Comparison the nutritional value of cultured Penaeus vanname with marine shrimps Penaeus merguiensis and Penaeus semisulcatus

The purpose for which this study was intended wasto compare nutritive value among the farmed Vannamei, sea Green Tiger and Banana shrimps native to the PersianGulf. To provide the samples of farmed shrimps at the end of the farming season (Oct. 23rd through Nov. 22nd of 2011), we chosen one farm of the Holleh Shrimp Farming, from which 100 shrimps were randomly selected. From among these 100 shrimps, 3 to 5 ones were taken to conduct an analysis upon. Further, to obtain the Banana and Green Tiger shrimps sampling was done at the fishing season (July 23rd through Aug. 22rd of 2011) at Halileh Fishing Wharf located in Bushehr Fishing Harbor and also Bandar Abbas Wharf. The samples obtained were immediately kept in the ice powder. After some biometric tasks done upon them, they were at the shortest possible time transferred to a laboratory where they went through various experiments to determine their content of raw protein, fat, ash, moisture, various fatty acids and their types, cholesterol, vitamins A and E, and such mineral elements as iron and calcium. All the experimentswere carried out three times to establish confidence in the results to be obtained. Findings of the comparison showed the content of raw protein, fat, moisture, and ash of, respectively, 23.233%, 600%, 73.077% and 2.500% for the Vannamei samples, of 22.717%, 427%, 74.133% and 1.826% for our Banana shrimps and of 17.377%, 430%, 79.866% and 1.313% for the Green Tiger samples. A total of 24 fatty acids for the Vannamei shrimps and 27 for the Banana and Green Tiger were detected. SFA of the Banana shrimps was 368.45 mg/100g (51.76%), while those of the Vannamei and Green Tiger samples were observed, respectively, 363.54 mg/100g (37.26%) and 296.06 mg/100g (49.12%).A similar measurement for MUFA content of the three types of our samples revealed 243.85mg/100g (24.9%) for the Vannamei, 203.177 mg/100g (33.76%) for the Green Tiger and 179.033 mg/100g (25.14%) for the Banana shrimps. The content of PUFA unsaturated fatty acids in the Vannamei, 131 Green Tiger and Banana samples were, respectively, 370.660 mg/100g (37.84%), 101.573 mg/100g (16.9%) and 163.733 mg/100g (23.1%). Further, the comparison found a omega-3-fatty-acids total of 151.747 mg/100g(15.51%) for the Vannamei, 57.123 mg/100g (9.54%) for the Green Tiger and 130.460 mg/100g (18.46%) for the Banana species under study.

The effect of artisanal preservation methods on nutritional security of “Mukene” Rastrineobola argentea caught from Lakes Victoria and Kyoga in Uganda

The artisanal fish preservation methods in Uganda are characterized by extreme operating conditions. Consequently, vital nutritional components diminish in value and quantity which renders fish consumer nutritionally insecure. To establish the magnitude of nutritional loss, duplicate samples of Mukene Rastrineobola argentea were collected from Kiyindi landing site on L. Victoria and Moone landing site on L. Kyoga. Each set of duplicate samples was divided into five portions and kept on ice. For each preservation method a portion was processed into respective products at Food Bioscience and Agri-Business Laboratories aside from the control (fresh) sample. Both preserved and control samples were analysed for nutrient loss at Department of Chemistry, Makerere University using AOAC methods. The composition of fatty acids was determined by methanolysis gas chromatography and Mass spectrophotometry of the resultant methyl esters. The results indicate that nutrients of all preserved samples did not vary significantly from the control except for some fatty acids. The Eicosapentaenoic acid (EPA) in fresh samples declined from 6.72% to 1.08% in deep-fried samples constituting 83.93% nutrient loss. The sum ratio w3:w6 as well as EPA: DHA (Docosahexaenoic) ratio in fried samples also varied significantly (p<0.5) lower than 0.668 and 0.20 for the average of either preservation methods and experts recommended ratio respectively. Further research has been recommended to ascertain the causative factor, since Mukene frying is being promoted in the Great lakes region as alternative method to sun-drying. In conclusion, regular consumers of fried Mukene do not benefit much from the nutritional and health attributes of Omega 3 and 6.

