Ab initio study of anharmonicity in high pressure Cmca-4 metallic hydrogen

Hydrogen is the only atom for which the Schr odinger equation is solvable. Consisting only of a proton and an electron, hydrogen is the lightest element and, nevertheless, is far from being simple. Under ambient conditions, it forms diatomic molecules H2 in gas phase, but di erent temperature and pressures lead to a complex phase diagram, which is not completely known yet. Solid hydrogen was rst documented in 1899 [1] and was found to be isolating. At higher pressures, however, hydrogen can be metallized. In 1935 Wigner and Huntington predicted that the metallization pressure would be 25 GPa [2], where molecules would disociate to form a monoatomic metal, as alkali metals that lie below hydrogen in the periodic table. The prediction of the metallization pressure turned out to be wrong: metallic hydrogen has not been found yet, even under a pressure as high as 320 GPa. Nevertheless, extrapolations based on optical measurements suggest that a metallic phase may be attained at 450 GPa [3]. The interest of material scientist in metallic hydrogen can be attributed, at least to a great extent, to Ashcroft, who in 1968 suggested that such a system could be a hightemperature superconductor [4]. The temperature at which this material would exhibit a transition from a superconducting to a non-superconducting state (Tc) was estimated to be around room temperature. The implications of such a statement are very interesting in the eld of astrophysics: in planets that contain a big quantity of hydrogen and whose temperature is below Tc, superconducting hydrogen may be found, specially at the center, where the gravitational pressure is high. This might be the case of Jupiter, whose proportion of hydrogen is about 90%. There are also speculations suggesting that the high magnetic eld of Jupiter is due to persistent currents related to the superconducting phase [5]. Metallization and superconductivity of hydrogen has puzzled scientists for decades, and the community is trying to answer several questions. For instance, what is the structure of hydrogen at very high pressures? Or a more general one: what is the maximum Tc a phonon-mediated superconductor can have [6]? A great experimental e ort has been carried out pursuing metallic hydrogen and trying to answer the questions above; however, the characterization of solid phases of hydrogen is a hard task. Achieving the high pressures needed to get the sought phases requires advanced technologies. Diamond anvil cells (DAC) are commonly used devices. These devices consist of two diamonds with a tip of small area; for this reason, when a force is applied, the pressure exerted is very big. This pressure is uniaxial, but it can be turned into hydrostatic pressure using transmitting media. Nowadays, this method makes it possible to reach pressures higher than 300 GPa, but even at this pressure hydrogen does not show metallic properties. A recently developed technique that is an improvement of DAC can reach pressures as high as 600 GPa [7], so it is a promising step forward in high pressure physics. Another drawback is that the electronic density of the structures is so low that X-ray di raction patterns have low resolution. For these reasons, ab initio studies are an important source of knowledge in this eld, within their limitations. When treating hydrogen, there are many subtleties in the calculations: as the atoms are so light, the ions forming the crystalline lattice have signi cant displacements even when temperatures are very low, and even at T=0 K, due to Heisenberg's uncertainty principle. Thus, the energy corresponding to this zero-point (ZP) motion is signi cant and has to be included in an accurate determination of the most stable phase. This has been done including ZP vibrational energies within the harmonic approximation for a range of pressures and at T=0 K, giving rise to a series of structures that are stable in their respective pressure ranges [8]. Very recently, a treatment of the phases of hydrogen that includes anharmonicity in ZP energies has suggested that relative stability of the phases may change with respect to the calculations within the harmonic approximation [9]. Many of the proposed structures for solid hydrogen have been investigated. Particularly, the Cmca-4 structure, which was found to be the stable one from 385-490 GPa [8], is metallic. Calculations for this structure, within the harmonic approximation for the ionic motion, predict a Tc up to 242 K at 450 GPa [10]. Nonetheless, due to the big ionic displacements, the harmonic approximation may not su ce to describe correctly the system. The aim of this work is to apply a recently developed method to treat anharmonicity, the stochastic self-consistent harmonic approximation (SSCHA) [11], to Cmca-4 metallic hydrogen. This way, we will be able to study the e ects of anharmonicity in the phonon spectrum and to try to understand the changes it may provoque in the value of Tc. The work is structured as follows. First we present the theoretical basis of the calculations: Density Functional Theory (DFT) for the electronic calculations, phonons in the harmonic approximation and the SSCHA. Then we apply these methods to Cmca-4 hydrogen and we discuss the results obtained. In the last chapter we draw some conclusions and propose possible future work.

