Optical transitions in GaNAs/GaAs single quantum well

We have investigated GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL), time-resolved PL (TRPL) and photovoltaic (PV) techniques. The low temperature PL is dominated by spatially direct transitions involving electrons confined in GaNAs well and holes localized in the same GaNAs layer. This assignment was supported by PL decay time measurements and absorption line-shape analysis derived from the PV measurements. By fitting the experimental data with a simple calculation, the band offset of the GaN0.015As0.985/GaAS heterostructure was estimated, and a type II band lineup in GaN0.015As0.985/GaAs QWs was suggested. Moreover, DeltaE(C), the discontinuity of conductor band, is found to be a nonlinear function of the nitrogen (N) composition (x), and the average variation of DeltaE(C) is about 0.110eV per %N, The measured band bowing coefficient shows a strong function of x, giving an experimental support to the theoretic calculation of Wei et al [Ref.2].

1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser

1.3 mu m strained-layer multi-quantum wells complex-coupled distributed feedback lasers with a wide temperature range of 20 to 100 degrees C are reported. The low threshold current of 10mA and high single-facet slope efficiency of 0.3mW/mA were obtained for an as cleaved device. The single mode yield was as high as 80%.

Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

nThermal processing of strained ln(0.2)Ga(0.8)As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77 K photoluminescence efficiency and electron emission from the active layer, due to removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of post-growth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.

The effects of carbonized buffer layer on the growth of SiC on Si

Carbonized buffer layers were formed with C2H4 on Si(100) and Si(111) substrates using different methods and SIC epilayers were grown on each buffer layer at 1050 degrees C with simultaneous supply of C2H4 and Si2H6. The structure of carbonized and epitaxy layers was analyzed with in situ RHEED. The buffer layers formed at 800 degrees C were polycrystalline on both Si(100) and Si(111) substrates whereas they were single crystals, with twins on Si(100) and without tu ins on Si(111)substrates. when formed with a gradual rise in substrate temperature from 300 degrees C to growth temperature. Raising the substrate temperature slowly results in the formation of more twins. Epilayers grown on carbonized polycrystalline lavers are polycrystalline. Single crystal epilayers without twins grow on single crystalline buffer layers without twins or with a few twins. (C) 1999 Elsevier Science B.V. All rights reserved.

Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting

A thermodynamic model of the evolution of microcracks in silicon caused by helium and hydrogen co-implantation during annealing was studied. The crack growth rate relies on the amount of helium atoms and hydrogen molecules present. Here, the crack radius was studied as a function of annealing time and temperature, and compared with experimental results. The mean crack radius was found to be proportional to the annealing temperature and the helium and hydrogen implanted fluence. The gas desorption should be considered during annealing process. (C) 2009 Elsevier B.V. All rights reserved.

Combined single-pass conversion of methane via oxidative coupling and dehydroaromatization

A new reaction mode, i.e., the combined single-pass conversion of methane via oxidative coupling (OCM) over mixed metal oxide (SLC) catalysts and dehydroaromatization (MDA) over Mo/HZSM-5 catalysts, is reported. With the assistance of an OCM reaction over SLC catalysts in the top layer of the reactor, the deactivation resistance of Mo/HZSM-5 catalysts is remarkably enhanced. Under the selected reaction conditions, the CH(4) conversion decreased from similar to18 to similar to1% and the aromatics yield decreased from 12.8 to 0.1%, respectively, after running the reaction for 960 min on both 6Mo/HZSM-5 and SLC-6Mo/HZSM-5 catalyst system without O(2) in the feed. On the other hand, for the SLC-6Mo/HZSM-5 catalyst system with O(2) in the feed, the deactivation was improved greatly, and after 960 min onstream the CH(4) conversion and aromatics yield were still as high as 12.0 and 8.0%, respectively. The promotion effect mainly appears to be associated with in situ formation of CO(2) in the OCM layer, which reacts with coke via the reverse Boudouard reaction.

Preparation and application of single polyelectrolyte microcapsules possessing tunable autofluorescent properties

Autofluorescent single polyelectrolyte microcapsules, exemplified by poly-L-lysine (PLL), have been prepared through glutaraldehyde-mediated covalent layer-by-layer (LbL) assembly and subsequent core removal. CaCO3 microparticles were used as template cores for the LbL deposition and removed by treatment of ethylenediamine tetraacetic acid disodium salt (EDTA). The prepared microcapsules, without conjugating an exterior fluorochrome, exhibited evenly distributed fluorescence.

Weak epitaxy growth of metal-free phthalocyanine on p-sexiphenyl monolayer and double-layer films

Weak epitaxy growth (WEG) can afford high-mobility thin films of disk-like organic semiconductor of which mobility is up to the level of the corresponding single crystals. We investigated the WEG behavior and mechanism of planar phthalocyanine in the model system of metal-free phthalocyanine (H2Pc) grown on p-sexiphenyl (p-6P) ultrathin films (monolayers and double layers). Highly oriented H2Pc films with molecules standing up exhibited two kinds of different in-plane orientations, i.e., three sets of in-plane orientations and only one set of in-plane orientation, on p-6P monolayer and double-layer films, respectively.

A high-performance tandem white organic light-emitting diode combining highly effective white-units and their interconnection layer

By utilizing 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline:Li/MoO3 as an effective charge generation layer (CGL), we extend our recently demonstrated single-emitting-layer white organic light-emitting diode (WOLED) to realize an extremely high-efficiency tandem WOLED. This stacked device achieves maximum forward viewing current efficiency of 110.9 cd/A and external quantum efficiency of 43.3% at 1 mu A/cm(2) and emits stable white light with Commission Internationale de L'Eclairage coordinates of (0.34, 0.41) at 16 V. It is noted that the combination of effective single units and CGL is key prerequisite for realizing high-performance tandem WOLEDs.