Response of growth and fatty acid compositions of Nannochloropsis sp to environmental factors under elevated CO2 concentration

Nannochloropsis sp. was grown with different levels of nitrate, phosphate, salinity and temperature with CO2 at 2,800 mu l l(-1). Increased levels of NaNO3 and KH2PO4 raised protein and polyunsaturated fatty acids (PUFAs) contents but decreased carbohydrate, total lipid and total fatty acids (TFA) contents. Nannochloropsis sp. grew well at salinities from 22 to 49 g l(-1), and lowering salinity enhanced TFA and PUFAs contents. TFA contents increased with the increasing temperature but PUFAs contents decreased. The highest eicosapentaenoic acid (EPA, 20:5 omega 3) content based on the dry mass was above 3% under low N (150 mu M NaNO3) or high N (3000 mu M NaNO3) condition. Excessive nitrate, low salinity and temperature are thus favorable factors for improving EPA yields in Nannochloropsis sp.

Proposal for the direct optical detection of pure spin currents in semiconductors

We suggest a different practical scheme for the direct detection of pure spin current by using the two-color Faraday rotation of optical quantum interference process (QUIP) in a semiconductor system. We demonstrate theoretically that the Faraday rotation of QUIP depends sensitively on the spin orientation and wave vector of the carriers, and can be tuned by the relative phase and the polarization direction of the omega and 2 omega laser beams. By adjusting these parameters, the magnitude and direction of the spin current can be detected.

Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

The resistivity of hydrothermally grown ZnO single crystals increased from similar to 10(3) Omega cm to similar to 10(6) Omega cm after 1.8 MeV electron irradiation with a fluence of similar to 10(16) cm(-2), and to similar to 10(9) Omega cm as the fluence increased to similar to 10(18) cm(-2). Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 10(18) cm(-2), the normalized TSC signal increased by a factor of similar to 100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 degrees C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed.

High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.

Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate

A 5.35-mu m-thick ZnO film is grown by chemical vapour deposition technique on a sapphire (0001) substrate with a GaN buffer layer. The surface of the ZnO film is smooth and shows many hexagonal features. The full width at half maximum of ZnO (0002) omega-rocking curve is 161 arcsec, corresponding to a high crystal quality of the ZnO film. From the result of x-ray diffraction theta - 2. scanning, the stress status in ZnO film is tensile, which is supported by Raman scattering measurement. The reason of the tensile stress in the ZnO film is analysed in detail. The lattice mismatch and thermal mismatch are excluded and the reason is attributed to the coalescence of grains or islands during the growth of the ZnO film.

Multi-channel micro neural probe fabricated with SOI

Silicon-on-insulator (SOI) substrate is widely used in micro-electro-mechanical systems (MEMS). With the buried oxide layer of SOI acting as an etching stop, silicon based micro neural probe can be fabricated with improved uniformity and manufacturability. A seven-record-site neural probe was formed by inductive-coupled plasma (ICP) dry etching of an SOI substrate. The thickness of the probe is 15 mu m. The shaft of the probe has dimensions of 3 mmx100 mu mx15 mu m with typical area of the record site of 78.5 mu m(2). The impedance of the record site was measured in-vitro. The typical impedance characteristics of the record sites are around 2 M Omega at 1 kHz. The performance of the neural probe in-vivo was tested on anesthetic rat. The recorded neural spike was typically around 140 mu V. Spike from individual site could exceed 700 mu V. The average signal noise ratio was 7 or more.

An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

Optimized AlGaN/AlN/GaN high electron mobility transistor (HEMT) with high mobility GaN channel layer structures were grown on 2-in. diameter semi-insulating 6H-SiC substrates by MOCVD. The 2-in. diameter GaN HEMT wafer exhibited a low average sheet resistance of 261.9 Omega/square, with the resistance un-uniformity as low as 2.23%. Atomic force microscopy measurements revealed a smooth AlGaN surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. For the single-cell HEMTs device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 A/mm, an extrinsic transconductance of 450 mS/mm, a current gain cutoff frequency of 24 GHz and a maximum frequency of oscillation 54 GHz were achieved. The four-cell internally-matched GaN HEMTs device with 10-mm total gate width demonstrated a very high output power of 45.2 W at 8 GHz under the condition of continuous-wave (CW), with a power added efficiency of 32.0% and power gain of 6.2 dB. To our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for X-band GaN-based HEMTs. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer

AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices (SLs) as barrier layer is grown on C-plane sapphire by metal organic vapor deposition (MOCVD). Compared with the conventional Si-doped structure, electrical property is improved. An average sheet resistance of 287.1 Omega/square and high resistance uniformity of 0.82% are obtained across the 2-inch epilayer wafer with an equivalent Al composition of 38%. Hall measurement shows that the mobility of two-dimensional electron gas (2DEG) is 1852 cm(2)/V s with a sheet carrier density of 1.2 x 10(13) cm(-2) at room temperature. The root mean square roughness (RMS) value is 0.159 nm with 5 x 5 mu m(2) scan area and the monolayer steps are clearly observed. The reason for the property improvement is discussed. (c) 2008 Elsevier Ltd. All rights reserved.