Spectroscopic, and thermal studies of some new binuclear transition metal(II) complexes with hydrazone ligands containing acetoacetanilide and isoxazole

A new chelating ligand, 2-(2-(5-tert-butylisoxazol-3-yl)hydrazono)-N-(2,4-dimethylphenyl)-3-oxobutanamide (HL), and its four binuclear transition metal complexes, M-2(L)(2) (mu-OCH3)(2) [M = Ni(II), Co(II), Cu(II), Zn(II)], were synthesized using the procedure of diazotization, coupling and metallization. Their structures were postulated based on elemental analysis, H-1 NMR, MALDI-MS, FT-IR spectra and UV-vis electronic absorption spectra. Smooth films of these complexes on K9 glass substrates were prepared using the spin-coating method and their absorption properties were evaluated. The thermal properties of the metal(II) complexes were investigated by thermogravimetry (TG) and differential scanning calorimetry (DSC. Different thermodynamic and kinetic parameters namely activation energy (E

Nickel(II) and copper(II) complexes containing 2-(2-(5-substitued isoxazol-3-yl)hydrazono)-5,5-dimethylcyclohexane-1,3-dione ligands: Synthesis, spectral and thermal characterizations

Two new hydrazone chelating ligands, 2-(2-(5-methylisoxazol-3-yl)hydrazono)-5,5-dimethylcyclohexane-1,3-dione (HL1) and 2-(2-(5-tert-butylisoxazol-3-yl)hydrazono)-5,5-dimethylcyclohexane- 1,3-dione (HL2), and their nickel(II) and copper(II) complexes were synthesized using the procedure of diazotization, coupling and metallization. Their structures were postulated based on elemental analysis, H-1 NMR, ESI-MS, FT-IR spectra and UV-vis electronic absorption spectra. Smooth films of these complexes on K9 glass substrates were prepared using spin-coating and their absorption properties were evaluated. The thermal properties of the metal(II) complexes were investigated by thermogravimetry (TG) and differential thermogravimetry (DTG). Different thermodynamic and kinetic parameters namely activation energy (E

Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

Compositional analysis of thin film amorphous semiconductors and insulators using LIMA

LIMA (Laser-induced Ion Mass Analysis) is a new technique capable of compositional analysis of thin films and surface regions. Under UHV conditions a focused laser beam evaporates and ionizes a microvolume of specimen material from which a mass spectrum is obtained. LIMA has been used to examine a range of thin film materials with applications in electronic devices. The neutral photon probe avoids charging problems, and low conductivity materials are examined without prior metallization. Analyses of insulating silicon oxides, nitrides, and oxynitrides confirm estimates of composition from infrared measurements. However, the hydrogen content of hydrogenated amorphous silicon (a-Si : H) found by LIMA shows no correlation with values given by infrared absorption analysis. Explanations are proposed and discussed. © 1985.

Laminar to turbulent flow transition measurements using an array of SOI-CMOS MEMS wall shear stress sensors

The successful utilization of an array of silicon on insulator complementary metal oxide semiconductor (SOICMOS) micro thermal shear stress sensors for flow measurements at macro-scale is demonstrated. The sensors use CMOS aluminum metallization as the sensing material and are embedded in low thermal conductivity silicon oxide membranes. They have been fabricated using a commercial 1 μm SOI-CMOS process and a post-CMOS DRIE back etch. The sensors with two different sizes were evaluated. The small sensors (18.5 ×18.5 μm2 sensing area on 266 × 266 μm2 oxide membrane) have an ultra low power (100 °C temperature rise at 6mW) and a small time constant of only 5.46 μs which corresponds to a cut-off frequency of 122 kHz. The large sensors (130 × 130 μm2 sensing area on 500 × 500 μm2 membrane) have a time constant of 9.82 μs (cut-off frequency of 67.9 kHz). The sensors' performance has proven to be robust under transonic and supersonic flow conditions. Also, they have successfully identified laminar, separated, transitional and turbulent boundary layers in a low speed flow. © 2008 IEEE.

Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN

A metallization scheme of Ni/Ag/Ti/Au has been developed for obtaining high reflective contacts on p-type GaN. In order to find optimal conditions to get a high reflectivity, we studied samples with various Ni thicknesses, annealing temperatures and annealing times. By annealing at 500 degrees C for 5 min in an O-2 ambient, a reflectivity as high as 94% was obtained from Ni/Ag/Ti/Au (1/120/120/50 nm). The effects of Ti layers on the suppression of Ag agglomeration were investigated by using Auger electron spectroscopy (AES). From AES depth profiles, it is clear that Ti acts as a diffusion barrier to prevent Au atoms from diffusing into the Ag layer, which is important in the formation of high reflectivity.

The study of high temperature annealing of a-SiC : H films

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 A) gold film was evaporated on the half area of the aSiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 degrees C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

The study of high temperature annealing of a-SiC : H films

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 A) gold film was evaporated on the half area of the aSiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 degrees C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

DNA-Templated Gold Nanoparticles Formation

The interaction between HAuCl4 and DNA has enabled creation of DNA-templated gold nanoparticles without formation of large nanoparticles. It was found that spheral DNA-HAuCl4 hybrid of 8.7 nm in diameter, flower-like DNA-HAuCl4 hybrid, nanoparticles chains and nanoparticles network of DNA-HAuCl4 hybrid could be obtained by varying the reaction conditions, including DNA concentration and reaction temperature. The intermediate product was investigated by shortening the reaction time of DNA and HAuCl4, and the obtained nanoparticles preserved a small DNA segment, which indicated that the reaction between DNA and HAuCl4 had a process.

Fabrication of silver nanoparticles ring templated by plasmid DNA

Silver nanoparticles ring was successfully fabricated by electrostatic assembling 4-aminothiophenol (4-ATP) capped silver nanoparticles on predefined extended circular plasmid pBR322 DNA. The silver nanoparticles ring which was about 1.5 mu m in length, and about 2.2 nm in height can be obtained by adjusting the reaction time. The normal Raman scattering spectra reveal that the 4-ATP has contacted with the silver nanoparticles by forming a strong Ag-S bond. The AFM data show that the assembly of 4-ATP capped silver nanoparticles on DNA is ordered.

