Talbot effect of a high-density grating under femtosecond laser illumination

The Talbot effect of a high-density grating under femtosecond laser illumination is analyzed with rigorous electromagnetic theory which is based on the Fourier decomposition and the rigorous coupled-wave analysis (RCWA). Numerical simulations show that the contrast of the Talbot images steadily decreases as the transmitted femtosecond laser pulses propagate forward and with wider spectrum width of the femtosecond laser pulses. The Talbot images of high-density gratings have much higher sensitivity of the spectrum widths of the incident laser pulses than those of the traditional low-density gratings. In experiments, the spectrums and the pulse widths of the incident pulses are measured with a frequency-resolved optical grating (FROG) apparatus. The Talbot images are detected by using a Talbot scanning near-field optical microscopy (Talbot-SNOM) technique, which are in coincidence with the numerical simulations. This effect should be useful for developing new femtosecond laser techniques and devices. (C) 2008 Elsevier B.V. All rights reserved.

Single mode Er-doped pi-phase-shifted distributed feedback fibre grating laser

A novel method incorporating the shielded method and the post-processing method has been proposed to fabricate the pi-phase-shilted fibre grating. Then an Er-doped pi-phase-shifted distributed feedback fibre grating laser has been fabricated using the grating. The laser threshold is 20 mW. When pumped with 90 mW light at 980 nm, the laser gives an output of 1.1 mW. Its signal-to-noise ratio is better than 60 dB. It is demonstrated that the laser is single mode operation by means of a Fabry-Perot scanning interferometer.

Femtosecond laser-induced crystallization in amorphous Ge2Sb2Te5 films

Crystallization in amorphous Ge2Sb2Te5 films by irradiation with femtosecond laser was investigated. The reflectivity and X-ray diffraction measurements confirmed that the crystalline state has been achieved in amorphous Ge2Sb2Te5 films under the irradiation of fermosecond laser with an average power of 65 mW at a frequency of 1000 Hz and a pulsed width of 120 fs. The surface morphology before and after femtosecond laser irradiation was studied by scanning electron microscope; results showed that the surface of films with irradiation of femtosecond laser was composed of some the crystallized micro-region. (C) 2004 Elsevier B.V. All rights reserved.

Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation

The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge2Sb2Te5 films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mJ/cm(2), respectively. (c) 2005 Elsevier B.V. All rights reserved.

Encircled energy measurement for focusing lens based on scanning Hartmann test

The encircled energy of a focusing lens is one of the parameters directly affecting the target efficiency in high-power laser facilities. The direct measurement method of the encircled energy for the focusing lens based on the scanning Hartmann test is proposed in this paper. With the scanning Hartmann test setup, the information in the whole aperture of the focusing lens can be achieved. The encircled energy can be obtained by analyzing the spot diagram on the focal plane of the focusing lens. In experiments, the encircled energy of an aspheric focusing lens is measured using this method. The measurement result is in good agreement with that derived from measurement data by an interferometer and the difference is 7.7%. (C) 2006 Elsevier GmbH. All rights reserved.

Formation of array microstructures on silicon by multibeam interfered ferntosecond laser pulses

We report on an optical interference method to fabricate array microstructures on the surface of silicon wafers by means of five-beam interference of femtosecond laser pulses. Optical microscope and scanning electron microscope observations revealed microstructures with micrometer-order were fabricated. The diffraction characteristics of the fabricated structures were evaluated. The present technique allows one-step realization of functional optoelectronic devices on silicon surface. (C) 2004 Elsevier B.V. All rights reserved.

Deposition of Au/TiO2 film by pulsed laser

Au nanoparticles, which were photoreduced by a Nd:YAG laser in HAuCl4 solution containing TiO2 colloid and accompanied by the TiO2 particles, were deposited on the substrate surface. The film consisting of Au/TiO2 particles was characterized by the absorption spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. The adhesion between the film and substrate was evaluated by using adhesive tape test. It was found that the presence of TiO2 dramatically enhanced the adhesion strength between the film and the substrate, as well as the deposition rate of film. The mechanism for the deposition of Au/TiO2 film was also discussed. (c) 2005 Elsevier B.V. All rights reserved.