Quantum Confinement and Electronic Properties of Rutile TiO2 Nanowires

The quantum confinement effect, electronic properties, and optical properties of TiO2 nanowires in rutile structure are investigated via first-principles calculations. We calculate the size- and shape-dependent band gap of the nanowires and fit the results with the function E-g = E-g(bulk) + beta/d(alpha). We find that the quantum confinement effect becomes significant for d < 25 angstrom, and a notable anisotropy exists that arises from the anisotropy of the effective masses. We also evaluate the imaginary part of the frequency-dependent dielectric function [epsilon(2)(omega)] within the electric-dipole approximation, for both the polarization parallel [epsilon(parallel to)(2)(omega)] and the perpendicular [epsilon 1/2(omega)] to the axial (c) direction. The band structure of the nanowires is calculated, with which the fine structure of epsilon(parallel to)(2)(omega) has been analyzed.

Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy

ZnO film of 8 mu m thickness was grown on a sapphire (0 0 1) substrate with a GaN buffer layer by a novel growth technique called metal-source vapor phase epitaxy (MVPE). The surface of ZnO film measured by scanning electron microscope (SEM) is smooth and shows many regular hexagonal features. The full width at half maximum (FWHM) of ZnO(0 0 2) and (1 0 2) omega-scan rocking curves are 119 and 202 arcsec, corresponding a high crystal quality. The status of the strain in ZnO thick film was particularly analyzed by X-ray diffraction (XRD) omega-20 scanning. The results show that the strain in ZnO film is compressive, which is also supported by Raman scattering spectroscopy. The compressive strain can solve the cracking problem in the quick growth of ZnO thick film. (c) 2008 Elsevier Ltd. All rights reserved.

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

High-quality AlGaN/GaN high electron mobility transistor (HEMT) structures were grown by metalorganic chemical vapor deposition (MOCVD) on 2-in. sapphire substrates. Two-dimensional electron gas (2DEG) mobility of 1410 cm(2)/Vs and concentration of 1.0X10(13) CM-2 are obtained at 295 K from the HEMT structures, whose average sheet resistance and sheet resistance uniformity are measured to be about 395 Omega/sq and 96.65% on 2-in. wafers, respectively. AlGaN/GaN HEMTs with 0.8 mu m gate length and 0.2 mm gate width were fabricated and characterized using the grown HEMT structures. Maximum current density of 0.9 A/ mm, peak extrinsic transconductance of 290 mS/mm, unity cutoff frequency (f(T)) of 20 GHz and maximum oscillation frequency (f(max) of 46 GHz are achieved. These results represent significant improvements over the previously fabricated devices with the same gate length, which are attributed to the improved performances of the MOCVD-grown HEMT structures. (c) 2005 Elsevier Ltd. All rights reserved.

Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells

The influence of dislocations on photoluminescence (PL) of InGaN/GaN multiple quantum wells (MQWs) is investigated by triple-axis x-ray diffraction (TAXRD), transmission electron microscopy (TEM), and PL spectra. The omega scan of every satellite peak by TAXRD is adopted to evaluate the mean screw and edge dislocation densities in MQWs. The results show that dislocations can lead to a reduction of the PL-integrated intensity of InGaN/GaN MQWs under certain conditions, with edge dislocations playing a decisive role. Additionally, the dislocations can broaden the PL peak, but the effect becomes evident only under the condition when the interface roughness is relatively low. (C) 2005 American Institute of Physics.

Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts

A new measurement method for GaN films and their Schottky contacts is reported in this paper. Instead of the fabrication of Ohmic contacts, this measurement is based on a special back-to-back Schottky diode that has a rectifying character. A mathematical model indicates that the electronic parameters of the materials can be deduced from the device's I-V data. In the experiment of an unintentionally doped n-type GaN layer with a residual carrier density 7 x 10(16) cm(-3), the analysis by the new method gives the layer's sheet resistance rho(s) = 497 Omega, the electron mobility mu(n) =, 613 cm(2) V-1 s(-1) and the ideality factor of the Ni/Au-GaN Schottky contacts n = 2.5, which are close to the data obtained by the traditional measurements: rho(s) = 505 Omega, mu(n) = 585 cm(2) V-1 s(-1) and n = 3.0. The method reported can be adopted not only for GaN films but also for other semiconductor materials, especially in the cases where Ohmic contacts of high quality are hard to make or their fabricating process affects the film's character.