卷绕式海绵材料真空磁控溅射镀膜设备的研制

本文介绍了海绵卷绕真空磁控溅射镀膜设备的结构及其特点,采用独特的传动机构,靶极结构及控制方式实现了海绵连续卷绕真空磁控溅射镀膜。

西秦岭晚古生代弧前盆地沉积与成矿作用

The Western Qinling Orogenie belt in the Taibai-Fengxian and Xihe-Lixian areas can be subdivided into three units structurally from north to south, which are the island-arc, forearc basin and accretionary wedge, respectively. The forearc basin developed in the Late Paleozoic mainly controls sedimentation and some larger lead-zinc and gold deposits in the western Qinling. Stratigraphically, the island arc is dissected into the Liziyuan Group, the Danfeng Group and the Luohansi Group. The metavolcanic rocks include basic, intermediate and acidic rocks, and their geochemistry demonstrates that these igneous rocks generated in an island arc. Where, the basalts are subalkaline series charactered by low-medium potassium, with enriched LREE, negative Eu anomaly, and positive Nd anomaly. Cr-content of volcanic rocks is 2-3 times higher than that of island arc tholeiite all over the world. In addition, the lightly metamorphosed accretionary wedge in the areas of Huixian, Chengxian, Liuba and Shiqun is dominated by terrigenous sediments with carbonatite, chert, mafic and volcanic rocks. The age of the wedge is the Late Palaeozoic to the Trassic, while previous work suggested that it is the Silurian. The Upper Paleozoic between the island arc belt and accretionary wedge are mainly the sediments filled in the fore arc basin. The fillings in the forearc basin were subdivided into the Dacaiotan Group, the Tieshan Group, the Shujiaba Group and the Xihanshui Group, previously. They outcropped along the southern margins of the Liziyuan Group. The Dacaotan Group, the Upper Devonian, is close to the island arc complex, and composed of a suite of red and gray-green thick and coarse terrestrial elastics. The Shujiaba Group, the Mid-Upper Devonian, is located in the middle of the basin, is mainly fine-grained elastics with a few intercalations of limestone. The Xihanshui Group, which distributes in the southern of the basin, is mainly slates, phyllites and sandstones with carbonatite and reef blocks. The Tieshan Group, the Upper Devonian, just outcrops in the southwest of the basin, is carbonatite and clastic rocks, and deposited in the shallow -sea environment. The faults in the basin are mainly NW trend. The sedimentary characteristics, slump folds, biological assemblages in both sides of and within those faults demonstrate that they were syn-sedimentary faults with multi-period activities. They separated the forearc basin into several sub-basins, which imbricate in the background of a forearc basin with sedimentary characteristics of the piggyback basin. The deep hydrothermal fluid erupted along the syn-sedimentary faults, supported nutrition and energy for the reef, and resulted in hydrothermal-sedimentary rocks, reef and lead-zinc deposits along these faults. The sedimentary facies in the basin varies from the continental slope alluvial fan, to shallow-sea reef facies, and then to deep-water from north to south, which implies that there was a continental slope in the Devonian in the west Qinling. The strata overlap to north and to east respectively. Additionally, the coeval sedimentary facies in north and south are significantly different. The elastics become more and more coarser to north in the basin as well as upward coarsing. These features indicate prograding fillings followed by overlaps of the different fans underwater. The paleocurrent analyses show that the forearc basin is composed of thrust-ramp-basins and deep-water basins. The provenance of the fillings in the basin is the island arc in the north. The lead-zinc deposits were synchronous with the Xihanshui Group in the early stage of development of the forearc basin. They were strongly constrained by syn-sedimentary faults and then modified by the hydrothermal fluids. The gold deposits distributed in the north of the basin resulted from the tectonic activities and magmatism in the later stage of the basin evolution, and occurred at the top of the lead-zinc deposits spatially. The scales of lead-zinc deposits in the south of the basin are larger than that of the gold-deposits. The Pb-Zn deposits in the west of the basin are larger than those in the east, while the Gold deposits in the west of the basin are smaller than those in the east. Mineralizing ages of these deposits become younger and younger to west.

Antenna development for wearable wireless sensing systems

Embedded wireless sensor network (WSN) systems have been developed and used in a wide variety of applications such as local automatic environmental monitoring; medical applications analysing aspects of fitness and health energy metering and management in the built environment as well as traffic pattern analysis and control applications. While the purpose and functions of embedded wireless sensor networks have a myriad of applications and possibilities in the future, a particular implementation of these ambient sensors is in the area of wearable electronics incorporated into body area networks and everyday garments. Some of these systems will incorporate inertial sensing devices and other physical and physiological sensors with a particular focus on the application areas of athlete performance monitoring and e-health. Some of the important physical requirements for wearable antennas are that they are light-weight, small and robust and should also use materials that are compatible with a standard manufacturing process such as flexible polyimide or fr4 material where low cost consumer market oriented products are being produced. The substrate material is required to be low loss and flexible and often necessitates the use of thin dielectric and metallization layers. This paper describes the development of such a wearable, flexible antenna system for ISM band wearable wireless sensor networks. The material selected for the development of the wearable system in question is DE104i characterized by a dielectric constant of 3.8 and a loss tangent of 0.02. The antenna feed line is a 50 Ohm microstrip topology suitable for use with standard, high-performance and low-cost SMA-type RF connector technologies, widely used for these types of applications. The desired centre frequency is aimed at the 2.4GHz ISM band to be compatible with IEEE 802.15.4 Zigbee communication protocols and the Bluetooth standard which operate in this band.

Modelling the Performance of Flexible Substrates for Lead-Free Applications

In this paper, the performance of flexible substrates for lead-free applications was studied using finite element method (FEM). Firstly, the thermal induced stress in the flex substrate during the lead free solder reflow process was predicted. The shear stress at the interface between the copper track and flex was plotted. This shear stress increases with the thickness of the copper track. Secondly, an ACF flip chip was taken as a typical lead-free application of the flex substrate. The reflow effect on the reliability of ACF interconnections was analyzed. Higher stress was identified along the interface between the conductive particle and the metallization, and the interfacial stress increases with the reflow peak temperature and the coefficient of thermal expansion (CTE) of the adhesive. The moisture effect on the reliability of ACF joints were studied using a macro-micro modeling technique, the predominantly tensile stress found at the interface between the conductive particle and metallization could reduce the contact area and even cause the electrical failure. Modeling results are consistent with the findings in the experimental work