Evaluation of the PV cell operation temperature in the process of fast switching to open-circuit mode

A procedure for measuring the overheating temperature (ΔT ) of a p-n junction area in the structure of photovoltaic (PV) cells converting laser or solar radiations relative to the ambient temperature has been proposed for the conditions of connecting to an electric load. The basis of the procedure is the measurement of the open-circuit voltage (VO C ) during the initial time period after the fast disconnection of the external resistive load. The simultaneous temperature control on an external heated part of a PV module gives the means for determining the value of VO C at ambient temperature. Comparing it with that measured after switching OFF the load makes the calculation of ΔT possible. Calibration data on the VO C = f(T ) dependences for single-junction AlGaAs/GaAs and triple-junction InGaP/GaAs/Ge PV cells are presented. The temperature dynamics in the PV cells has been determined under flash illumination and during fast commutation of the load. Temperature measurements were taken in two cases: converting continuous laser power by single-junction cells and converting solar power by triple-junction cells operating in the concentrator modules.

NARRATIVAS DE EXPERIÊNCIAS VIVIDAS POR DOCENTES E DISCENTES COM USO DE TECNOLOGIA DE INFORMAÇÃO E COMUNICAÇÃO – TDIC NA EDUCAÇÃO BÁSICA

Vivemos um período de transformações políticas, econômicas, sociais e culturais que, a todo instante, nos impõe desafios. Neste contexto, nas últimas décadas, o uso da tecnologia tem sido ampliado na realização de diversas atividades cotidianas, na divulgação de informações, na comunicação, como forma de expressão e organização da sociedade. A escola, enquanto instituição social, precisa reconhecer esta nova realidade, esta diferente possibilidade de aquisição e transformação de saber, para que possa intervir, ressignificar e redirecionar sua ação, a fim de atender as demandas de seu tempo. O objetivo geral desta pesquisa, a partir da apresentação e análise de experiências realizadas com o uso de Tecnologias da Informação e Conhecimento, é o de refletir sobre como inserir estas ferramentas no processo de ensinar e aprender na escola a partir da visão de professores e alunos, visando a formação integral do educando. Deste modo, no desenvolvimento, entendemos como necessário conhecer e considerar o contexto histórico, bem como as perspectivas relacionadas a escola e seus protagonistas (professores e estudantes) na chamada Sociedade da Informação e do Conhecimento. Ressaltamos a importância do docente (sua formação) e seu papel de mediador nos processos de aprendizagem, assim como a recepção à tecnologia, observando função e espaço de atuação desta. Destacamos experiências com a utilização de TDIC, realizada por professores e alunos, como a produção de game, revistas científicas, escrita de histórias, produções artísticas, blogs, vlogs, discussões em grupos presentes em redes sociais. A metodologia utilizada nesta pesquisa é qualitativa, na modalidade de pesquisa-ação e narrativa, em função do envolvimento com o grupo e com as atividades desenvolvidas, nas quais os participantes compartilham com o pesquisador suas histórias pessoais e de aprendizagem relacionadas às ações ou às atividades que realiza, fornecendo informações e indícios relevantes sobre o seu processo de formação ao longo do tempo. A revisão de literatura foi realizada por meio de análise bibliográfica e documental em livros, teses, dissertações, periódicos específicos sobre o assunto, além de artigos publicados na Internet. A coleta de dados foi realizada a partir de conversas informais, entrevistas semiestruturadas e filmagem dos relatos. A análise foi realizada a partir da abordagem hermenêutico-fenomenológica, que busca descrever e interpretar fenômenos da experiência humana, a fim de investigar a essência por meio da identificação de temas. Os resultados apontam para a necessidade e possibilidade da ampliação da utilização de TDIC como recurso no processo de ensino e aprendizagem, por meio de formação, diálogo, interação, intencionalidade, expectativas, esperança e seus desdobramentos.

