Deposition and photo-induced electrical resistivity of dip-coated NiO thin films from a precipitation process

Thin films of the semiconductor NiO are deposited using a straightforward combination of simple and versatile techniques: the co-precipitation in aqueous media along with the dip- coating process. The obtained material is characterized by gravimetric/differential thermal analysis (TG-DTA) and X-ray diffraction technique. TG curve shows 30 % of total mass loss, whereas DTA indicates the formation of the NiO phase about 578 K (305 C). X-ray diffraction (XRD) data confirms the FCC crystalline phase of NiO, whose crystallinity increases with thermal annealing temperature. UV-Vis optical absorption measurements are carried out for films deposited on quartz substrate in order to avoid the masking of bandgap evaluation by substrate spectra overlapping. The evaluated bandgap is about 3.0 eV. Current-voltage (I-V) curves measured for different temperatures as well as the temperature-dependent resistivity data show typical semiconductor behavior with the resistivity increasing with the decreasing of temperature. The Arrhenius plot reveals a level 233 meV above the conduction band top, which was attributed to Ni2+ vacancy level, responsible for the p-type electrical nature of NiO, even in undoped samples. Light irradiation on the films leads to a remarkable behavior, because above bandgap light induced a resistivity increase, despite the electron-hole generation. This performance was associated with excitation of the Ni 2+ vacancy level, due to the proximity between energy levels. © 2012 Springer Science+Business Media New York.

Influence of the indium concentration on microstructural and electrical properties of proton conducting NiO-BaCe0.9-xIn xY0.1O3-δ cermet anodes for IT-SOFC application

Optimization of the major properties of anodes based on proton conductors, such as microstructure, conductivity and chemical stability, is yet to be achieved. In this study we investigated the influence of indium on the chemical stability, microstructural and electrical characteristics of proton conducting NiO-BaCe0.9-xInxY0.1O 3-δ (NiO-BCIYx) anodes. Four compositions of cermet anode substrates NiO-BCIYx were prepared using the method of evaporation and decomposition of solutions and suspensions (EDSS). Sintered anode substrates were reduced and their microstructural and electrical properties were examined before and after reduction as a function of the amount of indium. Anode substrates tested on chemical stability in the CO2 atmosphere showed high stability compared to anode substrates based on commonly used doped barium cerates. Microstructural properties of the anode pellets before and after testing in CO2 were investigated using X-ray diffraction analysis. Impedance spectroscopy measurements were used for evaluation of electrical properties of the anode pellets and the conductivity values of reduced anodes of more than 14 S cm-1 at 600 °C confirmed percolations through Ni particles. Under fuel cell operating conditions, the cell with a Ni-BCIY20 anode achieved the highest performance, demonstrating a peak power density 223 mW/cm2 at 700 °C confirming the functionality of Ni-BCIY anodes.© 2013 Elsevier B.V. All rights reserved.

Inversion method for obtaining electrical parameters for soil in the rural region in Brazil

This paper presents an inversion methodology through weighted least squares to obtain the electrical parameters for the soil of a typical mid-western region in Brazil using the model based in the formalism of the parabolic equations to calculate the electric field intensity received. To validate this methodology, the results of the radio signal measurement campaign conducted in six radial routes leaving the city of Brasilia, Federal District, where the transmitter was located, were used. The measurements were compared to computer simulations and, thus, the optimal values for the electric conductivity and relative permittivity for the soil of the region could be estimated. Finally, a quantitative analysis of these parameters was performed with the values found in the literature, which demonstrated the effectiveness of the proposed methodology.

Electrical properties of multidoped ceria

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of a Polymeric Protective Coating on Optical and Electrical Properties of Poly(p-phenylene vinylene) Derivatives

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Photo-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Lead-free BaBi4Ti4O15 ceramics: Effect of synthesis methods on phase formation and electrical properties

The processing of ferroelectric BaBi4Ti4O15 (BBT) ceramics from powders prepared by conventional solid state reaction (SSR) and mechanochemical activation (MA) has been investigated. It was shown that MA synthesis reduces the synthesis temperature of BBT powders, leading to smaller particles with reduced anisotropy and consequently to smaller grain size of ceramics. Dielectric properties were investigated in a wide range of temperatures (20-800 degrees C) and frequencies (1.21 kHz to 1 MHz). The relative dielectric permittivity at Curie temperature was higher for solid state obtained ceramics than for the mechanically treated ones. The conductivity of sintered samples was studied, suggesting decreasing of conductivity of BBT-MA in comparison with BBT-SS ceramics. The influence of the grain and the grain boundaries contribution to the dielectric behavior in both ceramics was analyzed through impedance spectroscopy. A well-defined ferroelectric hysteresis loop was obtained for both samples. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Influence of the concentration of Sb2O3 on the electrical properties of SnO2 varistors

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Supramolecular organization-electrical properties relation in nanometric organic films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Improved electrical transport in lightly Er-doped sol-gel spin-coating SnO2 thin films, processed by photolithography

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Electrical and Thermal study of carbon nanotubes reinforced poly (phenylene sulfide) nanostructured composites

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Studies on structural, morphological and electrical properties of Ce1-xErxO2-delta (x=0.05-0.20) as solid electrolyte for IT - SOFC

A series of four different powders ceria doped Ce1-xErxO2-delta (0.05 <= x <= 0.20) were synthesized by applying self-propagating reaction at room temperature (SPRT method). SPRT procedure is based on the self-propagating room temperature reaction between metal nitrates and sodium hydroxide, wherein the reaction is spontaneous and terminates extremely fast. The method is known to assure very precise stoichiometry of the final product in comparison with a tailored composition. XRPD, Raman spectroscopy, TEM and BET measurements were used to characterize the nanopowders at room temperature. It was shown that all obtained powders were single phase solid solutions with a fluorite-type crystal structure and all powder particles have nanometric size (about 3-4 nm). Densification was performed at 1550 degrees C, in an air atmosphere for 2 h. XRPD, SEM and complex impedance method measurements were carried out on sintered samples. Single phase form was evidenced for each sintered materials. The best value of conductivity at 700 degrees C amounted to 1.10 x 10(-2) Omega(-1) cm(-1) for Ce0.85Er0.O-3(2-delta) sample. Corresponding activation energies of conductivity amounted to 0.28 eV in the temperature range 500-700 degrees C. (C) 2015 Elsevier B.V. All rights reserved.

Electrical transport mechanisms and structure of hydrogenated and non-hydrogenated nanocrystalline Ga1-xMnxAs films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Complementary study on the electrical and structural properties of poly(3-alkylthiophene) and its copolymers synthesized on ITO by electrochemical impedance and Raman spectroscopy

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Investigation of photoinduced electrical properties in the heterojunction TiO2/SnO2

TiO2/SnO2 thin films heterostructures were grown by the sol-gel dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550 degrees C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100 degrees C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. The electrical properties of TiO2/SnO2 heterostructure were evaluated as function of temperature and excitation with different light sources. The temperature dependence of conductivity is dominated by a deep level with energy coincident with the second ionization level of oxygen vacancies in SnO2, suggesting the dominant role of the most external layer material (SnO2) to the electrical transport properties. The fourth harmonic of a Nd:YAG laser line (4.65 eV) seems to excite the most external layer whereas a InGaN LED (2.75 eV) seems to excite electrons from the ground state of a quantized interfacial channel as well as intrabandgap states of the TiO2 layer.