Formation of arrayed holes on metal foil and metal film by multibeam interfering femtosecond laser beams

We report on an optical interference method to fabricate arrayed holes on metal nickel foil and aluminum film deposited on glass substrate by means of five-beam interference of femtosecond laser pulses. Optical microscope and scanning electron microscope observations revealed that arrayed holes of micrometre-order were fabricated on both metal foil and metal film. The present technique allows one-step, large-area, micrometric processing of metal materials for potential industrial applications.

Optical transfer of periodic microstructures by interfering femtosecond laser beams

We report on an optical interference method for transferring periodic microstructures of metal film from a supporting substrate to a receiving substrate by means of five-beam interference of femtosecond laser pulses. Scanning electron microscopy and optical microscopy revealed microstructures with micrometer-order were transferred to the receiving substrate. In the meanwhile, a negative copy of the transferred structures was induced in the metal film on the supporting substrate. The diffraction characteristics of the transferred structures were also evaluated. The present technique allows one-step realization of functional optoelectronic devices. (C) 2005 Optical Society of America.

Laser conditioning and multi-shot laser damage accumulation effects of HfO2/SiO2 antireflective coatings

Laser conditioning effects of the HfO2/SiO2 antireflective (AR) coatings at 1064 nm and the accumulation effects of multishot laser radiation were investigated. The HfO2/SiO2 AR coatings were prepared by E-beam evaporation (EBE). The singleshot and multi-shot laser induced damage threshold was detected following ISO standard 11254-1.2, and the laser conditioning was conducted by three-step raster scanning method. It was found that the single-shot LIDT and multi-shot LIDT was almost the same. The damage mostly > 80% occurred in the first shot under multi-shot laser radiation, and after that the damage occurring probability plummeted to < 5%. There was no obvious enhancement of the laser damage resistance for both the single-shot and multi-shot laser radiation of the AR coatings after laser conditioning. A Nomarski microscope was employed to map the damage morphology, and it found that the damage behavior is defect-initiated for both unconditioned and conditioned samples. © 2004 Elsevier B.V. All rights reserved.

Effects of CO2 laser conditioning of the antireflection Y2O3/SiO2 coatings at 351 nm

Y2O3/SiO2 coatings were deposited on fused silica by electron beam evaporation. A continuous wave CO2 laser was used to condition parts of the prepared samples at different scanning speeds in the air. LAMBDA 900 spectrometer was used to investigate the changes of the transmittance and residual reflection spectrum. A Nomarski microscope under dark field was used to examine the changes of the micro defect density. The changes of the surface roughness and the microstructure of the film before and after conditioning were investigated by AFM and X-ray diffraction, respectively. We found that laser-induced damage threshold (LIDT) of the films conditioning at 30 mm/s scanning speed was increased by more than a factor of 3 over the thresholds of the as-deposited films. The conditioning effect was correlated with an irradiation-induced decrease of the defect density and absorption of the films. (c) 2005 Elsevier B.V. All rights reserved.

Laser conditioning of ZrO2 : Y2O3/SiO2 mirror coatings prepared by E-beam evaporation

Laser conditioning effects of the dielectric mirror coatings with different designs were investigated. Simple quarter-wave ZrO2:Y2O3/SiO2 mirrors and half-wave SiO2 over-coated ZrO2:Y2O3/SiO2 mirror coatings were fabricated by E-beam evaporation (EBE). The absorbance of the samples before and after laser conditioning was measured by surface thermal lensing (STL) technology and the defects density was detected under Nomarski microscope. The enhancement of the laser damage resistance was found after laser conditioning. The dependence of the laser conditioning on the coating design was also observed and the over-coated sample obtained greatest enhancement, whereas the absorbance of the samples did not change obviously. During the sub-threshold fluence raster scanning, the minor damage about defects size was found and the assumption of pre-damage mechanism, based on the functional damage concept, was put forward. The improvement of the laser induced damage threshold (LIDT) was attributed to the benign damage of the defects and the dependence on the coating design owed to the damage growth behavior of different coating designs. (C) 2004 Elsevier B.V. All rights reserved.

Y2O3 stabilized ZrO2 thin films deposited by electron beam evaporation: Structural, morphological characterization and laser induced damage threshold

Four kinds of Y2O3 stabilized ZrO2 (YSZ) thin films with different Y2O3 content have been prepared on BK7 substrates by electron-beam evaporation method. Structural properties and surface morphology of thin films were investigated by X-ray diffraction (XRD) spectra and scanning probe microscope. Laser induced damage threshold (LIDT) was determined. It was found that crystalline phase and microstructure of YSZ thin films was dependent on Y2O3 molar content. YSZ thin films changed from monoclinic phase to high temperature phase (tetragonal and cubic) with the increase of Y2O3 content. The LIDT of stabilized thin film is more than that of unstabilized thin films. The reason is that ZrO2 material undergoes phase transition during the course of e-beam evaporation resulting in more numbers of defects compared to that of YSZ thin films. These defects act as absorptive center and the original breakdown points. (c) 2006 Elsevier B.V. All rights reserved.

