Relações solo-paisagem em topossequência de origem basáltica

Variações nos atributos do solo dependem da posição do solo na paisagem e processos de drenagem, erosão e deposição. Este estudo objetivou avaliar os atributos físicos e químicos do solo, em uma topossequência de origem basáltica, na região de Batatais (SP). A área possui relevo aplanado e altitude oscilando entre 740 m e 610 m, em região dominada por basaltos. Foi estabelecido caminhamento de 3.000 m, a partir do espigão da vertente, no seu declive mais suave. As superfícies geomórficas foram identificadas e delimitadas conforme critérios topográficos e estratigráficos, com base em intensas investigações detalhadas de campo. Foram coletadas amostras laterais aos perfis modais representativos das diversas superfícies geomórficas (S.G.) da topossequência (S.G. I = topo; S.G. II = meia encosta e sopé de transporte; S.G. III = ombro e sopé de deposição), totalizando 142 amostras. Além disto, foram abertas trincheiras, nos segmentos de vertente inseridos nas superfícies geomórficas mapeadas. As amostras coletadas foram analisadas quanto à densidade do solo, textura, bases trocáveis (Ca2+, K+ e Mg2+), soma de bases, capacidade de troca catiônica, saturação por bases, pH (água e KCl), SiO2, Al2O3, Fe2O3 (ataque por H2SO4), óxidos de Fe livres extraídos com ditionito-citrato-bicarbonato e Fe mal cristalizado extraído com oxalato de amônio. Os resultados revelaram que os solos oriundos de basalto apresentaram atributos físicos e químicos com comportamento dependente das formas do relevo. Com o uso de técnicas estatísticas multivariadas, foi possível distinguir três diferentes ambientes, que equivalem às três superfícies geomórficas.

Modelos de paisagem e susceptibilidade magnética na identificação e caracterização do solo

O conhecimento detalhado do solo e de seus atributos, ao longo da paisagem, é uma demanda permanente dos sistemas urbanos e agroindustriais, para o planejamento sustentável de uso e ocupação. O presente trabalho objetivou estudar o potencial de modelos de paisagem e susceptibilidade magnética na identificação e caracterização de latossolos, em Guariba (SP). Foram coletadas 514 amostras de solo, em 110,0 ha, às profundidades de 0,0-0,20 m e 0,60-0,80 m. Foram identificados diferentes compartimentos de paisagem, com base no modelo de superfície geomórfica e segmento de vertente. em cada compartimento de paisagem, foram abertas trincheiras, para classificação do solo. As amostras foram analisadas quanto à granulometria e atributos químicos, pH (água, CaCl2 e KCl), matéria orgânica, P extraível, K+, Ca2+, Mg2+ e H+ + Al3+. Também foram determinados os teores de SiO2, Al2O3, Fe2O3 e óxidos de Fe livres (Fe d) e pouco cristalizados (Fe o), nas amostras das trincheiras, além da susceptibilidade magnética (SM). Solos taxonomicamente iguais, porém em diferentes compartimentos da paisagem, apresentaram valores distintos, para os atributos estudados, indicando que os modelos de paisagem e a susceptibilidade magnética podem ser viáveis, como técnica de campo, para auxiliar no detalhamento da variação dos atributos do solo. A susceptibilidade magnética demonstrou ter potencial para delimitação das superfícies geomórficas mapeadas no campo, o que indica o seu potencial de uso, na identificação e caracterização de áreas mais homogêneas.

Desenvolvimento de sensores para gás à base de SnO2 nanoestruturado: influência da microestrutura no desempenho do sensor

Pós nanométricos SnO2.Nb2O5 foram estudados para o desenvolvimento de sensores de etanol. Estes pós foram preparados pelo método Pechini, caracterizados quanto à sua morfologia por difração de raios X, determinação de área superficial específica por BET e Microscopia Eletrônica de Transmissão e foram submetidos a testes de sensibilidade ao vapor de etanol. Foi estabelecida uma correlação entre a microestrutura do material, os efeitos do dopante e a resposta do sensor.

Filmes finos de SrBi2Ta2O9 processados em forno microondas

Filmes finos de SrBi2Ta2O9 foram depositados em substratos de Pt/Ti/SiO2/Si e, pela primeira vez, sinterizados em forno microondas doméstico. Os padrões de difração de raios X mostraram que os filmes são policristalinos. O processamento por microondas permite utilizar baixa temperatura na síntese e obter filmes com boas propriedades elétricas. Ensaios de microscopia eletrônica de varredura (MEV) e de Força Atômica (MFA) revelam boa aderência entre filme e substrato, com microestrutura de superfície apresentando grãos finos e esféricos e rugosidade de 4,7 nm. A constante dielétrica e o fator de dissipação, para freqüência de 100 KHz, à temperatura ambiente, foram de 77 e 0,04, respectivamente. A polarização remanescente (2Pr) e o campo coercitivo (Ec) foram 1,04 miC/cm² e 33 kV/cm. O comportamento da densidade de corrente de fuga revela três mecanismos de condução: linear, ôhmico e outro mecanismo que pode ser atribuído à corrente de Schottky. Dos padrões de DRX, análises das imagens por MEV e topografia de superfície por MFA observa-se que 10 min de tratamento térmico a 550 ºC, em forno microondas, é tempo suficiente para se obter a cristalização do filme.