Self-standing curved crystals for X and Gamma rays focusing

The efficiency of a Laue lens for X and Gamma ray focusing in the energy range 60 ÷ 600 keV is closely linked to the diffraction efficiency of the single crystals composing the lens. A powerful focusing system is crucial for applications like medical imaging and X ray astronomy where wide beams must be focused. Mosaic crystals with a high density, such as Cu or Au, and bent crystals with curved diffracting planes (CDP) are considered for the realization of a focusing system for X rays, owing to their high diffraction efficiency. In this work, a comparison of the efficiency of CDP crystals and mosaic crystals was performed on the basis of the theory of X-ray diffraction. Si, GaAs and Ge CDP crystals with optimized thicknesses and moderate radii of curvature of several tens of metres demonstrate comparable or superior performance with respect to the higher atomic number mosaic crystals generally used. A simplified approach for calculating the integrated reflectivity of the crystals is applied. A bending technique used during this work to realize CDP crystals consists in a controlled surface damaging induced by a mechanical lapping process. A compressive strained layer of few micrometres in thickness is generated and causes the convex curvature of the damaged side of the crystal. Another new bending technique is developed and the main results are shown. The process consists on a film deposition of a selected bi-component epoxy resin on one side of crystal, made uniform in thickness by mean of a spin-coater. Choosing the speed of spin-coating, so changing the thickness of the film, a control of radius of curvature can be obtained. Moreover the possibility to combine the two bending technique to obtain CDP crystal with a stronger curvature in rather thick crystals was demonstrated. Detailed characterization of Si, and GaAs CDP crystals at low and high x-ray energies are performed on flat and bent crystals obtained with the damaging and the resin deposition technique. As expected an increase of diffraction efficiency in asymmetrical diffraction geometry in CDP crystals with respect to the flat ones is observed. On the other hand an unexpected increase of the integrated intensity in symmetrical geometry, not predicted by the theory, is observed in all the measurements performed with different set up. The experimental trend of the integrated reflectivity as a function of the radius of curvature is in a good agreement with that predicted by the theory of bent perfect crystals, so it is possible to conclude that the surface damage has a limited effect on the crystal reflectivity. A study of the integrated reflectivity in the energy range of interest (100÷350 keV) in CDP crystals realized with damaging and resin deposition technique at symmetrical and asymmetrical geometries was performed at ILL Institute. Also at these energies the diffraction efficiency of bent crystals was much larger (a 12 time increase is observed for bent crystals in asymmetrical 111 geometry) than that measured in flat crystals. The diffraction efficiency of CDP crystals realized with both techniques tends to coincide with that of flat crystals at very high energies (> 200 keV). This suggesting that also real flat perfect crystals can be considered as strongly bent or mosaic crystals at very high X ray energies.

Subband energy in two-band δ-doped semiconductors

We study electron dynamics in a two-band δ-doped semiconductor within the envelope-function approximation. Using a simple parametrization of the confining potential arising from the ionized donors in the δ -doping layer, we are able to find exact solutions of the Dirac-type equation describing the coupling of host bands. As an application we then consider Si δ -doped GaAs. In particular we find that the ground subband energy scales as a power law of the Si concentration per unit area in a wide range of doping levels. In addition, the coupling of host bands leads to a depression of the subband energy due to nonparabolicity effects.

Polarized interacting exciton gas in quantum wells and bulk semiconductors

We develop a theory to calculate exciton binding energies of both two- and three-dimensional spin polarized exciton gases within a mean field approach. Our method allows the analysis of recent experiments showing the importance of the polarization and intensity of the excitation light on the exciton luminescence of GaAs quantum wells. We study the breaking of the spin degeneracy observed at high exciton density (5×1010 cm2). Energy level splitting between spin +1 and spin -1 is shown to be due to many-body interexcitonic exchange while the spin relaxation time is controlled by intraexciton exchange. © 1996 The American Physical Society.

