945 resultados para Current voltage characteristics


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A novel single-phase voltage source rectifier capable to achieve High-Power-Factor (HPF) for variable speed refrigeration system application, is proposed in this paper. The proposed system is composed by a single-phase high-power-factor boost rectifier, with two cells in interleave connection, operating in critical conduction mode, and employing a soft-switching technique, controlled by a Field Programmable Gate Array (FPGA), associated with a conventional three-phase IGBT bridge inverter (VSI - Voltage Source Inverter), controlled by a Digital Signal Processor (DSP). The soft-switching technique for the input stage is based on zero-current-switching (ZCS) cells. The rectifier's features include the reduction in the input current ripple, the reduction in the output voltage ripple, the use of low stress devices, low volume for the EMI input filter, high input power factor (PF), and low total harmonic distortion (THD) in the input current, in compliance with the EEC61000-3-2 standards. The digital controller for the output stage has been developed using a conventional voltage-frequency control (scalar V/f control), and a simplified stator oriented Vector control, in order to verify the feasibility and performance of the proposed digital controls for continuous temperature control applied at a refrigerator prototype.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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This article analyzes the electrical parameters of a 3-phase transmission line using a 280-m-high steel tower that has been proposed for the Amazon transmission system in Brazil. The height of the line conductors and the distance between them are intrinsically related to the longitudinal and transverse parameters of the line. Hence, an accurate study is carried out in order to show the electrical variations between a transmission line using the new technology and a conventional 3-phase 440-kV line, considering a wide range of frequencies and variable soil resistivity. First, a brief review of the fundamental theory of line parameters is presented. In addition, by using a digital line model, simulations are carried out in the time domain to analyze possible and critical over-voltage transients on the proposed line representation.

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This work presents contributions in the detection and identication of faults in multilevel inverters through the study of the converters behavior under these operation conditions. Basically, the approached fault consists of an open-circuit in any switch of a three-level clamped diode inverter. The converter operation is characterized in the pre and post-fault states. A wave form behavior analysis of the pole voltage, phase current and dc-bus current is also done, which highlights characteristics that allow the detection of failure and, even, under favorable conditions, the identication of the faulty device. A compensation strategy of the approached fault (open-switch) is also investigated with the purpose of maintaining the driving system operational when a failure occurs. The proposed topology uses SCRs in parallel with the internal switches of the inverter, which allows, in some occasions, the full utilization of the dc-bus

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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The complete I-V characteristics of SnO(2)-based varistors, particularly of the Pianaro system SCNCr consisting in 98.9%SnO(2)+1%CoO+0.05%Nb(2)O(5)+0.05%Cr(2)O(3), all in mol%, have been seldom reported in the literature. A comparative study at low and high currents of the nonohmic behavior of SCNCr- and ZnO-based varistors (modified Matsuoka system) is proposed in this work. The SCNCr system showed higher nonlinearity coefficients in the whole range of measured current. The electrical breakdown field (E(b)) was twice as high for the SCNCr system (5400 V/cm) than for the ZnO varistor (2600 V/cm) due to a smaller average grain size of the former (4.5 mu m) with respect to the latter (8.5 mu m). Nevertheless, we consider that another important factor responsible for the high E(b) in the SCNCr system is the great number of electrically active interfaces (85%) as determined with electrostatic force microscopy (EFM). It was also established that the SCNCr system might be produced in disks of smaller dimensions than that of commercial ZnO-based product, with a 5.0 cm(-1) minimal area-volume (A/V) ratio. The SCNCr reached the saturation current in a short time because of the high resistivity of the grains, which is five times higher than that of the grains in ZnO-based varistors.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Considerando a importância do amido de mandioca para as indústrias brasileiras, este trabalho teve por objetivo avaliar os efeitos de parâmetros de extrusão sobre as características físicas e propriedades de pasta do amido de mandioca extrusado. Foi utilizado o delineamento fatorial do tipo central composto rotacional com três variáveis independentes (2³) e a metodologia de superfície de resposta para avaliar os resultados de índice de expansão, volume específico, índice de absorção de água, índice de solubilidade em água, cor e propriedades de pasta, de acordo com as variações de umidade, temperatura de extrusão e rotação da rosca. A temperatura de extrusão influenciou o índice de expansão, volume específico, índice de absorção de água, todos os parâmetros de cor e a viscosidade inicial, pico e viscosidade final. Já a umidade teve influência sobre o volume específico, parâmetros de cor, viscosidade final e tendência a retrogradação. A rotação da rosca teve efeito no índice de absorção de água, nos componentes de cor bem como viscosidade final e na tendência à retrogradação do amido extrusado. Nas condições operacionais de elevada umidade inicial da matéria-prima, baixa rotação da rosca e temperatura de extrusão no nível intermediário ocorreu menor degradação do amido, o que é desejável em amidos pré-gelatinizados.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Ferroelectric SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si were successfully synthesized by the modified polymeric precursor method. The films were deposited by spin coating and crystallized by rapid thermal annealing in a halogen lamp furnace, followed by postannealing at temperatures ranging from 700 degreesC to 800 degreesC in an oxygen atmosphere. Microstructural and phase evaluations were followed by x-ray diffraction and atomic force microscopy. The films displayed spherical grain structures with a superficial roughness of approximately 3-6 nm. The dielectric constant values were 121 and 248 for films treated at 700 degreesC and 800 degreesC, respectively. The P-E curve showed a voltage shift toward the positive side, which was attributed to crystallization under the halogen illumination. The remanent polarization (2P(r)) and coercive field (E-c) were 7.1 muC/cm(2) and 113 kV/cm, and 18.8 muC/cm(2) and 93 kV/cm for the films treated at 700 degreesC and 800 degreesC, respectively. (C) 2001 American Institute of Physics.

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This article assesses the use of the constant current (CC) method for characterizing dielectric films. The method is based on charging the sample with a constant current (current stress) and measuring the corresponding voltage rise under the closed circuit condition. Our article shows that the CC method is an alternative to the constant voltage stressing method to study the electric properties of nonpolar, ferroelectric, and polar polymers. The method was tested by determining the dielectric constant of polytetrafluoroethylene, and investigating the electric conduction in poly(ethylene terephthalate). For the ferroelectric polymer poly(vinylidene fluoride), it is shown that hysteresis loops and the dependence of the ferroelectric polarization on the electric field can be obtained. (C) 2001 American Institute of Physics.