Caracterização elétrica de blocos varistores à base de SnO2

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Ferroelectric and microstructural characteristics of SrBi2Ta2O9 thin films crystallized by the rapid thermal annealing process

Ferroelectric SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si were successfully synthesized by the modified polymeric precursor method. The films were deposited by spin coating and crystallized by rapid thermal annealing in a halogen lamp furnace, followed by postannealing at temperatures ranging from 700 degreesC to 800 degreesC in an oxygen atmosphere. Microstructural and phase evaluations were followed by x-ray diffraction and atomic force microscopy. The films displayed spherical grain structures with a superficial roughness of approximately 3-6 nm. The dielectric constant values were 121 and 248 for films treated at 700 degreesC and 800 degreesC, respectively. The P-E curve showed a voltage shift toward the positive side, which was attributed to crystallization under the halogen illumination. The remanent polarization (2P(r)) and coercive field (E-c) were 7.1 muC/cm(2) and 113 kV/cm, and 18.8 muC/cm(2) and 93 kV/cm for the films treated at 700 degreesC and 800 degreesC, respectively. (C) 2001 American Institute of Physics.

Low-voltage varistor based on (Sn,Ti)O-2 ceramics

A description is given of the nonohmic behavior obtained in (SnxTi1-x)O-2-based systems. A matrix founded on (SnxTi1-x)O-2-based systems doped with Nb2O5 leads to a low-voltage varistor system with nonlinear coefficient values of similar to9. The presence of the back-to-back Schottky-type barrier is observed based on the voltage dependence of the capacitance. When doped with CoO, the (SnxTi1-x)O(2)(.)based system presents higher nonlinear coefficient values (>30) than does the SnO2-based varistor system.

Characterization of amorphous niobium silicates powders synthesized by polymeric precursor method

In this paper 4.5SiO(2)-3Al(2)O(3-x)Nb(2)O(5)-2CaO powders have been synthesized using a chemical process the Polymeric Precursor Method. The process of glass formation has been investigated by XRD and DTA, the results confirm that the prepared powders are glasses. Experimental data show that amount of Nb2O5 had a considerable effect on the T-g values. The structures of glasses prepared. have been determined by Si-29 and Al-27 MAS NMR and the results indicated that the network is formed by SiO4 and AlO4 tetrahedral linked and probably Si-O-Nb bonds are present in the vitreous network. (C) 2005 Elsevier B.V. All rights reserved.

Control of retention and fatigue-free characteristics in CaBi4Ti4O15 thin films prepared by chemical method

Ferroelectric CaBi4Ti4O15 (CBTi144) thin films were deposited on Pt/Ti/SiO2/Si substrates by the polymeric precursor method. The films present a single phase of layered-structured perovskite with polar axis orientation after annealing at 700 degrees C for 2 h in static air and oxygen atmosphere. The a/b-axis orientation of the ferroelectric film is considered to be associated with the preferred orientation of the Pt bottom electrode. It is noted that the films annealed in static air showed good polarization fatigue characteristics at least up to 10(10) bipolar pulse cycles and excellent retention properties up to 10(4) s. on the other hand, oxygen atmosphere seems to be crucial in the decrease of both, fatigue and retention characteristics of the capacitors. Independently of the applied electric field, the retained switchable polarization approached a nearly steady-state value after a retention time of 10 s. (C) 2006 Elsevier B.V. All rights reserved.

Soft chemical deposition of BiFeO3 multiferroic thin films

BiFeO3 thin films free of secondary phases were obtained by the soft chemical solution on Pt(111)/Ti/SiO2/Si substrates after annealing at 500 degrees C for 2 h. The film grown in the (100) direction presented a remanent polarization P-r of 31 mu C/cm(2) at room temperature. Electrical measurements using both quasistatic hysteresis and pulsed polarization confirm the existence of ferroelectricity with a switched polarization of 60-70 mu C/cm(2), Delta P=(P-*-P). Low leakage conduction and an out-of-plane piezoelectric (d(3)) coefficient of 40 pm/V were obtained by the improvement of preparation technology.