Laser-induced damage of Ti O2 Si O2 high reflector at 1064 nm

A high laser-induced damage threshold (LIDT) TiO2/SiO2 high reflector (HR) at 1064 nm is deposited by e-beam evaporation. The HR is characterized by optical properties, surface, and cross section structure. LIDT is tested at 1064 nm with a 12 ns laser pulse in the one-on-one mode. Raman technique and scanning electron Microscope are used to analyze the laser-induced modification of HR. The possible damage mechanism is discussed. It is found that the LIDT of HR is influenced by the nanometer precursor in the surface, the intrinsic absorption of film material, the compactness of the cross section and surface structure, and the homogeneity of TiO2 layer. Three typical damage morphologies such as flat-bottom pit, delamination, and plasma scald determine well the nanometer defect initiation mechanism. The laser-induced crystallization consists well with the thermal damage nature of HR. (C) 2008 American Institute of Physics.

Desenvolvimento do sistema reprodutivo de Echinostoma paraensei (Trematoda: Digenea) de hamsters (Mesocricetus auratus) experimentalmente infectados, analisado por microscopia de luz de campo e microscopia laser confocal

O conhecimento da morfologia e ultraestrutura dos helmintos permite a correta classificação destes organismos, bem como fornece subsídios que poderão ser utilizados para diagnóstico e controle. A microscopia laser confocal é uma ferramenta para estudar a organização estrutural de várias espécies de helmintos, possibilitando acesso a detalhes morfológicos não evidenciados pela microscopia óptica. Echinostoma paraensei é um trematódeo, digenético, hermafrodita parasito de numerosos hospedeiros vertebrados. Neste trabalho foi investigado o desenvolvimento dos órgãos reprodutivo e a morfometria de E. paraensei, desde a fase jovem até a adulta, como contribuição ao conhecimento do desenvolvimento reprodutivo desta espécie. Os trematódeos foram recuperados aos 3, 4, 5, 6, 7, 10, 14 e 21 dias posterior à infecção (dpi) experimental em hamsters. Estes foram corados em carmim clorídrico, desidratados em série alcoólica e montados em lâmina permanente em bálsamo do Canadá, fotografados e medidos usando microscopia de luz de campo claro (MCC) e microscopia de varredura laser confocal (MVLC). Entre 3 e 4 dpi, os primórdios genitais estavam presentes e nenhuma organização do sistema reprodutivo foi visualizada por MCC e MVLC. Os primórdio do ovário, dos testículos e da bolsa do cirro foram visualizados por MCC aos 5 e 6 dpi, no entanto, MVLC dos helmintos aos 5dpi mostra que estes primórdios, o ootipo e o útero estavam presentes, como estruturas individualizadas. A bolsa do cirro apresenta metratermo e o ovário com primórdio do oótipo adjacente aos 7dpi por MVLC. A vesícula seminal, receptáculo seminal, células diferenciadas nos testículos, ducto e reservatório vitelínico e oviducto foram visualizados após 10 dias, enquanto os espermatozóides na vesícula seminal, ovos e oócitos, células vitelínicas, poro e canal de Laurer aos 14 dias. A morfometria evidencia um acelerado crescimento dos órgãos reprodutores a partir do 7 dia. Os testículos apresentam aumento significativo no comprimento do 7 ao 21 dia e o ovário durante o período de 7 à 10 dpi. Aos 21 dpi, todos os helmintos apresentaram glândulas vitelínicas, útero contendo ovos e espermatozóides no oviducto enquanto outros ovos estão sendo formados. As mudanças morfológicas acentuadas durante a gametogênese consistem no aumento do comprimento do helminto, maturação das gônadas, desenvolvimento e maturação das glândulas vitelínicas. O desenvolvimento do helminto como um todo está relacionado à maturação dos órgãos reprodutivo masculino e feminino indicando o investimento deste trematódeo em garantir a produção e eliminação dos ovos ao meio exterior.