Eccentricity effects on acoustic radiation from a spherical source suspended within a thermoviscous fluid sphere.

Acoustic radiation from a spherical source undergoing angularly periodic axisymmetric harmonic surface vibrations while eccentrically suspended within a thermoviscous fluid sphere, which is immersed in a viscous thermally conducting unbounded fluid medium, is analyzed in an exact fashion. The formulation uses the appropriate wave-harmonic field expansions along with the translational addition theorem for spherical wave functions and the relevant boundary conditions to develop a closed-form solution in form of infinite series. The analytical results are illustrated with a numerical example in which the vibrating source is eccentrically positioned within a chemical fluid sphere submerged in water. The modal acoustic radiation impedance load on the source and the radiated far-field pressure are evaluated and discussed for representative values of the parameters characterizing the system. The proposed model can lead to a better understanding of dynamic response of an underwater acoustic lens. It is equally applicable in miniature transducer analysis and design with applications in medical ultrasonics.

南方某地妇女儿童血液中多氯联苯蓄积水平调查

目的了解我国南方某多氯联苯(PCBs)高暴露地区的妇女、儿童体内PCBs的蓄积水平。方法采集当地某小学中符合条件的50对母子的血液,用GC-MS法进行PCBs含量的测定。结果儿童血液中所测的13种PCBs的浓度最大值为505 ng/g类脂,几何均数为192 ng/g类脂;母亲血液中所测的13种PCBs的总浓度的最大值为461 ng/g类脂,几何均数为176 ng/g类脂;儿童和母亲血液中PCBs含量的相关系数为0.74。结论该地区妇女和儿童血液中检测出较高水平的PCBs,儿童和母亲血液中PCBs含量呈现较

淡水噬藻体及其他溶藻因子的分布与感染力

研究了不同时空条件下噬藻体的分布与效力的变化.2001年8~11月共采集了18个水样,对14种藻进行直接感染,从其中的5个水样中分离到了噬藻体(蓝藻病毒),它们主要来源于降温以前富营养化池塘的水样,同时分离得到了4株溶藻细菌.在接受直接感染的14种藻中,聚球藻、组囊藻、微囊藻、织线藻、鱼腥藻7120、衣藻及小球藻为敏感种类,而螺旋藻、念珠藻、鞘丝藻、颤藻、鱼腥藻595、鱼腥藻1444、栅藻则为不敏感种类,敏感种类中织线藻受到噬藻体的感染,聚球藻、微囊藻和织线藻受到溶藻细菌的溶解.从富营养化的池塘采集的水样

Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells

A wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-Si:H) window layer was prepared with a conventional RF-PECVD system under large H dilution condition, moderate power density, high pressure and low substrate temperature. The optoelectrical and structural properties of this novel material have been investigated by Raman and UV-VIS transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous SiHx matrix and with a widened bandgap. The observed downshift of the optical phonon Raman spectra (514.4 cm(-1)) from crystalline Si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the Si nanocrystallites. By using this kind of p-layer, a-Si:H solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a V c of 0.90 V, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 Elsevier B.V. All rights reserved.

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/1T0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 mu m)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 Elsevier B.V. All rights reserved.

Occupation modulation of higher subbands in a three-barrier tunnelling structure with a magnetic field

We verify that the magnetic suppression of intersubband LO or LA phonon scattering can give rise to a noticeable nonthermal occupation in higher-lying subbands. This is clearly determined by the relative intensity ratio of the interband photoluminescence spectra for the E-2 - HH1 and E-1 - HH1 transitions. The observed phenomenon may provide an effective method to control the intersubband scattering rate, which is a key factor of the so-called quantum cascade lasers. This is helpful for the population inversion between both the subbands in quantum wells.

Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells

A wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-Si:H) window layer was prepared with a conventional RF-PECVD system under large H dilution condition, moderate power density, high pressure and low substrate temperature. The optoelectrical and structural properties of this novel material have been investigated by Raman and UV-VIS transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous SiHx matrix and with a widened bandgap. The observed downshift of the optical phonon Raman spectra (514.4 cm(-1)) from crystalline Si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the Si nanocrystallites. By using this kind of p-layer, a-Si:H solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a V c of 0.90 V, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 Elsevier B.V. All rights reserved.

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/1T0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 mu m)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 Elsevier B.V. All rights reserved.

参数化系统安全性的启发式符号验证

参数化系统(paramterized system)是指包含特定有限状态进程多个实例的并发系统,其中的参数是指系统内进程实例的数目,即系统的规模.反向可达性分析(backward reachability analysis)已被广泛用于验证参数化系统是否满足以向上封闭(upward-closed)集合表示的安全性(safety property).与有限状态系统验证相类似,参数化系统的验证同样也面临着状态爆炸(state explosion)问题,并且模型检测算法的有效性依赖于如何采用有效的数据结构表示状态集合.针对表示无穷状态的向上封闭集合,研究人员提出了多种基于约束(constraint-based)的符号表示方法.但这些方法依然面临着符号状态爆炸(symbolic state explosion)问题或者其包含判定问题,即判断一个约束条件集合符号化表示的实际状态集合是否为另一约束条件集合所对应的状态集合的子集,是Co-NP完全问题.因此,虽然有限状态验证技术能够验证一些具有一定规模的问题,但现有针对参数化系统的验证方法所能解决的问题的规模较为有限,需要近一步提高模型检测算法的效率.针对参数化系统提出了加快反向可达性分析的多个启发式规则,实验结果表明,这些启发式规则可以使算法的效率提高几个数量级,从而有助于解决现有参数化系统验证方法所存在的问题.

单节拍浮点运算神经元的组合逻辑设计

介绍了通用神经计算机CASSANDRA-Ⅱ中单节拍浮点运算神经元的硬件设计方法.基于通用超曲面神经元模型,以组合电路与EPROM查表分别实现浮点数加法、乘法及p次幂运算,从而实现了单节拍内完成浮点运算|W(X-Y)|p的神经元组合逻辑设计.该设计使通用神经计算机硬件具有更强的适应能力和更好的网络性能.