching. The waveguide dimensions were scaled down to submicron, for a low bending loss and compactness. Experimentally, the resonator has been realized with a quality factor as high as 21,200, as well as a large extinction ratio 12.5dB at telecommunication wavelength near 1550nm. From the measured results, propagation loss in the rib waveguide is determined as low as 6.900/cm. This high Q microring resonator is expected to lead to high speed optical modulators and bio-sensing devices.

The wideband high-linearity mixers for cable television tuner application

The wideband high-linearity mixers for a double conversion cable TV tuner is presented. The up-conversion mixer converts the input signal from 100MHz to 1000 MHz to the intermediate frequency (IF) of I GHz above. And the down-conversion mixer converts the frequency back. The degeneration resistors are used to Improve the linearity. The tuner is implemented in a 0.35 mu m SiGe technology. Input power at 1dB compression point can reach +14.23dBm. The lowest noise figure is 17.5dB. The two mixers consume 103mW under a supply voltage of 5 V.

A high-gain high-linearity wide-band low noise amplifier for terrestrial and cable receptions

This paper presents the design of a wide-band low-noise amplifier (LNA) implemented in a 0.35 mu m SiGe BiCMOS technology for cable (DVB-C) and terrestrial (DVB-T) tuner applications. The LNA utilizes current injection to achieve high linearity. Without using inductors, the LNA achieves 0.1-1GHz wide bandwidth and 18.8-dB gain with less than 1.4-dB gain variation. The noise figure(NF) of the wideband LNA is 5dB, its 1-dB compression point is -2dBm and IIP3 is 8dBm. The LNA dissipates 120mW power with a 5-V supply.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.