1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellosung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth and photoluminescence of InAlGaN films

Two quaternary InAlGaN films were grown by metal-organic chemical-vapor deposition (MOCVD) on sapphire (0001) substrates with and without high-temperature GaN interlayer, respectively. The structural and optical properties of the quaternary films were investigated by high-resolution X-ray diffraction (HRXRD), high-resolution electron microscopy (HREM), temperature-dependent photoluminescence (PL) spectroscopy and time-resolved photoluminescence (TRPL) spectroscopy. According to the HRXRD and PL results, it is demonstrated that two samples have the same crystal quality. The TRPL signals of both samples were fitted well as a stretched exponential decay from 14 K to 250 K, indicating significant disorder in the materials, which is attributed to recombination of excitons localized in disorder quantum nanostructures such as quantum dots or quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-section HREM measurement further proves that there exist disorder quantum nanostructures in the quaternary. By investigating the temperature dependence of the dispersive exponent beta, it is shown that the stretched exponential decays of the two samples originate from different mechanisms. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask

We proposed a new method to suppress the crystallographic tilt in the lateral epitaxial overgrowth of GaN by using an oxide mask with a newly designed pattern. A rhombus mask with edges oriented in the direction of <10 - 10>(GaN) was used instead of the traditional stripe mask. The morphology evolution during the LEO GaN with the rhombus mask was investigated by SEM, and the crystallographic tilt in the LEO GaN was measured by DC-XRD. It is found that using the new rhombus mask can decrease the crystallographic tilt in the LEO GaN. In addition, this method makes the ELO GaN stripes easy to coalesce. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Annealing ambient controlled deep defect formation in InP

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.

Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy

The in-plane optical anisotropy of several GaAs/AlGaAs quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (RDS). The RDS line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1HH-->1E and 1LH-->1E transition. As the well width is decreased, or the 1 ML InAs layer is inserted at one interface, the intensity of the anisotropy increases quickly. Our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. The results demonstrate that the RDS technique is sensitive to the interface structures.

Quantum computing

Quantum computing is a quickly growing research field. This article introduces the basic concepts of quantum computing, recent developments in quantum searching, and decoherence in a possible quantum dot realization.

The photon scanning tunneling microscope and its applications

A simple photon scanning tunneling microscope (PSTM) is described. Its lateral resolution (similar to 10nm with a maximal scanning range of 10 mu m x 10 mu m ) is much better than that of a conventional optical microscope. Its principle, the fiber optic tip fabrication and PSTM images of different samples such as mica, HDPE and LiNbO3 are presented.

Epidemiologia, patogenia, diagnóstico, prevenção e controle da febre aftosa.

Com um rebanho de aproximadamente 200 milhões de cabeças e na primeira posição mundial em exportações de carnes, a pecuária bovina brasileira destaca-se pela importância estratégica na economia nacional. Considerando os valores expressivos oriundos da atividade do agronegócio, torna-se fundamental a adoção de medidas que contribuam para o melhoramento dos aspectos sanitários na cadeia produtiva. Nesse contexto, salientam-se medidas de vigilância e controle da febre aftosa, pois esta é a principal barreira sanitária imposta pelos países importadores, que podem decretar o embargo de produtos de origem animal. O conhecimento sobre o agente etiológico e o comportamento da doença são imprescindíveis para traçar estratégias de controle e tomada de decisões em casos de surtos, visto que a febre aftosa é uma enfermidade infecciosa viral que apresenta alta capacidade de disseminação e grande impacto, em razão das perdas na produção de carne e leite e das conseqüências políticas, sociais e econômicas associadas. Por meio desta série Documentos procura-se reforçar aos produtores, acadêmicos de ciências agrárias e demais envolvidos na cadeia produtiva agropecuária a importância do controle da febre aftosa nos rebanhos. São descritas a etiologia, epidemiologia e patogenia da doença, bem como as formas de diagnóstico e os aspectos de prevenção e controle.

Flotado de efluentes de frigorífico de suínos e aves - 1. Composição química.

2006

Fatores que interferem na ocorrência de celulite aviária.

2010

Tecnologia para aplicação de produtos fitossanitários em videira.

Por definição a tecnologia de Aplicação não se resume ao ato de apenas aplicar o produto, mas na interação de fatores, que buscam a máxima eficiência dos tratamentos, economicidade, eficiência operacional, adequação de máquinas e menor contaminação ambiental e segurança do operador (MATTHEWS,1992). Para tanto, aspectos como o ambiente, qualidade da pulverização promovida pelas pontas de pulverização em função do padrão de gotas produzidas, se interrelacionam e são determinantes para o sucesso das aplicações na cultura da videira, que é cultivada no Brasil em diferentes regiões e conseqüentemente diversificadas em relação ao aspecto climático que confere severidade diferenciada da principal doença infecciosa da cultura, o míldio; sendo necessário de 15 a 50 aplicações por ano para regiões de clima temperado e tropical respectivamente ou também por características varietais que conferem à videira diferentes níveis de suscetibilidade.

COMO montar uma composteira caseira.

Ensina como fazer uma composteira caseira um mecanismo simples e barato para a transformação do lixo (resíduo) orgânico produzido em sua casa em um adubo de excelente qualidade.

Valve surgery in active infective endocarditis: a simple score to predict in-hospital prognosis

Aims Surgery for infective endocarditis (IE) is associated with high mortality. Our objectives were to describe the experience with surgical treatment for IE in Spain, and to identify predictors of in-hospital mortality. Methods Prospective cohort of 1000 consecutive patients with IE. Data were collected in 26 Spanish hospitals. Results Surgery was performed in 437 patients (43.7%). Patients treated with surgery were younger and predominantly male. They presented fewer comorbid conditions and more often had negative blood cultures and heart failure. In-hospital mortality after surgery was lower than in the medical therapy group (24.3 vs 30.7%, p = 0.02). In patients treated with surgery, endocarditis involved a native valve in 267 patients (61.1%), a prosthetic valve in 122 (27.9%), and a pacemaker lead with no clear further valve involvement in 48 (11.0%). The most common aetiologies were Staphylococcus (186, 42.6%), Streptococcus (97, 22.2%), and Enterococcus (49, 11.2%). The main indications for surgery were heart failure and severe valve regurgitation. A risk score for in-hospital mortality was developed using 7 prognostic variables with a similar predictive value (OR between 1.7 and 2.3): PALSUSE: prosthetic valve, age ≥ 70, large intracardiac destruction, Staphylococcus spp, urgent surgery, sex [female], EuroSCORE ≥ 10. In-hospital mortality ranged from 0% in patients with a PALSUSE score of 0 to 45.4% in patients with PALSUSE score > 3. Conclusions The prognosis of IE surgery is highly variable. The PALSUSE score could help to identify patients with higher in-hospital mortality.

Envelhecer com saúde

Projecto de graduação apresentado à Universidade Fernando Pessoa para obtenção do grau de Licenciada em Enfermagem

Representações das crianças sobre a Casa de Abrigo e Sistema de Justiça

Dissertação apresentada à Universidade Fernando Pessoa como parte dos requisitos para obtenção do grau de Mestre em Psicologia Jurídica