Effect of La2O3 doping on the microstructure and electrical properties of a SnO2-based varistor


Autoria(s): Antunes, A. C.; Antunes, SRM; Pianaro, S. A.; Longo, Elson; Leite, E. R.; Varela, José Arana
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

20/05/2014

20/05/2014

01/01/2001

Resumo

The effect of La2O3 addition on the densification and electrical properties of the (0.9895 - x) SnO2 + 0.01 CoO + 0.0005 Nb2O5 + x La2O5 system, where x = 0.0005 or 0.00075, was considered in this study. The samples were sintered at 1300 degreesC for 2 and 4 h and a single SnO2 phase was identified by X-ray diffraction. Microstructure analysis by scanning electron microscopy showed that the affect of La2O3 addition is to decrease the SnO2 grain size. J versus E curves indicated that the system exhibits a varistor behavior and the effect of La2O3 is to increase both the non-linear coefficient (alpha) and the breakdown voltage (E-2). Considering the Schottky thermionic emission model the potential height and the width were estimated. The addition of small amounts of La2O3 to the basic system increases the potential barrier height and decreases both grain size and potential barrier width. (C) 2001 Kluwer Academic Publishers.

Formato

69-74

Identificador

http://dx.doi.org/10.1023/A:1011228914690

Journal of Materials Science-materials In Electronics. Dordrecht: Springer, v. 12, n. 1, p. 69-74, 2001.

0957-4522

http://hdl.handle.net/11449/32493

10.1023/A:1011228914690

WOS:000168281700012

Idioma(s)

eng

Publicador

Springer

Relação

Journal of Materials Science: Materials in Electronics

Direitos

closedAccess

Tipo

info:eu-repo/semantics/article