Single-crystalline nanowires of SiC synthesized by carbothermal reduction of electrospun PVP/TEOS composite fibres

Nanowires of SiC were synthesized by carbothermally reducing PVP/TEOS composite fibres obtained by electrospinning. High-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED) indicated that the SiC nanowires are single crystalline in nature. Both Fourier-transformed infrared spectroscopy and HRTEM indicated that a thin layer of SiO2 was formed on the outer surface of the nanowire as a result of post-heat treatment for the removal of residual carbon. Such SiO2 layer protects the inner SiC fibre from further oxidation. The formation mechanism of single-crystalline SiC nanowires was proposed based on our understanding and characterizations. The growth of the nanowire is believed to be along the ( 111) of its cubic cell.

Surface modification of single-walled carbon nanotubes with polyethylene via in situ Ziegler-Natta polymerization

Single-walled carbon nanotubes (SWNTs) were modified with polyethylene (PE) prepared by in situ Ziegler-Natta polymerization. Because of the catalyst pre-treated on the surface of the SWNTs, the ethylene was expected to polymerize there. Scanning electron microscopy images and solubility measurements showed that the surface of the SWNTs was covered with a PE layer, and a crosslink may have formed between the SWNTs and PE. When the SWNTs covered with a PE layer were mixed with commercialized PE by melt blending, the resulting composite had better mechanical properties than the composite from the SWNTs without a PE layer. The yield strength, the tensile strength and modulus, the strain at break, and the fracture energy of the modified-SWNT/PE composites were improved by 25, 15.2, 25.4, 21, and 38% in comparison with those of the raw-SWNT/PE composites.

Highly efficient pure-white-light-emitting diodes from a single polymer: Polyfluorene with naphthalimide moieties

Light-emitting diodes exhibiting efficient pure-white-light electroluminescence have been successfully developed by using a single polymer: polyfluorene derivatives with 1,8-naphthalimide chromophores chemically doped onto the polyfluorene backbones. By adjusting the emission wavelength of the 1,8-naphthalimide components and optimizing the relative content of 1,8-naphthalimide derivatives in the resulting polymers, white-light electroluminescence from a single polymer, as opposed to a polymer blend, has been obtained in a device with a configuration of indium tin oxide/poly(3,4-ethyleiledioxythiophene)(50 nm)/polymer(80 nm)/Ca(10 nm)/Al(100 nm). The device exhibits Commission Internationale de I'Eclairage coordinates of (0.32,0.36), a maximum brightness of 11900 cd m(-2), a current efficiency of 3.8 cd A(-1), a power efficiency of 2.0 lm W-1. an external quantum efficiency of 1.50 %, and quite stable color coordinates at different driving voltages, even at high luminances of over 5000 cd m(-2).

White electroluminescence from a poly(N-vinylcarbazole) layer doped with CdSe/CdS core-shell quantum dots

Hybrid organic/inorganic white light-emitting diodes (LEDs) were fabricated of semiconductor polymer poly(N-vinylcarbazole) (PVK) doped with CdSe/CdS core-shell semiconductor quantum dots (QDs). The device, with a structure of indium-tin-oxide (ITO)vertical bar 3,4-polyethylene-dioxythiophene- polystyrene sulfonate (PEDOT:PSS)vertical bar PVK:CdSe/CdS vertical bar Al, emitted a pure white light spanning the whole visible region from 400 to 800 nm. The Commission Internationale del'Eclairage coordinates (CIE) remained at x = 0.33, y = 0.34 at wide applied voltages. The maximum brightness and electroluminescence (EL) efficiency reached 180 cd m(-2) at 19 V and 0.21 cd A(-1) at current density of 2 mA cm(-2), respectively. The realization of the pure white light emission is attributed to the incomplete energy and charge transfer from PVK to CdSe/CdS core-shell QDs.

New double-ceramic-layer thermal barrier coatings based on zirconia-rare earth composite oxides

A series of La2O3-ZrO2-CeO2 composite oxides were synthesized by solid-state reaction. The final product keeps fluorite structure when the molar ratio Ce/Zr >= 0.7/0.3, and below this ratio only mixtures of La2Zr2O7 (pyrochlore) and La2O3-CeO2 (fluorite) exist. Averagely speaking, the increase of CeO2 content gives rise to the increase of thermal expansion coefficient and the reduction of thermal conductivity, but La-2(Zr0.7Ce0.3)(2)O-7 has the lowest sintering ability and the lowest thermal conductivity which could be explained by the theory of phonon scattering. Based on the large thermal expansion coefficient of La2Ce3.25O9.5, the low thermal conductivities and low sintering abilities of La2Zr2O7 and La-2(Zr0.7Ce0.3)(2)O-7, double-ceramic-layer thermal barrier coatings were prepared. The thermal cycling tests indicate that such a design can largely improve the thermal cycling lives of the coatings. Since no single material that has been studied so far satisfies all the requirements for high temperature thermal barrier coatings, double-ceramic-layer coating may be an important development direction of thermal barrier coatings.

Improved performance by a double-insulator layer in organic thin-flim transistors

Organic thin film transistors based on pentacene are fabricated by the method of full evaporation. The thickness of insulator film can be controlled accurately, which influences the device operation voltage markedly. Compared to the devices with a single-insulator layer, the electric performance of devices by using a double-insulator as the gate dielectric has good improvement. It is found that the gate leakage current can be reduced over one order of magnitude, and the on-state current can be enhanced over one order of magnitude. The devices with double-insulator layer exhibit field-effect mobility as large as 0.14 cm(2)/Vs and near the zero threshold voltage. The results demonstrate that using proper double insulator as the gate dielectrics is an effective method to fabricate OTFTs with high electrical performance.