Effect of La2O3 doping on the microstructure and electrical properties of a SnO2-based varistor

The effect of La2O3 addition on the densification and electrical properties of the (0.9895 - x) SnO2 + 0.01 CoO + 0.0005 Nb2O5 + x La2O5 system, where x = 0.0005 or 0.00075, was considered in this study. The samples were sintered at 1300 degreesC for 2 and 4 h and a single SnO2 phase was identified by X-ray diffraction. Microstructure analysis by scanning electron microscopy showed that the affect of La2O3 addition is to decrease the SnO2 grain size. J versus E curves indicated that the system exhibits a varistor behavior and the effect of La2O3 is to increase both the non-linear coefficient (alpha) and the breakdown voltage (E-2). Considering the Schottky thermionic emission model the potential height and the width were estimated. The addition of small amounts of La2O3 to the basic system increases the potential barrier height and decreases both grain size and potential barrier width. (C) 2001 Kluwer Academic Publishers.

Microstructural, dielectric and ferroelectric properties of calcium-modified lead titanate thin films derived by chemical processes

Ferroelectric Pb1-xCaxTiO3 (x = 0.24) thin films were formed on a Pt/Ti/SiO2/Si substrate by the polymeric precursor method using the dip-coating technique for their deposition. Characterization of the films bq X-ray diffraction showed a perovskite single phase with a tetragonal structure after annealing at 700 degreesC. Atomic force microscopy (AFM) analyses showed that the film had a smooth and crack-free surface with low surface roughness. In addition, the PCT thin film had a granular structure with an 80 nm grain size. The thickness of the films observed by the scanning electron microscopy (SEM) is 550 nm and there is a good adhesion between the film and substrate. For the electrical measurements metal-ferroelectric-metal of the type capacitors were obtained, where the thin films showed good dielectric and ferroelectric properties. The dielectric constant and dissipation factor at 1 kHz and measured at room temperature were found to be 457 and 0.03. respectively. The remanent polarization and coercive field for the: deposited films were P-r = 17 muC/cm(2) and E-c = 75 kV/cm, respectively. Moreover. The 550-nm-thick film showed a current density in the order of 10(-8) A/cm(2) at the applied voltage of 2 V. The high values of the thin film's dielectric properties are attributed to its excellent microstructural quality and the chemical homogeneity obtained by the polymeric precursor method. (C) 2001 Elsevier science Ltd. All rights reserved.

Improvement of the dielectric and ferroelectric properties in superlattice structure of Pb(Zr,Ti)O-3 thin films grown by a chemical solution route

Making heterolayered perovskite materials constitutes an approach for the creation of better dielectric and ferroelectric properties. In the experiment reported here, heterolayered PZT40/PZT60 films were grown on Pt/Ti/SiO2/Si (100) by a chemical solution deposition. The dielectric constant of the heterolayered thin film was significantly enhanced compared with that of pure PZT40 and PZT60 thin films. A dielectric constant of 701 at 100 kHz was observed for a stacking periodicity of six layers having a total thickness of 150 nm. The heterolayered film exhibited greater remanent polarization than PZT60 and PZT40 films. The values of remanent polarization were 7.9, 18.5, and 31 muC/cm(2), respectively, for pure PZT60, PZT40, and heterolayered thin films, suggesting that the superior dielectric and ferroelectric properties of the heterolayered thin film resulted from a cooperative interaction between the ferroelectric phases made from alternating tetragonal and rhombohedral phases of PZT, simulating the morphotropic phase boundary of this system. (C) 2004 American Institute of Physics.

Nonlinear properties and stability of SnO2 varistors prepared by evaporation and decomposition of suspensions

SnO2 varistors doped with CoO, Cr2O3 and Nb2O5 were prepared by evaporation and decomposition of suspensions. The composition of the varistors was optimized to improve electrical properties, such as nonlinearity, leakage current and electrical stability. The best results were achieved with the following composition: 99.15% SnO2 +0.75% CoO+0.05% Cr2O3 +0.05% Nb2O5. Samples showed high density, reaching 99.5% of the theoretical density, as well as an homogeneous microstructure. The nonlinear coefficient was higher than 30 in the current range from 10(-7) to 10(-2) A/cm(2). The leakage current was 0.86 mu A/cm(2). These samples showed high stability of electrical parameters when they were exposed to high current of 27 mA/cm(2) for different time periods up to 30 min. (c) 2005 Elsevier Ltd. All rights reserved.

The influence of yttrium on a typical SnO2 varistor system: Microstructural and electrical features

The influence of yttrium oxide, Y2O3, on the microstructure development of the SnO(2)center dot Co(3)O(4)center dot Nb2O5 typical varistor system was studied with scanning (SEM) and transmission (TEM) electron microscopies. The different phases present in the studied samples were characterized through XRD, EDS and selected area diffraction patterns (SAD). Particles of Co2SnO4 were observed with TEM in every sample, whereas clusters of the pyrochlore phase T2Sn2O7 were observed with SEM in samples with 0.05, 0.10 and 0.25 mol% of Y2O3. The higher non-linearity (a = 16) was achieved with the addition of 0.05 mol% of Y2O3. The influence of the secondary phases on the electrical properties is also addressed in this work. (c) 2005 Published by Elsevier B.V.