Spin splitting in a polarized quasi-two-dimensional exciton gas

We have observed a large spin splitting between "spin" +1 and -1 heavy-hole excitons, having unbalanced populations, in undoped GaAs/AlAs quantum wells in the absence of any external magnetic field. Time-resolved photoluminescence spectroscopy, under excitation with circularly polarized light, reveals that, for high excitonic density and short times after the pulsed excitation, the emission from majority excitons lies above that of minority ones. The amount of the splitting, which can be as large as 50% of the binding energy, increases with excitonic density and presents a time evolution closely connected with the degree of polarization of the luminescence. Our results are interpreted on the light of a recently developed model, which shows that, while intraexcitonic exchange interaction is responsible for the spin relaxation processes, exciton-exciton interaction produces a breaking of the spin degeneracy in two-dimensional semiconductors.

Single-exciton spectroscopy of single Mn doped InAs quantum dots

The optical spectroscopy of a single InAs quantum dot doped with a single Mn atom is studied using a model Hamiltonian that includes the exchange interactions between the spins of the quantum dot electron-hole pair, the Mn atom, and the acceptor hole. Our model permits linking the photoluminescence spectra to the Mn spin states after photon emission. We focus on the relation between the charge state of the Mn, A0 or A−, and the different spectra which result through either band-to-band or band-to-acceptor transitions. We consider both neutral and negatively charged dots. Our model is able to account for recent experimental results on single Mn doped InAs photoluminescence spectra and can be used to account for future experiments in GaAs quantum dots. Similarities and differences with the case of single Mn doped CdTe quantum dots are discussed.

Ultrafast coherent spectroscopy of the Fermi edge singularity

Paper submitted to the XVI Sitges Conference on Statistical Mechanics, Sitges, Barcelona, Spain, 7-11 June 1999.

Substantial enlargement of angular existence range for Dyakonov-like surface waves at semi-infinite metal-dielectric superlattice

We investigated surface waves guided by the boundary of a semi-infinite layered metal-dielectric nanostructure cut normally to the layers and a semi-infinite dielectric material. Using the Floquet-Bloch formalism, we found that Dyakonov-like surface waves with hybrid polarization can propagate in dramatically enhanced angular range compared to conventional birefringent materials. Our numerical simulations for an Ag-GaAs stack in contact with glass show a low to moderate influence of losses.

Terahertz Response of Excitons in Nanorod Heterostructures

Quantum-confined systems are one of the most promising ways to enable us to control a material's interactions with light. Nanorods in particular offer the right dimensions for exploring and manipulating the terahertz region of the spectrum. In this thesis, we model excitons confined inside a nanorod using the envelope function approximation. A region-matching transfer matrix method allows us to simulate excitonic states inside arbitrary heterostructures grown along the length of the rod. We apply the method to colloidal CdSe rods 70 nm in length and under 10 nm in diameter, capped with ligands of DDPA and pyridine. We extend past studies on these types of rods by taking into account their dielectric permittivity mismatch. Compared to previous calculations and experimentally measured terahertz absorption, we predict a higher energy main 1S$z$ to 2P$z$ transition peak. This indicates that the rods are likely larger in diameter than previously thought. We also investigate a nanorod with GaAs/Al$_{0.3}$Ga$_{0.7}$As coupled double dots. The excitonic transitions were found to be manipulable by varying the strength of an applied electric field. We employ quasi-static state population distributions to simulate the effects of exciton relaxation from optically active states to dim ground states. A critical value of the applied field, corresponding to the exciton binding energy of ~18 meV, was found to dramatically alter the terahertz absorption due to state mixing. Above this critical field, more nuanced shifts in transition energies were observed, and gain from radiative relaxation to the ground state is predicted.

Utilização de agentes biológicos no tratamento do lúpus eritematoso cutâneo

Trabalho Final do Curso de Mestrado Integrado em Medicina, Faculdade de Medicina, Universidade de Lisboa, 2014

Traité de mécanique rationnelle,

Vol. 4 of this edition wanting in L.C.

Photovoltaic research branch semiannual report : period covered : 1 October 1979 to 31 March 1980 /

This report covers SERI research activities on solid-state theory, high-efficiency cells, thin-film cells, silicon purification, silicon crystallization, thick-film technology, surface and interface analysis, and growth of GaAs and related compounds by metal-organic chemical vapor desposition.

Dictionnaire universel d'histoire naturelle /

Contiene 14 vols de texto y 3 de atlas.