用电动势方法测定Pr-Al、Nd-Al体系的热力学性质和Nd-Al合金组成

本文测定了如下电池 Pr(固)|KCl-NaCl+2%PrCl_3|Pr-Al(X_(Pr) = 0.09-0.19) Pr-Al(X_(Pr) = 0.09-0.19)|KCl-NaCl+2% PrCl_3|Pr-Al(待测) Nd(固)|KCl-NaCl+2%NdCl_3|Nd-Al(X_(Nd) = 0.09-0.19) Nd-Al(X_(Nd) = 0.09-0.19)|KCl-NaCl+2%NdCl_3|Nd-Al(待测)的电动势与温度，待测合金组成的关系。温度范围是670－850 ℃，组成范围是Pr或Nd的摩尔分数从0.01到0.190。在此基础上计算了Pr-Al、Nd-Al合金熔体中各金属的活度、偏摩尔自由能、偏摩尔熵以及合金体系的摩尔混自由能、摩尔混合熵和摩尔混合焓，计算了合金相图的部分液相线温度和不同温度下PrAl_4、NdAl_4的标准生成自由能。在空气和氯气混合气氛下对电池Nd-Al(X_(dd) = 0.09-0.19)|KCl-NaCl+NdCl_3|Nd-Al(待测)的电动势与待测合金组成、电解质中NdCl_3含量的关系进行了探讨。为在电解Nd-Al合金过程中快速、近似分析合金组成提供了依据。在此基础上提出了一种快速、近似的分析方法。

叔丁基环戊二烯基稀土氯化物及烷基配合物的合成、结构及性能

本文以叔丁基环戊二烯基为配体，合成并表征了几类新的稀土有机配合物：无水氯化稀土与等当量的叔丁基环戊二烯基钠在THF中反应，首次合成了单环取代二氯化稀土齐聚物。[(t-BuCpLnCl_2·THF)_2·NaCl·THF]_n Ln=Nd, Gd, Yb X射线分析，证明了配合物[(t-BuCpNdCl_2·THF)_2·NaCl·THF]_n是通过一个μ_3-Cl桥而成链的。二（叔丁基环戊二烯基）稀土一氯化物与甲基锂反应，制得了二（叔丁基环戊二烯基）稀土甲基配合物。[(t-BuCp)_2LnCH_3]_2，Ln=Pr，Nd，Gd对二（叔丁基环戊二烯基）钕甲基配合物进行了晶体结构测定，证实了该配合物是一个含对称甲基碳桥的二聚体。二（叔丁基环戊二烯基）稀土一氯化物与叔丁基锂反应，分离到了三个二（叔丁基环戊二烯基）稀土叔丁基配合物。(t-BuCp)_2 Nd(t-Bu)(DME) (t-BuCp)_2 Ln(t-Bu), Ln=Pr, Gd对配合物(t-BuCp)_2 Dd(t-Bu)(DME)进行了X光分析仅得到了它的晶胞参数，晶体结构未能解出。此外，利用二（叔丁基环戊二烯基）钕甲基配合物与二（异丁基）氢铝室温下反应，得到一个双核配合物：(t-BuCp)_2Nd(μ-ch_3)(μ-H)Al(i-Bu)_2对上述几类配合物分别进行了元素分析、红外光谱、水解质谱等表征，本文还研究了配合物[(t-BuCp)_2 LnCH_3]_2引发苯乙烯的聚合活性。证明它们可以单独作为催化剂引发苯乙烯取合。其活性与稀土离子的性质、催化剂用量等有关，不同配合物，其活性顺序为：Nd>Pr>Gd。催化聚合所得到的聚合物主要是无规取苯乙烯。

STUDY ON PREPARATION OF GAN AND COSI2 EPITAXIAL-FILMS BY MASS ANALYZED LOW-ENERGY DUAL ION-BEAM EPITAXY

The Mass Analyzed Low Energy Dual Ion Beam Epitaxy (MALE-DIBE) system has been designed and constructed in our laboratory. We believe that the system, which was installed and came into full operation in 1988, is the first facility of this kind. With our system we have carried out studies, for the first time, on compound synthesis of GaN and CoSi2 epitaxial thin films. RHEED and AES results show that GaN films, which were deposited on Si and sapphire substrates, are monocrystalline and of good stoichiometry. To our knowledge, GaN film heteroepitaxially grown on Si. which is more lattice-mismatched than GaN on sapphire, has not been reported before by other authors. RBS and TEM investigations indicated a rather good crystallinity of CoSi2 with a distinct interface between CoSi2 and the Si substrate. The channelling minimum yield chi(min) from the Co profile is approximately 4%. The results showed that the DIBE system with simultaneous arrival of two beams at the target is particularly useful in the formation of novel compounds at a relatively low substrate temperature.

High quality CeO2 film grown on Si(111) substrate by using low energy dual ion beam deposition technology

By using the mass-analyzed low energy dual ion beam deposition technique, a high quality epitaxial, insulating cerium dioxide thin film with a thickness of about 2000 Angstrom, has been grown on a silicon (111) substrate. The component species, cerium and oxygen, are homogeneous in depth, and have the correct stoichiometry for CeO2. X-ray double-crystal diffraction shows that the full width at half maximum of the (222) and (111) peaks of the film are less than 23 and 32 s, respectively, confirming that the film is a perfect single crystal. (C) 1995 American Institute of Physics.

Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy

The effect of thermal annealing on the Raman spectrum of Si0.33Ge0.67 alloy grown on Si (100) by molecular beam epitaxy is investigated in the temperature range of 550-800 degrees C. For annealing below 700 degrees C, interdiffusion at the interface is negligible and the residual strain plays the dominant role in the Raman shift. The strain-shift coefficients for Si-Ge and Ge-Ge phonon modes are determined to be 915 +/- 215 cm(-1) and 732 +/- 117 cm(-1), respectively. For higher temperature annealing, interdiffusion is significant and strongly affects the Raman shift and the spectral shape.

Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability

The effects of annealing time and Si cap layer thickness: on the thermal stability of the Si/SiGe/Si heterostructures deposited by disilane and solid-Ge molecule beam epitaxy were investigated. It is found that in the same strain state of the SiGe layers the annealing time decreases with increasing Si cap layer thickness. This effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the Si cap layer thickness. (C) 2001 Elsevier Science B.V. All rights reserved.

Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

Strain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

Formation and magnetic properties of Fe16N2 films prepared by ion-beam-assisted deposition

Fe-N films containing the Fe16N2 phase were prepared in a high-vacuum system of ion-beam-assisted deposition (IBAD). The composition and structure of the films were analysed by Auger electron spectroscopy (AES) and X-ray diffraction (XRD), respectively. Magnetic properties of the films were measured by a vibrating sample magnetometer (VSM). The phase composition of Fe-N films depend sensitively on the N/Fe atomic arrival ratio and the deposition temperature. An Fe16N2 film was deposited successfully on a GaAs (1 0 0) substrate by IBAD at a N/Fe atomic arrival ratio of 0.12. The gram-saturation magnetic moment of the Fe16N2 film obtained is 237 emu/g at room temperature, the possible cause has been analysed and discussed. Hysteresis loops of Fe16N2 have been measured, the coercive force H-c is about 120 Oe, which is much larger than the value for Fe, this means the Fe16N2 sample exhibits a large uniaxial magnetocrystalline anisotropy. (C) 1998 Elsevier Science B.V. All rights reserved.

System size dependence of associated yields in hadron-triggered jets STAR Collaboration

We present results on the system size dependence of high transverse momentum di-hadron correlations at root s(NN) = 200 GeV as measured by STAR at RHIC. Measurements in d + Au, Cu + Cu and Au + Au collisions reveal similar jet-like near-side correlation yields (correlations at small angular separation Delta phi similar to 0, Delta eta similar to 0) for all systems and centralities. Previous measurements have shown Chat the away-side (Delta phi similar to pi) yield is suppressed in heavy-ion collisions. We present measurements of the away-side Suppression as a function of transverse momentum and centrality in Cu + Cu and Au + Au collisions. The suppression is found to be similar in Cu + Cu and An + An collisions at a similar number of participants. The results are compared to theoretical calculations based on the patron quenching model and the modified fragmentation model. The observed differences between data and theory indicate that the correlated yields presented here will further constrain dynamic energy loss models and provide information about the dynamic density profile in heavy-ion collisions. (C) 2009 Elsevier B.V. All rights reserved.

Measurement of the Bottom Quark Contribution to Nonphotonic Electron Production in p plus p Collisions at root s=200 GeV

The contribution of B meson decays to nonphotonic electrons, which are mainly produced by the semileptonic decays of heavy-flavor mesons, in p + p collisions at root s = 200 GeV has been measured using azimuthal correlations between nonphotonic electrons and hadrons. The extracted B decay contribution is approximately 50% at a transverse momentum of p(T) >= 5 GeV/c. These measurements constrain the nuclear modification factor for electrons from B and D meson decays. The result indicates that B meson production in heavy ion collisions is also suppressed at high p(T).

Higher Moments of Net Proton Multiplicity Distributions at RHIC

200 GeV corresponding to baryon chemical potentials (mu(B)) between 200 and 20 MeV. Our measurements of the products kappa sigma(2) and S sigma, which can be related to theoretical calculations sensitive to baryon number susceptibilities and long-range correlations, are constant as functions of collision centrality. We compare these products with results from lattice QCD and various models without a critical point and study the root s(NN) dependence of kappa sigma(2). From the measurements at the three beam energies, we find no evidence for a critical point in the QCD phase diagram for mu(B) below 200 MeV.

Three-Particle Coincidence of the Long Range Pseudorapidity Correlation in High Energy Nucleus-Nucleus Collisions

We report the first three-particle coincidence measurement in pseudorapidity (Delta eta) between a high transverse momentum (p(perpendicular to)) trigger particle and two lower p(perpendicular to) associated particles within azimuth |Delta phi| < 0.7 in root s(NN) = 200 GeV d + Au and Au + Au collisions. Charge ordering properties are exploited to separate the jetlike component and the ridge (long range Delta eta correlation). The results indicate that the correlation of ridge particles are uniform not only with respect to the trigger particle but also between themselves event by event in our measured Delta eta. In addition, the production of the ridge appears to be uncorrelated to the presence of the narrow jetlike component.